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LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor bc557

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transistor bc557

Abstract: H557 PNP SILICON TRANSISTOR BC557 H557 Ta=25 TO-92 T stg -. -55~150 P C -.500mW 1C 2 B 3E V CBO -.-50V V CEO -.-45V V E B O -.-5V I C -.-100mA Ta=25 BVCBO BVCEO BVEBO ICBO HFE VCE(sat1) VCE(sat2) - -50
Shantou Huashan Electronic Devices
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transistor bc557 H557 500mW 5v transistor

SOD87 footprint diode 1n4148

Abstract: triac diac applications circuit diagram -1000B (8 A, 1000 V) Microcontroller: 87LPC764 Transistor: BC557 Diode: 1N4148 Suitable Products · , quadrant triac (IGT = 50mA) 56 +5 V LPC MICROCONTROLLER BZX79C5V6 mains supply BC557 insensitive Hi-Com triacs (IGT = 50 mA) 56 BC557 motor run capacitor 1N4148 0V 100 nF (63 , for optimal matching to transistor · SOD64 package available with kinked leads for easy mounting · , , BYV96 BYW95, BYW96 Examples of transistor/diode combinations are: - 2SC3795/BYV95C - BUJ403BX/BYV96E
Philips Semiconductors
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BYX119G SOD87 footprint diode 1n4148 triac diac applications circuit diagram AC ENERGY SAVING CIRCUIT DIAGRAM ac motor speed control circuit diagram with IGBT solar inverters circuit diagram car ignition circuit diagram BYX120G BYX13 MSE334 MSE331

Zener Diode 3v 400mW

Abstract: transistor bc548b RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor, Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor
Philips Semiconductors
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Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF

BC557

Abstract: bc558 BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 TO , Continuous VECO V CBO VEBO lC BC556 -65 -80 -5 BC557 -45 -50 -5 100 Unit Vdc Vdc Vdc , Dissipation Alumina Substrate, TA = 25 C BC556 BC557 BC558 Unit PD 625 mW/ C -55 to +150 C BC556 BC557 BC558 Junction and Storage, Temperature Max TJ, Tstg , Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (lC = 2 mAdc. lB =0) BC556 BC557
Weitron
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BC557 TRANSISTOR BC558 PNP transistor CBC556 Transistor Bc556 TRANSISTOR BC558 BC557 PNP TRANSISTOR BC556A/BC557A/BC558A BC556B/BC557B/BC558B BC557C/BC558C 100MH 270TYP

BC558B

Abstract: bc560 BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features â'¢ â'¢ â'¢ â , Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 www.fairchildsemi.com 1 BC556 / BC557 / BC558 / BC559 / BC560 â'" PNP Epitaxial Silicon Transistor April 2014 Stresses exceeding , www.fairchildsemi.com 2 BC556 / BC557 / BC558 / BC559 / BC560 â'" PNP Epitaxial Silicon Transistor Absolute , '" PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC556 / BC557 / BC558
Fairchild Semiconductor
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BC558B BC546 BC547 BC548 BC549 BC550 BC556ABU

BC557

Abstract: BC558C current (max. 100 mA) · Low voltage (max. 65 V). BC556; BC557; BC558 PINNING PIN 1 2 3 emitter base , transistor in a TO-92; SOT54 plastic package. NPN complements: BC546, BC547 and BC548. QUICK REFERENCE DATA SYMBOL V CBO PARAMETER collector-base voltage BC556 BC557 BC558 collector-emitter voltage BC556 BC557 BC558 peak collector current total power dissipation DC current gain BC556 BC557; BC558 Tamb , LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). BC556; BC557; BC558
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OCR Scan
BC558C BC557C BC558 NPN Transistor BC557 semiconductors npn bc557 transistor bc558 features PNP Transistor BC557

