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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor ST 13003 w, TO-126

Catalog Datasheet MFG & Type PDF Document Tags

transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data , Marking Package Packaging ST13003 13003 SOT-32 Tube ST13003-K 13003 SOT , mechanical data Package mechanical data In order to meet environmental requirements, ST offers these , an ST trademark. DocID13533 Rev 5 7/10 10 Package mechanical data ST13003, ST13003-K Table 5. SOT-32 (TO-126) mechanical data mm. Dim. Min. Typ. Max. A 2.4 2.9 B
STMicroelectronics
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transistor ST 13003 w, TO-126 13003 transistor smps circuit electronic ballast by transistor 13003 transistor ST 13003 w 78/13003 transistor smps circuit 13003 Transistor NPN Power TO 126 SC06960 ID13533

transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit ST13003-K High voltage fast-switching NPN power transistor Features High voltage , . Device summary Marking 13003 Package SOT-32 Packaging Bag Part number ST13003-K June 2011 Doc , mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these , ST trademark. Doc ID 13533 Rev 4 7/10 Package mechanical data ST13003-K Table 5. SOT-32 (TO-126) mechanical data mm. Dim. Min. A B B1 D E e e1 L P Q Q1 H2 I 1 2.15 1.27 2.4 0.64 0.39
STMicroelectronics
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st 13003 TRANSISTOR npn TR 13003 transistor st 13003 w transistor switch 13003 13003 NPN Transistor features 13003 SMPS

13003 TRANSISTOR

Abstract: st 13003 TRANSISTOR npn ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage , Code: 724) R Dated : 22/03/2006 ST 13003 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD
Semtech Electronics
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13003 TRANSISTOR transistor 13003 13003 13003 npn W 13003 TRANSISTOR transistor ST 13003 w, TO-220

13003 TRANSISTOR

Abstract: transistor 13003 ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage , Code: 724) ® Dated : 22/03/2006 ST 13003 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD
Semtech Electronics
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13003 power transistor 13003 TRANSISTOR npn BR 13003 13003 TRANSISTOR equivalent ST-13003 ST-13003 TO-220

st 13003 TRANSISTOR npn

Abstract: TR 13003 transistor ST13003-K High voltage fast-switching NPN power transistor Features High voltage capability , Part number Marking Package Packaging ST13003-K 13003 SOT-32 Bag July 2008 , environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free , conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data ST13003-K SOT-32 (TO-126) MECHANICAL DATA
STMicroelectronics
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electronic ballast for fluorescent lighting 13003 electronic ballast 13003 ST13003 transistor electronic ballast for fluorescent lighting E 13003 b TRANSISTOR E 13003 TRANSISTOR

transistor ST 13003 w, TO-126

Abstract: electronic ballast 13003 ST13003-K High voltage fast-switching NPN power transistor Features High voltage capability , ST13003-K 13003 SOT-32 Bag December 2009 Doc ID 13533 Rev 3 1/10 www.st.com 10 , mechanical data In order to meet environmental requirements, ST offers these devices in different grades of , definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 13533 Rev 3 7/10 Package mechanical data ST13003-K SOT-32 (TO-126) mechanical data DIM. mm
STMicroelectronics
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TR 13003 A 13003 TRANSISTOR 126 package NPN POWER TRANSISTOR SOT-32 q 13003 13003 br ma-189

transistor ST 13003 w, TO-126

Abstract: electronic ballast for fluorescent lighting 13003 ST13003-K High voltage fast-switching NPN power transistor General features Medium voltage , Number Marking Package Packaging ST13003-K 13003 SOT-32 Bag May 2007 Rev 1 , , ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level , also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data ST13003-K SOT-32 (TO-126) MECHANICAL DATA
STMicroelectronics
Original
ST13003 cfl circuit 13003 transistor use as ballast 13003 d

transistor ST 13003 w, TO-126

Abstract: T 08 13003 transistor ST13003-K High voltage fast-switching NPN power transistor Features High voltage , schematic diagram c u d o r ) s t( Table 1. Device summary Marking 13003 Package SOT , environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second , conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are , ) s t( 7/10 Package mechanical data ST13003-K SOT-32 (TO-126) MECHANICAL DATA DIM. A B
STMicroelectronics
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T 08 13003 transistor st 13003 d d 13003 t 13003 data circuit

transistor eb 13003

Abstract: transistor EN 13003 A K SH 13003 NPN EPITAXIAL SILICON TRAN SISTO R D-PAK HIGH VOLTAGE POW ER TRANSISTOR D-PACK FOR SU R FA CE MOUNT APPLICATIONS · High speed Switching · Suitable for Switching Regulator Motor Control · Straight Lead(I.PACK, I Suffix) · Lead Formed for Surface Mount Applicattons(No Suffix) ABSO , ) Junction Temperature Storage Temperature Sym bol VcBO VcEO V ebo lc lc Ib Pc Tj T st g Rating 700 400 , ELECTRONICS KSH13003 STATIC CHARACTERISTIC NPN EPITAXIAL SILICO N TRANSISTOR . D C CU RR EN T GAIN
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OCR Scan
transistor eb 13003 transistor EN 13003 A transistor Eb 13003 A transistor EN 13003 eb 13003 SH 13003

13003 charger

Abstract: 121k 1kv capacitor Vishay SH2 Amode Tech Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB, L*W*T , , 1.5mH, 0410,Dip Q1 Transistor, HFE 20-25, NPN,13003,TO-126 PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A , bobbin when do the S1. Vishay ♦ Amode Tech Item Transistor, HFE 20-25, NPN,13003,TO-126 , 85.00% 230V 80.00% 75.00% 70.00% ST 25% Po 50% Po 75% Po 100% Po Output Power , Q1 Mosfet Transistor, 4N65,TO-220 AUK PCB1 PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A Jintong
Active-Semi
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13003 charger 121k 1kv capacitor 230v to 5v circuit using 13003 transistor ACT334 ACT512 ACT410 ACT411 ACT410/411 ACT413

