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transistor bc549c

Catalog Datasheet MFG & Type PDF Document Tags

Zener Diode 3v 400mW

Abstract: transistor bc548b RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor, Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor
Philips Semiconductors
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Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF

BC550C

Abstract: BC549C transistor BC549C, BC550C Low Noise Transistors NPN Silicon Features · These are Pb-Free Devices , Value VCEO BC549C BC550C Collector -Base Voltage Vdc 30 45 VCBO BC549C BC550C , -92 (Pb-Free) 5000 Units / Bulk Publication Order Number: BC550C/D BC549C, BC550C ELECTRICAL , . Pulse test = 300 ms - Duty cycle = 2%. RS - in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC549C, BC550C 1.0 VCE = 10 V TA = 25°C 1.5 0.9 1.0
ON Semiconductor
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BC549C transistor transistor bc549c BC550C TRANSISTOR pin out of bc549c BC550CG BC549CG

bc550c

Abstract: V. 2. Pulse test = 300 ms â' Duty cycle = 2%. RS â' in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC549C, BC550C 1.0 VCE = 10 V TA = 25 , BC549C, BC550C Low Noise Transistors NPN Silicon Features http://onsemi.com â'¢ These are , Value VCEO BC549C BC550C Collector â'Base Voltage Vdc 30 45 VCBO BC549C BC550C , BC549C, BC550C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ
ON Semiconductor
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BC550

Abstract: BC550C TRANSISTOR NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. QUICK REFERENCE , mW C C °C °C -6 5 -6 5 T, Tam b Note 1. Transistor mounted on an FR4 printed-circuit board , CONDITIONS note 1 VALUE 250 UNIT K/W Note 1. Transistor mounted on an FR4 printed-circuit board , PARAMETER collector cut-off current emitter cut-off current DC current gain BC549B; BC550B BC549C; BC550C DC current gain BC549; BC550 BC549B; BC550B BC549C; BC550C CONDITIONS lE = 0; VCB = 30 V lE = 0
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BC549 NPN transistor bc550 PIN NPN Transistor BC549B philips BC549B TRANSISTOR BC550B BC550 philips

BC549C transistor

Abstract: bc550c BC549C, BC550C Low Noise Transistors NPN Silicon Features · Pb-Free Packages are Available , location) ORDERING INFORMATION Device BC549C BC549CG BC550C *For additional information on our , Order Number: BC550C/D BC549C, BC550C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , %. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 - BC549C, BC550C 1.0 VCE = 10 V TA = 25°C 1.5 0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10
ON Semiconductor
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transistor yc 520 BC550/D

bc549c

Abstract: BC550B,C ) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C v CE(sat) - - - v BE(sat) _ 0.075 0.3 0.25 1.1 , - - MHz CC bo ^fe BC549B/BC550B BC549C/BC550C 2.5 pF 240 450 330 600 500 900 , cycle = 2%. Figure 1. Transistor Noise Model Motorola Small-Signal Transistors, FETs and Diodes
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BCS49 BC550B,C BC549BC BC549B,C BC549C/BC550C
Abstract: CHARACTERISTICS DC Current Gain Oc = 1o nAdc, - _ hFE Vc e = 5 0 Vdc) BC549B/550B BC549C/550C BC549B/550B BC549C/550C (IC = 2.0 mAdc, V c e = 5.0 Vdc) Collector-Emitter Saturation Voltage (iC = , kHz) CCbo PF â'" hfe BC549B/BC550B BC549C/BC550C Noise Figure (Ic = 200 nAdc, VCE = , %. Figure 1. Transistor Noise Model -â  fc. 3b?2SS ODTSÃTG -
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BC549B

Abstract: BC550B ) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C (IC = 2.0 mAdc, VCE = 5.0 Vdc , 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 , - in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2
ON Semiconductor
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226AA BC549B/D
Abstract: ON CHARACTERISTICS hFE DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) BC549B/550B BC549C/550C BC549B/550B BC549C/550C (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collectorâ'"Emitter Saturation , kHz) hfe BC549B/BC550B BC549C/BC550C Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kâ , %. RS â'" in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 ON Semiconductor
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BC549B

Abstract: transistor BC 549 c e - 5 Vdc) (Iq = 2 mAdc, V qj : = 5 Vdc) h FE BC549B/550B BC549C/550C BC549B/550B BC549C/550C v CE , /BC550B BC549C/BC550C NF-] nf2 Symbol hfe Min 240 450 - Typ 330 600 0.6 - Max 500 900 , ) (lC = 200 /xAde, V c e = 5.0 Vdc, Rs = 100 k iî, f = 1.0 kHz) FIGURE 1 - TRANSISTOR NOISE M ODEL
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transistor BC 549 TRANSISTOR BC 550 b

BC549B

Abstract: BC550B CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector ­ Emitter Saturation Voltage (IC = 10 mAdc, IB , ) Small­Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C , 1.0 V. 2. Pulse test = 300 µs ­ Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small­Signal Transistors, FETs and Diodes Device Data BC549B,C
Motorola
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BC550 MOTOROLA

