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ISL9016IRUCCZ-T Intersil Corporation 150mA Dual LDO with Low Noise, High PSRR, and Low IQ; uTDFN6; Temp Range: -40° to 85°C
ISL9016IRUCWZ-T Intersil Corporation 150mA Dual LDO with Low Noise, High PSRR, and Low IQ; uTDFN6; Temp Range: -40° to 85°C
ISL9016IRUJBZ-T Intersil Corporation 150mA Dual LDO with Low Noise, High PSRR, and Low IQ; uTDFN6; Temp Range: -40° to 85°C
ISL9016IRUFBZ-T Intersil Corporation 150mA Dual LDO with Low Noise, High PSRR, and Low IQ; uTDFN6; Temp Range: -40° to 85°C
ISL9016IRUNWZ-T Intersil Corporation 150mA Dual LDO with Low Noise, High PSRR, and Low IQ; uTDFN6; Temp Range: -40° to 85°C
ISL9016IRUJJZ-T Intersil Corporation 150mA Dual LDO with Low Noise, High PSRR, and Low IQ; uTDFN6; Temp Range: -40° to 85°C

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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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transistor 9016 npn

Catalog Datasheet MFG & Type PDF Document Tags
Abstract:  V7*. KM 9000 SERIES AM FM RADIO TRANSISTOR KIT SELECT ION GUIDE FOR AM FM RADIO TRANSISTOR KIT AM RECEIVER FM RECEIVER W FM RF KM 9016 Conv. IF) IF 2 KM90II KM 90H KM 9011 AF Amp. kmhom or KM90I5 Output KM 9012 KM 9013 SP. , NPN AUDIO DRIVER KM 9015 PNP AUDIO DRIVER KM 9016 NPN FM RF KM 9018 NPN AM/FM IF, FM CONVERTER , KM90I4 KM9015 Oulpul KM90I:.' SP. -Q KM90i:i type polarity applications case KM 9011 NPN AM/FM IF -
OCR Scan
CP1005 9011 9012 9013 9014 9018 C 9014 transistor 9011 transistor transistor 9014 C npn 9016 KM901I/8 KM90II/8
Abstract: r-t-1 fr AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl loo CL 9018 NPN AM/FM IF, FM CONVERTER V N«â'"â'¢ J MICRO ELECTRONICS LTD , 0.5 10 1 50 120 1 5 3.5 6 10 2? CL 9016 25 20 3 300 28 198 50 18 0.72 0.85 1 5 0.14 0.5 10 1 500 800 -
OCR Scan
transistor c 9018 Transistor CL 100 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor
Abstract: s Lì >J à .-« j&lA CL9000 SERIES AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM/FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C , 007 0.5 10 1 50 120 1 5 3.5 6 10 2? CL 9016 25 20 3 300 28 198 50 18 0.72 0.85 1 5 0.14 0.5 10 1 500 -
OCR Scan
9011 NPN transistor npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013
Abstract: Vi4». ¡;-i\> V IliÌ Vi- i m B bJ ;7*y V7l_l IlkaW AM. FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT TYPE POLARITY APPLICATIONS CASE KM 9011 NPN AM/FM IF, AM CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO DRIVER KM 901S PNP AUDIO DRIVER KM 9016 NPN FM RF KM 9018 NPN AM/FM IF, FM CONVERTER MICRO , ^-GROUP TYPE A B C D E F G H 1 @ IC ! VC KM 9011 KM 9016 KM 9018 - 28 - 45 39 - 60 54-80 72-108 97 - -
OCR Scan
9014 ch transistor npn c 9014 100-10L 9018 9013 pnp 9012 pnp transistor
Abstract: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base , , acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9016 Semtech Electronics
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97 G transistor ic 9016 npn hFE is transistor st 9016
Abstract: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base , Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9016 Characteristics at Tamb=25 OC Semtech Electronics
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Abstract: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base , Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 9016 Characteristics at Tamb=25 OC Semtech Electronics
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Abstract: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9016 Semtech Electronics
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transistor 9016 H 9016 9016 NPN transistor st9016
Abstract: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A , . Collector 2. Base 3. Emitter Page 1 31/05/05 V1.0 MPSA14 NPN Darlington Transistor Absolute , Cycle = 2% *ft = hfe ·ftest. Page 2 31/05/05 V1.0 MPSA14 NPN Darlington Transistor , Package Type Part Number 60 30 0.5 20 TO-92 NPN MPSA14 Page 3 31/05/05 V1.0 MPSA14 NPN Darlington Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell InOne Multicomp
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transistor 7333
Abstract: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in , NPN Dimensions 39.96 19.28 22.23 NPN Silicon C 7.96 9.28 Power Transistor , 31/05/05 V1.0 2N3442 High Power Industrial Transistor Thermal Characteristics Characteristic , 31/05/05 V1.0 2N3442 High Power Industrial Transistor Active-Region Safe Operating Area (SOA) There are two limitations on the power handling ability of a IC, Collector Current (AMP) transistor Multicomp
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transistor 2n3442
Abstract: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear , -3 NPN 2N3772 Page 4 31/05/05 V1.0 2N3772 High Power Transistor Notes: International , Maximum NPN 2N3772 A 38.75 39.96 20 Ampere B 19.28 22.23 NPN Silicon Power Transistor C 12.19 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 , A 31/05/05 V1.0 2N3772 High Power Transistor Thermal Characteristics Characteristic Multicomp
