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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor NEC D 882 p

Catalog Datasheet MFG & Type PDF Document Tags

transistor NEC D 882 p

Abstract: transistor NEC b 882 p ; Electrostatic Sensitive Device. D o c u m e n i No. P 1 0 4 0 0 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T D -2 4 1 2 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation , DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES · · · · Small Package High Gain Bandwidth Product , support, etc. The quality grade of NEC devices in " Standard" unless otherw ise specified in NEC's D
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transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor transistor NEC D 587 2SC5012-T1 2SC5012-T2

transistor NEC D 882 p

Abstract: nec d 882 p would not suffer from any damage due to those voltage or fields. D ocu m e n t No. P 1 0 5 8 6 E J3 V 0 D S 0 0 (3 rd e d itio n ) Date P u b lish e d Ju n e 1996 P P rinted in Ja pa n © N E , devices in " Standard" unless otherw ise specified in NEC's D atasheets or Data Books. If custom ers , DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Low V dd Use Driving Battery Low
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nec d 882 p NEC 882 p nec d 882 p transistor transistor transistor nec d 882 nec d 882 nec 882

transistor NEC D 882 p

Abstract: transistor NEC 882 p DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL , this device would not suffer from any damage due to those voltage or fields. D o c u m e n t No. P 1 0 5 8 6 E J3 V 0 D S 0 0 (3rd e ditio n ) D ate P u b lish ed J u n e 1 996 P P rinted in Ja pa n , 7.0 M arking I dsx ( m A ) 2 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) T O T A L P O W E R D IS S IP A T IO N vs. A M B IE N T T E M P E R A T U R E - Total Power Dissipation - m W
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TRANSISTOR b 882 p transistor NEC 882 2s D 882 p

transistor NEC D 882 p

Abstract: nec d 882 p W W °C A mJ Drain (D) 3. Source 4. Drain {Fin) Id(OC) l0(pul*e)* P ti PT2 Tch Tstg Ia s , NEC ELECTRICAL CHARACTERISTICS (T, = 25 C) | 1 > | j | | C H A R A C T E R IS T IC D ra in to S o u , m itta n c e D ra in L e a k a g e C u rre n t G a te to S o u rc e L ea k ag e C u rre n t in p u t , MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION Th e 2SK1954 is N-channel M O S Field Effect Transistor designed for high
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2SK19 c 879 transistor transistor+2sk IEI-1209 TC-2448 TC-7906

2SC5012-T1

Abstract: u s No. T D -2 4 1 2 ) D ate P u b lish ed J u ly 1 995 P P rinted in Ja p a n © NEC , DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS â'¢ S m a ll P acka ge â'¢ H igh G ain B a n d w id th P ro d u c t (ft- = 9 G H z T Y P .) â'¢ Low N oise, H igh , 65 mA T o ta l P o w e r D issip a tio n Pt 150 mW Ju n c tio n T e m p e ra tu re
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a 1232 nec

Abstract: transistor NEC D 882 p 120 T64 T64 100 to 200 D ocu m e n t No. P 11191 E J2 V 0 D S 0 0 (2 n d e d itio n ) Date Published February 1996 P Printed in Japan © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (T a = , -71.7 -76.4 -83.2 -88.2 -94.2 6 NEC [MEMO] 2SC4186 7 NEC 2SC4186 No part of this , DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC4186 is an NPN silicon epitaxial transistor intended for use as a
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a 1232 nec nec d 1590