BC549B

Abstract: BC550 MOTOROLA CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector ­ Emitter Saturation Voltage (IC = 10 mAdc, IB , ) Small­Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C , 1.0 V. 2. Pulse test = 300 µs ­ Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small­Signal Transistors, FETs and Diodes Device Data BC549B,C
Motorola
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BC549B motorola

BC649

Abstract: BC550 MOTOROLA CHARACTERISTICS DC Current Gain (IC = 10 uAdc, Vce = 5 Vdc) BC549B/550B BC549C/550C (lc = 2 mAdc, Vce = 5 Vdc) BC549A/550A BC549B/550B BC549C/550C BC549/550 hFE 100 100 110 200 420 110 150 270 290 500 220 450 800 800 , = 6.0 Vdc, Rs = 100 kil, f = 1.0 kHz) NF2 - â'" 10 FIGURE 1 - TRANSISTOR NOISE MODEL FIGURE 2 â
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VQE-10 BC649 bc649c bc550 noise figure ic 2113 bc550 transistor BC549C/550C

BC560 philips

Abstract: BC550 handbook, halfpage NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560 , INFORMATION PACKAGE TYPE NUMBER NAME BC549C SC-43A DESCRIPTION VERSION plastic single-ended , ; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Oct 11 2 Philips , VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board , 10-1 1 10 BC549C; BC550C. Fig.2 DC current gain; typical values. 2004 Oct 11 4 102
Philips Semiconductors
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BC560 philips bc550 bc560 BC549 philips semiconductors BC549 DATASHEET BC549 NPN transistor download datasheet of philips M3D186 MAM182 SCA76 R75/04/

BC550 Philips

Abstract: BC550 stages in audio frequency equipment. DESCRIPTION 1 handbook, halfpage NPN transistor in a TO , -65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL , 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Jun 20 3 VALUE , µA; VCE = 5 V; see Figs 2 and 3 - 150 - - 270 - BC549C; BC550C hFE DC , 450 BC549C; BC550C 420 520 800 BC549; BC550 VBE base-emitter saturation voltage
Philips Semiconductors
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transistor bc549 BC550 equivalent bc550c w 49 bc549 equivalent BC560 pnp datasheet str 450 a SCA54

bc549

Abstract: Transistor NPN BC 549B . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents , Line 3: -&3 BC549C Full Production $0.0473 TO-92 3 BULK BC549CBU Full , BC549B BC549BBU BC549BTA BC549BTAR BC549BTF BC549BTFR BC549BU BC549C BC549CBU BC549CTA BC549CTF BC549CTFR
Fairchild Semiconductor
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Transistor NPN BC 549B transistor c 548 c Transistor Bc547 npn transistor BC 548 Data Amplifier with transistor BC549 bc548 fairchild BC546/547/548/549/550 BC546 BC556 BC547/550 BC548/549 BC546/547

BC560 nxp

Abstract: BC549 handbook, halfpage NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560 , INFORMATION PACKAGE TYPE NUMBER NAME BC549C SC-43A DESCRIPTION VERSION plastic single-ended , Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Oct 11 2 , VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board , BC549C; BC550C. Fig.2 DC current gain; typical values. 2004 Oct 11 4 102 IC (mA) 103
NXP Semiconductors
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BC560 nxp bc550 original BC549 TRANSISTOR TRANSISTOR bc560 bc560 original

BC546A

Abstract: BC547A NPN Transistor Preliminary Small Signal Diode DO-92 A B G E F Features Epitaxial planar die construction Surface device type , A1/A1G BC549B A1/A1G BC549C A1/A1G BC550A A1/A1G BC550B A1/A1G BC550C A1/A1G Packing 4k/ box 4k/ box , ,BC549-A/B/C,BC550-A/B/C NPN Transistor Preliminary Small Signal Diode Rating and Characteristic Curves Version:A12 # NPN Transistor Preliminary
Taiwan Semiconductor
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BC546A BC547A BC548A BC549A CBC546A BC547C A1 NPN transistor to-92 BC546-A/B/C BC547-A/B/C BC548-A/B/C MIL-STD-202 BC546B

BC549

Abstract: BC550 handbook, halfpage NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560 , °C open collector Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit , resistance from junction to ambient VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted , V; see Fig.2 BC549C; BC550C - 200 600 mV base-emitter saturation voltage IC = , , full pagewidth VCE = 5 V hFE 400 200 0 10-2 10-1 1 10 BC549C; BC550C. Fig
Philips Semiconductors
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transistor BC559 SCA63

NPN Transistor BC548B

Abstract: BC548 ALLEGRO MICROSYSTEMS INC 14 D 0504330 00047^4 3 ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB BC237A BC237B BC238A BC238B BC238C , -25 BC338-40 BC546A BC546B BC547A BC547B BC547C BC548A BC548B BC548C BC549B BC549C BC550A BC550B BC550C , MICROSYSTEMS INC 14 J > 0SD433Û 0Da47c JS S ALGR SPRAGUE PROELECTRON T092 TRANSISTOR
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NPN Transistor BC548B BC548 bc337-40 npn transistor BC238B npn BC239B BC239C BC257A BC257B BC258A BC258B
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