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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor BC 552

Catalog Datasheet MFG & Type PDF Document Tags

transistor BC 552

Abstract: 320 265v OTHER SPECIFICATIONS TEMPERATURE CHARACTERISTICS Curie Point AR: 120°C BC: 90°C BA: 110°C BD: 80°C BB , AR 220 TEMPERATURE CHARACTERISTICS Curie Point AR: 120°C BA: 110°C BB: 100°C BC: 90°C BD: 80°C BE , 105 BD BB AS AN BC AR AP AM AK 104 BG AH AG AF AE AD AB AC APPLICATION CIRCUIT Transformer , ) POSISTOR Rate of Resistance Change (R/R25°C) 103 Transistor protection circuit RB RL POSISTOR , 60 Ambient Temperature (°C) Protective threshold current 10­1 T ­50 552 CG01-J Rev. 1
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transistor BC 552 320 265v PTH8L Thermistor PTC 265V TRANSISTOR BC 553 265V PTC PTH8L07T102M2A550 PTH8L07T222M2A550 PTH8L07T472M2A550 PTH8L07T103M2A550

transistor BC 552

Abstract: TRANSISTOR BC 157 . During positive discharge, due to the properties of integ-ation, a grounded collector PNP transistor , transistor, Vce being greater than Vcc. If T is the total discharge duration, energy dissipated in the , Material Copyrighted By Its Respective Manufacturer ESM1600B INPUT «lus CURRENT 5 £ â u BC EC 3 U , "I U» 7121537 00L703b 552 SGS-THOMSON liaCäFffilills® l'LÌ.iMCC«3 9/10 This Material
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ESM1600BFP TRANSISTOR BC 157 DIP14 7T2T237 00L703

WJ-A87-1

Abstract: transistor BC 552 ) DIA. B.C 0-018 2'flnJ(0.46 +0-02} DIA. fml -°0 5 ± 005 (.13) U N L E S S O TH E RW ISE SP EC , .062 .145 .212 .264 .301 .320 .329 .321 .312 .331 .415 .552 S22 ANG 121 114 118 -112 -124 -140 -156 , Vdc Therm al Resistance 0jc .18 5°C /W Transistor Power
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WJ-CA87-1 WJ-A87-1 wj-a87 101S12 SMA87 BC L 5857 A87-1 SMA87-1 1-800-WJ1-4401

PTH8L14ar3r3m

Abstract: PTH60 TEMPERATURE CHARACTERISTICS Curie Point AR: 120°C BC: 90°C BA: 110°C BD: 80°C BB: 100°C RESISTANCE VALUE (3 , RESISTANCE­TEMPERATURE CHARACTERISTICS 105 BD BB AS AN BC AR AP AM AK 104 BG Rate of Resistance Change (R/R25°C) AH AG , RL POSISTOR Power Source C Transistor protection circuit Fluorescent lamp protection circuit , operating current 0 -10 0 10 20 30 40 50 60 Ambient Temperature (°C) Protective threshold current 552
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PTH8L14ar3r3m PTH60 PTH63 transistor BD 110 PTH8L04AR130H2B550 PTH8L07BD220N3B550

FT500BH

Abstract: transistor D313 -120 HVIGBT (High Voltage Insulated Gate Bipolar Transistor Modules) CM800HA-34H CM1200HA-34H CM600DY , 10000 0500 7 9HVIGBT HA High Voltage Insulated Gate Bipolar Transistor Modules , 10HVIGBT HB High Voltage Insulated Gate Bipolar Transistor Modules Cu baseplate , Voltage Insulated Gate Bipolar Transistor Modules AISiC AISiC baseplate , 57±0.25 55.2 61.5 11.85 38 LABEL CM5 5 38 5 13 CM6 CM600E2Y
Mitsubishi
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SR100L-10S SR252AM-40S SR202AH-50R FR1000BX FT500BH FT1000AU transistor D313 FG1000AH FD500DH transistor PNP A124 GTO gate drive unit mitsubishi SR60L-10S SR60L-10R SR100L-10R SR130L-10S SR130L-10R

TRANSISTOR BC 748

Abstract: FSD - 1378 B circuit Users' circuit Non-voltage contact or NPN open-collector transistor or Safety relay unit , open-collector transistor or U-shaped side mounting intermediate supporting bracket (Note 1) Used for , DC15 % Ripple P-P 10 % or less NPN open-collector transistor PNP open-collector transistor · Maximum sink current: 200 mA · Maximum source current: 200 mA · , received is stable) NPN open-collector transistor PNP
SUNX
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SF2-AH20 SF2-AH28 SF2-AH32 SF2-AA18 SF2-AA48 TRANSISTOR BC 748 FSD - 1378 B h48 diode fsd 0165 k4-24v SF2-AH12 SF2-AH16 SF2-AH24

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 *BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page *BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 *BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 *BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO-39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140
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catalogue des transistors bipolaires de puissance brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 3154-S