transistor NEC D 882 p circuit diagram

Abstract: transistor NEC D 882 p ecem ber 1 995 P Printed in Japan © N EC Corporation 1 9 9 5 IO D O I- o o * D , transistor. FEATURES CONNECTION DIAGRAM â'¢ Built-in the saturaiton protection circuit of the output transistor. â'¢ The capability of output current is500 mA. â'¢ High accuracy of output , < 125 â'™ C) â'¢ Low dropout voltage. V â'¢ d if < 1 V 1 (lo < 500 mA, T j , ,uPC24M12AHF 15 V ,uPC24M15AHF 18 V M P-45G (Isolated T 0 -2 2 0 ) ,uPC24M07AHF 8 V
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transistor NEC D 882 p circuit diagram PC24M00A PC24M00 PC24M05AHF PC24M06AHF PC24M08AHF PC24M09AHF
Abstract: Prelim inary D a ta s h e e t P 13864E J1V 0DS00 NEC 2SC5507 TYPICAL CHARACTERISTICS (T a = + 2 , ta s h e e t P 13864E J1V0DS00 3 NEC 2SC5507 Gain Characteristics Insertion Power Gain , o o O Input Power 4 Pin (dBm) Input Power Prelim inary D a ta s h e e t P , -34.9 0.13 25.3 0.52 175.7 Prelim inary D a ta s h e e t P13864EJ1VODSOO NEC , Prelim inary D a ta s h e e t P 13864E J1V0DS00 9 -
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2SC5507-T2 P13864E

transistor NEC D 882 p

Abstract: TP-2253 DATA SHEET NEC SILICON TRANSISTOR 2SC4184 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4184 is designed for use as an oscillator or a , T44 T44 100 to 200 D ocu m e n t No. P 1 1 1 8 9 E J2 V 0 D S 0 0 (2 n d e d itio n ) (Previous No. TP-2253) Date Published February 1996 P . , n . r _ Printed in Japan ® NEC , Standard" unless otherw ise specified in NEC's D atasheets or Data Books. If custom ers intend to use NEC
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transistor NEC D 986 transistor 3504 nec TBB 747
Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS â'¢ Small Package â , Tstg - 6 5 to +150 Caution; Electrostatic Sensitive Device. D o c u m e n t No. P 1 0 3 9 9 E J2 V 0 D S 0 0 (2nd e ditio n ) (P re v io u s No. T D -2 4 1 1 ) D ate P u b lish ed J u ly 1 995 P P rinted in Ja p a n © NEC Corporation 1993 NEC 2SC5011 ELECTRICAL CHARACTERISTICS -
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transistor NEC D 882 p

Abstract: nec d 882 p transistor transistor sem iconductor devices, the p o ssibility of defects cannot be elim in a te d entirely. To m inim ize risks of dam age or injury to persons or p roperty arising from a defect in an NEC se m ico n d u cto r , granted under any patents, co p yrig h ts or o ther inte llectual property rights of NEC C orporation or , " unless otherw ise sp e cifie d in NEC's D ata S heets or Data Books. If custom ers intend to use NEC , contact an NEC sales re presentative in advance. A n ti-ra d io a ctive design is not im plem ented in th
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33 nec 125 t2 2SC5179 SC-70 2SC5179-T1 2SC5179-T2 P12103EJ2V0DS00 TC-2476

nec 13772

Abstract: transistor NEC b 882 DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD , , including static electricity. D ocu m e n t No. P121 0 6 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T C -2 4 7 9 ) D ate P u b lish e d N o ve m b e r 1996 N Printed in Japan © N E C , the reliability of its sem ico n d u cto r devices, the p o ssibility of defects cannot be elim inated , to use NEC devices for a pplications other than those sp e cifie d for S tandard quality grade, they
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nec 13772 nec 0882 p 2 sem 2107 71/71/MT 6351 bm 71/MT 6351 bm SC-59 2SC5182-T1 2SC5182-T2

transistor NEC D 882 p

Abstract: 393AN m e n i No. P 1 0 3 9 9 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T D -2 4 1 1 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL , DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , T A L P O W E R D IS S IP A T IO N vs. A M B IE N T T E M P E R A T U R E 50 P t - Total Power , Current - mA GAIN B AN D W ID TH P R O D U C T vs. IN S E R T IO N G A IN vs. COLLECTOR C U RREN T
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393AN e50p NEC D 822 P 2sc 1329 nec a 634 transistor 2sc 3203 2SC5011-T1

