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transistor BC107 specifications

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , NPN transistor in a TO-18; SOT18 metal package. PNP complements: BC177, BC178 and BC179. 2 3 , BC107 50 V BC108; BC109 - 30 V BC107 - 45 V BC108; BC109 - 20 V - 200 mA - 300 mW BC107 110 450 BC108 110 800 BC109 VCEO Philips Semiconductors
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TRANSISTOR bc108 BC107 Transistor application notes BC109c transistor Transistor BC107 BC109C Transistor BC109 MAM264 SCA54
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 2 3 MAM264 , PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC107 50 V - 30 V BC107 - 45 V BC108; BC109 - 20 V - 200 mA - 300 Philips Semiconductors
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TRANSISTOR DATASHEET BC107B TRANSISTOR bc107 current gain DATASHEET Transistor BC109 BC107 equivalent transistors symbol transistor BC108 DATASHEET Transistor BC107 SCA55
Abstract: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC (max) VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100 100 200 500 700 1000 3000 15000 V 45 20 40 25 40 30 60 60 (min/max) 110-450 110-800 100-300 50-300 50-250 40 min. 25 20 min. mW 300 300 350 300 5000 800 40W 115W -
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2N3055 TO220 NPN Transistor 2N3055 darlington tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 BC559 ZTX500 TIP122 TIP127
Abstract: 1N4148 Zener Diode STMicroelectronics VK05CFL Inductor Transistor PNP BC177 Transistor NPN BC107 , Rectifier Diode 1N4007 Diode 1N4148 Zener Diode STMicroelectronics VK05CFL Inductor Transistor PNP BC177 Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor Resistor VOGT , Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor VOGT electronic AG Resonant , Inductor Transistor PNP BC177 Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor STMicroelectronics
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BC107 BJT electronic ballast 11w 2 pin cfl lamp 1n4148 zener diode 11w 2 pin cfl tube circuit BJT based electronic ballast schematic BJT BC107 AN1694
Abstract: the emitter-base junction of a BC107 transistor, mounted with the element in the encapsulation. To , specifications are subject to change without notice. INFRARED DETECTORS A series of single-element , , D E V ELO PM EN T DATA This data sheet contains advance Information and specifications are subject , M401RPY J V INFRARED DETECTORS This infrared detector conforms to the specifications of the M -
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bc107 transistor
Abstract: -33-11 5 .6W II aew! IT Ko.p.n asw BC107 B ^ Q r ^ - C 110 asw 3 Pulses (rO'ÍBRlCEO i p , these tolerances. 6.6. Additional informations Preliminary specifications This heading indicates that , number. Example: BC 238 C Order-No. of Type Code for TO-92 Transistors Orientation of transistor on tape1 1 Additional marking for specials5 1 *i 06 *View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tepe s) Additional marking " 0 * : Taping without -
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E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T-33-II 0IN41 I3-75 T-33-11 15A3DIN
Abstract: BC109 BC179 BC178 BCY58 BCY78 BC478 BC479 2N930 BC107 BCY79 BCY59 BC177 2N3964 BFR17 , High Gain Transistor 1400 70 4.5 70 - - - - R.F. Amplifier 750 50 4 , Transistor 500 Package Page 500 2N3137 500 f 800 2N5109 30 » (MHz) 1000 , D U S T R Y STAN D AR D B1-12 BC100 BC107 BC108 BC109 S G S -T H O M S O N S G S -T H , BC184 BC394 BFY76 BFR17 BC140 BC160 BC394 BC107 87 199 129 49 57 BC185 BC186 BC187 -
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BC350 BSX19 equivalent BCW10 bcw17 BF294 BFV64 BC142 BC286 BC287 BC297 BC298 BC300
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor , Jun 04 Philips Semiconductors Product specification PNP general purpose transistor BC177 , switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 Fig.1 1 Simplified outline (TO , 2 MHz Philips Semiconductors Product specification PNP general purpose transistor Philips Semiconductors
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Transistor BC177 SOT-18 BC177 pnp transistor TRANSISTOR bc177b sot18 BC177B
Abstract: , BC107, ZTX451 or similar transistor capable of sinking 50mA continuous current normal isolated , °C to 70°C1 -55°C to 150°C . . . . . 300°C electrical specifications (measured at TA=25°C, at Newport
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NMF0505 bc107 smd BC107/bd138 smd NMF0512 NMF05 NMF12 NMF24 NMF48 NMF0512S
Abstract: =1 CTRL 4 5 1k TTL Input 0V 0V 2N2219, BC107, ZTX451 or similar transistor capable of , . . . 300°C electrical specifications (measured at TA=25°C, at nominal input voltage) Input Newport
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bc107 connections NMF0509 NMF0512/13 NMF0515 NMF1205 NMF1209 NMF1212
Abstract: 2N2907 2N6430 BCY57 CIL343 2N2369 2N2907A BC107 BCY58 CIL351 2N2369A 2N3117 , Transistor CSA1301 TIP2955 C5198 CSC3280 TIP3055 TO-3 Metal Can Package 2N3055 IRF820 , team invites request for device information and/or detailed specifications. We are constantly Continental Device India
