NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 M3D125 BC107; BC108 BC108; BC109 BC109 NPN general purpose , BC107; BC108 BC108; BC109 BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max. , 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177 BC177. 2 3 MAM264 MAM264 , PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC107 50 V - 30 V BC107 - 45 V BC108 BC108; BC109 BC109 - 20 V - 200 mA - 300 ... | Original |
8 pages, |
symbol transistor BC108 BC109c applications of Transistor BC108 BC107B transistor BC109 BC108B application note BC109B BC109B equivalent BC107 Transistor application notes EQUIVALENT TRANSISTOR bc108 BC107 DATASHEET DATASHEET Transistor BC107 M3D125 BC107 M3D125 abstract |
|
|||
| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 M3D125 BC107; BC108 BC108; BC109 BC109 NPN general purpose , BC107; BC108 BC108; BC109 BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max. , NPN transistor in a TO-18; SOT18 metal package. PNP complements: BC177 BC177, BC178 BC178 and BC179 BC179. 2 3 , BC107 50 V BC108 BC108; BC109 BC109 - 30 V BC107 - 45 V BC108 BC108; BC109 BC109 - 20 V - 200 mA - 300 mW BC107 110 450 BC108 BC108 110 800 BC109 BC109 VCEO ... | Original |
8 pages, |
BC109 BC107B BC107 Transistor application notes BC108B applications of Transistor BC108 transistor bc178 Transistor BC109 transistor BC107 specifications bc107 transistor TRANSISTOR bc107 current gain BC107A TRANSISTOR DATASHEET BC107B BC108 transistor M3D125 BC107 M3D125 abstract |
|
|||
| Abstract: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 BC108 2N3904 2N3904 ZTX300 ZTX300 2N3053 2N3053 BFY51 BFY51 TIP31A TIP31A 2N3055 2N3055 Case IC (max) VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100 100 200 500 700 1000 3000 15000 V 45 20 40 25 40 30 60 60 (min/max) 110-450 110-800 100-300 50-300 50-250 40 min. 25 20 min. mW 300 300 350 300 5000 800 40W 115W ... | Original |
1 pages, |
BC108 transistor 2N3055 2N3055 NPN Transistor transistor BC107 specifications applications of Transistor BC108 BC107 to92 Transistor BC107 PNP POWER TRANSISTOR TO220 2N3053 equivalent 2N3053 NPN transistor tip122 tip127 audio amp audio NPN BC107 BC108 BC107 abstract |
|
|||
| Abstract: 1N4148 1N4148 Zener Diode STMicroelectronics VK05CFL VK05CFL Inductor Transistor PNP BC177 BC177 Transistor NPN BC107 , Rectifier Diode 1N4007 1N4007 Diode 1N4148 1N4148 Zener Diode STMicroelectronics VK05CFL VK05CFL Inductor Transistor PNP BC177 BC177 Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor Resistor VOGT , Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor VOGT electronic AG Resonant , Inductor Transistor PNP BC177 BC177 Transistor NPN BC107 Fuse Resistor Resistor Resistor Resistor Resistor ... | Original |
18 pages, |
bridge rectifier using the diode 1N4007 11w cfl choke circuit diac 35v transistor BC107 general electric cfl transistor ballast 2 microfarad 400v capacitor Electronic ballast 11W BC177 transistor diac 30v 1n4148 zener diode 2.2 microfarad 400v ac capacitor AN1694 AN1694 abstract |
|
|||
| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 M3D125 BC177 BC177 PNP general purpose transistor , Jun 04 Philips Semiconductors Product specification PNP general purpose transistor BC177 BC177 , switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 MAM263 Fig.1 1 Simplified outline , transistor BC177 BC177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ... | Original |
8 pages, |
TRANSISTOR bc177b BC177B BC177A BC177 NPN transistor BC177 BC107 DATASHEET Transistor BC107 BC177 pnp transistor Transistor BC177 M3D125 M3D125 abstract |
|
|||