Transistor NPN BC556

Abstract: BC557 SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , H VCBO -50 BC558 Collector-Emitter Voltage -30 BC556 -65 BC557 VCEO -45 BC558 Voltage BC557 VEBO -5 3 2. BASE V 3. EMITTER TO-92 V -5 BC556 -100 BC557 IC -100 BC558 mA -100 BC556 Emitter Current 2 1. COLLECTOR -5 BC558 Collector Current 1 -30 BC556 Emitter-Base F V C Voltage BC557 F L
KEC
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Transistor NPN BC556 BC557 SWITCHING TRANSISTOR of transistor bc558 BC557 SWITCHING APPLICATION TRANSISTOR BC557 application note BC557 TRANSISTOR application BC546/547/548

operation of BC557 TRANSISTOR

Abstract: TRANSISTOR C 557 B UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , /557/558 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified , stress ratings only and functional device operation is not implied. BC556 BC557 BC558 BC556 BC557 , ) PARAMETER SYMBOL BC556 Collector-Emitter Breakdown Voltage BC557 BC558 BC556 Collector-Base Breakdown Voltage BC557 BC558 Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain
Unisonic Technologies
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operation of BC557 TRANSISTOR TRANSISTOR C 557 B transistor c 557 transistor 557 b free BC557 B 557 PNP TRANSISTOR BC556- BC557- BC558- BC556L-

BC557

Abstract: transistor marking bc557 . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power , Transistor Contents ·Features ·Applications ·Product status/pricing/packaging ·Order Samples Features z z z BC557 Related Links Request samples How to order products ·Qualification Support Datasheet Download
Fairchild Semiconductor
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BC557BTF transistor marking bc557 information of BC557 BC556/557/558/559/560 BC557/560 BC559/560 15000MH BC557BU BC557TA

BC557

Abstract: transistor BC557 base collector emitter CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC556/BC557/BC558 TRANSISTOR (PNP) TO-92 FEATURES High Voltage Complement to BC546 , Symbol Parameter Collector-Base Voltage VCBO VCEO VEBO Value BC556 BC557 BC558 , Collector-emitter breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter-base breakdown voltage , BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A BC556B
HAROM
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transistor BC557 base collector emitter bc558 transistor transistor BC558 base collector emitter bc556 transistor bc557 to92 PNP BC558 BC556/BC557/BC558 BC546/BC547/BC548

BC557

Abstract: BC556 BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 * "G" , Collector Current Continuous VECO V CBO VEBO lC BC556 -65 -80 -5 BC557 -45 -50 -5 100 , Total Device Dissipation Alumina Substrate, TA = 25â"ƒ C BC556 BC557 BC558 Unit PD 625 mW/ â"ƒ C -55 to +150 â"ƒ C BC556 BC557 BC558 Junction and Storage, Temperature , . lB =0) BC556 BC557 BC558 Collector-Base Breakdown Voltage (lC = 100 mAdc. lE =0) BC556
Weitron
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transistor BC557 base collector emitter

Abstract: BC557 SWITCHING TRANSISTOR SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , . N E K G J D ) SYMBOL BC556 Voltage BC557 VCBO -50 BC557 -45 BC558 Voltage 3 2. BASE V 3. EMITTER BC557 VEBO TO-92 -5 V -5 BC556 -100 BC557 IC -100 BC558 mA -100 BC556 Emitter Current 2 1. COLLECTOR -5 , 100 BC557 IE BC558 100 mA 100 Collector Power Dissipation PC 625
KEC
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of pnp transistor BC557 of bc557 transistor equivalent A BC557

Transistors

Abstract: BC5473 DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general , Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547 , leaded (through hole) package; 3 leads SOT54 BC557 LIMITING VALUES In accordance with the , V BC557 VCEO - BC557 - -45 V - -5 V collector-emitter voltage
NXP Semiconductors
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SC-43A Transistors BC5473 BC547 NXP BC547 sot54 BC546 nxp BC557 pin description MAM281 R75/04/

cbc550c

Abstract: hFE 8 BC558B 331 TRANSISTOR 0.6 - 900 dB NF1 NF2 2.5 10 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model , * COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , ) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 V(BR)CEO V -65 -45 -30 -80
ON Semiconductor
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cbc550c hFE 8 BC558B 331 TRANSISTOR BC550C TRANSISTOR bc550c BC550C BC550C/D BC556BZL1 BC557AZL1 BC557B BC557BRL1

