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ISL80505IRAJZ Intersil Corporation High Performance 500mA LDO; DFN8; Temp Range: -40° to 125°C visit Intersil
ISL80505IRAJZ-T Intersil Corporation High Performance 500mA LDO; DFN8; Temp Range: -40° to 125°C visit Intersil
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transistor br 8050

Catalog Datasheet MFG & Type PDF Document Tags

BR 8050 D

Abstract: transistor br 8050 HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor HN 8550 is , . Please refer to the "TO-92 TRANSISTOR PACKAGE OUTLINE" on page 80 for the available pin options. IX , owned subsidiary of HQNEV TECHNOLOGY LTD. ) HN 8050 Characteristics at Tamb = 25 °C Symbol Min. Typ
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transistor br 8050

Abstract: BR 8050 D 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As complementary type the PNP transistor ST 8550 , 8050 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8050B hFE 70 , VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V V(BR)CEO 25 - - V V
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transistor br 8050 BR 8050 D BR 8050 NPN transistor 8050 transistor b 8050 1/STK 8050 ic 8050C 8050D 8050E

st 8050d

Abstract: st8050c ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , transistor ST 8550 is recommended. On special request, these transistors can be manufactured in different , ST 8050 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8050B hFE , nA VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V V(BR)CEO 25 - -
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st 8050d st8050c st8050d st 8050C 8050c transistor 8050 TRANSISTOR PNP

st 8050d

Abstract: 8050 TRANSISTOR PNP ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , transistor ST 8550 is recommended. On special request, these transistors can be manufactured in different , ) Dated : 01/09/2003 ST 8050 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , - - 100 nA VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V V(BR)CEO
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8050 pnp transistor NPN transistor 8050d st 8050 8050 transistor TRANSISTOR c 8050 8550 NPN Transistor

st 8050d

Abstract: st8050c ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , transistor ST 8550 is recommended. On special request, these transistors can be manufactured in different , : 01/09/2003 ST 8050 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST , - 100 nA VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V V(BR)CEO 25
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transistor 8050d BR 8550 BR 8550 D

st 8050d

Abstract: NPN transistor 8050d ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , transistor ST 8550 is recommended. On special request, these transistors can be manufactured in different , 8050 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8050B hFE 70 , VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V V(BR)CEO 25 - - V V
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c 8050 transistor D 8050 he 8050d br 8550 c

NPN transistor 8050d

Abstract: transistor br 8050d 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , 8050 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 170 , VBE(sat) - 0.98 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V
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transistor br 8050d NPN transistor 8050C

NPN transistor 8050d

Abstract: 8050c transistor ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 8050 (1.5A , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - -
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br 8550 NPN Transistor transistor 8050c 8550 pnp transistor 8050d transistor

BR 8050 D

Abstract: NPN transistor 8050d ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 05/01/2005 ST 8050 (2A) Characteristics , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - -
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transistor 8550 BR 8050D BR 8550 ic 8050-C

NPN transistor 8050d

Abstract: BR 8050 D ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , ST 8050 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 , V VBE(sat) - 0.98 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - -
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S 8050 transistor transistor S 8050 transistor st

NPN transistor 8050d

Abstract: BR 8050 D ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/01/2005 ST 8050 (2A , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - -
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hFE 8050 ST8050 transistor 8050 d

NPN transistor 8050d

Abstract: BR 8050 D ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , ST 8050 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 , V VBE(sat) - 0.98 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - -
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BR 8050c

NPN transistor 8050d

Abstract: BR 8050 D ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8050 (1.5A) Characteristics , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - -
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8050 NPN transistor ic 8050

transistor br 8050

Abstract: NPN transistor 8050d ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications , Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage at IC = 2 mA V(BR)CEO 25 - - V Emitter Base Breakdown Voltage at IE = 100 µA V(BR)EBO 6 - - V Collector Emitter Saturation Voltage at IC = 800 mA, IB = , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/03/2007 ST 8050 (1.5A
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npn 8050 8050-d

8550D transistor

Abstract: BR 8550D ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , 0.5 V -VBE(sat) - 0.98 1.2 V -V(BR)CEO 25 - - V -V(BR)CBO 40
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8550D 8550D transistor BR 8550D st 8550d 8550c s 8550 transistors 8550C

BR 8550D

Abstract: 8550D transistor ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , 0.5 V -VBE(sat) - 0.98 1.2 V -V(BR)CEO 25 - - V -V(BR)CBO 40
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transistor 8550D br 8550c NPN Transistor transistor 8550D PNP NPN transistor 8550d PNP transistor 8550d BR 8550C

8550D

Abstract: BR 8550 D ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , 0.98 1.2 V -V(BR)CEO 25 - - V -V(BR)CBO 40 - - V -V(BR)EBO 6
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8550 pnp he 8550d PNP 8550 8550 NPN 8550

BR 8550D

Abstract: 8550C ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , 0.98 1.2 V -V(BR)CEO 25 - - V -V(BR)CBO 40 - - V -V(BR)EBO 6
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BR 8550 transistor br 8550 NPN ST 8550 br 8550d NPN Transistor

8550c

Abstract: BR 8550D ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , ) - 0.98 1.2 V -V(BR)CEO 25 - - V -V(BR)CBO 40 - - V -V(BR
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8550D transistor

Abstract: 8550C ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin , ) - 0.98 1.2 V -V(BR)CEO 25 - - V -V(BR)CBO 40 - - V -V(BR
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