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TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
SN75468NSRE4 Texas Instruments 500mA, 100V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, GREEN, PLASTIC, SOP-16 visit Texas Instruments
SN75424N Texas Instruments 0.5A, 100V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, DIP-18 visit Texas Instruments
ULN2004ANSRG4 Texas Instruments 500mA, 50V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, GREEN, PLASTIC, SOP-16 visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

transistor Ic 1A datasheet NPN

Catalog Datasheet MFG & Type PDF Document Tags

transistor crossreference

Abstract: transistor cross reference Voltage : VCEO(sus) = 250 - 400V · 1A Rated Collector Current NPN Silicon Transistor Absolute Maximum , = 5V, IC = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 10V, IC = 1A VCE =10V , - NPN Silicon Transistor SEARCH | Parametric | Cross Reference space Fairchild Semiconductor , Products groups NPN Silicon Transistor Analog and Mixed Signal Contents Discrete Features | Applications , Product Folder - Fairchild P/N TIP47 - NPN Silicon Transistor back to top space space Home | Find
Fairchild Semiconductor
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TIP50TU transistor crossreference transistor cross reference TIP47TU transistor 2203 transistor Ic 1A NPN TIP47/48/49/50 TIP48 TIP49 TIP50

J13007-2

Abstract: j13007 this datasheet Design center NPN Silicon Transistor Contents ·Features ·Product status/pricing , FJPF13007 High Voltage Fast-Switching NPN Power Transistor FJPF13007 High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed · Suitable for Electronic , Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol BVCEO IEBO hFE1 hFE2 , = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB =
Fairchild Semiconductor
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J13007-2 j13007 J-13007-2 transistor j13007 F J13007-2 transistor J13007-1 FJPF13007H2TTU FJPF13007TU J13007

1A 300V TRANSISTOR

Abstract: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features â'¢ â'¢ â'¢ â , /KSC5402DT Rev. C0 www.fairchildsemi.com 1 KSC5402D/KSC5402DT â'" NPN Silicon Transistor, Planar , =125°C VCE=1V, IC=1A Max. 4 6 Base-Emitter Saturation Voltage IC=0.4A, IB=0.04A 0.6 V 0.4 1.0 V TA=25°C 0.3 0.75 V TA=125°C VBE(sat) 0.25 TA=125°C IC=1A, IB=0.2A TA=25°C 0.65 1.2 V 0.78 1.0 V TA=125°C IC=1A, IB=0.2A TA=25°C 0.65
Fairchild Semiconductor
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1A 300V TRANSISTOR

NPN Transistor 1.5A 300V

Abstract: 200H KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features · · · · · · , www.fairchildsemi.com 1 KSC5402D/KSC5402DT - NPN Silicon Transistor, Planar Silicon Transistor December 2009 , Voltage A A A A TA=125°C VCE(sat) 100 Units 0.01 TA=125°C VCE=1V, IC=1A Max , =25°C 0.3 0.75 V TA=125°C VBE(sat) 0.25 TA=125°C IC=1A, IB=0.2A TA=25°C 0.65 1.2 V 0.78 1.0 V TA=125°C IC=1A, IB=0.2A TA=25°C 0.65 0.9 V TA=25°C 0.85
Fairchild Semiconductor
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NPN Transistor 1.5A 300V 200H NPN Transistor VCEO 1000V QS 100 NPN Transistor KSC5402D/K

FJP13007

Abstract: electronic ballast with npn transistor High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed , High Voltage Fast-Switching NPN Power Transistor FJP13007 Symbol TC = 25°C unless otherwise , ) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1.0 2.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 , 125V, IC = 5A IB1 = -IB2 = 1A RL = 25 8 5 60 30 4 MHz 110 pF 1.6 µs 3.0
Fairchild Semiconductor
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electronic ballast with npn transistor

FJP13007

Abstract: electronic ballast with npn transistor FJP13007 NPN Silicon Transistor FJP13007 NPN Silicon Transistor High Voltage Switch Mode , , IB = 1A IC = 8A, IB = 2A 1 2 3 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE , tSTG Storge Time tF Fall Time VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50 8 5 60 , Rev. C www.fairchildsemi.com FJP13007 NPN Silicon Transistor Electrical Characteristics
Fairchild Semiconductor
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FJPF13007

Abstract: electronic ballast with npn transistor High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed , High Voltage Fast-Switching NPN Power Transistor FJPF13007 Symbol TC = 25°C unless otherwise , ) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1.0 2.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 , 125V, IC = 5A IB1 = -IB2 = 1A RL = 25 8 5 60 30 4 MHz 110 pF 1.6 µs 3.0
Fairchild Semiconductor
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Abstract: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor · · · · · · High Voltage , =2.5V, IC=1A VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A TC=25°C 18 25 , 0.5 V TC=125°C IC=1A, IB=0.2A TC=25°C TC=125°C 0.3 0.6 V IC=2A, IB=0.4A TC , =10V 11 VF Diode Forward Voltage IF =1A, IC =1mA, IE=0 pF MHz 0.86 0.79 TC , (DSAT) Dynamic Saturation Voltage IC=1A, IB1=100mA VCC=300V at 1 ms TC=25°C 8 V TC Fairchild Semiconductor
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Abstract: High Voltage Fast-Switching NPN Power Transistor â'¢ High Voltage Capability â'¢ High Switching , www.fairchildsemi.com FJPF13007 High Voltage Fast-Switching NPN Power Transistor FJPF13007 Symbol TC = 25Â , Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1.0 2.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 1.6 V , 8 5 60 30 4 MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 25â"¦ 110 pF 1.6 Fairchild Semiconductor
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TIP50

