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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

transistor BC287

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BC287 AUDIO AMPLIFIER DESCRIPTION The BC287 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is particularly intended for use as audio amplifier. The complementary NPN type , 175 Unit V V V A W W °C 1/4 BC287 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance , * Pulsed : pulse duration = 300 us, duty cycle = 1 %. 2/4 BC287 TO39 MECHANICAL DATA mm DIM. MIN , . 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 3/4 BC287 STMicroelectronics
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BC286 transistor BC286
Abstract: 30E » â  7121237 DD30ÛÃ"3 T â  _ T-2FIâ'ž fZ7 SGS-THOMSON tMM»[iû¥[RM(gS BC286 S G S-THOMSON AUDIO AMPLIFIER DESCRIPTION The BC286 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is mainly intended for use as audio amplifier. The complementary PNP type is the BC287. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VcBO Collector-base Voltage (Ie =0) 70 V VcEO Collector-emitter Voltage (lB =0) 60 V Vebo Emitter-base Voltage (lc = 0) 5 V lc -
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30E Transistor DD30
Abstract: BC286 AUDIO AMPLIFIER DESCRIPTION The BC286 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is mainly intended for use as audio amplifier. The complementary PNP type is the BC287. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 °C at STMicroelectronics
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BC286 transistor
Abstract: . BC179. BC286. BC287. BC297 , High Gain Transistor 1400 70 4.5 70 - - - - R.F. Amplifier 750 50 4 , Transistor 500 Package Page 500 2N3137 500 f 800 2N5109 30 » (MHz) 1000 , BC270 BC271 BC272 BC280 BC281 BC282 BC283 BC284 BC285 BC286 BC287 BC294 BC295 BC297 BC298 , BC378 BC394 BC286 BC287 BC160 BC108 BC297 BC298 BC300 BC301 BC302 BC303 BC304 BC377 -
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BC350 BSX19 equivalent 2N2217 BFV64 BFW63 BFX64 BC142 BC177
Abstract: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE = = black violet white brown orange gn gr r ye bl = , -
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sx3704 8C547 AP239 6C131C IN2222A 2N50B
Abstract: r T R A N S IS T O R S - S m a ll S ignal NPN Dual Transistor PNP Dual T ransistor T R A N S , Unencapsulated (Dice) T ransistor PNP G eneral Purpose A m p lifie r and S w itc h in g Transistor NPN Low , NPN High Voltage Transistor PNP High Voltage Transistor NPN RF-IF A m p lifie r and O scillator NPN , -39 BC287 - TO-92 MPSA56 625 - 800 625 - 12(Tvp)100(Typ) 1.0 TO-92 BC52B -
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1n52408 SFC2311 1N52428 zener 21L02A esm 4148 Fairchild dtl catalog ST11R ST11S RC11R RC11S L8826
Abstract: note on next page). A. DIODE : signal, low power B. DIODE : variable capacitance C. TRANSISTOR : low power, audio frequency D. TRANSISTOR : power, audio frequency E. DIODE : tunnel F. TRANSISTOR : low , : magnetic sensitive L. TRANSISTOR : power, high frequency N. PHOTO COUPLER P. RADIATION DETECTOR Q , . CONTROL AND SWITCHING DEVICE : (e.g. thyristor), low power S. TRANSISTOR : low power, switching T. CONTROL AND SWITCHING DEVICE : (e.g. thyristor), power U. TRANSISTOR : power, switching X. DIODE -
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APY12 BAV77 varicap diode bb122 BAV12 BAV27 BAY26 NS348 NS349 NS256 NS357 BS3934 SO-26
Abstract: SEMICON INDEXES volume: i INTERNATIONAL TRANSISTOR INDEX 23nd EDITION 1997/8 â \ 1 .5 â , .* CAR CARTER TRANSISTOR CORP. CRT CENTRAL SEMICONDUCTOR CORPORATION CEN CENTRONIC Ltd. CET CERLED ELS CHINA SEMICONDUCTOR CORP. CSC CLAI REX ELECTRONICS CLX CLEVITE TRANSISTOR PRODUCTS* ITT COLLMER SEMICONDUCTOR INC. COL COMMUNICATIONS TRANSISTOR CORP.* CTC COMPAGNIE DE LAMPS* CDL COMPAGNIE INDUSTRIELLE , DIODE TRANSISTOR INC. DIT DIODES INC. Dll DIOTEC ELECTRONICS CORP. DIO DIOTEC ELEKTRONISCHE -
