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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor BC109

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC 107 BC 108 BC109 Collector-emitter voltage Vces 50 30 30 V Collector-emitter voltage Vceo 45 20 , order does not include any exact indication of the current amplification group desired, a transistor of , 1) The transistor is overloaded to such an extent that the DC current gain decreases to ftFE ~ 20 2 , temperature Ptot = '(7};fith = parameter BC107. BC 108, BC109 Permissible pulse load /thjc= f (*); v , \ \ 4 BC107, BC108. BC109 100 200 "0 KM )0"6 10'5 K)'4 10~3 10"2 10*' 10° 101s -"t
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TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor BC1071 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A

Zener Diode 3v 400mW

Abstract: transistor bc548b RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor, Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor
Philips Semiconductors
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Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart DIAC OB3 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF

Transistor BC109

Abstract: 8C109 Manufacturers of World Class Discrete Semiconductors BC107,A,B BC108,A,B,C BC109,B,C NPN SILICON TRANSISTOR , , BC108, BC109 series types are silicon NPN small signal transistors manufactured by the epitaxial planar , =150°C (BC107) VCB=20V, (BC108, BC109) VCB=20V, Ta=150°C (BC108 , 8C109) c=10uA (BC107) 0 = 1OyA (BC108, BC109) c=10mA (BC107) c=10mA (BC108, BC109) e=10uA (BC107) e=10uA (BC108, BC109) q=10mA, Ig=0.5mA C , , BC109B) Vce=5.0V, IC=1OyA (BC109) VCE=5.0V, IC=1OyA (BC108C, BC109C) Vce=5.0V, lc=2.0mA (BC107) VCE
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BC107B BC107A applications of Transistor BC108 BC108 transistor Transistor BC107 BC109C datasheet DATASHEET Transistor BC109 BC108B BC108A 100MH

TRANSISTOR bc107 current gain

Abstract: bc107a amplification. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. PINNING PIN 1 2 3 BC107; BC108; BC109 DESCRIPTION emitter base collector, connected to the case QUICK REFERENCE DATA SYMBOL VcBO BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Plot hFE peak collector current total power dissipation DC current gain BC107 BC108 BC109 Tamb -25 °C lc = 2 mA , SYMBOL VcBO BC107 BC108; BC109 V CEO BC107; BC108; BC109 PARAMETER collector-base voltage
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transistor TO-92 bc108 BC109c transistor transistor bc107b BC108B transistor bc107 applications BC108-BC109

bc108b

Abstract: bc109c BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon , BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 UNITS V V V mA mW °C °C/W , ) VCB=25V (BC108, BC109) VCB=25V, TA=125°C (BC108, BC109) IC=2.0mA (BC107) 45 IC=2.0mA (BC108, BC109) 25 IE=10A (BC107) 6.0 IE=10A (BC108, BC109) 5.0 IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA IC=10mA, IB
Central Semiconductor
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Transistor BC107 NPN for transistor bc107

Transistor BC107

Abstract: TRANSISTOR C107 GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C · · · Hermetic TO , Temperature Range Storage Temperature Range 45V 50V 6V BC108 BC109 25V 25V 30V 30V 5V 5V 100mA 300mW 2mW/°C , SIGNAL TRANSISTOR BC107 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols VCEO , = 0 IC = 0 IE = 0 IE = 0 IE = 0 IE = 0 TA =125°C BC107 BC108 BC109 Units V >45 >6 , ://www.semelab-tt.com Document Number 9695 Issue 1 Page 2 of 4 GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107
Semelab
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TRANSISTOR C107 BC10 npn transistor transistor c109 c107 transistor c109 TRANSISTOR BC109* Transistor BC109/A/B/C BC107/108

TRANSISTOR C107

Abstract: BC10 npn transistor GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C â , Range 45V 50V 6V BC108 BC109 25V 25V 30V 30V 5V 5V 100mA 300mW 2mW/°C -55 to , SIGNAL TRANSISTOR BC107 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions VCEO Collector Emitter IC = 2mA VEBO Emitter Base BC109 IB , Number 9695 Issue 1 Page 2 of 4 GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107 DYNAMIC
Semelab
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Transistor BC107

Abstract: BC109 BC107 BC108 BC109 MECHANICAL DATA Dimensions in mm (inches) GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 , (TA = 25°C unless otherwise stated) VCBO BC017 50V BC108, BC109 VCEO Collector ­ Base , BC108, BC109 VCES 20V Collector ­ Emitter Continuous Voltage With Base Shortcircuited to Emitter BC107 BC108, BC109 Emitter ­ Base Continuous Voltage Reverse Voltage 30V BC107 6V BC108
Semelab
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BC107 pin bipolar transistor bc107 DATASHEET Transistor BC107 BC109 transistor H21E BC109 BC-108

transistor BC107 specifications

Abstract: BC107 Transistor application notes DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 2 3 MAM264 , - 30 V BC107 - 45 V BC108; BC109 - 20 V - 200 mA - 300 mW BC107 110 450 BC108 110 800 BC109 VCEO - BC108; BC109 200 800
Philips Semiconductors
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transistor BC107 specifications BC107 Transistor application notes TRANSISTOR DATASHEET BC107B BC107 equivalent transistors symbol transistor BC108 BC108 operation SCA55

