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transistor BC107 specifications

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR bc108

Abstract: BC107 Transistor application notes DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , NPN transistor in a TO-18; SOT18 metal package. PNP complements: BC177, BC178 and BC179. 2 3 , BC107 50 V BC108; BC109 - 30 V BC107 - 45 V BC108; BC109 - 20 V - 200 mA - 300 mW BC107 110 450 BC108 110 800 BC109 VCEO
Philips Semiconductors
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TRANSISTOR bc108 BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C MAM264 SCA54

transistor BC107 specifications

Abstract: BC107 Transistor application notes DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 2 3 MAM264 , PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC107 50 V - 30 V BC107 - 45 V BC108; BC109 - 20 V - 200 mA - 300
Philips Semiconductors
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TRANSISTOR DATASHEET BC107B TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108 DATASHEET Transistor BC107 SCA55

2N3055 TO220

Abstract: NPN Transistor 2N3055 darlington TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC (max) VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100 100 200 500 700 1000 3000 15000 V 45 20 40 25 40 30 60 60 (min/max) 110-450 110-800 100-300 50-300 50-250 40 min. 25 20 min. mW 300 300 350 300 5000 800 40W 115W
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2N3055 TO220 NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors BC559 ZTX500 TIP122 TIP127

BC107 BJT

Abstract: electronic ballast 11w 2 pin cfl lamp 1N4148 Zener Diode STMicroelectronics VK05CFL Inductor Transistor PNP BC177 Transistor NPN BC107 , Rectifier Diode 1N4007 Diode 1N4148 Zener Diode STMicroelectronics VK05CFL Inductor Transistor PNP BC177 Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor Resistor VOGT , Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor VOGT electronic AG Resonant , Inductor Transistor PNP BC177 Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor
STMicroelectronics
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BC107 BJT electronic ballast 11w 2 pin cfl lamp 1n4148 zener diode 11w 2 pin cfl tube circuit BJT based electronic ballast schematic BJT BC107 AN1694

bc107 transistor

Abstract: the emitter-base junction of a BC107 transistor, mounted with the element in the encapsulation. To , specifications are subject to change without notice. INFRARED DETECTORS A series of single-element , , D E V ELO PM EN T DATA This data sheet contains advance Information and specifications are subject , M401RPY J V INFRARED DETECTORS This infrared detector conforms to the specifications of the M
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bc107 transistor

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR -33-11 5 .6W II aew! IT Ko.p.n asw BC107 B ^ Q r ^ - C 110 asw 3 Pulses (rO'ÍBRlCEO i p , these tolerances. 6.6. Additional informations Preliminary specifications This heading indicates that , number. Example: BC 238 C Order-No. of Type Code for TO-92 Transistors Orientation of transistor on tape1 1 Additional marking for specials5 1 *i 06 *View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tepe s) Additional marking " 0 * : Taping without
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E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T-33-II 0IN41 I3-75 T-33-11 15A3DIN

BC350

Abstract: BSX19 equivalent BC109 BC179 BC178 BCY58 BCY78 BC478 BC479 2N930 BC107 BCY79 BCY59 BC177 2N3964 BFR17 , High Gain Transistor 1400 70 4.5 70 - - - - R.F. Amplifier 750 50 4 , Transistor 500 Package Page 500 2N3137 500 f 800 2N5109 30 » (MHz) 1000 , D U S T R Y STAN D AR D B1-12 BC100 BC107 BC108 BC109 S G S -T H O M S O N S G S -T H , BC184 BC394 BFY76 BFR17 BC140 BC160 BC394 BC107 87 199 129 49 57 BC185 BC186 BC187
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BC350 BSX19 equivalent BC108 CROSS REFERENCE BFY40 SHORT DATA ON 2N744 BFW63 BC142 BC286 BC287 BC297 BC298 BC300

Transistor BC177

Abstract: SOT-18 DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor , Jun 04 Philips Semiconductors Product specification PNP general purpose transistor BC177 , switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 Fig.1 1 Simplified outline (TO , 2 MHz Philips Semiconductors Product specification PNP general purpose transistor
Philips Semiconductors
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Transistor BC177 SOT-18 BC177 pnp transistor TRANSISTOR bc177b BC177 NPN transistor BC177A

bc107 smd

Abstract: NMF0505 , BC107, ZTX451 or similar transistor capable of sinking 50mA continuous current normal isolated , °C to 70°C1 -55°C to 150°C . . . . . 300°C electrical specifications (measured at TA=25°C, at
Newport
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NMF0505 bc107 smd NMF0512 BC107/bd138 smd NMF05 NMF12 NMF24 NMF48 NMF0512S

BC107 Transistor application notes

Abstract: transistor BC107 specifications =1 CTRL 4 5 1k TTL Input 0V 0V 2N2219, BC107, ZTX451 or similar transistor capable of , . . . 300°C electrical specifications (measured at TA=25°C, at nominal input voltage) Input
Newport
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bc107 connections NMF0509 NMF0512/13 NMF0515 NMF1205 NMF1209 NMF1212

TRANSISTOR BC337 SMD

Abstract: transistor BC170 2N2907 2N6430 BCY57 CIL343 2N2369 2N2907A BC107 BCY58 CIL351 2N2369A 2N3117 , Transistor CSA1301 TIP2955 C5198 CSC3280 TIP3055 TO-3 Metal Can Package 2N3055 IRF820 , team invites request for device information and/or detailed specifications. We are constantly
Continental Device India
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TRANSISTOR BC337 SMD transistor BC170 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A