PCR 406 J transistor

Abstract: transistor PCR 406 HM data . ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES , 5 OIA MIL-s-19500/341B 3.5 w. ttte transistor The following marking .sPcci[ied in MIL-S-19500 at (he op4ion of the manufacturer: may bc omitted from the body of (a) Country of , PROVLWONS 4.1 %mplin~ and inspection. and as specified herein. Sampling and inspection shaff bc in , examination Conditions for pulse measurement and test sbaff bc as specified in shall h as
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2N3553 2N3375 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j W0/341A 2N3315 TX2N337S TX2N3553

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM IC O N PLANAR NPN AUDIO DRIVER BC 115 The BC115 is a silicon planar epitaxial NPN transistor , IC O N PLANAR PNP GENERAL PURPOSE TRANSISTOR BC 116A The BC116A is a silicon planar epitaxial , mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier , transistor in a. Jedec TO-72 metal case. It is designed for use in AG C prestages up to 260 MHz. ABSOLUTE , F 139 is a germanium mesa PNP transistor in a Je d e c TO-72 metal case. It is particularly designed
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APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM AF106

3866S

Abstract: BF247 equivalent ) C ata lo g u e 183 T2 184T2 185T2 BC 107 ec 108 BC BC BC BC BC 109 140 141 160 161 TPu 75 TPu , 849 367 367 367 373 373 379 379 385 385 391 391 395 395 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 635 BC 636 BC 637 BC 638 BC 639 BC 640 BCW 29 BCW 30 BCW 31 BCW 32 BCW , 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 BC 177 BC 178 BC 179 BC 182 BC 183 BC 184 BC190A, B BC 211 BC 211 A BC 212 BC 213 BC 214 BC 215 B BC 237 BC 238 BC 239 BC 264
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3866S BF247 equivalent Triac GK transistor bc 564 TI Small Signal FET Catalogue BC547E SP309

transistor bc 564

Abstract: TRANSISTOR 131-6 BJ 946 419 BB 515 BB 619 BC 516 MPSA 63 MPSA 64 BC 516 BC 517 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 618 BCX 58 BCX 59 BCX 78 BCX 79 BCX 73 BCX 74 BCX 75 BCX 76 BC 327 BC 328 BCX 22 BCX 23 MPS 2222 MPS 2222 A MPS 2907 MPS 2907 A 2N 4126 , 27 BC 846 bC b4/ BC 848 BC 849 BC 850 BC 856 BC 857 BC 858 BC 859 BC 860 BCV 47 BCW 60 BCX 70 BCW 61 BCX 71 BCW 65 BCW 66 BCW 67 BCW 68 BC 807 BC 808 BCX 41 BCX 42 SMBT 2222
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TRANSISTOR 131-6 BJ 946 transistor Bc 949 datenblatt TRANSISTOR BC 545 DIODE smd marking 22-16 DATASHEET TRANSISTOR BC 545 TRANSISTOR SMD MARKING CODE bc ru B132-H6450-X-X-7400 B3-B3789 B3789-X-X-7600 B123- B6253-X-X-7600 B132-B6483-X-X-7400

8XC552

Abstract: 80C51-based Philips Semiconductors 80C51 -Based 8-Bit Microcontrollers 80C51 Family Derivatives 8XC 552/562 , Philips Semiconductors 80C51 -Based 8-Bit Microcontrollers 80C51 Family Derivatives 8X C 552/562 , AC ESO EC ECMO BC PSO FC PCMO ADC4 C4 CMSR4 B4 TO A4 A12 94 T2 84 AD4 WLE D4 RS1 AB ET1 EB ECT3 BB , -Bit Microcontrollers 80C51 Family Derivatives 8XC 552/562 overview Table 1. SYMBOL PWMP# PWM1# PWMO# RTE# SP , Semiconductors 80C51-Based 8-Bit Microcontrollers 80C51 Family Derivatives 8XC 552/562 overview 7 TM2C0N
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8XC552 80C51-based 12MH2 80C51-B 8XC552/562 83C552 87C552 80C552

nec tokin oe 128

Abstract: NEC emma2 63 6.2 6. FET:Field Effect Transistor J-FETMIS FET G S- D FET G S-D , Transistor) J-FETJunction FET- - MOS FET P N - (3) PN 2 PNPN X18437JJ2V0IF 69 6.2 6. PNP NPN (Thyratron Transistor) N P SCR (Silicon Controlled Rectifier) 2 SCR , .550 .551 1 VDD0 VSS0 .551 VSS VDD .551 .551 10k .551 1.2.21 .552 .552 88 X18437JJ2V0IF 1. XT1 GND .552 .552 1.2.22 .552 XT1 .552 LSI
NEC
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X18437JJ3V0IF00 nec tokin oe 128 NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 IMT-2000FOMA 10BASE2/5/-T 100BASE-T 100BASE-TX100BASE-T4100BASE-FX 1000BASE-X

