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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor a1271

Catalog Datasheet MFG & Type PDF Document Tags

A1271 transistor

Abstract: +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"15.3 â'"24.5 â'"33.2 â'"43.8 â'"53.1 â'"63.2 â'"75.5 â'"89.7 â'"105.0 â'"127.1 â'"153.7 176.4
Teledyne Cougar
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Abstract: Frequency, MHz Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature , '"105.0 â'"127.1 â'"153.7 176.4 149.7 126.0 .031 .034 .042 .056 .081 .114 .161 .215 .270 Agilent Technologies
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transistor A1036

Abstract: A1019 TRANSISTOR Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"74.5 â'"88.4 â'"101.9 â'"114.7 â'"127.1 â'"139.0 â'"150.5 â'"172.9 82.5 LINEARIZATION RANGE
Teledyne Cougar
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Abstract: +100°C â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"52.3 â'"66.9 â'"81.0 â'"92.8 â'"102.7 â'"109.8 â'"114.9 â'"119.4 â'"123.2 â'"127.1 â'"130.8 â Teledyne Cougar
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transistor A1277

Abstract: a965 transistor Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"112.5 â'"116.4 â'"120.1 â'"123.6 â'"127.1 â'"130.5 â'"133.9 â'"137.4 â'"140.9 â'"144.3 dB
Agilent Technologies
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Abstract: +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"116.4 â'"120.1 â'"123.6 â'"127.1 â'"130.5 â'"133.9 â'"137.4 â'"140.9 â'"144.3 dB 14.43 14.42 Teledyne Cougar
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A1308 transistor

Abstract: â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"52.3 â'"66.9 â'"81.0 â'"92.8 â'"102.7 â'"109.8 â'"114.9 â'"119.4 â'"123.2 â'"127.1 â'"130.8 â
Agilent Technologies
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Abstract: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation â'¢ 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor , '49.8 â'62.9 â'76.1 â'87.4 â'98.0 â'108.0 â'118.1 â'127.1 â'135.6 â'143.4 â'151.0 â -
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PA862TD-T3 P15685EJ1V0DS00 P15685EJ1V0DS

nec A1394

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , â'47.8 â'83.4 â'109.1 â'127.1 â'142.9 â'156.1 â'164.8 â'173.0 177.9 169.6 164.0
Renesas Electronics
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nec A1394 PU10104EJ01V0DS
Abstract: TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE , '"106.3 â'"114.4 â'"121.0 â'"127.1 â'"135.1 â'"139.8 â'"145.3 â'"151.2 â'"156.7 â'"162.9 â , '"62.4 â'"77.0 â'"88.8 â'"99.1 â'"107.2 â'"113.5 â'"119.5 â'"127.1 â'"131.8 â'"137.3 â'"142.8 â Renesas Electronics
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Abstract: TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , '106.3 â'109.7 â'113.4 â'116.8 â'120.4 â'123.5 â'127.1 3.0 4.0 5.0 0.638 0.683 0.745 Renesas Electronics
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PU10085EJ02V0DS
Abstract: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '18.8 â'34.7 â'49.8 â'62.9 â'76.1 â'87.4 â'98.0 â'108.0 â'118.1 â'127.1 â'135.6 â Renesas Electronics
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PU10067EJ01V0DS

transistor A1024

Abstract: A1712 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , 0.242 0.239 0.233 0.229 0.224 0.232 â'122.3 â'127.1 â'132.3 â'137.1 â'142.2 â
NEC
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transistor A1024 A1712 nec a1232 2SC5761-T2