| Abstract: to 70°C1 -55°C to 150°C . . . . . 300°C electrical specifications (measured at TA=25°C, at , , TTL=0 6 NMF0512S NMF0512S Vout = 1.2V, TTL=1 CTRL 4 5 1k TTL Input 0V 0V 2N2219 2N2219, BC107, ZTX451 ZTX451 or similar transistor capable of sinking 50mA continuous current normal isolated regulated ... | Original |
9 pages, |
transistor BC107 NMF0512 NMF0505 bc107 smd datasheet abstract |
|
|||
| Abstract: 2N2907 2N2907 2N6430 2N6430 BCY57 BCY57 CIL343 CIL343 2N2369 2N2369 2N2907A 2N2907A BC107 BCY58 BCY58 CIL351 CIL351 2N2369A 2N2369A 2N3117 2N3117 , TO-3PN Leaded Plastic Power Package A1941 A1941 MOSFET MOS Field Effect Power Transistor CSA1301 CSA1301 , information and/or detailed specifications. We are constantly expanding our range of semiconductor devices ... | Original |
4 pages, |
bc237 equivalent SMD bc547 smd transistor BC547 smd transistor TO-92 bc108 bc109 smd TIP122 smd 2n2222a smt a1941 CDIL BD139 bc237 smd BC109 BC184 BC549 bc107 smd 2N2907A smt datasheet abstract |
|
|||
| Abstract: CTRL 4 5 1k TTL Input 0V 0V 2N2219 2N2219, BC107, ZTX451 ZTX451 or similar transistor capable of , . . . 300°C electrical specifications (measured at TA=25°C, at nominal input voltage) Input ... | Original |
9 pages, |
transistor BC107 bc107 smd bc107 connections bc107 datasheet abstract |
|
|||
| Abstract: to +5.5 V, Internal Reference; CL = 100 pF, RL = 10 k to VDD and GND. All specifications TMIN to , release, not production tested. Specifications subject to change without notice. t1 t2 CS t3 , ; Internal V DD/2 Reference. All specifications TMIN to TMAX unless otherwise noted.) Parameter Limit , REF IN +5V VOUT 0.1uF GND 2N3904/ 2N3904/ BC107 AD820/ AD820/ OP295 OP295 AD7801 AD7801 +5V 10 F 0.1 F , include the BC107 and the 2N3904 2N3904, which enable the current source to operate from a minimum VSOURCE of 6 ... | Original |
16 pages, |
transistor BC107 pin diagram RU-20 equivalent transistor bc107 AD7801BRU AD7801BR AD7801 TRANSISTOR bc107 current gain AD7801 abstract |
|
|||
| Abstract: 100 pF, RL = 10 k to VDD and GND. All specifications TMIN to TMAX unless otherwise noted. , Specifications subject to change without notice. t1 t2 CS t3 WR t4 t5 D7-D0 t6 t7 , CHARACTERISTICS1, 2 (VDD = +2.7 V to +5.5 V; GND = 0 V; Internal V DD/2 Reference. All specifications TMIN to , REF IN +5V VOUT 0.1uF GND 2N3904/ 2N3904/ BC107 AD820/ AD820/ OP295 OP295 AD7801 AD7801 +5V 10 F 0.1 F , include the BC107 and the 2N3904 2N3904, which enable the current source to operate from a minimum VSOURCE of 6 ... | Original |
17 pages, |
transistor BC107 specifications RU-20 Characteristic curve BC107 AD7801BRU AD7801BR AD7801 AD7801BR abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| Datasheet LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS BC107 BC108 BC108 BC108 BC108 Text Format BC107 BC108 BC108 BC108 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 BC108 BC108 BC108 are silicon complemet for BC107 is BC177 BC177 BC177 BC177. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC107 BC108 BC108 BC108 BC108 V CBO Collector-Base Voltage (I E = 0) 50 30 V V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3298-v3.htm |
STMicroelectronics | 25/05/2000 | 7.93 Kb | HTM | 3298-v3.htm |
| The BC107 and BC108 BC108 BC108 BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS BC107 BC108 BC108 BC108 BC108 Document Format 3298 11/11/1997 6 Raw Text Format BC107 BC108 BC108 BC108 BC108 LOW circuits of television reveivers. The PNP complemet for BC107 is BC177 BC177 BC177 BC177. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC107 BC108 BC108 BC108 BC108 V CBO www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3298.htm |
STMicroelectronics | 20/10/2000 | 8.49 Kb | HTM | 3298.htm |
