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TXR18AB90D2006AI TE Connectivity Ltd CIRCULAR ADAPTER visit Digikey Buy
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments

transistor D2006

Catalog Datasheet MFG & Type PDF Document Tags

transistor d2006

Abstract: D2006 contained herein. D2006 SY IM B8-5373 No.A0299-1/8 LB11988H Electrical Characteristics at Ta = 25 , 22 GND for others than the output transistor. FRAME Minimum potential of output transistor
SANYO Electric
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transistor d2006 WIN11 ILB01757 a0299 ENA0299A A0299-8/8

LB1897

Abstract: transistor D2006 products described or contained herein. D2006 SY IM B8-5750 No.8804-1/11 LB1897H Electrical , = 2.5VTYP at VCC = 5V) GND 7, 23 GND other than output transistor. The minimum potential of output transistor is at the Rf pin. FGIN (-) 8 Input pin to use the FG amp with inverted
SANYO Electric
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EN8804 LB1897 88041 HSOP28 HSOP28H ILB01542

transistor D2006

Abstract: Camera AF actuator customer' s products or equipment. 13008 TI IM 20080108-S00002, B8-8789 / D2006 SY IM B8-8570 No , of NPN transistor while RFG2 is connected to the minus input side of constant-current control
SANYO Electric
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LB8652T LB8652LP TSSOP24 VQFN44 Camera AF actuator 13008 TRANSISTOR ILB01754 ILB01819 EN7896D

transistor D2006

Abstract: . 13008 TI IM 20080108-S00002, B8-8789 / D2006 SY IM B8-8570 No.7896-1/9 LB8652T, LB8652LP , of NPN transistor while RFG2 is connected to the minus input side of constant-current control
SANYO Electric
Original

equivalent of transistor c5027

Abstract: equivalent transistor D5023 Integrated Circuit IGBT Insulated-Gate Bipolar Transistor IM Induction Motor IPM Integrated , turn-on time, some dead time must be inserted between the time one transistor of the half-bridge is , voltage-controlled transistor. It is designed for high-frequency operation and has a low-voltage drop, so it has low power losses. An Insulated-Gate Bipolar Transistor (IGBT) is controlled by a MOSFET on its base. The
Freescale Semiconductor
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equivalent of transistor c5027 equivalent transistor D5023 D5023 C5027 d3000 mosfet r2003 TRANSISTOR 56F8013 56800E DRM077

d5023

Abstract: C5027 R vice versa. Some dead time must be inserted between the time one transistor of the half-bridge is , Power MOSFETs and IGBTs. A Power MOSFET is a voltage-controlled transistor. It is designed for , Transistor (IGBT) is controlled by a MOSFET on its base. A built-in temperature monitor and overtemperature
Freescale Semiconductor
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C5027 R C5027 r transistor mosfet C6017 Transformer ei33 NEC2501 C5027 transistor DRM075

Analog Devices model 233J

Abstract: TSDC1610 group feature differential bipolar transistor input stages achieving input drifts as low as 1/4 fSV/°C
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OCR Scan
AD0042C Analog Devices model 233J TSDC1610 AC1007 analog devices alfa uv API 45 AD 233J 310J/K 311J/K 424J/K AD101A AD108/108A AD201A

transistor D2058

Abstract: K D2058 Y drive in operation, frequency attained and overload indication, via transistor (open collector). , , please use high quality components to avoid contact bounce. Transistor outputs (MO1, MO2, MCM) Make
Delta Electronics
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transistor D2058 K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor M1067 M1066 C2000