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TRANSISTOR BC337 SMD transistor BC170 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A
Abstract: to +5.5 V, Internal Reference; CL = 100 pF, RL = 10 k to VDD and GND. All specifications TMIN to , release, not production tested. Specifications subject to change without notice. t1 t2 CS t3 , ; Internal V DD/2 Reference. All specifications TMIN to TMAX unless otherwise noted.) Parameter Limit , EXT REF VOUT VDD REF IN +5V VOUT 0.1uF GND 2N3904/ BC107 AD820/ OP295 , feedback loop of the amplifier include the BC107 and the 2N3904, which enable the current source to Analog Devices
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AD7801 RU-20 C2995 AD7801BRU equivalent transistor bc107 CS1515 Characteristic curve BC107
Abstract: 100 pF, RL = 10 k to VDD and GND. All specifications TMIN to TMAX unless otherwise noted , . Specifications subject to change without notice. t1 t2 CS t3 WR t4 t5 D7-D0 t6 t7 , CHARACTERISTICS1, 2 (VDD = +2.7 V to +5.5 V; GND = 0 V; Internal V DD/2 Reference. All specifications TMIN to , EXT REF VOUT VDD REF IN +5V VOUT 0.1uF GND 2N3904/ BC107 AD820/ OP295 , feedback loop of the amplifier include the BC107 and the 2N3904, which enable the current source to Analog Devices
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AD7801BR BC107 characteristic
Abstract: specifications TMIN to TMAX unless otherwise noted.) Units Bits LSB max LSB max LSB typ LSB typ uV/°C typ % FSR , product release, not production tested. Specifications subject to change without notice. t1 CS t2 , 15 4.5 20 20 20 (VDD = +2.7 V to +5.5 V; GND = 0 V; Internal V DD/2 Reference. All specifications , VIN 1k FAIL 1k PASS EXT REF VOUT GND 0.1uF REF IN VDD VOUT +5V AD820/ OP295 2N3904/ BC107 , transistors to place in the feedback loop of the amplifier include the BC107 and the 2N3904, which enable the Analog Devices
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Abstract: ASY28,9 ASY50 ASY54N.59N ASY63N ASY76 ASY77 ASY80 BC107,A,B BC108,A,B,C BC109,B,C BC146 , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes , transistor packages. It also restricts design freedom to those types available in SOT-23, 'matchstick', and , used in the prototypes as over-specification increases cost. If biasing a transistor from a , NPN Silicon Microminiature Plastic Transistor T yp e Characteristics @ T am b= 25 °C Colour -
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kt420 bc109 Transistor Equivalent list BCY70 BSY95A CV7002 diffused alloy
Abstract: and GND; Cl=100pF to GND; All specifications TMIN to TMAX unless otherwise noted.) Parameter B , , 2 All specifications TMIN to TMAX unless otherwise noted) Parameter Limit at TMIN, TMAX (B , with VDD =5V AD7303 1Y1 DIN GND 2N3904/ BC107 - SYNC 1Y2 SYNC 74HC139 , include the BC107 or the 2N3904 which enable the current source to operate from a min Vsource of 6V . The operating range is determined by the operating characteristics of the of the transistor. Suitable Analog Devices
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BC107 plastic transistor BC107 pin diagram bipolar transistor bc107 bc107 curves Transistor BC107 PLASTIC PACKAGE ad7830 16-BIT
Abstract: 25 BC375 n-p-n TO-92 var. 20 1000 800 25 BC376 May 1989 envelope BC107 , mentioned in this handbook. type number â² envelope BC107 BC108 BC109 BC140 BC141 n n n n , BC107 BC107A BC107B BC108 BC108A BC108B BC109 BC109B BC109C BC146/01 BC146/02 BC146/03 BC156 , ; variable capacitance TRANSISTOR; low power, audio frequency (Rt h j-mb > 15 K/W) TRANSISTOR; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR; low power, high frequency (Rth j-mb > 15 K/W) M -
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smd npn 2n2222 BC200 transistor bf 175 transistor bc547 PH in metal detector EQUIVALENT TRANSISTOR bc549c BSR62 equivalent 2PC1815L 2PC1815 7Z88986
Abstract: The Transistor and Diode Data Book for Design Engineers (Volume II) Northern European , Texas Instrum ents Lim ited THE TRANSISTOR AN D DIO DE D A T A BOOK VO LUME II Since 1954 when Texas Instruments introduced the first silicon transistor to the market place and later with the , Transistor and Diode Data Books for Design Engineers a useful addition to your Technical Library. CONTENTS TYPE NUMBER INDEX Page 7 GLOSSARY Page 13 TRANSISTOR SELECTION GUIDES Page -
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TIS43 equivalent of transistor bc214 BF257 Texas TIS61 TIS70 transistor bc 207 npn BS9300-C-738 BS9300-C-669 CV7671 BS9300-C-671 BS9300-C-670 V7672
Abstract: Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , CHARACTERISTICS - MUN5311DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = , CHARACTERISTICS - MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC , TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE ON Semiconductor
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Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor. QS may be written , . The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant ON Semiconductor
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MPS3646 mps4123 opposite 2n3819 equivalent transistor mps3646 equivalent transistor equivalent book 2N5401 226AA MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1
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