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Part Manufacturer Description Datasheet BUY
2SA1873-Y(TE85L,F) Toshiba America Electronic Components TRANSISTOR,BJT,ARRAY,COMM EMITTER,PNP,50V V(BR)CEO,150MA I(C),TSOP visit Digikey
CDB4245 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz CODEC w/PGA & Input Mux visit Digikey
CS42L73-CRZR Cirrus Logic Consumer Circuit, PBGA65, 5 X 5 MM, FBGA-65 visit Digikey
CS42L73-CRZ Cirrus Logic Consumer Circuit, PBGA65, 5 X 5 MM, FBGA-65 visit Digikey
EP9307-CRZ Cirrus Logic RISC Microprocessor, 32-Bit, 200MHz, CMOS, PBGA272, LEAD FREE, MO-151BAL-2, TFBGA-272 visit Digikey
EP9312-IBZ Cirrus Logic RISC Microprocessor, 32-Bit, 184MHz, CMOS, PBGA352, 27 X 27 MM, LEAD FREE, PLASTIC, BGA-352 visit Digikey

transistor array pnp

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: =35V AP/AF=50V BP-I = 80 V I.5A X 4 4-channel NPN transistor array (for unipolar m otor) 600 TD62308AP B P -1 F . A F DIP 16 /P F P 16 4-channel NPN Darlington transistor array, PNP transistor , 4 28V 0.4A 4-channel NPN transistor array, PNP transistor input (for unipolar m otor) 610 , 16 P/F=35V AP=50V BP-I = 80 V 1.5A X 4 50V 0.5A X 8 4-channel NPN Darlington transistor array (fo r unipolar m otor) 585 TD62083AP DIP 18 8-channel NPN Darlington transistor array (fo -
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TA8425H TA7363AP opr12 opr 12 Mosfet J49 9mfp 8212F TC9142P SQP20P-300 TC9192P/F TC9203P/F TC5081AP TA7715P
Abstract: similar NPN and PNP transistor characteristics at high speeds. Typical Peak fr values of 250 MHz for the , Semicustom Linear Array Transistor Data ALA401 (Ta-25°q Transistor Name* NR111A21 NR131A21 NR38XS , Data Sheet May 1996 ALA401/402 Semicustom Linear Array Transistor Data ALA402 (Ta Transistor , Semicustom Linear Array Component Totals ALA402 Component Transistor NR111A21 NR131A21 NR38XS , 10, B â  11, C » 12, eta Examples: PR352A21 â'" A PNP transistor in the CBIC-R technology with -
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702 TRANSISTOR npn transistor+1906 PR352A2 NR151A01 NR151
Abstract: Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES APPLICATIONS â'¢ 4 , The THAT 300, 320 and 340 are large geometry, 4-transistor, monolithic NPN and/or PNP arrays. They , THAT 340 1 13 2 4 THAT 320 14 1 THAT 300 Series Transistor Array ICs 8 , Series Transistor Array ICs Page 3 of 8 Document 600041 Rev 04 SPECIFICATIONS 1 (Contâ'™d) NPN , Corporation. All rights reserved. Document 600041 Rev 04 Page 4 of 8 THAT 300 Series Transistor Array THAT
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8 npn transistor ic 14pin
Abstract: cc Quad Transistor Array Dual Complementary Pair Dual Complementary Pair B E E B 2N2222A NPN TMPT2222A TP2222A TPQ2222A c* c Quad Transistor Array Quad Transistor Array B E E B 2N2369 2N2907 PNP TPQ2369 TMPT2907 TP2907 TPQ2907 TPQ6002 TPQ6502 cc Quad Transistor Array Dual , 2N3906 PNP 2N3906 TMPT3906 TPQ3906 TPQ6700 B c C` Quad Transistor Array Quad Transistor , * K K K K Quad Transistor Array MPSA56 PNP MPSA56 TMPTA56 TPQA56 Quad Transistor Array -
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226AA bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566
Abstract: adjacent PNP transistor is within 1.2 mV. 12-27 LINEAR ARRAY ALA400/401 Resistor Data (ALA400 , LINEAR ARRAY Common-Emitter Current Gain (NPN) le (A) Common-Emitter Current Gain (PNP) le (A , Saturation Characteristic (PNP) le (mA) 12-33 LINEAR ARRAY ALA400/401 Current-Voltage , ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using , NPN and vertical PNP transistors. CBIC technology offers the advantage of designing high-performance -
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Abstract: Diode Dual Diode Zener Zener Zener Zener NPN NPN NPN NPN PNP Diode T ransistor Transistor Zener Array T , 8-30 8-30 8-5 8-4 8-30 8-30 8-11 8-10 8-30 8-4 8-4 8-4 8-5 8-30 8-10 8-11 8-30 Quad Transistor Array Dual Complementary Pair E C B E B C Quad Transistor Array Dual Complementary Pair B E E E E B E B E C B C Quad Transistor Array C C B B 2N3416 2N3417 2N3904 NPN NPN NPN B C E C Quad Transistor Array B C E C Quad Transistor Array DISCRETE S MXDEX A \ D C s. TM ,;u . I Ì Industry -
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A2 zener diode diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 ZENER 1N5242 1N5230 1N5231 1N5232 1N5234 1N5236 1N5237