230V AC primary to 12V, 1A secondary transformer

Abstract: CM 2N65 Vishay SH2 Amode Tech Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB, L*W*T , , 1.5mH, 0410,Dip Q1 Transistor, HFE 20-25, NPN,13003,TO-126 PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A , bobbin when do the S1. Vishay ♦ Amode Tech Item Transistor, HFE 20-25, NPN,13003,TO-126 , 85.00% 230V 80.00% 75.00% 70.00% ST 25% Po 50% Po 75% Po 100% Po Output Power , Q1 Mosfet Transistor, 4N65,TO-220 AUK PCB1 PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A Jintong
Active-Semi
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230V AC primary to 12V, 1A secondary transformer CM 2N65 230V ac to 5V dc usb charger circuit 230v dc 5a rectifier diode ACT330 F/400V SC053 PC817C TL431A 18AWG

LED lighting

Abstract: transistor D13003 X driver for the NPN transistor. Pin 1 is the switching pin. Pin 5 is the feedback pin that senses the , CONDITION Jintong FR1 Wire Round Resistor,1W,10ohm,KNP,5% TY-OHM Q1 Transistor,HFE 15-25 , . Pin 3 is the base driver for the NPN transistor. Pin 1 is the switching pin. Pin 5 is the feedback , ITEM CONDITION LIMITS 1 FR1 Wire Round Resistor,1W,10ohm,KNP,5% Transistor,HFE 15-25 , for the IC. Pin 3 is the base drive for the NPN transistor. Pin 1 is the switching pin. Pin 5 is the
Active-Semi
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LED lighting transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification ACT364 ACT365 PAR30 PAR38 ACT111A 8-30VDC

CNB10112

Abstract: ag2 transistor ) NPN Si Photo Transistor Connection Outline Attached Absolute Maximum Ratings VR 6 V , Characteristics - Output Transistor /Collector to Emitter Dark Current ICEO VCE=20 V Electrical , . - The point of soldering iron and solder be careful of the st yle which doesn't touch a , :mm Item Symbol A /Diameter Dimensions 180 -3.0 0 Hub W1 13.0±0.3
Matsushita Electric Industrial
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CNB10112 ag2 transistor by 02 be circuit humidity sensor datasheet infrared distance sensor datasheet light emitting diode
Abstract: 2 13.003 13.467 MAX821_E 12.970 13.500 MAX821_M Ta = Tmin to Tmax V , -10.802 -10.855 -13.235 -13.434 -13.003 -13.467 MAX821_E -12.970 -13.500 MAX821_M , p a st th e o th e r, th u s ta k in g th e in p u t o u t o f th e re g io n w h e re o s c illa , consum ption and to optim ize stability, use the la rge st va lu e p u ll-u p resisto r fe a s ib le for , at Ta = +2l?C. DIN PGND DOUT 0.066' (1.676mm) ^ ( ) ARE FOR M AX8216 ONLY. TRANSISTOR -
OCR Scan
MAX8215 MAX8216 MAX8215CPD MAX8215CSD MAX8215C/D MAX8215EPD
Abstract: Ordering number:ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions â'¢ L o w noise : N F = l . l d B typ (f = lG H z ). â'¢ H igh gain : | S 2 l e 12= l 2 d B typ (f = lG H z ). â'¢ High cu to ff , A . Z ()=50Q eu c/T Freq (MHz) IS n I Z Su 100 0.828 -4 8.7 13.003 149.5 , law s and re g u la tio n s, such p ro d u c ts m u st not be e x p o rte d w ith o u t o b ta in in -
OCR Scan

TRANSISTOR si 13003 br

Abstract: an8293 p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n , -24D) built-in AN8293SC 13 (5.2) (6.6) 13.0±0.3 12 1.0 24 0.5 NC 2 NC 3 NC , can not affect the rise of saturation voltage. The V6 voltage of upper transistor block is given as , ), assuming that Q1 and Q2 have the same saturation voltage, the saturation voltage of upper side transistor
Panasonic
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AN8293SA TRANSISTOR si 13003 br an8293 AN829 snubberless APPLICATION NOTE SSOP-24D

ksd 302 250v, 10a

Abstract: irf 5630 .transistor 1" contains more than 19000 different transistors and FETâ'™s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end Final stages FET Field-effect transistor FET-depl. Field-effect transistor, depletion type Field-effect
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OCR Scan
ksd 302 250v, 10a irf 5630 transistor 2SB 367 bf199 IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489

Atmel

Abstract: ACT8865 0.9 77 2.0 Isd Vrst 30 2.5 70 3.7 150 5.0 mA V Voc(st) 3.2 3.55 3.8 V Vth(st) Vclmp(st) Iin(st) 4.1 5.0 ­ 4.4 5.5 1.0 4.7 6.5 ­ V V mA Vth(tg) VH(tg) Iin(tog) Irst(st) 1.6 ­ ­ 1.0 1.8 200 ­40 3.7 2.0 ­ ­ 7.0 V mV , Input PNP Transistor Clamp 0 Input Open Circuit Voltage ­1.0 150 2.0 0 4.0 6.0 , for turn­on, while the NPN transistor biases the Toggle Comparator for turn­off. An economical 12
Active-Semi
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ACT2801 ACT2802 Atmel ACT8865 ACT8945A Automobile Black Box ACT2801C ACT2802B ACT2802C ACT4501
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