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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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transistor W1A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: voltage Biâ'CMOS process technology. Forward and reverse rotation are available. 2, 1â'2, W1â , % 2W1â'2 Phase 100% 0% CCW L B PHASE CURRENT W1â'2 Phase CW A PHASE CURRENT 2 , L L 2 Phase H L 1â'2 Phase L H W1â'2 Phase H H 2W1â'2 Phase 2 , ) 8 2001-06-13 TA8435H/HQ W1â'2 PHASE EXCITATION (M1 : L, M2 : H, CW MODE) 9 2001-06-13 , Terminal ICC2 1 Output Open, RESET ENABLE :H :L mA (W1â'2, 2W1â'2 Phase excitation Marktech Optoelectronics
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w1a transistor transistor W1A 78 W1A 93 HZIP25 TA8435HQ
Abstract: 13 12 GND MAX5408 MAX5409 13 AGND 12 H1 11 L1 10 W1A 9 N.C. (W1B) CS 2 11 AGND , 7 W0A N.C. (W0B) N.C. (W1B) W1A QFN (4mm x 4mm , 13 14 15 16 1 2 - NAME SCLK CS H0 L0 W0A W0B W1B W1A L1 H1 AGND GND VLOGIC VDD DOUT DIN N.C FUNCTION , position of wiper W1A Undefined Data for mute register (see Table 3) Data for zero-crossing detection register (see Table 5) Return wiper register for W0A Undefined Return wiper register for W1A Undefined Maxim Integrated Products
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transistor w1b 08 MAX5408/MAX5409 MA5409
Abstract: AGND 12 H1 11 L1 W0A 7 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A , ) ( ) ARE FOR MAX5409/MAX5411 ONLY 8 W1A THIN QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1 Maxim Integrated Products
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MAX5411 MAX5410 zero crossing detector log 50 k potentiometer MAX5409EEE MAX5408ETE MAX5408/ MAX5410/MAX5411 MAX5408-MAX5411
Abstract: 10 W1A W0A 7 9 N.C. (W0B) 8 N.C. (W1B) QSOP (5mm x 6mm) 5 6 7 W0A N.C. (W0B) N.C. (W1B) ( ) ARE FOR MAX5409/MAX5411 ONLY 8 W1A THIN QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = â'donâ , 1 0 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 Maxim Integrated Products
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Abstract: AGND 12 H1 11 L1 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A W0A 7 9 , FOR MAX5409/MAX5411 ONLY 8 W1A THIN QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1 Maxim Integrated Products
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L0613 w1a 11
Abstract: . (W0B) N.C. (W1B) 8 10 W1A 7 W0A 7 6 H0 5 VDD 16 VDD DOUT 1 CS 4 DOUT 16 TOP VIEW W1A ( ) ARE FOR MAX5409 ONLY QFN (4mm x 4mm , - - 7 9 W1B Wiper Terminal B of Resistor 1 8 10 8 10 W1A Wiper , Undefined 0 1 0 5-bit DAC Data Program position of wiper W1A 0 1 1 5-bit DAC Data , Undefined 1 1 0 00010 Return wiper register for W1A 1 1 0 00011 Undefined 1 Maxim Integrated Products
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MAX5408EEE MAX5408EGE MAX5409EGE MAX5480 w1a 62
Abstract: 11 L1 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A W0A 7 N.C. (W0B) 8 , MAX5409/MAX5411 ONLY 8 W1A QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1 Maxim Integrated Products
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zero crossing IC data sheet w1a transistor zero crossing w1a 40 W1A LEAD W1A 60
Abstract: H1 11 L1 L0 6 MAX5408MAX5411 H0 3 10 H1 L0 4 9 L1 10 W1A W0A 7 , ) ( ) ARE FOR MAX5409/MAX5411 ONLY 8 W1A QFN (4mm x 4mm , 8 10 8 10 W1A Wiper Terminal A of Resistor 1 9 11 9 11 L1 Low , wiper W1A 0 1 1 5-bit DAC data No change 1 0 0 4-bit mute data, D0 = "don't , 00010 Readback contents of wiper register for W1A at DOUT 1 1 0 00011 No change 1 Maxim Integrated Products
