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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor BC 307

Catalog Datasheet MFG & Type PDF Document Tags

transistor BC 308

Abstract: transistor sc 308 MPN SILICON TRANSISTOR, EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain , Rth(j-a) 420 °C/W ffhe transistor BC 307 is grouped in two classes of small signal current gain VI , , .e BC 309 est prévu pour les étages d'entrée i aibie bruit. ( -45 V BC 307 VCEO < -25 V BC 308
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catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres -39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140 cl. 16 TO-39 750 40 100-250 100 1 1000/100 50 307 BC 141 cl .6 TO-39 750 60 40-100 100 1 1000/100 50 307 BC 141 cl.10 TO-39 750 60 60-160 100 1 1000/100 50 307 BC 141 cl.16 TO-39 750 60 100-250 100 1 1000/100 50 307 *BC 182 F 139 B 300 50 100-480 2 0,6 100/5 280 § 327 BC 183 F 139 B 300 , -150 150 353 *BC 307 VI F 139 B 300 -45 75*-150* -2 -0,95 100/5 200 § 367 *BC
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TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 BC 547 BC 307 BC 557 MMMMfaAi * ' i" ' BC 337 BC 327 BC 635 BC 636 60 V BCW 96 BCW 97 BCW 91 BC , BC 213 BC 213 A BC 213 B BC 213 C BC 214 BC 214 B BC 214 C BC 307 BC 307 VI BC 307 A BC 307 B BC 308 BC 308 VI BC 308 A BC 308 B BC 308 C BC 309 BC 309 VI BC 309 A BC 309 B BC , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf , 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548
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bc 357 transistor datasheet

Abstract: bc 309 b transistor Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309 , PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package , TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package , Notes BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package Disclaimer The
Continental Device India
Original
Abstract: SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic , EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package , TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package , of 5 Notes BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package Continental Device India
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BC 114 transistor

Abstract: bc 357 transistor pin details SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic , BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , 0.3 0.7 V V V V V Page 2 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C , 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package , Notes BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package Disclaimer The
Continental Device India
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BF298

Abstract: BC 458 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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transistor bf 422 NPN

Abstract: transistors BC 548 BC 558 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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639 TRANSISTOR PNP

Abstract: transistor ESM 692 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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Bc 140 transistor

Abstract: TRANSISTOR BC 141 NPN SILICON TRANSISTOR BC 140 TRANSISTOR NPN SILICIUM gQ >| Compl. of BC 160 and BC 161 - Switching and amplifier Commutation et amplification "CEO "21E i 40 V (60 V BC 140 BC 141 1 A 40 . , 175 °C 76 - 07 1/6 307 BC 140, BC 141 STATIC CHARACTERISTICS t ,_-25°C (Unless otherwise statec , indications contraires! BC 140 BC 141 Collector-base voltage Tension coltectevr-base vcb0 80 100 V , ° v(br)ces BC 140 80 \ BC 141 100 Collector-emitter breakdown voltage Tantion de claquage
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transistor Bc 540

Abstract: transistor BC 341-6 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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transistor Bc 540

Abstract: TRANSISTOR BC 135 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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3866S

Abstract: BF247 equivalent , A BC 307 BC 308 BC 309 BC 313 BC 313 A BC 327 BC 328 BC 337 BC 338 BC 413 BC 414 BC 415 BC 416 , 50 50 50 50 50 280 § 280 § 280 s 307 307 307 307 307 307 327 327 327 BC 140 c l.10 TO-39 BC 140 , 0 40-300 -1 5 0 150 *B C 307 VI *B C 307 A BC 308 VI BC 308 A BC 308 B BC 309 A BC 309 B , ) C ata lo g u e 183 T2 184T2 185T2 BC 107 ec 108 BC BC BC BC BC 109 140 141 160 161 TPu 75 TPu 75 TPu 75 297 297 297 307 307 313 313 319 319 319 327 327 327 333 341 341 347 347 347 353 357 357 357
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3866S BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 TI Small Signal FET Catalogue SP309

transistor BC 310

Abstract: transistor bc 487 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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transistor BC 310 transistor bc 487 transistor BC 321 bc 337-25 transistor TRANSISTOR BC 416 b pnp TRANSISTOR BC 415 BCW94 CB-76 BC317P