Abstract: Linear Array is an Integrated circuit consisting of vertical NPN and PNP transistors, programmable , advantages of simBar NPN and PNP transistor characteristics at very high speeds. Peak fr values of 10.2 GHz , Array also has eight unique epi areas containing both resistors and PNP transistors to allow for , Array Preliminary Data Sheet May 1996 Transistor Name Coding Scheme â'" CBIC-V N V 2 3 1 A 0 1 , alpha charactara, auch a» A - 10, B - 11, C - 12, ato. Examples: PV432AG1 â'" A PNP transistor in the -
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ALA110 NV231A01 cbic-v pv-231 AO1011 ax pm hf ne PV231A01 PV432A NV663A01 NV663A
Abstract: Standard NPN fT = 550 MHz typ. Wide variety of NPN and PNP transistor types on each array Base , Into the same base for higher current handling capability. QP9 is a standard substrate PNP transistor , Kit Part # KP01 KP02 KP06 5 standard NPN transistor array (QN1) 4 standard lateral PNPs (QP6) 1 , low noise NPNs (QN3) 1 wide band differential amplifier circuit 5 high frequency NPN transistor array , SEMICONDUCTORS linear component arrays are semicustom bipolar integra ted circuits that contain an array o f -
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4221 transistor AC 128 pnp transistor qp-8 T-42-21
Abstract: Linear Array Features â  High-speed CBIC process 4.5 GHz NPN, 3.75 GHz PNP â  High BVcex (12 V , similar NPN and PNP transistor characteristics at very high speeds. Peak fr values of 4.5 GHz for the , capability (8 mA for the NPN and PNP 231A01 6X transistors) are unique to this linear array. Two levels of , Semicustom Linear Array Transistor Data Transistor Name* NU231A01 NU431A01 NU362A02 NU663A02 , ) IC (A ) 11 ALA210 UHF Semicustom Linear Array Transistor Name Coding Scheme â'" CBIC-U N -
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TRANSISTOR 1382 NU663A 52AL040420 D-8043 DS91-028LBC DS90-001LBC
Abstract: UHF Sem ¡custom Linear Array Features â  High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP . , ) process that offers the advantages of similar NPN and PNP transistor characteristics at very high speeds , May 1996 ALA210 UHF Semicustom Linear Array Transistor Data (Ta = 25*0 Current Range (mA , 32.0 30.0* PU693A02 PNP 12 1 108X 0.18 41.0 11.0 65.0 60.0$ * An explanation of the transistor name , Array Data Sheet June 1996 Transistor Name Coding Scheme â'" CBIC-U N U 2 3 1 A 0 1 TTTTTTT -
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DS96-150BPF CBIC-U PU392A02 PU432A01 pnp 8 transistor array npn 8 transistor array 30Q-050BA DS92-120LBC
Abstract: transistor. This device is called a lateral PNP because the emitter current flows sideways from the P emitter , NPN Cell Transistor (2x) B All array cells and some peripheral components use double base/double , Copyrighted By Its Respective Manufacturer Emitter Pinch Resistor/Small NPN Transistor E Each array cell , connection is the normal collector contact. _ Lateral PNP Transistors F All array cells and peripheral areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact -
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op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 me 4946 492KQ 69X81 89X81 1080K 602858F PS2314
Abstract: Pada Array Cell» Total Total Transistor* Restatane* Die Size (Mila) MMA 14 2 , circuit designers Small NPN Cell Transistor (2x) B All array cells and some peripheral components , PNP Transistors F o ol All array cells and peripheral areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact, two base contacts info a single , NPN transistor or PNP transistor can be used as a circuit diode. Preferred circuit connection is to -
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Abstract: contain identical array cells which provide a combination of NPN transis­ tors, PNP transistors, a pinch , Transistor E le n d Each array cell contains a dual function structure consisting of a single base , . Lateral PNP Transistors F o o All array cells and peripheral areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact, two base contacts into a single , NPN transistor or PNP transistor can be used as a circuit diode. Preferred circuit connection is to -
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chip die npn transistor MM1007 69X56