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Abstract: manufacturing defect that might cause a data retention fault is an open pull up transistor within a cell. After a sufficient amount of time, leakage currents will cause the node with the open pull up transistor , operation w0a to entire array 2nd March-G operation (r0a,w1a,r1,w0b,r0b,w1b) 3rd March-G operation (r1,w0a,w1a) 4th March-G operation Address Counters Used N/A (Delay) UP UP UP UP UP UP UP UP DOWN (r1,w0a,w1a,w0b) 5th March-G operation DOWN (r0a,w1a,w0a) Wait 500ms 6th QuickLogic
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RAM BIST comparator test circuit r0a transistor RAM cells bit lines "select line" up down counter
Abstract: (Ta = 25°C) PARAMETER SYMBOL RATING UNIT Output transistor drain voltage vod 0 to + 18 V Reset transistor drain voltage Vrd 0 to +18 V Overflow drain voltage vofd 0 to +55 V Test terminal, Ti Vti 0 to +18 , Operating ambient temperature Topr -20 to +70 PIN DESCRIPTION SYMBOL PIN NAME RD Reset transistor drain OD Output transistor drain OS Video output Reset transistor gate clock Vertical shift register gate clock , Output transistor drain voltage Vod 14.5 15.0 16.0 V Reset transistor drain voltage Vrd Vod V -
OCR Scan
W1A 95 3 pin transistor LZ2314 LZ2314AK 16-PIN WDIP016-N-0500C
Abstract: (heat sink) With careful mounting, thermal resistance between transistor case and heat sink under the , 'thjcase v=parameter ACY 23, ACY 32 10"6 W1» 10"3 IC"2 10"1 10° s -h mA 101 5 Input -
OCR Scan
transistor ACY PNP acy transistor AF200 5101B hfcf Germanium Transistor Q60103-
Abstract: x â'" ^ â'¢yâ'" h NEC Silicon Power Transistor 2SA1845 PNPi T7;^ v 2SA1845&, h 7 > V * 2 TlÃVcE(sat)ThFE^Û^(7)T-DC/DC=l >M- K^-f/^ LTftJlT'-fo 7 v x - > i ftlH^ ^'Wii & / y ^ - v T* & U, I^ax h^Wfèftc «P m olliëp/t'^-Wo o hFE if'M < ÃÃVCE(sat) T' % Ã' o VcE(sat) = â'"0.3 V @ le = -3.0 A, Ib = -0.15 A hFE ^ 100 @ Vce = -2.0 V, le = -1.0 A o X -f -y 51 > ^'Jlt ^o Ãê^^fë (Ta = 25 °C , I -0.01 -0.1 -1 -10 -100 ZWsïï-K-T. W1Å' Vcb (V -
OCR Scan
i301 D15592JJ2V0DS00 TC-7813 D15592JJ2V0DS
Abstract: is "1". By the watchdog reset signal, the output transistor of port RESET becomes "ON" thereby sy , control register W1 b0 X 0 X X b0 Timer control register PA Timer 1 stoped (T W1A , operation started (T W1A instruction ) Timer control register W1 PWM1 function enabled 1 1 0 1 , instruction ) b3b0 Pull-up control r egister PU1 X 0 X X Pull-up transistor Off (T PU1A , b0 Pull-up control reg ister PU 1 X 0 Pull-up transistor Off X X (T P U1A ins Renesas Technology
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ic w53 transistor w2a w2a transistor ehic pwm control of tec transistor w2a 40 REJ05B0902-0100/R
Abstract: TDA2590 PLESSE Y W Semiconductors. TDA2590 LINE OSCILLATOR COMBINATION The TDA2590 is an integrated line oscillator circuit for colour television receivers using thyristor or transistor line deflection output stages. The circuit incorporates a line oscillator which is based on the threshold , , W-1-îjn J 196 Fig. 3 TDA2590 timing relationships TDA2590 ELECTRICAL CHARACTERISTICS Test , >9.4V Output pulse duration, tp for transistor 0/P 3 14+td MS Vi -
OCR Scan
tda 2590 transistor w1a 94 DWAT10N
