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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ÉHHHH| I 2N3417 2N3417 NPN SILICON TRANSISTOR 2N3417 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation VCBO VCEO VE BO IC Tj,fstg 50V 50V 5V 500mA -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX , Current Gain HFE 180 540 IC=2mA VCE=4.5V Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC=50mA ... | OCR Scan |
1 pages, |
transistor BO 540 2N3417 2N3417 abstract |
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| Abstract: if» î&sisiBsf missilllii mm IBI® MÈÊÊÈÊp ÊÈËSÊi IliNV rl Mmmà Jt ligglgig H bHHHhî WSÊm T ISr Vf â- dHHMHfehk ^HEHfec« 2N3417 2N3417 NPN SILICON TRANSISTOR TO-92 2M3417 2M3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation VCBO VCEO VE BO IC T j , HFE 180 540 IC=2mA VCE=4.5V Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC=50mA IB=3mA ... | OCR Scan |
1 pages, |
NPN transistor ECB TO-92 2N3417 datasheet abstract |
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| Abstract: CZD1952 CZD1952 PNP High Speed Elektronische Bauelemente Switching Transistor RoHS Compliant Product TO-252 Description The CZD1952 CZD1952 is designed for high speed switching applications. , 1.50 5.40 5.80 0.80 1.20 o Absolute Maximum Ratings at TA=25 C (unless otherwise specified , V Emitter to Base Voltage VE BO Collect Current (DC) IC Collector to Base Voltage , Elektronische Bauelemente PNP High Speed Switching Transistor Characteristics Curve http ... | Original |
2 pages, |
CZD5103 CZD1952 transistor BO 540 CZD1952 abstract |
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| Abstract: CZD42C CZD42C PNP Epitaxial Planar Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product TO-252 Description The CZD42C CZD42C is designed for use in general purpose amplifier and , 1.50 5.40 5.80 0.80 1.20 o Absolute Maximum Ratings at TA=25 C (unless otherwise specified , V Emitter to Base Voltage VE BO -5 .0 V Collect Current (DC) IC - 6.0 - 10 , Elektronische Bauelemente PNP Epitaxial Planar General Purpose Transistor Characteristics Curve http ... | Original |
2 pages, |
CZD42C CZD42C abstract |
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| Abstract: CTD31C CTD31C NPN Epitaxial Planar Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product TO-252 Description The CTD31C CTD31C is designed for use in general purpose amplifier and , 5.40 5.80 0.80 1.20 o Absolute Maximum Ratings at TA=25 C (unless otherwise specified , V Emitter to Base Voltage VE BO 5 .0 V Collect Current (DC) IC 3.0 A , Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any ... | Original |
2 pages, |
CTD31C CTD31C abstract |
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| Abstract: CZD41C CZD41C NPN Epitaxial Planar Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product TO-252 Description The CZD41C CZD41C is designed for use in general purpose amplifier and , 1.50 5.40 5.80 0.80 1.20 o Absolute Maximum Ratings at TA=25 C (unless otherwise specified , V Emitter to Base Voltage VE BO 5 .0 V Collect Current (DC) IC 6.0 A , ://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A NPN Epitaxial Planar General Purpose Transistor TO-252 Any ... | Original |
2 pages, |
transistor BO 540 CZD41C CZD41C abstract |
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| Abstract: CZD32C CZD32C PNP Epitaxial Planar Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product TO-252 Description The CZD32C CZD32C is designed for use in general purpose amplifier and , 5.40 5.80 0.80 1.20 o Absolute Maximum Ratings at TA=25 C (unless otherwise specified , V Emitter to Base Voltage VE BO -5 .0 V Collect Current (DC) IC - 3.0 - 5.0 , Elektronische Bauelemente PNP Epitaxial Planar General Purpose Transistor Characteristics Curve http ... | Original |
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CZD32C CZD32C abstract |
