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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

transistor NEC D 882 p

Catalog Datasheet MFG & Type PDF Document Tags

transistor NEC D 882 p

Abstract: transistor NEC b 882 p ; Electrostatic Sensitive Device. D o c u m e n i No. P 1 0 4 0 0 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T D -2 4 1 2 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation , DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES · · · · Small Package High Gain Bandwidth Product , support, etc. The quality grade of NEC devices in " Standard" unless otherw ise specified in NEC's D
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transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor transistor NEC D 587 2SC5012-T1 2SC5012-T2

transistor NEC D 882 p

Abstract: nec d 882 p would not suffer from any damage due to those voltage or fields. D ocu m e n t No. P 1 0 5 8 6 E J3 V 0 D S 0 0 (3 rd e d itio n ) Date P u b lish e d Ju n e 1996 P P rinted in Ja pa n © N E , devices in " Standard" unless otherw ise specified in NEC's D atasheets or Data Books. If custom ers , DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Low V dd Use Driving Battery Low
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nec d 882 p NEC 882 p nec d 882 p transistor transistor transistor nec d 882 nec d 882 nec 882

transistor NEC D 882 p

Abstract: transistor NEC 882 p DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL , this device would not suffer from any damage due to those voltage or fields. D o c u m e n t No. P 1 0 5 8 6 E J3 V 0 D S 0 0 (3rd e ditio n ) D ate P u b lish ed J u n e 1 996 P P rinted in Ja pa n , 7.0 M arking I dsx ( m A ) 2 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) T O T A L P O W E R D IS S IP A T IO N vs. A M B IE N T T E M P E R A T U R E - Total Power Dissipation - m W
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TRANSISTOR b 882 p transistor NEC 882 2s D 882 p

transistor NEC D 882 p

Abstract: nec d 882 p W W °C A mJ Drain (D) 3. Source 4. Drain {Fin) Id(OC) l0(pul*e)* P ti PT2 Tch Tstg Ia s , NEC ELECTRICAL CHARACTERISTICS (T, = 25 C) | 1 > | j | | C H A R A C T E R IS T IC D ra in to S o u , m itta n c e D ra in L e a k a g e C u rre n t G a te to S o u rc e L ea k ag e C u rre n t in p u t , MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION Th e 2SK1954 is N-channel M O S Field Effect Transistor designed for high
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2SK19 c 879 transistor transistor+2sk IEI-1209 TC-2448 TC-7906

2SC5012-T1

Abstract: u s No. T D -2 4 1 2 ) D ate P u b lish ed J u ly 1 995 P P rinted in Ja p a n © NEC , DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS â'¢ S m a ll P acka ge â'¢ H igh G ain B a n d w id th P ro d u c t (ft- = 9 G H z T Y P .) â'¢ Low N oise, H igh , 65 mA T o ta l P o w e r D issip a tio n Pt 150 mW Ju n c tio n T e m p e ra tu re
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a 1232 nec

Abstract: transistor NEC D 882 p 120 T64 T64 100 to 200 D ocu m e n t No. P 11191 E J2 V 0 D S 0 0 (2 n d e d itio n ) Date Published February 1996 P Printed in Japan © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (T a = , -71.7 -76.4 -83.2 -88.2 -94.2 6 NEC [MEMO] 2SC4186 7 NEC 2SC4186 No part of this , DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC4186 is an NPN silicon epitaxial transistor intended for use as a
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a 1232 nec nec d 1590