CT 1975 sam

Abstract: transistor NEC D 588 tandard qu ality grade, they should con tact an NEC sales re p re se n ta tive in advance. A n ti-ra d io , DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF O S C /M IX . , B ase V oltage C o lle cto r C urrent T o ta l Pow er D issipation Jun ction T e m p e ra tu re S to , -70.6 -73.7 -76.9 -80.2 -83.5 -86.9 -90.2 -93.4 7 NEC 2SC4570 No part of th is d o cu m e n t may be cop ied o r rep ro d u ce d in any form o r by any m eans w ith o u t the p rio r w ritte n
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CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 2SC4570-T1 2SC4570-T2 P10408EJ2V0DS00

transistor 2sc 1586

Abstract: B 660 TG DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA , V V V V ebo Ic mA mW °C 0C Pt T, T s tg D o c u m e n i No. P 1 0 3 8 5 E J2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T D -2 3 9 9 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © N E CC o rp o ratio n 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C) C H A R , docum ent. NEC C orporation does not assum e any lia b ility fo r in frin g e m e n t of patents, c o p
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transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor 2SC5006-T1

ac 51 0865 75 849

Abstract: 7082 B amplifier continuous effort to e n h a n c e th e re lia b ility of its sem ico n d u cto r devices, the p o ssibility , roperty arising from a defect in an NEC sem ico n d u cto r device, custom ers m ust incorporate su fficie , for life support, etc. The quality grade of NEC devices is "S tandard" unless otherw ise sp e cifie d in NEC's D ata S heets or Data Books. If custom ers intend to use NEC devices for a pplications o , DATA SHEET SILICON TRANSISTOR uPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL
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ac 51 0865 75 849 7082 B amplifier 7082 B ic audio amplifier PA807T PA807T-T1 P12153EJ2V0DS00

M 9639 transistor

Abstract: application IC 7411 10 P in - Input Power - dB f - Frequency - GHz P out - Output Power - d B P in - Input Power , PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD , subject to change without notice. Document No. P I 3 0 8 t EJ1VO0SOO (1 st edition) Date Published February 1998 N CP(K) Printed in Japan © NEC Corporation 1998 NEC H fe 2SC5455 , 0.5 Ic - 1 2 5 10 20 Collector Current - mA 50 100 2 Preliminary Data Sheet NEC GAIN
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M 9639 transistor application IC 7411 SiS 486

transistor NEC D 882 p

Abstract: nec d 882 p transistor ­57.4 ­59.8 ­62.2 ­64.8 ­67.8 ­71.7 ­76.4 ­83.2 ­88.2 ­94.2 d in ue nt co is , To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , . DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD uc t DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a
Renesas Electronics
Original

transistor NEC D 587

Abstract: static electricity. D o c u m e n t No. P12 1 0 3 E J 2 V 0 D S 0 0 (2nd e d itio n ) (P re v io u s No. T C -2 4 7 6 ) D ate P u b lish ed N o ve m b e r 1 996 N P rinted in Ja p a n © NEC , DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD , |2 = 9 dB T Y P . @ V ce = 2 V, Ic = 7 mA, f = 2 GHz |S2ie|2 = 8.5 dB T Y P . @ V ce = 1 V, Ic = 5 mA , your NEC sales representatives to order sam ples for evaluation (available in batches of 50). o
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NEC 2561* D 431

Abstract: transistor NEC D 880 ) face to perforation side of the tape. @ V ce @ V ce P A C K AG E D R A W IN G S (Unit: mm) 1.6+0.1 , Tstg Th is d e v ic e uses rad io freq u e n c y te c h n o lo g y . T a k e d u e p re ca u tio n s , . P10398EJ2V0DS00 (2nd edition) (Previous No. TD-2488) Date Published August 1995 P Printed in Japan © NEC , hFE FB 88 80 to 160 2 NEC T Y P IC A L C H A R A C TE R ISTIC S (T a = 25 °C) 2SC5195 , ) 20 Frequency f (GHz) 4 NEC S -P A R A M E T E R S V c e = 1 V, = 1 m A, Zo = 50 Q S11 MAG
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NEC 2561* D 431 transistor NEC D 880 nec 2561 le TD248 transistor NEC 2561 NEC 2561 transistor 2SC5195-T1
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