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SSM10N961L
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 |
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TC75S102F
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Toshiba Electronic Devices & Storage Corporation
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Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 |
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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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XPQR8308QB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
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XPQ1R00AQB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL |
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