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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
8-326882-1 TE Connectivity Ltd TERMINAL,PIDG R 16-14 6 visit Digikey

transistor DA 2688

Catalog Datasheet MFG & Type PDF Document Tags

DA 2688

Abstract: transistor DA 2688 SILICON POWER TRANSISTOR T - 3 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T , temperature at the rate of 28m W /°C. This rating is based on the capability of the transistor to operate , V. Energy = , T exas ^ In s t r u m e n t s ' 5-263 POST OFFICE BOX 225012 · DA LLAS , STR (OPTO) 62C 37005 TIP3055 N-P-N SILICON POWER TRANSISTOR T-33-/3 electrical , ; exact values vary slightly with transistor parameters. 5-264 , Tex a s In s t r u m e n t s POST
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TIP305S DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 T0-218AA 7S265

DA 2688

Abstract: transistor DA 2688 /°C. This rating Is based on the capability of the transistor to operate safely in the circuit of Figure 2. ® CL H , Te x a s ^ In s t r u m e n t s POST O FFICE BOX 226012 · DA LLAS. TE X A S , temperature at the rate of 16 mW/°C. 4 . This rating is based on the capability of the transistor to operate , . 5-28 , Te x a s * In s t r u m e n t s POST O FFICE BOX 225012 · DA LLAS. TEXA S 75265 T E X A , Tex a s ^ In s t r u m e n t s POST O FFICE BOX 226012 · DA LLAS. TE X A S 7S265 5-29 T IP
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transistors TIP32 TIP32B texas TIP32 PNP Transistor TIP32 TIP32A TIP32B TIP32C TIP32D TIP32E

DA 2688

Abstract: tip35c equivalent temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate , OFFICE BOX 225012 · DA LLAS. TEXA S 75265 . Te x a s ^ 5.51 TEXAS INSTR {OPTO> bâ , This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2 , vary slightly with transistor parameters. Tex a s ^ In s t r u m e n t s 1283 POST O FFICE BOX 225012 · DA LLAS. TEXA S 75265 5.53 TIP Devices fiS TE X A S IN S T R -COPTO} ta b5
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tip35c equivalent 0PT03- TIP35JIP35A TIP35C TIP35D TIP35E TIP35F

C2688 li

Abstract: Texas Instruments TIP36C . This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. Texas ^ instruments POST OFFICE BOX 225012 â'¢ DALLAS. TEXAS 75265 5-59 TEXAS INSTR -COPTO} Ã'2 , the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely , nominal; exact values vary slightly with transistor parameters. Texas ^ m1 Instruments POST OFFICE BOX , , Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input puise duration is increased until
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TIP35 TIP36 TIP36A TIP36B TIP36C TIP36D C2688 li Texas Instruments TIP36C texas instruments tip36 TIP36C EQUIVALENT

TIP42C EQUIVALENT

Abstract: c2688 transistor to operate safely in the circuit in Figure 2. TIP42 TIP42A TIP42B TIP42C Collector-base voltage , /°C. 4. This rating is based on the capability of the transistor to operate safely in the circuit in , ^^ 5.~76 Instruments POST OFFICE BOX 225012 â'¢ DALLAS. TEXAS 75265 TEXAS INSTR -COPTO} wà , vary slightly with transistor parameters. (0 a) o > 0) Q Q. H , Texas ^ 5.77 Instruments POST , Transformer Corporation C-2688, or equivalent. B. Input pulse duration is increased until ICM = â'" 2.5 A. IC
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TIP42D TIP42E TIP42F TIP41 T0220AB TIP42C EQUIVALENT TIP42C texas instruments TIP42C texas TIP42 Texas Instruments TIP42A TEXAS TIP42A equivalent 36T72

C2688

Abstract: c2688 transistor rate of 16mW/°C. 4. This rating is based on the capability of the transistor to operate safely in the , at therateof 16mW/°C. 4. This rating Is based on the capability of the transistor to operate safely , Instruments Â¥ 1 post office box 225012 â'¢ dallas. texas 75265 -jzTK^rTUTT^rropToy ts '~| tS , values vary slightly with transistor parameters. (A 0) O > 0) Q Q. I- Texas Instruments post office , , 0.11 O, Chicago Standard Transformer Corporation C-2688, or equivalent. B, Input pulse duration is
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TIP30 TIP30A TIP30B TIP30D TIP30E TIP30F c2688 transistor tRANSISTOR c2688 TIP308 tip30c Texas Instruments TIP30C TIP30C

tip 31

Abstract: c2688 L /°C. This rating is based on the capability of the transistor to operate safely In the circuit in , This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2 , shown are nominal; exact values vary slightly with transistor parameters'. In s t r u m e n t s POST , CURRENT WAVEFORMS NOTES: A . L1 and L2 aie 10 mH, 0.11 O, Chicago Standard Transformer Corporation C-2688 , a clamped inductive load. 1k 5-24 In Texa s stru m en ts POST O FFICE BOX 225012 · DA
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tip 31 c2688 L tip 120 TRANSISTOR equivalent TIP31 T1P31D TIP31F T0-22DAB TIP31A TIP31B

transistor tip 31c

Abstract: TIP 29 transistor /° C. 5. This rating is based on the capability of the transistor to operate safely in the circuit , values vary slightly with transistor parameters. 2-178 Texas Instruments TYPES Tim TIP31A, TIP31B , Transformer Corporation C-2688, or equivalent. B. Input pulse width is increased until I^m = 1,8 A. Texas , â'"^v Ì, tw = 1 ms, d = 0.1 = 10%-tm- 10 ms, « 0.1 = 10
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TIP31C transistor tip 31c TIP 29 transistor TIP 31 Transistor Texas Instruments TIP31C tip318 TIP 31 EQUIVALENT