Abstract: TIP48 TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor · High Voltage and Switching Applications · High , /TIP50 - NPN Silicon Transistor November 2008 Symbol VCEX(sus) Parameter Collector-Emitter , = 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A VBE(sat) * Base-Emitter Saturation Voltage VCE = 10V, IC = 1A fT Current Gain Bandwidth Product V CE =10V, IC , . 1.0.0 40 www.fairchildsemi.com 3 TIP47/TIP48/TIP49/TIP50 - NPN Silicon Transistor Typical
Fairchild Semiconductor
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300V transistor npn 2a vbe 10v, vce 500v NPN Transistor OF TRANSISTOR tip47 tip50 fairchild

J13007-2

Abstract: J13007 FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP13007 High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed · Suitable for Electronic , = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL , FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor
Fairchild Semiconductor
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FJP13007H1TU J13007-1 j13007-1 fairchild fjp13007tu FJP13007H2TU FJP13007TU

fje5

Abstract: transistor 12v 1A NPN FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar , Parameter IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A Test Condition Min. Typ. 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB , www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Electrical Characteristics (Continued , Silicon Transistor Typical Performance Characteristics FJE5304D NPN Triple Diffused Planar Silicon
Fairchild Semiconductor
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fje5 transistor 12v 1A NPN

FJE5304D

Abstract: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar , 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A Test Condition Min. Typ. 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A , 100 1 10 IC[A], COLLECTOR CURRENT 3 www.fairchildsemi.com FJE5304D NPN Triple , FJE5304D NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics FJE5304D
Fairchild Semiconductor
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J3307D-1

Abstract: trace code TO-220 FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features · Built-in Diode between Collector and Emitter · Suitable for , , IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A , (sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A ©2004 Fairchild , Switching NPN Power Transistor Electrical Characteristics Symbol VF Cob tSTG tF tSTG tF Diode Forward
Fairchild Semiconductor
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J3307D-1 3307D trace code TO-220 transistor Electronic ballast SWITCH IC J3307 FJP3307DH1TU FJP3307DH2 3307D-2 FJP3307DH2TU

FJP3305

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed , High Voltage Fast-Switching NPN Power Transistor FJP3305 Symbol TC = 25°C unless otherwise , Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 1A VCE = 5V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A 0.5 0.6 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB =
Fairchild Semiconductor
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

t6790

Abstract: ZDT6790 FZT690 datasheet. TYP. MAX. UNIT -0.75 800 IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A , NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. PARAMETER SYMBOL , 0.1 0.5 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* -0.25 -0.45 -0.75 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* VBE(sat) -1.0 V
Zetex Semiconductors
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ZDT6790 t6790 zetex t6790 ic1a 100MA 45 V NPN DSA003726 T6790 FZT790
Abstract: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features â'¢ â'¢ â'¢ â'¢ â , =2.5V, IC=1A Ta=25°C 18 25 Ta=125°C Collector-Emitter Saturation Voltage 15 Ta , V Ta=25°C 0.22 0.5 V Ta=125°C IC=1A, IB=0.2A 0.3 0.6 V IC=0.8A, IB , Gain Bandwidth Product IC=0.5A,VCE=10V VF Diode Forward Voltage IF=1A, IC=1mA, IE=0 Ta , Voltage IC=1A, IB1=100mA VCC=300V at 1 µs Ta=25°C 8 V Ta=125°C 15 V IC=1A, IB1 Fairchild Semiconductor
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t6753

Abstract: transistor ic1A datasheet. 3 - 376 TYP. MAX. IC=-50mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=2V* IC , datasheet. 3 - 376 TYP. MAX. IC=-50mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=2V* IC , NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). UNIT CONDITIONS. PARAMETER , IEBO -0.1 µA VEB=-4V 0.3 0.5 V IC=1A, IB=100mA* IC=2A, IB=200mA* Collector-Emitter Saturation Voltage VCE(sat) -0.17 -0.30 -0.3 -0.5 V V IC=-1A, IB=-100mA* IC
Zetex Semiconductors
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ZDT6753 FZT653 FZT753 t6753 transistor ic1A DSA003725 T6753 100MH

j3305

Abstract: j3305-1 reliability e-mail this datasheet Design center NPN Silicon Transistor Contents ·Features ·Product status , FJP3305 High Voltage Fast-Switching NPN Power Transistor FJP3305 High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed · Suitable for Electronic , www.fairchildsemi.com FJP3305 Rev. B FJP3305 High Voltage Fast-Switching NPN Power Transistor Electrical , , IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC
Fairchild Semiconductor
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FJP3305H1TU FJP3305H2TU j3305 j3305-1 TRANSISTOR J3305-1 j3305-2 J3305-2 y transistor transistor j3305-2 J3305 J3305-1 J3305-2 FJP3305TU

TIP110 equivalent

Abstract: · · · · Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low , , IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 4V, IC = 2A VCB = , Rev. H3 Product Folder - Fairchild P/N TIP111 - NPN Epitaxial Silicon Darlington Transistor , Cross-reference VCE=4V, IC=1A (Min.) search q Low Collector-Emitter Saturation Voltage technical information q , P/N TIP111 - NPN Epitaxial Silicon Darlington Transistor space space Home | Find products
Fairchild Semiconductor
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TIP110 equivalent TIP110/111/112 TIP110 TIP112 TIP110TU
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