Bc558

Abstract: BC557 SWITCHING APPLICATION TRANSISTOR SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , H VCBO -50 BC558 Collector-Emitter Voltage -30 BC556 -65 BC557 VCEO -45 BC558 Voltage BC557 VEBO -5 3 2. BASE V 3. EMITTER TO-92 V -5 BC556 -100 BC557 IC -100 BC558 mA -100 BC556 Emitter Current 2 1. COLLECTOR -5 BC558 Collector Current 1 -30 BC556 Emitter-Base F V C Voltage BC557 F L
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BC557

Abstract: transistor BC557 base collector emitter /BC557/BC558 TRANSISTOR (PNP) TO-92 FEATURES High Voltage Complement to BC546/BC547/BC548 1 , Collector-Base Voltage VCBO VCEO VEBO Value BC556 BC557 BC558 Collector-Emitter Voltage -80 , breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A BC556B/BC557B/BC558B
Jiangsu Changjiang Electronics Technology
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BC548 or BC558B TRANSISTOR BC557 bc556 Bc547 TRANSISTOR

BC557

Abstract: bc556 TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE â'¢ For Complementary With NPN Type , BC556 VcBO -80 V BC557 -50 BC558 -30 Collector-Emitter Voltage BC556 VcEO -65 V BC557 -45 BC558 -30 Emitter-Base Voltage BC556 Vebo -5 V BC557 -5 BC558 -5 Collector Current BC556 Ic -100 mA BC557 -100 BC558 -100 Emitter Current BC556 Ie 100 mA BC557 100 BC558 100 , (Note) BC557 hfe Vce=-5V, Ic=-2mA 110 - 800 BC558 110 - 800 Collector-Emitter Saturation Voltage
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OCR Scan
NPN transistor bc558 C556/7/8

BC557

Abstract: BC558 BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b , Current Continuous Symbol VECO VCBO VEBO lC BC556 -65 -80 -5 BC557 -45 -50 -5 100 , Total Device Dissipation Alumina Substrate,TA=25°C BC556 BC557 BC558 Unit PD 625 mW/°C BC556 BC557 BC558 Junction and Storage, Temperature Max TJ, Tstg -55 to +150 °C , Collector-Emitter Breakdown Voltage (lC=2mA, lB=0) BC556 BC557 BC558 V(BR)CEO -65 -45 -30
Weitron
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BC558A BC556A

BC557 application note

Abstract: BC557 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general , Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING , handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547 , leaded (through hole) package; 3 leads SOT54 BC557 LIMITING VALUES In accordance with the , V BC557 VCEO - BC557 - -45 V - -5 V collector-emitter voltage
Philips Semiconductors
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philips BC557B Bc557 data bc556 philips pnp bc547 transistor BC557B PHILIPS APPLICATION OF BC557 npn transistor SCA76

BC557

Abstract: BC558 BC556B/57ABC/58B BC556, B BC557, A, B, C BC558, B TRANSISTOR (PNP) TO-92 FEATURES , BC556 -80 V VCBO: BC557 -50 V BC558 -30 V Operating and storage junction temperature range TJ , =0 BC556 BC557 V VCB= -25V, IE=0 BC558 Collector cut-off current -45 VCB=- 70 V, IE=0 BC556 BC557 V -30 BC558 Emitter-base breakdown voltage -50 -65 BC556 BC557 UNIT -30 BC558 Collector-emitter breakdown voltage MAX -80 BC556 BC557 MIN BC556 BC557
WEJ Electronic
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BC557 data sheet transistor BC556b BC557 equivalent bc556 equivalent
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