| Format BC107 BC108 BC108 BC108 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 BC108 BC108 BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They ST | LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS BC107 BC108 BC108 BC108 BC108 LOW NOISE GENERAL PURPOSE of television reveivers. The PNP complemet for BC107 is BC177 BC177 BC177 BC177. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC107 BC108 BC108 BC108 BC108 V CBO Collector www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3298-v2.htm |
STMicroelectronics | 14/06/1999 | 6.1 Kb | HTM | 3298-v2.htm |
| Format BC107 BC108 BC108 BC108 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 BC108 BC108 BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They ST | LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS BC107 BC108 BC108 BC108 BC108 LOW NOISE GENERAL PURPOSE of television reveivers. The PNP complemet for BC107 is BC177 BC177 BC177 BC177. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC107 BC108 BC108 BC108 BC108 V CBO Collector www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3298-v1.htm |
STMicroelectronics | 02/04/1999 | 6.14 Kb | HTM | 3298-v1.htm |
| epitaxial PNP transistors in TO-18 metal case. It is suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The NPN complement is BC107 . Specifications mentioned in this publication are subject to change without notice. This publication supersedes www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3305-v3.htm |
STMicroelectronics | 25/05/2000 | 6.71 Kb | HTM | 3305-v3.htm |
| . The NPN complement is BC107. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS The BC177 BC177 BC177 BC177 is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3305-v1.htm |
STMicroelectronics | 02/04/1999 | 4.93 Kb | HTM | 3305-v1.htm |
| complement is BC107. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for use in implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3305.htm |
STMicroelectronics | 20/10/2000 | 7.08 Kb | HTM | 3305.htm |
| . The NPN complement is BC107. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS The BC177 BC177 BC177 BC177 is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3305-v2.htm |
STMicroelectronics | 14/06/1999 | 4.89 Kb | HTM | 3305-v2.htm |
| voltage transistors hFE max >40 6 1 0 /catalog/parametrics/14.html Parametrics SA636DK SA636DK SA636DK SA636DK Voltage Low 20 7 1 0 /catalog/parametrics/15.html Parametrics PH2369 PH2369 PH2369 PH2369 Ptot max mW 500 Category Transistors fT min max V 15 Ptot max mW 250 Category Single switching transistors fT min MHz 13 1 0 /catalog Transistors in SC-88 SC-88 SC-88 SC-88 QTR1 = QTR2 NPN .MODEL QTR1 NPN + IS = 1.822E-14 822E-14 822E-14 822E-14 + NF = 0.9932 109 1 0 /models/bc846t_847 0 /models/bc847bpn_3.html Model : BC847BPN BC847BPN BC847BPN BC847BPN 3 BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN Complementary NPN and PNP Transistors www.datasheetarchive.com/files/philips/search/docindex-v2.txt |
Philips | 14/02/2002 | 998.47 Kb | TXT | docindex-v2.txt |
| 1 1 0 /catalog/appnotes/15106.html Applicationnotes for Bipolar power transistors Title Date FS072 FS072 FS072 FS072: Horizontal Deflection for 17 64kHz monitors - BU4522AF/AX BU4522AF/AX BU4522AF/AX BU4522AF/AX 1998-04-14 FS078 FS078 FS078 FS078: Horizontal deflection transistors BUJ100 BUJ100 BUJ100 BUJ100: Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all transistors for 17, 70 kHz monitors 4 1 0 /catalog/appnotes/15613.html Applicationnotes for RF wideband transistors Title Date PAGER: Preamplifier for pager applications 1P9GHZ3: Power Amplifier for 1.9 GHz at 3 V www.datasheetarchive.com/files/philips/search/docindex.txt |
Philips | 25/04/2003 | 954.24 Kb | TXT | docindex.txt |