500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor W1A

Catalog Datasheet MFG & Type PDF Document Tags

transistor w1A

Abstract: w1a transistor voltage Biâ'CMOS process technology. Forward and reverse rotation are available. 2, 1â'2, W1â , % 2W1â'2 Phase 100% 0% CCW L B PHASE CURRENT W1â'2 Phase CW A PHASE CURRENT 2 , L L 2 Phase H L 1â'2 Phase L H W1â'2 Phase H H 2W1â'2 Phase 2 , ) 8 2001-06-13 TA8435H/HQ W1â'2 PHASE EXCITATION (M1 : L, M2 : H, CW MODE) 9 2001-06-13 , Terminal ICC2 1 Output Open, RESET ENABLE :H :L mA (W1â'2, 2W1â'2 Phase excitation
Marktech Optoelectronics
Original
transistor w1A w1a transistor transistor W1A 78 W1A 93 HZIP25 TA8435HQ

transistor W1A

Abstract: transistor w1b 08 13 12 GND MAX5408 MAX5409 13 AGND 12 H1 11 L1 10 W1A 9 N.C. (W1B) CS 2 11 AGND , 7 W0A N.C. (W0B) N.C. (W1B) W1A QFN (4mm x 4mm , 13 14 15 16 1 2 - NAME SCLK CS H0 L0 W0A W0B W1B W1A L1 H1 AGND GND VLOGIC VDD DOUT DIN N.C FUNCTION , position of wiper W1A Undefined Data for mute register (see Table 3) Data for zero-crossing detection register (see Table 5) Return wiper register for W0A Undefined Return wiper register for W1A Undefined
Maxim Integrated Products
Original
transistor w1b 08 MAX5408/MAX5409 MA5409

transistor W1A

Abstract: zero crossing detector AGND 12 H1 11 L1 W0A 7 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A , ) ( ) ARE FOR MAX5409/MAX5411 ONLY 8 W1A THIN QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1
Maxim Integrated Products
Original
MAX5411 MAX5410 zero crossing detector log 50 k potentiometer MAX5408EEE MAX5408ETE MAX5409EEE MAX5408/ MAX5410/MAX5411 MAX5408-MAX5411
Abstract: 10 W1A W0A 7 9 N.C. (W0B) 8 N.C. (W1B) QSOP (5mm x 6mm) 5 6 7 W0A N.C. (W0B) N.C. (W1B) ( ) ARE FOR MAX5409/MAX5411 ONLY 8 W1A THIN QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = â'donâ , 1 0 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 Maxim Integrated Products
Original

transistor W1A

Abstract: zero crossing detector AGND 12 H1 11 L1 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A W0A 7 9 , FOR MAX5409/MAX5411 ONLY 8 W1A THIN QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1
Maxim Integrated Products
Original
w1a 11 L0613

transistor W1A

Abstract: MAX5408 . (W0B) N.C. (W1B) 8 10 W1A 7 W0A 7 6 H0 5 VDD 16 VDD DOUT 1 CS 4 DOUT 16 TOP VIEW W1A ( ) ARE FOR MAX5409 ONLY QFN (4mm x 4mm , - - 7 9 W1B Wiper Terminal B of Resistor 1 8 10 8 10 W1A Wiper , Undefined 0 1 0 5-bit DAC Data Program position of wiper W1A 0 1 1 5-bit DAC Data , Undefined 1 1 0 00010 Return wiper register for W1A 1 1 0 00011 Undefined 1
Maxim Integrated Products
Original
MAX5408EGE MAX5409EGE w1a 62 MAX5480

zero crossing detector

Abstract: transistor W1A 11 L1 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A W0A 7 N.C. (W0B) 8 , MAX5409/MAX5411 ONLY 8 W1A QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1
Maxim Integrated Products
Original
zero crossing IC data sheet w1a transistor w1a 40 zero crossing W1A 60

transistor w1b 08

Abstract: transistor W1A H1 11 L1 L0 6 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A W0A 7 , ) ( ) ARE FOR MAX5409/MAX5411 ONLY 8 W1A QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1
Maxim Integrated Products
Original

transistor W1A

Abstract: w1a transistor manufacturing defect that might cause a data retention fault is an open pull up transistor within a cell. After a sufficient amount of time, leakage currents will cause the node with the open pull up transistor , operation w0a to entire array 2nd March-G operation (r0a,w1a,r1,w0b,r0b,w1b) 3rd March-G operation (r1,w0a,w1a) 4th March-G operation Address Counters Used N/A (Delay) UP UP UP UP UP UP UP UP DOWN (r1,w0a,w1a,w0b) 5th March-G operation DOWN (r0a,w1a,w0a) Wait 500ms 6th
QuickLogic
Original
RAM BIST r0a transistor RAM cells bit lines "select line" comparator test circuit up down counter