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| Abstract: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain , discharge sensitive device, observe handling precaution! Type Marking BFP 540 ATs Pin , soldering point to the pcb S 1 Jun-09-2000 SIEGET 45 BFP 540 Electrical Characteristics , BFP 540 Common Emitter S-Parameters f GHz S11 MAG ANG S21 S12 S22 MAG , 3 Jun-09-2000 SIEGET 45 BFP 540 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE ... | Original |
8 pages, |
VPS05605 transistor BO 540 BFP-540 datasheet abstract |
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| Abstract: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain , SIEGET 45 BFP 540 For non-linear simulation: Use transistor chip parameters in Berkeley , discharge sensitive device, observe handling precaution! Type Marking BFP 540 ATs Pin , soldering point to the pcb S 1 Oct-27-1999 SIEGET 45 BFP 540 Electrical Characteristics , Oct-27-1999 SIEGET 45 BFP 540 Common Emitter S-Parameters f GHz S11 MAG ANG S21 ... | Original |
8 pages, |
VPS05605 datasheet abstract |
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| Abstract: START540 START540 NPN Silicon RF Transistor · LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V · HIGH , achieved with GaAs products before. (s) ct du o s) t( BRANDING 540 uc d ro P , SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) TRANSISTOR CHIP DATA Symbol Value , L3 B' L=0.35 nH Transistor Chip C' .te le L5 so Ob - L=0.3 nH ro P , 54.5 55 55.5 T 14.4 Ao 2.25 Bo 2.7 Ko 1.2 Po 3.8 (cumulative 10 Po ... | Original |
7 pages, |
transistor BO 540 START540TR START540 BS 88.4 BF 320 START540 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .0 Gp min @f max (dB) 18.5 Frequency(MHz) 9.0 FL ±0.5 CTB -54.0 DESCRIPTION Power Doublers Gp .5 CTB -54.0 CSO -56.0 d2 -69.0 VO 61.5 f min 40 TOTAL DC CURRENT CONSUMPTION MAX(mA) 410 .0 Gp min @f max (dB) 20.0 f min 40 CSO -54.0 RETURN LOSS (INPUT/OUTPUT) MIN(dB) 20 DESCRIPTION .0@50MHz RETURN LOSS (INPUT/OUTPUT) MIN(dB) 20 Gp typ @f min (dB) 21.5 XM -60.0 CSO -54.0 FL ±0 .0 CSO -54.0 @ Ch 129 VO 63.5 @ Vo 44.0 FLATNESS MAX(dB) +-0.3 Note (1.4) SLOPE CABLE www.datasheetarchive.com/files/philips/catalog/parametrics/16-v1.html |
Philips | 21/01/2002 | 140.7 Kb | HTML | 16-v1.html |
| Thyristors BR100/03 BR100/03 BR100/03 BR100/03 I BO (uA) 50 V BO (V) 28 to 36 Category Diacs IRF540 I D max(A) 23.0 V DS @ max.(V) 100 R DS(on) (m Ohm) 77.0@10V Category 75 - 300 V N-channel MOSFETs IRF540S R DS(on) (m Ohm) 77.0@10V V DS @ max.(V) 100 Configuration VCEO max(V) 30 Category Single low power transistors BC856S BC856S BC856S BC856S VCEO max(V) 65 h low power transistors BC858B BC858B BC858B BC858B fT min(MHz) 100 VCEO max(V) 30 I C max www.datasheetarchive.com/files/philips/catalog/parametrics/27-v1.html |
Philips | 21/01/2002 | 99.47 Kb | HTML | 27-v1.html |
| BR100/03 BR100/03 BR100/03 BR100/03 Category Diacs I BO (ÂuA) 50 I FRM (A) 2 Package SOD27 (DO-35 DO-35 DO-35 DO-35, SC-40 SC-40 SC-40 SC-40)@package/SOD27.html V BO (V) 28 to 36 IRF540 Category 75 - 300 V N-channel MOSFETs Configuration Single N BC848B BC848B BC848B BC848B Category Single low power transistors Complement BC857B BC857B BC857B BC857B fT min (MHz BC848W BC848W BC848W BC848W Category Single low power transistors Complement BC858W BC858W BC858W BC858W fT min (MHz www.datasheetarchive.com/files/philips/catalog/parametrics/27.html |
Philips | 25/04/2003 | 130.95 Kb | HTML | 27.html |
| BR100/03 BR100/03 BR100/03 BR100/03 I BO (ÂuA) 50 I FRM (A) 2 V BO (V) 28 to 36 IRF540 Configuration Single N-channel I D DC (A) 23 R DS(on) (mOhm) 77 VHF VDMOS RF POWER Transistor Efficiency (%) 55 Frequency (MHz) 175 Load power (W) 2 Description UHF LDMOS RF POWER Transistor Efficiency (%) 40@CW Frequency (MHz) 0 - 2000 Load power www.datasheetarchive.com/files/philips/catalog/parametrics/27-v2.html |