TRANSISTOR bc107 current gain

Abstract: AD7801BRU to +5.5 V, Internal Reference; CL = 100 pF, RL = 10 k to VDD and GND. All specifications TMIN to , release, not production tested. Specifications subject to change without notice. t1 t2 CS t3 , ; Internal V DD/2 Reference. All specifications TMIN to TMAX unless otherwise noted.) Parameter Limit , EXT REF VOUT VDD REF IN +5V VOUT 0.1µF GND 2N3904/ BC107 AD820/ OP295 , feedback loop of the amplifier include the BC107 and the 2N3904, which enable the current source to
Analog Devices
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AD7801 RU-20 C2995 AD7801BRU equivalent component of transistor BC107 transistor BC107 pin diagram equivalent transistor bc107

Characteristic curve BC107

Abstract: BC107 characteristic 100 pF, RL = 10 k to VDD and GND. All specifications TMIN to TMAX unless otherwise noted , . Specifications subject to change without notice. t1 t2 CS t3 WR t4 t5 D7-D0 t6 t7 , CHARACTERISTICS1, 2 (VDD = +2.7 V to +5.5 V; GND = 0 V; Internal V DD/2 Reference. All specifications TMIN to , EXT REF VOUT VDD REF IN +5V VOUT 0.1µF GND 2N3904/ BC107 AD820/ OP295 , feedback loop of the amplifier include the BC107 and the 2N3904, which enable the current source to
Analog Devices
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AD7801BR Characteristic curve BC107 BC107 characteristic CS1515

C2995

Abstract: equivalent component of transistor BC107 specifications TMIN to TMAX unless otherwise noted.) Units Bits LSB max LSB max LSB typ LSB typ µV/°C typ % FSR , product release, not production tested. Specifications subject to change without notice. t1 CS t2 , 15 4.5 20 20 20 (VDD = +2.7 V to +5.5 V; GND = 0 V; Internal V DD/2 Reference. All specifications , VIN 1k FAIL 1k PASS EXT REF VOUT GND 0.1µF REF IN VDD VOUT +5V AD820/ OP295 2N3904/ BC107 , transistors to place in the feedback loop of the amplifier include the BC107 and the 2N3904, which enable the
Analog Devices
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kt420

Abstract: ac176 ASY28,9 ASY50 ASY54N.59N ASY63N ASY76 ASY77 ASY80 BC107,A,B BC108,A,B,C BC109,B,C BC146 , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes , transistor packages. It also restricts design freedom to those types available in SOT-23, 'matchstick', and , used in the prototypes as over-specification increases cost. If biasing a transistor from a , NPN Silicon Microminiature Plastic Transistor T yp e Characteristics @ T am b= 25 °C Colour
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kt420 ac176 bc109 Transistor Equivalent list BCY70 BSY95A diffused alloy

Characteristic curve BC107

Abstract: BC107 plastic and GND; Cl=100pF to GND; All specifications TMIN to TMAX unless otherwise noted.) Parameter B , , 2 All specifications TMIN to TMAX unless otherwise noted) Parameter Limit at TMIN, TMAX (B , with VDD =5V AD7303 1Y1 DIN GND 2N3904/ BC107 - SYNC 1Y2 SYNC 74HC139 , include the BC107 or the 2N3904 which enable the current source to operate from a min Vsource of 6V . The operating range is determined by the operating characteristics of the of the transistor. Suitable
Analog Devices
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BC107 plastic bc107 curves bipolar transistor bc107 Transistor BC107 PLASTIC PACKAGE ad7830 BC107 equivalent 16-BIT

smd npn 2n2222

Abstract: tunnel diode 25 BC375 n-p-n TO-92 var. 20 1000 800 25 BC376 May 1989 envelope BC107 , mentioned in this handbook. type number â² envelope BC107 BC108 BC109 BC140 BC141 n n n n , BC107 BC107A BC107B BC108 BC108A BC108B BC109 BC109B BC109C BC146/01 BC146/02 BC146/03 BC156 , ; variable capacitance TRANSISTOR; low power, audio frequency (Rt h j-mb > 15 K/W) TRANSISTOR; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR; low power, high frequency (Rth j-mb > 15 K/W) M
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smd npn 2n2222 tunnel diode BSR62 equivalent BF494 h parameters uhf amplifier design Transistor bf970 BC369 2PC1815L 2PC1815 7Z88986

TIS43

Abstract: BF257 Texas The Transistor and Diode Data Book for Design Engineers (Volume II) Northern European , Texas Instrum ents Lim ited THE TRANSISTOR AN D DIO DE D A T A BOOK VO LUME II Since 1954 when Texas Instruments introduced the first silicon transistor to the market place and later with the , Transistor and Diode Data Books for Design Engineers a useful addition to your Technical Library. CONTENTS TYPE NUMBER INDEX Page 7 GLOSSARY Page 13 TRANSISTOR SELECTION GUIDES Page
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TIS43 BF257 Texas equivalent of transistor bc214 BF195 equivalent is920 equivalent BF178 BS9300-C-738 BS9300-C-669 CV7671 BS9300-C-671 BS9300-C-670 V7672

Transistor 2N2905A

Abstract: BC237 Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , CHARACTERISTICS - MUN5311DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = , CHARACTERISTICS - MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC , TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE
ON Semiconductor
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Transistor 2N2905A BC237 applications of Transistor BC108 transistor equivalent 2n5551 transistor c-1000 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1

BC237

Abstract: transistor BC107 specifications MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor. QS may be written , . The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant
ON Semiconductor
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MPS3646 mps4123 opposite transistor equivalent book 2N5401 2n3819 equivalent transistor mps3646 equivalent 226AA MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1
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