Abstract: ±44 V Thermal resistance 6j-c Per power transistor 1.7 °c/w Junction temperature Tj 150 X Operating , 16*2 J *W1«26> where 1 is the output signal frequency upper limit. R8, R9, R26, R29 Ripple filter , transistor limiting resistors during load short circuits and the peak current that flows through them when , ambient temperature. Condition 2: Power transistor junction temperature, Tj, not to exceed 150°C. Pd x , 0j-c is the power transistor thermal resistance per transistor. Note that the power dissipated per -
OCR Scan
STK400-070 transistor 6c x 2 x 40w amplifier 36v 10W Audio amplifier 45W Audio amplifier MG-200 STK400-010 STK400-000 STK401-000
Abstract: . The two remaining emitters of each transistor are used to complete the matrix connections necessary , current in the conducting transistor diverts from the address lines to the appropriate sense line and then , , R 1A, 2A.S 1A. 2A£ (12) '84A X1 X2 -X3 â  X4 â  Y1 â  Y2 â  Y3 â  Y4 - W1A -W1B WOA -WOB , other, the low voltage applied to the emitter of the transistor which is not conducting turns that transistor on causing the other transistor to turn off. Since the connection between the output of the write -
OCR Scan
SN7481A D1332 SN7481 sn7484 LA 7522 1A1A SN5481A SN5484A SN7484A 16-BIT
Abstract: MOTOROLA SC (XSTRS/R F) bfiE T> â  fe3b7254 QQWZb ITT â  IIOTb MOTOROLA â  SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators converters, solenoid and relay drivers. â'¢ Silicon Gate for Fast Switching , 50 í2 tyn | -w-1â'" » n i 1 [ L 4r i 50Ã1 RESISTIVE SWITCHING »d(on|. 1 fiD 50 OUTPUT -
OCR Scan
MTP10N15 221A-06 25CC AN569 T0-220 C085-C
Abstract: increased signal â'gainâ' demands, coupled with the required downsizing of the transistor package. The , layer is required to improve the gain of the transistor. In other words, the upside of the performance , 500v ● LICC: 0306-0612 ● Array: W1A. W2A, W3A ● IDC: W2L, W3L ● LICA: (BGA Term) ● LICA , -Jun-03 Array - W1A, W2A, W3A 30-Jun-03 30-Jun-03 IDC - W2L, W3L 30-Jun-03 30-Jun-03 LICA (BGA AVX
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smd transistor w1a smd transistor gz W1A smd transistor smd transistor w1a 25 smd transistor marking A14 smd transistor w1a 50 CX2520SB CX-101F KSX-23 CX-4025S CX-96F KSX-35
Abstract: TC78S600FNGFTG Characteristics Symbol Test circuit Output transistor switching characteristics (Design , 2012-09-19 TC78S600FNGFTG W1â'2 phase excitation (M1: L, M2: H, CW mode) CK MO (%) 100 92 71 , t13 t14 t15 t16 2012-09-19 TC78S600FNGFTG W1â'2 phase excitation (M1: L, M2: H, CCW , not used in drawing the energy of the coil because each transistor turns on and current flows in , is drawn through the parasitic diodes. 30 2012-09-19 TC78S600FNGFTG Transistor operation of Toshiba
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equivalent transistor A92 TRANSISTOR A98 TC78S600FNG/FTG SSOP20 QFN24 P-WQFN24-0404-0 SSOP20-P-225-0
Abstract: BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 , TRANSISTOR 100V, 15A, 115W T _L 863 max 22 86 max SILICON NPN TRANSISTOR GLASS-METAL SEAL For , time when the transistor is switched from the off-state to the saturated state (see Note 3). Circuit , transistor to be measured is inserted into the test socket and then switched from the off-state with the , Storage time (tg) To measure the storage time when a transistor is switched from the saturated state to -
OCR Scan
6822 TRANSISTOR equivalent transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 2N3055
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