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high power transistor Transistor 358 to3 2N3772 APPLICATIONS 2N3772A 358 transistor transistor 358 to-3
Abstract: BC237B General Purpose Transistor NPN General Description: · General Purpose NPN Silicon Planar , . Collector Page 1 31/05/05 V1.0 BC237B General Purpose Transistor NPN Parameter Symbol , .0 BC237B General Purpose Transistor NPN Electrical Characteristics Continued (Ta = 25°C unless specified , Dimensions : Millimetres (Unless Specified) Page 3 31/05/05 V1.0 BC237B General Purpose Transistor NPN Notes: International Sales Offices: AUSTRALIA ­ Farnell InOne FINLAND ­ Farnell InOne Multicomp
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TRANSISTOR BC237b BC237
Abstract: MPSA06 NPN Silicon Transistor Feature: · General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 , 2. Base 3. Emitter Page 1 31/05/05 V1.0 MPSA06 NPN Silicon Transistor Absolute Maximum , .0 MPSA06 NPN Silicon Transistor Specifications VCEO (V) VCBO maximum (V) IC (A) hFE , -92 MPSA06 Page 3 31/05/05 V1.0 MPSA06 NPN Silicon Transistor Notes: International Sales Multicomp
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7333 A transistor MPSA06
Abstract: BF199 NPN Silicon Transistor Feature: · NPN Silicon Planar Epitaxial RF Transistor. TO , : 1. Base 2. Emitter 3. Collector Page 1 13/05/08 V1.1 BF199 NPN Silicon Transistor , .1 BF199 NPN Silicon Transistor Specifications IC Maximum (A) VCEO Maximum (V) VCBO Maximum , .1 BF199 NPN Silicon Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell FINLAND ­ , Fax No: + 44 870 1200 209 Fax No: + 353 1 830 9016 export 800 463 9275 EXPORT ­ Farnell Multicomp
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bf199 equivalent bF199 transistor transistor Common Base configuration ic 9400 03 transistor data bf199
Abstract: MPSA06 NPN Silicon Transistor Feature: · General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 , 2. Base 3. Emitter Page 1 13/05/08 V1.1 MPSA06 NPN Silicon Transistor Absolute Maximum , .1 MPSA06 NPN Silicon Transistor Specifications VCEO (V) VCBO Maximum (V) IC (A) hFE , -92 MPSA06 Page 3 13/05/08 V1.1 MPSA06 NPN Silicon Transistor Notes: International Sales Multicomp
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TO-92 CASE MPSA06 MPSa06 equivalent MPSA06 transistor
Abstract: BF199 NPN Silicon Transistor Features: · NPN Silicon Planar Epitaxial RF Transistor. TO , : 1. Base 2. Emitter 3. Collector Page 1 31/05/05 V1.0 BF199 NPN Silicon Transistor , NPN Silicon Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell InOne FINLAND ­ , V Dynamic Characteristics Transition Frequency Page 2 dB 31/05/05 V1.0 BF199 NPN Silicon Transistor Specifications IC maximum (A) VCEO maximum (V) VCBO maximum (V) Ptot Multicomp
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BF199 RF transistor NPN BF199
Abstract: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A , : 1. Collector 2. Base 3. Emitter Page 1 11/05/08 V1.1 MPSA14 NPN Darlington Transistor , Page 3 11/05/08 V1.1 MPSA14 NPN Darlington Transistor Notes: International Sales Offices , = 300us, Duty Cycle = 2% *ft = |hfe| ·ftest. Page 2 11/05/08 V1.1 MPSA14 NPN Darlington Transistor Specifications VCEO Maximum (V) VCBO Maximum (V) IC (av) Maximum (A) hFE Minimum Multicomp
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farnell Darlington transistor to 92 Darlington transistor
Abstract: BC237B General Purpose Transistor NPN Description: · General purpose NPN silicon planar , 3. Collector Page 1 10/05/08 V1.1 BC237B General Purpose Transistor NPN Parameter , 10/05/08 V1.1 BC237B General Purpose Transistor NPN Electrical Characteristics Continued (Ta = , 350 TO-92 BC237B Page 3 10/05/08 V1.1 BC237B General Purpose Transistor NPN Notes , + 353 1 830 9277 + 44 870 1200 208 Fax No: + 44 870 1200 209 Fax No: + 353 1 830 9016 Multicomp
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malaysia IC TRANSISTOR C 460 358 IC
Abstract: MJE13005 Power Transistor Switchmode Series NPN Power Transistors are designed for use in , IC = 2.0A. VCEO(sus) = 400V. VCE(sat) = 1.0V (Maximum) at IC = 4.0A, IB = 1.0A. NPN , 1 31/05/05 V1.0 MJE13005 Power Transistor Maximum Ratings Characteristic Symbol , Transistor Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol , 300us, Duty Cycle 2.0% Page 3 31/05/05 V1.0 MJE13005 Power Transistor DC Current Gain Multicomp
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MJE-13005 MJE130 transistor mje13005 8805 VOLTAGE REGULATOR circuit based on MJE13005 MJE13005 TRANSISTOR
Abstract: at IC = 20A. NPN Dimensions 39.96 19.28 22.23 C 7.96 9.28 Power Transistor , 2N5038 Power Transistor Fast switching speeds and high current capacity ideally suit these parts , Ampere NPN Silicon TO-3 Dimensions : Millimetres Maximum Ratings Characteristic Symbol , Page 1 150 Unit V A 31/05/05 V1.0 2N5038 Power Transistor Thermal Characteristics , V1.0 2N5038 Power Transistor Active-Region Safe Operating Area (SOA) There are two limitations Multicomp
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20A npn
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