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MZ 13001 TRANSISTOR BD559 w3819b field effect transistor Transistor B0243C 7119 amperex NEC Tokin oe 907 VV276
Abstract: (LEDs) Photodetectors Triacs Thyristors (SCRs) Lead Identification Transistor Comparable Types Pages i , Silicon Transistor (BBF) Ltd, Seronera House, Linden Chase, Sevenoaks, Kent TN13 3JU Teledyne , 05 05 ITT ITT u u u BC263 0C286 BC287 0C288 BC29A PNP NPN PNP NPN PNP Si Si Si Si Si i 00 t 800 -
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aeg diode Si 61 L SILICONIX U315 2sd341 2SD716, 2SB686 35W amplifiers 8C737-40 ac128 A0595 A0605 A0608 A0611 A0613 A0616
Abstract: audio pre-amps 1 Transistor Application Slide Rule Features. Find a replacement every time , technician. Assures fast, accurate selec­ tion of the right transistor for your applicatioa Provides a , R E C T IF IE R I« R TRANSISTOR SPECIFICATIONS PART DESCRIPTION CASE NO. TYPE , lifie r High Voltage Silicon Power Transistor Small Signal, Low Noise A m p lifie r Medium Current , A udio A m p lifie r & High Frequency Switching Transistor High Voltage A udio Germanium Power -
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T35W CS9011 2SC965 sr 6863 D transistor kt 606A TRANSISTOR st25a 10DB2P 10DB4P 10DB6P D200MP IRTR-51 991991T1
Abstract: in high power audio stages should always be accompanied by a check on the transistor bias to , silicone grease to both sides of the washer to insure maximum thermal efficiency. To extend transistor , variety of transistor heat sinks, insulator kits, and heat sink compound for this purpose. 1 ECG , TO-66 Fig. 9 ECG131 ECG 131MP â'˜ Transistor Outlinesâ'"Page 6 3 ECG SEMICONDUCTOR , Switch 4000 Typical 25 10 Ig 25 Transistor Outlinesâ'"Page 6 D ra in S o u rc e V o -
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st178 CK705 diode E1110 ME1120 TE1088 ecg semiconductor replacement guide ECG303 8M-26102 66X0003-001 68X0003-001 CX-9000 T-E0317
Abstract: Integrated Circuits Diodes/Bridges Diodes Transistor Opto Integrated Circuits General Metal Can -
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100414DC 5401DM fsa2719m 4727BPC FCM7010 FCM7004 962-5011/TWX 20-PIN 19-PIN
Abstract:  SEMIGON VOLUME 1 INDEX , VOLUME 1 INTERNATIONAL TRANSISTOR INDEX 15th EDITION 1989 CONTENTS SECTION CARD Manufacturersâ , of Sections 3, 4 & 5 particularly useful where the manufacturers of each transistor are given in , CM12 0BZ. Tel:0277 630000 Tlx:995607, Fax:0277 631111 CLE CLEVITE TRANSISTOR PRODUCTS* 200 Smith , * (See SED) 101 Boulevard Murat Paris 16, France TEL:525 7575 CTC COMMUNICATIONS TRANSISTOR CORP.* 301 -
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WIMA TFM Beckman 785-1 2N3642 wima TFM-.1UF-160V transistor 2N2359A mkb3 RG121JU 672/3D CK05/06 N50OHM
Abstract: IRTR-51 IRTR-51 TR-21 TR-21 TR-21 SC286 BC287 BC288 BC289 BC289A TR-21 TR.19 TR -
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2M222 8D139 2SC1313 equivalent Avantek rf amplifier UAA-8616M hitachi 2SJ82 RCA 40934 transistor T0226 T0237
Abstract: change's to D.A.T.A. Inc , P.O. Box 26875, San Diego, CA 92126. TECHNICAL SECTIONS Low-Power Transistor , .563 19. Transistor Manufacturersâ'™Sales Offices .564 20. Transistor Manufacturersâ'™Logos .582 21. Transistor Manufacturersâ'™Codes, Names & Addresses , ) .134A&253A Semiconductor, Inc. Inside Cover Silicon Transistor Corp. (STC , comprehensively on what is presently being produced throughout the world in the field of transistor devices. While -
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Tr431 B1274 transistor 1N1525 BSF17 BG237A BA145 diode 25T12 Z1012 Z1014 Z1018 AA138 AA140
Abstract: . â'¢ Be certain to check the transistor bias when replacing devices in high power audio stages , -401 80 7 200 40 1 ty p . IN D -7 5 7 30 PHOTO TRANSISTOR OPTO-ISOLATOR (LED DEVICE -
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c547b equivalent PTC SY 16P ptc 75s ZN107 2SD2021 2SA1030C 201069F S-171 CH-5400