TIP74C

Abstract: transistor DA 2688 rating is based on the capability of the transistor to operate safely in the circuit of Figure 2. L = 2 0 , slightly with transistor parameters. IC = - 5 A , v BE(off) = 4 .2 V , T EST CONDITIONS^ lB1 = - 0 . 5 A , Transformer Corporation C-2688, or equivalent, B. Input pulse duration is increased until Ic m = - 3 A . , · DA LLAS, TEXA S 7S265 T E X A S I N S T R -COPTO} b2 dF | ÖTblTSfc. DOBbflSt. S 8 , 225012 · DA LLAS. TE X A S 75265 5-115 TE XA S IN ST R -COPTO} Ta de T | 0^172^ GOBbas
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TIP74C TIP73 TIP73A TIP73C TIP74 TIP74A TIP74B

br 8764

Abstract: marking 822 sot363 diodes between the gates and source protect against excessive input voltage surges. The transistor has a , Simplified outline gate1 (AMP A) 6 5 Symbol 4 AMP A DA G1A S G2 1 2 3 DB , 100.35 0.0066 50.29 0.9753 -26.88 8.2.2 Noise data for amplifier A Table 10. Noise data , Field-Effect Transistor UHF Ultra High Frequency VHF Very High Frequency 12. Revision history
NXP Semiconductors
Original
BF1214 br 8764 marking 822 sot363 6710 mosfet sp 9753 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER

AN1000CS

Abstract: PLC192 , 268.8 kbps Raw Data Rate * Reliable as Dedicated Wiring, Bit Error Rate < 1CT * Supports Up To 65,534 , functions. The system includes an object library which incorporates the standard powerline-optimized da ta , m and Response Many da ta acquisition and control systems consist of sensors, scanners, and , throughput is always a fraction of the raw da ta rate, Adaptive Networks' modulation, fast spread spectrum , transmit Path 1 amplifier o utput co n n e cte d to the base of an external NPN power transistor. Transmit
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AN1000CS PLC1000A PLC1000D PLC192 Adaptive Networks ten pao transformer PLC-1000 AN1000

R2J240

Abstract: R2J24020F X y X y X -0 TJ -0 u "0 T p33/cntr, ¡3â'" p3z/cntr0 Vref â'" El »- p3,/int, X|N -Ã' à , selected for input, pull-up transistor can be connected in units of 1-bit and a key on wake up function is , this port is selected for input, pull-up transistor can be connected in units of 4-bit. Pis, P13 are in , is selected for input, pull-up transistor can be connected in units of 4-bit. This port is in common , CMOS output. When this port is selected for input, pull-up transistor can be connected in units of 2
Renesas Technology
Original
R2J240 R2J24020F 61048fp R2J24010F R2S20020 M37512 61048FP REJ01D0001-0400

M37470M8-XXXSP

Abstract: ood716 r T R A N S IS T O R S - S m a ll S ignal NPN Dual Transistor PNP Dual T ransistor T R A N S , Unencapsulated (Dice) T ransistor PNP G eneral Purpose A m p lifie r and S w itc h in g Transistor NPN Low , NPN High Voltage Transistor PNP High Voltage Transistor NPN RF-IF A m p lifie r and O scillator NPN
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M37470M2-XXXSP M37470M2AXXXSP M37470M4-XXXSP M37470M4AXXXSP M37470M8-XXXSP M37470M8AXXXSP ood716 M37470M8-XXXS M37470M

1n52408

Abstract: 1N52428 zener requiring BJT or Transistor models - Resistance error correction - Supports discrete transistors (i.e , processors (including support of the BJT or transistor model for a CPU diode). The EMC2103 allows the user
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1n52408 1N52428 zener SFC2311 78M12HM 21L02A 10105DC ST11R ST11S RC11R RC11S L8826

BF547A

Abstract: BF547B supports CPUs requiring BJT or Transistor models - Resistance error correction - Supports discrete
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BF547A BF547B BFG65 equivalent BFG25AXD transistor bf 175 LCD01

intel 2816 eeprom

Abstract: 645-2H supports CPUs requiring BJT or Transistor models - Resistance error correction - Supports discrete
Standard MicroSystems
Original
intel 2816 eeprom 645-2H 2N3904 EMC2103-1-KP EMC2103-3-KP EMC2103-2-AP 500RPM

EMC2103

Abstract: ET 7808 supports CPUs requiring BJT or Transistor models - Resistance error correction - Supports discrete
Standard MicroSystems
Original
ET 7808 pin diagram of 7447 AT24C02B CD 5888 CD 5888 CB transistor 1107

2N3904, transistor

Abstract: transistor Bc 640 Automatically detects and supports CPUs requiring the BJT or Transistor models - Resistance error correction - , commonly found in processors (including support for BJT or transistor model for CPU diodes). The EMC2105
Standard MicroSystems
Original
2N3904, transistor transistor Bc 640 EMC2103-2 EMC2103-4
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