W1A 95 3 pin transistor

Abstract: LZ2314 (Ta = 25°C) PARAMETER SYMBOL RATING UNIT Output transistor drain voltage vod 0 to + 18 V Reset transistor drain voltage Vrd 0 to +18 V Overflow drain voltage vofd 0 to +55 V Test terminal, Ti Vti 0 to +18 , Operating ambient temperature Topr -20 to +70 PIN DESCRIPTION SYMBOL PIN NAME RD Reset transistor drain OD Output transistor drain OS Video output Reset transistor gate clock Vertical shift register gate clock , Output transistor drain voltage Vod 14.5 15.0 16.0 V Reset transistor drain voltage Vrd Vod V
-
OCR Scan
W1A 95 3 pin transistor LZ2314 LZ2314AK 16-PIN WDIP016-N-0500C

transistor ACY PNP

Abstract: acy transistor (heat sink) With careful mounting, thermal resistance between transistor case and heat sink under the , 'thjcase v=parameter ACY 23, ACY 32 10"6 W1» 10"3 IC"2 10"1 10° s -h mA 101 5 Input
-
OCR Scan
transistor ACY PNP acy transistor AF200 5101B ACY23 AMB2560 Q60103-

i301

Abstract: 2SA1845 x â'" ^ â'¢yâ'" h NEC Silicon Power Transistor 2SA1845 PNPi T7;^ v 2SA1845&, h 7 > V * 2 TlÃVcE(sat)ThFE^Û^(7)T-DC/DC=l >M- K^-f/^ LTftJlT'-fo 7 v x - > i ftlH^ ^'Wii & / y ^ - v T* & U, I^ax h^Wfèftc «P m olliëp/t'^-Wo o hFE if'M < ÃÃVCE(sat) T' % Ã' o VcE(sat) = â'"0.3 V @ le = -3.0 A, Ib = -0.15 A hFE ^ 100 @ Vce = -2.0 V, le = -1.0 A o X -f -y 51 > ^'Jlt ^o Ãê^^fë (Ta = 25 °C , I -0.01 -0.1 -1 -10 -100 ZWsïï-K-T. W1Å' Vcb (V
-
OCR Scan
i301 D15592JJ2V0DS00 TC-7813 D15592JJ2V0DS

transistor w2a

Abstract: ic w53 is "1". By the watchdog reset signal, the output transistor of port RESET becomes "ON" thereby sy , control register W1 b0 X 0 X X b0 Timer control register PA Timer 1 stoped (T W1A , operation started (T W1A instruction ) Timer control register W1 PWM1 function enabled 1 1 0 1 , instruction ) b3b0 Pull-up control r egister PU1 X 0 X X Pull-up transistor Off (T PU1A , b0 Pull-up control reg ister PU 1 X 0 Pull-up transistor Off X X (T P U1A ins
Renesas Technology
Original
transistor w2a ic w53 w2a transistor ehic pwm control of tec transistor w2a 40 REJ05B0902-0100/R

transistor w1a 94

Abstract: TDA2590 TDA2590 PLESSE Y W Semiconductors. TDA2590 LINE OSCILLATOR COMBINATION The TDA2590 is an integrated line oscillator circuit for colour television receivers using thyristor or transistor line deflection output stages. The circuit incorporates a line oscillator which is based on the threshold , , W-1-îjn J 196 Fig. 3 TDA2590 timing relationships TDA2590 ELECTRICAL CHARACTERISTICS Test , >9.4V Output pulse duration, tp for transistor 0/P 3 14+td MS Vi
-
OCR Scan
transistor w1a 94 tda 2590 DWAT10N