TRANSISTOR bc108

Abstract: BC107 Transistor application notes DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , NPN transistor in a TO-18; SOT18 metal package. PNP complements: BC177, BC178 and BC179. 2 3 , BC107 50 V BC108; BC109 - 30 V BC107 - 45 V BC108; BC109 - 20 V - 200 mA - 300 mW BC107 110 450 BC108 110 800 BC109 VCEO
Philips Semiconductors
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bc108b equivalent BC108B application note SCA54

bc109 equivalent

Abstract: BC107 equivalent transistors . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , , BC109 BCY70 BCY71 BCY72 PNP PNP PNP T018 T018 T018 50 40 5 45 45 5 25 25 5 600 250 360 10 50 â'" 10 100 , T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79 , Power Transistors (TO-3 Package) BSCECC Transistor Approvals Case Outlines BS Type Number
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BC325 bc109 equivalent EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent BCW35GP BS9363 BS9365 BD253 BU105 BU108

2N4027

Abstract: TO-18 amps pnp transistor NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE VCEO (sus) VOLTS Ic (max) AMPS h FE @ V VCE min/max @ mA/V VcE(Mt) @IC/IB V @ inA/mA C , BC107 45 0.2 110/450@2/5 0.25@ 10/0.5 4.5 150 BC108 25 0.2 120/800@2/5 0.25@10/0.5 4.5 150 BC109 25
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2N2906 2N2907 2N3251AA 2N3496 2N3497 2N3798 2N4027 TO-18 amps pnp transistor 2N2907aA IC 8002 2N4028 2n869a T0206AA 2N2906AA 2N2907AA 2N3250AA

BC107 equivalent transistors

Abstract: bc109 equivalent . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , , BC109 BCY70 BCY71 BCY72 PNP PNP PNP T018 T018 T018 50 40 5 45 45 5 25 25 5 600 250 360 10 50 â'" 10 100 , Current Amplifiers BS9365 F112 BS9365F112 BS9365F112 BC107 BC108 BC109 T018 TOI 8 T018 NPN NPN NPN 50 45
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transistor t05 equivalent transistor bc107 equivalent of transistor bc108 2N2484 equivalent transistors BC107 transistor equivalent transistor bc178 BS93G5 BFT61 BFT62 BFI79 BFT80 BFT81
Abstract: â'¢er | « BC109 SEMICONDUCTOR FORWARD EflEBNAUONAL ELECTRONICS LID. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t T a i r i F ^ r Symbol R ating C h m c te ristk 30 Collector-Base Voltage Vcbo Collector-Emitter Voltage Vceo 20 Unit V V Emitter-Base Voltage Vebo 5 V Collector Curent Collector Dissipation Ic 100 mA Pc 300 mW Tj Tstg 150 °C °c Junction Temperature -
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BC177 NPN transistor

Abstract: BC178 . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , , BC109 BCY70 BCY71 BCY72 PNP PNP PNP T018 T018 T018 50 40 5 45 45 5 25 25 5 600 250 360 10 50 â'" 10 100 , T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79
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BFQ35 BC326 BC177 NPN transistor bf179 BF177 transistor NPN BC178 BF178 BF179 8FT57 BFT58 BFT59 BC312

2N930 TEXAS INSTRUMENTS

Abstract: Transistor BC109 . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , , BC109 BCY70 BCY71 BCY72 PNP PNP PNP T018 T018 T018 50 40 5 45 45 5 25 25 5 600 250 360 10 50 â'" 10 100
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2N930 TEXAS INSTRUMENTS T018 2n2484 complementary Transistor BC177 Texas Instruments BC107 BC177 transistor 2N2483 2N2484 2N929 2N930 N2483 2N3962

TO-18 amps pnp transistor

Abstract: BC107 NEW ENGLAND SEMICONDUCTOR PNP TRANSISTOR TO-18 PACKAGE TO-18 T0206AA SMALL SIGNAL V ceo (sus) VOLTS 40 60 40 60 60 60 80 120 60 60 60 80 45 60 60 80 60 80 200 300 45 25 25 18 Ic 1>FE @ V V c e V cE (M t) DEVICE TYPE 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029 2N6432 2N6433 BC107 BC108 BC109 2N869A (max) AMPS 0.6 0.6 0.6 0.6 0.2 0.2 0.1 0.1 0.05 0.05 0.2 0.2 0.2 0.2 1.0 1.0 1.0 1.0 0.5 0.5 0.2 0.2 0.2 0.2
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EQUIVALENT TRANSISTOR bc108

Abstract: bc109 equivalent . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , , BC109 BCY70 BCY71 BCY72 PNP PNP PNP T018 T018 T018 50 40 5 45 45 5 25 25 5 600 250 360 10 50 â'" 10 100 , T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79 , BS9365 F112 BS9365F112 BS9365F112 BC107 BC108 BC109 T018 TOI 8 T018 NPN NPN NPN 50 45 6 30 20 5 30 20 5
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equivalent transistor of 2n2219a B-593 2N3440 COMPLEMENTARY BC107 pnp equivalent BFT37 BCW34 BCW35 SS9365F136 BS9365F136 BF257 BF258

C495 transistor

Abstract: C735 transistor . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , , BC109 BCY70 BCY71 BCY72 PNP PNP PNP T018 T018 T018 50 40 5 45 45 5 25 25 5 600 250 360 10 50 â'" 10 100
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C495 transistor C735 transistor c638 transistor C756 TRANSISTOR C644 transistor transistor c495 BS9300 2N2221 2N2906- 2N2221A- 2N2906A- 2N2222A

1k trimpot

Abstract: poppet "am transmitter" LM386 and the output transistor will need heatsinks. The circuit can be built "dead bug style" with the , adjust) R4: 270 K R5: 100 K R6: 560 ohms R7: 33 K R8: 5600 ohms R9: 100 ohms Q1, Q3: BC109
Medium Wave Alliance
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NTE123A NTE128 1k trimpot poppet "am transmitter" the Poppet 500 milliwatt AM transmitter lm386 microphone 2N3819 equivalent ferrite core binocular 1N4148 T37-2 2N3819 BFY51
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