transistor NEC D 882 p circuit diagram

Abstract: transistor NEC D 882 p ecem ber 1 995 P Printed in Japan © N EC Corporation 1 9 9 5 IO D O I- o o * D , transistor. FEATURES CONNECTION DIAGRAM â'¢ Built-in the saturaiton protection circuit of the output transistor. â'¢ The capability of output current is500 mA. â'¢ High accuracy of output , < 125 â'™ C) â'¢ Low dropout voltage. V â'¢ d if < 1 V 1 (lo < 500 mA, T j , ,uPC24M12AHF 15 V ,uPC24M15AHF 18 V M P-45G (Isolated T 0 -2 2 0 ) ,uPC24M07AHF 8 V
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transistor NEC D 882 p circuit diagram PC24M00A PC24M00 PC24M05AHF PC24M06AHF PC24M08AHF PC24M09AHF
Abstract: Prelim inary D a ta s h e e t P 13864E J1V 0DS00 NEC 2SC5507 TYPICAL CHARACTERISTICS (T a = + 2 , ta s h e e t P 13864E J1V0DS00 3 NEC 2SC5507 Gain Characteristics Insertion Power Gain , o o O Input Power 4 Pin (dBm) Input Power Prelim inary D a ta s h e e t P , -34.9 0.13 25.3 0.52 175.7 Prelim inary D a ta s h e e t P13864EJ1VODSOO NEC , Prelim inary D a ta s h e e t P 13864E J1V0DS00 9 -
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2SC5507-T2 P13864E

transistor NEC D 882 p

Abstract: TP-2253 DATA SHEET NEC SILICON TRANSISTOR 2SC4184 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4184 is designed for use as an oscillator or a , T44 T44 100 to 200 D ocu m e n t No. P 1 1 1 8 9 E J2 V 0 D S 0 0 (2 n d e d itio n ) (Previous No. TP-2253) Date Published February 1996 P . , n . r _ Printed in Japan ® NEC , Standard" unless otherw ise specified in NEC's D atasheets or Data Books. If custom ers intend to use NEC
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transistor NEC D 986 transistor 3504 nec TBB 747
Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS â'¢ Small Package â , Tstg - 6 5 to +150 Caution; Electrostatic Sensitive Device. D o c u m e n t No. P 1 0 3 9 9 E J2 V 0 D S 0 0 (2nd e ditio n ) (P re v io u s No. T D -2 4 1 1 ) D ate P u b lish ed J u ly 1 995 P P rinted in Ja p a n © NEC Corporation 1993 NEC 2SC5011 ELECTRICAL CHARACTERISTICS -
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transistor NEC D 882 p

Abstract: nec d 882 p transistor transistor sem iconductor devices, the p o ssibility of defects cannot be elim in a te d entirely. To m inim ize risks of dam age or injury to persons or p roperty arising from a defect in an NEC se m ico n d u cto r , granted under any patents, co p yrig h ts or o ther inte llectual property rights of NEC C orporation or , " unless otherw ise sp e cifie d in NEC's D ata S heets or Data Books. If custom ers intend to use NEC , contact an NEC sales re presentative in advance. A n ti-ra d io a ctive design is not im plem ented in th
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33 nec 125 t2 2SC5179 SC-70 2SC5179-T1 2SC5179-T2 P12103EJ2V0DS00 TC-2476

nec 13772

Abstract: transistor NEC b 882 DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD , , including static electricity. D ocu m e n t No. P121 0 6 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T C -2 4 7 9 ) D ate P u b lish e d N o ve m b e r 1996 N Printed in Japan © N E C , the reliability of its sem ico n d u cto r devices, the p o ssibility of defects cannot be elim inated , to use NEC devices for a pplications other than those sp e cifie d for S tandard quality grade, they
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nec 13772 nec 0882 p 2 sem 2107 SC-59 2SC5182-T1 2SC5182-T2

transistor NEC D 882 p

Abstract: 393AN m e n i No. P 1 0 3 9 9 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T D -2 4 1 1 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL , DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , T A L P O W E R D IS S IP A T IO N vs. A M B IE N T T E M P E R A T U R E 50 P t - Total Power , Current - mA GAIN B AN D W ID TH P R O D U C T vs. IN S E R T IO N G A IN vs. COLLECTOR C U RREN T
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393AN e50p NEC D 822 P 2sc 1329 nec a 634 transistor 2sc 3203 2SC5011-T1