TIS43

Abstract: BF257 Texas The Transistor and Diode Data Book for Design Engineers (Volume II) Northern European , Texas Instrum ents Lim ited THE TRANSISTOR AN D DIO DE D A T A BOOK VO LUME II Since 1954 when Texas Instruments introduced the first silicon transistor to the market place and later with the , Transistor and Diode Data Books for Design Engineers a useful addition to your Technical Library. CONTENTS TYPE NUMBER INDEX Page 7 GLOSSARY Page 13 TRANSISTOR SELECTION GUIDES Page
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TIS43 BF257 Texas equivalent of transistor bc214 BF195 equivalent is920 equivalent BF178 BS9300-C-738 BS9300-C-669 CV7671 BS9300-C-671 BS9300-C-670 V7672

Power Semiconductor Applications Philips Semiconductors

Abstract: schematic diagram induction bearing heater , variable speed wipers: front rear 60-100 5-8 headlamp 1 1 452/453 552/553 , using 2 or 4 switches 552 2 washers: front 1-2 30-60 2.5-5 rear 1-2 window lifter 25-120 2-10 2-4 reversible 4 452/455 552/555 sun-roof 40-100 3.5-8 1 reversible 4 452/453 552/553 50 4 4-16 reversible 4 453 553 , reversible 4 453 553 radio aerial 25 2 1 reversible 4 452 552 12-36
Philips Semiconductors
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Power Semiconductor Applications Philips Semiconductors schematic diagram induction bearing heater BUK854-500IS philips schematic induction cookers

germanium

Abstract: KPL 3009 0 8 Transistor Data Tables 4 BC 178 P+ 1 3 4 5 6 7 8 9 10 11 Type M n fr. Ma PI Gb , 100 4 ,1 9 ,2 0 ,2 2 ) ,k p l. B C 3 3 7 P Transistor Data Tables 6 BC 328+ 4 Typo M n fr .  , J J field-effect transistor ^ m J transistor l MOS field-effect transistor / Type num ber , * A raw material germanium B raw material silicon second letter C transistor for applications in AF range (Rlh >15° C/W) JC D power transistor for applications in AF range (FtlhJC 15° C/W) < F RF
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germanium KPL 3009 BLY34 AF339 ADY20 bf197 C9/C10

AC125K

Abstract: 6AN7 4 EAA91 (UAF 42) EAA91 EBC41 EBC41 EA BC 80 EC C 82 EC C 83 EC C 81 (EY 86) (EBF 80) (EBF 89) ECH 42
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A741PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram 72741N 72747N 72748N 7B131N 76149N 1709C

GFB7400D

Abstract: EF184 R BC W 69R , 70 R BCW71 R, 72R BCX17 to 20 BCX21 BCX31 to 34 8C X 35 to 37 BCY30 to 34 BCY38 , Quadruple 2 -in p u t N A N D gate w ith open c o lle cto r o u tp u t transistor GFB7403D D 3403A , Sextuple s in g le -in p u t inverter gate open c o lle cto r o u tp u t transistor G FB 7405S1D D
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GFB7400D EF184 Rifa pmr 2026 ITT A2610 Mullard Mullard quick reference guide RIFA 0,022 pme 285 250v

ELECTRONIC BALLAST DIAGRAM 28w

Abstract: 28W ELECTRONIC BALLAST 2 LAMP SCHEMATIC Opto Isolator Programmable Unijunction Transistor N-MOSFET Bridge Rectifier Diode 9 10 11 , BC Components 2222 338 14104 18 1 Panasonic-ECG ECU-V1H103KBM 19 2 , ERJ-P08J105V 52 2 BC Components 53 1 Panasonic-ECG 5073NW1R500J12A FXBC ERJ-P08J433V , around the programmable unijunction transistor Q1, generates an approximate ramp waveform across , opto-isolator diode current should be chosen to be as low as possible to guarantee saturation of the transistor
International Rectifier
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ELECTRONIC BALLAST DIAGRAM 28w 28W ELECTRONIC BALLAST 2 LAMP SCHEMATIC IR2158 electronic ballast for T5 28w transistor electronic ballast for T5 CAPACITOR 10U 16V IRS2158D 90-305V

isl 6251 schematic

Abstract: smd transistor A4S ) hFE = 10 Siemens Aktiengesellschaft 293 PNP Silicon Darlington Transistor BC 516 High , f (VEB, VCB) Siemens Aktiengesellschaft 321 NPN Silicon Darlington Transistor BC 517 , Transistors BC 257 . BC 259 High current gain q Low collector-emitter saturation voltage q Complementary types: BC 167, BC 168, BC 169 (NPN) q 1 3 2 Type Marking Ordering Code BC 257 BC 257 A BC 257 B BC 258 BC 258 A BC 258 B BC 258 C BC 259 BC 259 B BC 259 C ­
Siemens
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isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Q62702-A772 Q62702-A731 Q62702-A773
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