BC 148 TRANSISTOR

Abstract: DIODE ga . ¿135010 UL >64/2 RADUGA 730 IS: K 155 L I )1 TB-Gerät Transistor 8342113 U 2405 S BC 413 B/C BC 149 B/G 8302130 8 332 128 BC 148 B 8382120 BC 148 C 8343042 3C 107 A 8322138 BC 147 B/C Diode AAP 155 3442029 BYP 401/100 6432035 Z-Di-ode BZP 611 D5V6 Eiode BYP 401-50 8462024 Autosuper Transistor Safari B I ? 214 8353003 3 3 2 2 10 1 BC 108 C 8372110 BC 160 EI ? 215 8313004 Diode 8442029 /AP 155 Diodenoaar 6452030 AAP 153 Stabilisator 2x BAP 661 Theriaistor 47 R 8475254 Diode 8452014 EAP 661 Transistor Auto633216
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6D22S BC 148 TRANSISTOR DIODE ga transistor BC-148 transistor bc 148 bc 147 B transistor service-mitteilungen 350AF-S
Abstract: SIEM ENS PNP Silicon Darlington Transistor BC 516 â'¢ High current gain â'¢ High collector current â'¢ Complementary type: BC 517 (NPN) Type Marking Ordering Code Pin Configuration 1 2 3 BC 516 - Q62702-C944 C B Package1 ) E TO-92 Maximum Ratings , fl535bQ5 0120521 4M B 1998-11-01 SIEMENS BC 516 Electrical Characteristics at 7a = 25 â'C , SIEMENS BC 516 Total power dissipation Pm =/(7a; 7c) Collector cutoff current / c b o = /(7a) ^ -
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Q12D553 Q1E05E4

transistor bc 488

Abstract: transistor bc 557 c 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR BC 550 b TRANSISTOR C 557 B transistor BC 490

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" TRANSISTORS 49. BC 307 45 50 5 110/480 2 5 200 300 .05 25 150 â'" â'" â'" TO 92 50. BC 307A , 1000 1 .5 130 NPN OUTPUT TRANSISTOR 78 BC 368 20 25 5 85/375 500 1 2000 1000 .1 .5 , typ typ 37. BC 337-40 45 50 5 250/600 100 1 1000 625 .1 .7 100 10 â'" â'" TO 92 38. BC 338 25 30 5 100/600 100 1 1000 625 .1 .7 100 10 â'" â'" 39. BC 338-16 25 30 5 100/250 100 1 iono 625 .1 .7 100 10 â'" â'" 40. BC 338-25 25 30 5 160/400 100 1 1000 625 .1 .7 100 10 â'" â'" 41. BC 338-40 25 30
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TRANSISTOR 237b TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C 237B TRANSISTOR bc 238c transistor 143S3T BC238B

TRANSISTOR BC 384

Abstract: bc 357 transistor -18 400 600 30 40 270 50 5 1 300 80+ 7 â'" BC 307 P TO-92F 300 100 45 70 450* 2 5 0.3 10 100 6 10 BC 308 , ) 'c ImA) BC 251 P TO-92F 300 100 45 125 900 A * 2 5 0.3 10 80 6 10 BC 262 P TO-92F 300 100 25 125 900 At 2 5 0.3 10 80 6 10 BC 253 P TO-92F 300 100 25 125 900â² 1 2 5 0.3 10 80 6 4 BC 256 P TO-92F 300 100 64 125 5001 2 5 0.5 100 130+ 6 10 BC 257 P TO-92B 300 100 45 70 450* 2 5 0.3 10 130 6 10 BC 258 P TO-92B 300 100 25 70 800» 2 5 0.3 10 130 6 10 BC 259 P TO-92B 300 100 20 200 800« 2 5 0.3 10
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TRANSISTOR BC 384 bc 357 transistor transistor BC 336 TRANSISTOR BC 413 bc 357 transistor pin TRANSISTOR BC 256 MELF-005 MT-12 S40/S-

transistor BC 555

Abstract: 2950 transistor 1-99 100-999 1000-Up 670-1115 LCM-S01601DSF 80.00 ¥36.00 ¥12.70 66.00 ¥16.00 3.07 ¥6.56 0.55 ¥0.75 , ¥70.00 ¥12.70 72.00 ¥40.00 128 ¥64 0.48 ¥0.48 41.46 38.05 35.62 670-1125 LCM-S320240GWF/B-C* 167.10 , OCP-PCT114/E 60~600 Single Photo Transistor One .29 670-2002 OCP-PCT124/E 60~600 Bi-polar Photo Transistor One .36 670-2003 OCP-PCT218/E 60~600 Single Photo Transistor Two .61 670-2004 OCP-PCT228/A 60~600 Bi-polar Photo Transistor Two .61 670-2005 OCP-PCT4116/E 60~600 Single Photo Transistor Four 1.64 670-2006
Allied Electronics Catalog
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LCM-S01604DSF LCM-S12864GSF transistor BC 555 2950 transistor TRANSISTOR 1243 TRANSISTOR a 1270 bipolar BC transistor 1000-U LCM-S01602DSF/A LCM-S01602DSF/B LCM-S02002DSF LCM-S02004DSF
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