CT 1975 sam

Abstract: transistor NEC D 588 tandard qu ality grade, they should con tact an NEC sales re p re se n ta tive in advance. A n ti-ra d io , DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF O S C /M IX . , B ase V oltage C o lle cto r C urrent T o ta l Pow er D issipation Jun ction T e m p e ra tu re S to , -70.6 -73.7 -76.9 -80.2 -83.5 -86.9 -90.2 -93.4 7 NEC 2SC4570 No part of th is d o cu m e n t may be cop ied o r rep ro d u ce d in any form o r by any m eans w ith o u t the p rio r w ritte n
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CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 2SC4570-T1 2SC4570-T2 P10408EJ2V0DS00

transistor 2sc 1586

Abstract: B 660 TG DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA , V V V V ebo Ic mA mW °C 0C Pt T, T s tg D o c u m e n i No. P 1 0 3 8 5 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T D -2 3 9 9 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © N E CC o rp o ratio n 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C) C H A R , docum ent. NEC C orporation does not assum e any lia b ility fo r in frin g e m e n t of patents, c o p
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transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor 2SC5006-T1

ac 51 0865 75 849

Abstract: 7082 B amplifier continuous effort to e n h a n c e th e re lia b ility of its sem ico n d u cto r devices, the p o ssibility , roperty arising from a defect in an NEC sem ico n d u cto r device, custom ers m ust incorporate su fficie , for life support, etc. The quality grade of NEC devices is "S tandard" unless otherw ise sp e cifie d in NEC's D ata S heets or Data Books. If custom ers intend to use NEC devices for a pplications o , DATA SHEET SILICON TRANSISTOR uPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL
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ac 51 0865 75 849 7082 B amplifier 7082 B ic audio amplifier PA807T PA807T-T1 P12153EJ2V0DS00

M 9639 transistor

Abstract: application IC 7411 10 P in - Input Power - dB f - Frequency - GHz P out - Output Power - d B P in - Input Power , PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD , subject to change without notice. Document No. P I 3 0 8 t EJ1VO0SOO (1 st edition) Date Published February 1998 N CP(K) Printed in Japan © NEC Corporation 1998 NEC H fe 2SC5455 , 0.5 Ic - 1 2 5 10 20 Collector Current - mA 50 100 2 Preliminary Data Sheet NEC GAIN
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M 9639 transistor application IC 7411 SiS 486

transistor NEC D 882 p

Abstract: nec d 882 p transistor ­57.4 ­59.8 ­62.2 ­64.8 ­67.8 ­71.7 ­76.4 ­83.2 ­88.2 ­94.2 d in ue nt co is , To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , . DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD uc t DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a
Renesas Electronics
Original

transistor NEC D 587

Abstract: static electricity. D o c u m e n t No. P12 1 0 3 E J 2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T C -2 4 7 6 ) D ate P u b lish ed N o ve m b e r 1 996 N P rinted in Ja p a n © NEC , DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD , |2 = 9 dB T Y P . @ V ce = 2 V, Ic = 7 mA, f = 2 GHz |S2ie|2 = 8.5 dB T Y P . @ V ce = 1 V, Ic = 5 mA , your NEC sales representatives to order sam ples for evaluation (available in batches of 50). o
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NEC 2561* D 431

Abstract: transistor NEC D 880 ) face to perforation side of the tape. @ V ce @ V ce P A C K AG E D R A W IN G S (Unit: mm) 1.6+0.1 , Tstg Th is d e v ic e uses rad io freq u e n c y te c h n o lo g y . T a k e d u e p re ca u tio n s , . P10398EJ2V0DS00 (2nd edition) (Previous No. TD-2488) Date Published August 1995 P Printed in Japan © NEC , hFE FB 88 80 to 160 2 NEC T Y P IC A L C H A R A C TE R ISTIC S (T a = 25 °C) 2SC5195 , ) 20 Frequency f (GHz) 4 NEC S -P A R A M E T E R S V c e = 1 V, = 1 m A, Zo = 50 Q S11 MAG
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NEC 2561* D 431 transistor NEC D 880 nec 2561 le TD248 transistor NEC 2561 NEC 2561 transistor 2SC5195-T1
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