100w audio amplifier circuit diagram per channel

Abstract: transistor 6c x ±44 V Thermal resistance 6j-c Per power transistor 1.7 °c/w Junction temperature Tj 150 X Operating , 16*2 J *W1«26> where 1 is the output signal frequency upper limit. R8, R9, R26, R29 Ripple filter , transistor limiting resistors during load short circuits and the peak current that flows through them when , ambient temperature. Condition 2: Power transistor junction temperature, Tj, not to exceed 150°C. Pd x , 0j-c is the power transistor thermal resistance per transistor. Note that the power dissipated per
-
OCR Scan
STK400-070 100w audio amplifier circuit diagram per channel transistor 6c x MG-200 STK400-010 2 x 40w amplifier STK400-000 STK401-000

SN7481

Abstract: sn7484 . The two remaining emitters of each transistor are used to complete the matrix connections necessary , current in the conducting transistor diverts from the address lines to the appropriate sense line and then , , R 1A, 2A.S 1A. 2A£ (12) '84A X1 X2 -X3 â  X4 â  Y1 â  Y2 â  Y3 â  Y4 - W1A -W1B WOA -WOB , other, the low voltage applied to the emitter of the transistor which is not conducting turns that transistor on causing the other transistor to turn off. Since the connection between the output of the write
-
OCR Scan
SN7481A D1332 SN7481 sn7484 LA 7522 1A1A SN5481A SN5484A SN7484A 16-BIT

MTP10N15

Abstract: 221A-06 MOTOROLA SC (XSTRS/R F) bfiE T> â  fe3b7254 QQWZb ITT â  IIOTb MOTOROLA â  SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators converters, solenoid and relay drivers. â'¢ Silicon Gate for Fast Switching , 50 í2 tyn | -w-1â'" » n i 1 [ L 4r i 50Ã1 RESISTIVE SWITCHING »d(on|. 1 fiD 50 OUTPUT
-
OCR Scan
MTP10N15 221A-06 25CC AN569 T0-220 C085-C

smd transistor w1a

Abstract: smd transistor gz increased signal â'gainâ' demands, coupled with the required downsizing of the transistor package. The , layer is required to improve the gain of the transistor. In other words, the upside of the performance , 500v ● LICC: 0306-0612 ● Array: W1A. W2A, W3A ● IDC: W2L, W3L ● LICA: (BGA Term) ● LICA , -Jun-03 Array - W1A, W2A, W3A 30-Jun-03 30-Jun-03 IDC - W2L, W3L 30-Jun-03 30-Jun-03 LICA (BGA
AVX
Original
smd transistor w1a smd transistor gz W1A smd transistor smd transistor w1a 25 smd transistor marking A14 AVX tantalum marking CX2520SB CX-101F KSX-23 CX-4025S CX-96F KSX-35

equivalent transistor A92

Abstract: TRANSISTOR A98 TC78S600FNGFTG Characteristics Symbol Test circuit Output transistor switching characteristics (Design , 2012-09-19 TC78S600FNGFTG W1â'2 phase excitation (M1: L, M2: H, CW mode) CK MO (%) 100 92 71 , t13 t14 t15 t16 2012-09-19 TC78S600FNGFTG W1â'2 phase excitation (M1: L, M2: H, CCW , not used in drawing the energy of the coil because each transistor turns on and current flows in , is drawn through the parasitic diodes. 30 2012-09-19 TC78S600FNGFTG Transistor operation of
Toshiba
Original
equivalent transistor A92 TRANSISTOR A98 TC78S600FNG/FTG SSOP20 QFN24 P-WQFN24-0404-0 SSOP20-P-225-0

6822 TRANSISTOR equivalent

Abstract: transistor T009 BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 , TRANSISTOR 100V, 15A, 115W T _L 863 max 22 86 max SILICON NPN TRANSISTOR GLASS-METAL SEAL For , time when the transistor is switched from the off-state to the saturated state (see Note 3). Circuit , transistor to be measured is inserted into the test socket and then switched from the off-state with the , Storage time (tg) To measure the storage time when a transistor is switched from the saturated state to
-
OCR Scan
6822 TRANSISTOR equivalent transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 2N3055
Showing first 20 results.