Philips | 07/06/2005 | 85.84 Kb | HTML | 27-v2.html |
| GO BO CR CB CG CHR/SVHS V CC1 CHROMA/SCANNING/BUS SUPPLY BYI RYI B-Y OUTPUT R-Y OUTPUT R-Y INPUT B the VCO on the video signal frequency, w the second PLL compensates the line transistor storage time d1p Delay Time PAL SVHS mode 330 370 400 ns t d2 Delay Time SECAM SVHS mode 500 540 580 ns t d3p 2 . E P S Figure 20 : Pins 27, 28, 29 - BO, GO, RO 30 V CC1 GND1 2 1 1 2 B - 2 3 . E P S Figure 21 BEXT RO GO BO GEXT REXT FBEXT CR CB CG Y/CVBS GND1 CHR/SVHS V CC1 2 1 1 2 B - 3 4 . E P S Notes : - STV www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6108-v1.htm |
STMicroelectronics | 02/04/1999 | 35.37 Kb | HTM | 6108-v1.htm |
| BYO RYO LFB/SC HOUT VOUT VAMP SLPF SXTL BCL ICAT RO GO BO CR CB CG CHR/SVHS V CC1 line transistor storage time. - Three time constants for the first PLL. w the long time constant is 400 ns t d2 Delay Time SECAM SVHS mode 500 540 580 ns t d3p Delay Time PAL CVBS mode 390 425 460 B - 2 2 . E P S Figure 20 : Pins 27, 28, 29 - BO, GO, RO 30 V CC1 GND1 2 1 1 2 B /SC HOUT VOUT VAMP S LPF S XTL BCL ICAT FTUN2 VOL S WI BOSD GOSD ROSD FBOSD BEXT RO GO BO www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6108.htm |
STMicroelectronics | 20/10/2000 | 40.32 Kb | HTM | 6108.htm |
| BYO RYO LFB/SC HOUT VOUT VAMP SLPF SXTL BCL ICAT RO GO BO CR CB CG CHR/SVHS V CC1 VCO on the video signal frequency, w the second PLL compensates the line transistor storage time 410 460 ns t d2 Delay Time SECAM SVHS mode 500 540 580 ns t d3p Delay Time PAL 4.43MHz CVBS mode , 26 - CG, CR, CB Pins 27-28-29 GND1 V CC1 2118B-23 2118B-23 2118B-23 2118B-23.EPS Figure 21 : Pins 27, 28, 29 - BO, GO, RO ICAT FTUN2 VOL SWI BOSD GOSD ROSD FBOSD BEXT RO GO BO GEXT REXT FBEXT CR CB CG Y www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4660.htm |
STMicroelectronics | 20/10/2000 | 41.44 Kb | HTM | 4660.htm |
| /SC HOUT VOUT VAMP SLPF SXTL BCL ICAT RO GO BO CR CB CG CHR/SVHS V CC1 CHROMA/SCANNING/BUS SUPPLY BYI RYI B compensates the line transistor storage time. - Three time constants for the first PLL. w the long time SVHS mode 500 540 580 ns t d3p Delay Time PAL 4.43MHz CVBS mode 390 425 460 ns t d3 Delay Time NTSC 3 , 26 - CG, CR, CB Pins 27-28-29 GND1 V CC1 2118B-23 2118B-23 2118B-23 2118B-23.EPS Figure 21 : Pins 27, 28, 29 - BO, GO, RO 30 V BEXT RO GO BO GEXT REXT FBEXT CR CB CG Y/CVBS GND1 CHR/SVHS V CC1 2118B-35 2118B-35 2118B-35 2118B-35.EPS Notes : - STV2118B STV2118B STV2118B STV2118B www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4660-v1.htm |
STMicroelectronics | 02/04/1999 | 36.91 Kb | HTM | 4660-v1.htm |
| GO BO CR CB CG CHR/SVHS V CC1 CHROMA/SCANNING/BUS SUPPLY BYI RYI B-Y OUTPUT R the second PLL compensates the line transistor storage time. - Three time constants for the first Time NTSC 3.58MHz SVHS mode 380 410 460 ns t d2 Delay Time SECAM SVHS mode 500 540 580 ns t d , CB Pins 27-28-29 GND1 V CC1 2118B-23 2118B-23 2118B-23 2118B-23.EPS Figure 21 : Pins 27, 28, 29 - BO, GO, RO 30 BOSD GOSD ROSD FBOSD BEXT RO GO BO GEXT REXT FBEXT CR CB CG Y/CVBS GND1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4660-v3.htm |
STMicroelectronics | 25/05/2000 | 38.71 Kb | HTM | 4660-v3.htm |
| GO BO CR CB CG CHR/SVHS V CC1 CHROMA/SCANNING/BUS SUPPLY BYI RYI B-Y OUTPUT R-Y OUTPUT R-Y INPUT B the VCO on the video signal frequency, w the second PLL compensates the line transistor storage time d1p Delay Time PAL SVHS mode 330 370 400 ns t d2 Delay Time SECAM SVHS mode 500 540 580 ns t d3p 2 . E P S Figure 20 : Pins 27, 28, 29 - BO, GO, RO 30 V CC1 GND1 2 1 1 2 B - 2 3 . E P S Figure 21 BEXT RO GO BO GEXT REXT FBEXT CR CB CG Y/CVBS GND1 CHR/SVHS V CC1 2 1 1 2 B - 3 4 . E P S Notes : - STV www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6108-v2.htm |
STMicroelectronics | 14/06/1999 | 35.33 Kb | HTM | 6108-v2.htm |