Abstract: Channel N Channel N Channel N Channel PNP PNP NPN NPN NPN NPN S G S G* B C E C* Quad Transistor Array , MPSA43 MPSA55 NPN NPN NPN PNP E B E B IE B MPSA56 PNP B E B E Quad Transistor Array E B c , 2N2222A NPN B c Dual Complementary Pair Dual Complementary Pair B E c* E B c Quad Transistor Array B c Dual Complementary Pair Dual Complementary Pair B E c* E B c Quad Transistor Array E E E E , -226AA TO-236AB TO-226AA E B B c E C` Quad Transistor Array Dual Complementary Pair 7-15 7-18 7-38 -
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2N5245 transistor 2n3819 cross reference jFET Array TO-266AA 2N3904 731 BFR30 "cross reference" 1N5229 1N5233 1N5235 1N5238 1N5239 1N5240
Abstract: of transistors which can be put in the array. FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The , and PNP transistors with an ft of 5.5GHz. The parameter ft is a measure of the transistor's high , with an IC process, and there can be both NPN and PNP transistors on one piece of silicon. The linear array is usually packaged in a PDIP or SOIC case, but the next generation arrays will be packaged in a , - + VS + FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER The advantages of linear arrays Harris Semiconductor
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AN9744 Dual Long-Tailed Pair Transistor Array gilbert cell differential pair pnp array HFA3128 Mancini 9744 ic ISO9000 1-800-4-HARRIS
Abstract: PNP 231A01 6X transistors) are unique to this linear array. â  High BVCEX (12 V NPN, 11 V PNP) â , Sheet May 1996 ALA210 UHF Semicustom Linear Array Transìstor Data (Ta = 2 5 -c ) Transistor , , B » 11, C - 12, etc. Examples: PU432A01 â'" A PNP transistor in the CBIC-U technology with four , ALA210 UHF Semicustom Linear Array Features Description â  High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA210 UHF Semicustom Linear Arrays is an integrated circuit consisting of -
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Abstract: Devices CBO Pkg. HFA3128 Transistor Array, 2 NPN, 3 PNP, Ultra High Frequency PNP 5 15 , Device Description Noise FIG (dB) HFE CCB (pF) Pkg. CA3096 NPN/PNP Transistor Array, High Voltage, General Purpose CA3096A NPN/PNP Transistor Array, High Voltage, Enhanced Icbo , Transistor Array, High Voltage, General Purpose, Relaxed Parameters NPN/ PNP 3/2 80/-60 2.2/3 , HFA3127 Transistor Array, 5 NPN, Ultra High Frequency NPN 5 18 12 6 2 0.1 70 Intersil
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CA3161 npn tr array ICL8038 function generator Seven Transistor Array PNP CA3046 pnp array ultra low noise NPN transistor 1-888-INTERSIL ICL8038 ICL8069
Abstract: Transistor Array 657 TD62M3600F 3-ch Low-Saturation PNP Transistor Array 607 TD62M8604AF 8-ch Low-Saturation PNP Transistor Array 659 TD62M3601F 3-ch Low-Saturation PNP Transistor Array 610 , Driver 495 TD62M4600F 4-ch Low-Saturation PNP Transistor Array 635 TD62S353AFM , -ch Low-Saturation PNP Transistor Array 651 ULQ2003AP/AFW* 7-ch Darlington Driver 135 TD62M8601F 8-ch Low-Saturation PNP Transistor Array 654 *: New product 13 [ 1 ] Product Code Index 3 Toshiba
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M54597P PA2981C PA2982C 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p TD62S TD62M TD62C TB62/TD/ULN/ULQ TB62003P/F/FW TB62725AP/AF/
Abstract: is lost. After the first transistor is paid for in a linear array, additional transistors cost , transistor's high frequency performance, and it is often unsymmetrical (NPN vs PNP) as shown here. There , . DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2 uses Q4 and , transistor gain because the bias stability is achieved through transistor matching rather than negative feedback. This highlights another shortcoming of discrete transistor designs which is their lack of Intersil
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HFA3101 GILBERT CELL an-9744 Silicon Bipolar Transistor Q6 sot36 9744 825MH 900MH
Abstract: there can be both NPN and PNP transistors on one piece of silicon. The linear array is usually packaged , Figure 2 is lost. After the first transistor is paid for in a linear array, additional transistors cost , . Discrete transistors are hard to use because each transistor is expensive and space consuming, so the design becomes an art of utilizing each transistor to its maximum limit, an art which can take years to master. Single transistor designs, see Figure 1, predominate in low cost equipment where the design Intersil
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transistor arrays 5v
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