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ISL97649AIRZ Intersil Corporation TFT-LCD Supply + DCP + VCOM Amplifier + Gate Pulse Modulator + RESET; QFN28; Temp Range: -40° to 85°C visit Intersil Buy
ISL97649AIRZ-T Intersil Corporation TFT-LCD Supply + DCP + VCOM Amplifier + Gate Pulse Modulator + RESET; QFN28; Temp Range: -40° to 85°C visit Intersil Buy
ISL97649AIRZ-TR5566 Intersil Corporation TFT-LCD Supply + DCP + VCOM Amplifier + Gate Pulse Modulator + RESET; QFN28; Temp Range: -40° to 85°C visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

transistor 649A

Catalog Datasheet MFG & Type PDF Document Tags

transistor 649A

Abstract: H649A PNP SILICON TRANSISTOR 649A 4 100mm A117AJ-00 240±20µm 1170×1170µm 2 B 272×192µm 2E 226×298µm 2 2SB649AHS649AH649A Ta=25 TO-126TO-126ML Tj-. 150 PC-Tc=25. 20W PC-TA=25.1W VCBO-.-180V VCEO-.-160V V EBO -.-5V IC
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transistor 649A H649A 649a HS649A transistor 160v 1.5a pnp H649

transistor 649A

Abstract: H649A PNP SILICON TRANSISTOR 649A 4 100mm A080BJ-00 240±20µm 800×800µm 2 B 124×124µm 2E 221×110µm 2 2SB649AHS649AH649A TO-126TO-126ML Ta=25 Tj-. 150 PC-Tc=25. 20W PC-TA=25.1W VCBO-.-180V VCEO-.-160V V EBO -.-5V IC
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2SB649A

2sd649

Abstract: transistor 649A JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 123 V 2SB649A 2. COLLECTOR Units -160 , 100-200 160-320 60-120 100-200 Typical Characteristics 2SB649,649A Jiangsu Changjiang
Jiangsu Changjiang Electronics Technology
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2sd649 2SD649 2SD649A
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. BASE MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics Jiangsu Changjiang Electronics Technology
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2Sd649A

Abstract: transistor 649A JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO-126C FEATURES Power amplifier applications MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter Value VCBO VCEO Units -180 Collector-Base Voltage 1. EMITTER V 2. COLLECTOR Collector-Emitter Voltage 3. BASE 2SB649 , Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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transistor 649A

Abstract: 2SB649 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics Technology
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Abstract: TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO Collector-Base Voltage VCEO 3. BASE 123 Collector-Emitter , 2SB649,649A Bytes Bytes
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SB649A
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 123 V 2SB649A 2. COLLECTOR Units -160 , 100-200 60-120 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Jiangsu Changjiang Electronics Technology
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transistor 649A

Abstract: 649A JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics Technology
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transistor 2sb649 JIANGSU CHANGJIANG TO-126 TO 126 FEATURES
Abstract: Current Storage Temperature Range A Device Marking WTM649A=649A ELECTRICAL CHARACTERISTICS(TA , ) (V) VCE = -5V Ta=75˚C 300 Collector to emiter saturation voltage DC Current Transistor Weitron
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500TYP

transistor 649A

Abstract: WTM649A Current Storage Temperature Range A Device Marking WTM649A=649A ELECTRICAL CHARACTERISTICS(TA , Collector to emiter saturation voltage DC Current Transistor Ratio hFE 350 -3 -10 -30 -100
Weitron
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101B

AD811A

Abstract: ±5 V ±15 V POWER SUPPLY Operating Range Quiescent Current TRANSISTOR COUNT ±2.9  , (%) 0.08 35 OUTPUT VOLTAGE (V p-p) 0.07 0.20 RF = 649â"¦ 0.18 FC = 3.58MHz 100 IRE , ±15V VS = ±5V 0.1 GAIN = â'"2 RFB = 649â"¦ 0.01 10k 100k 1M 10M 00866-E-015 18 , '"60 AD811 Data Sheet 100 100 80 RF = 649â"¦ AV = +2 INVERTING CURRENT VS = ±5V TO  , Packages 25 110 649â"¦ VIN 649â"¦ VS = ±15V VOUT 20 OUTPUT VOLTAGE (V p-p) 100 90
Analog Devices
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AD811A 00866-E-001 00866-E-002 RW-16 00866-E-003 AD811SQ/883B AD811SE/883B
Abstract: ' â'"0.2 700 TPC 10. â'"3 dB Bandwidth vs. RF RF = 649â' â'"0.1 600 VALUE OF , '" Hz TPC 13. Frequency Response, G = +1 â'"40 0 RF = 649â' â'"50 â'"1 DISTORTION , . Frequency 100 1 RF = 576â' 0 â'"1 10 10 NONINVERTING CURRENT VS = Ø5V RF = 649â , FREQUENCY â'" Hz 1G TPC 34. PSRR vs. Frequency 1 RF = 549â' 0 â'"1 RF = 649â' OUTPUT â , '"0.1 RIN = 1 / g M ≠50 â"¦ â'"0.2 OUTPUT â'" dB G = 1+ RF = 649â' 0 R1 G = +2 â Analog Devices
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AD8001 MS-012AA MO-178AA C01043

AD811

Abstract: AD811A ±5 V ±15 V POWER SUPPLY Operating Range Quiescent Current TRANSISTOR COUNT ±2.9  , (%) 0.08 35 OUTPUT VOLTAGE (V p-p) 0.07 0.20 RF = 649â"¦ 0.18 FC = 3.58MHz 100 IRE , ±15V VS = ±5V 0.1 GAIN = â'"2 RFB = 649â"¦ 0.01 10k 100k 1M 10M 00866-E-015 18 , '"60 AD811 Data Sheet 100 100 80 RF = 649â"¦ AV = +2 INVERTING CURRENT VS = ±5V TO  , Packages 25 110 649â"¦ VIN 649â"¦ VS = ±15V VOUT 20 OUTPUT VOLTAGE (V p-p) 100 90
Analog Devices
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AD811ACHIPS AD811SCHIPS E-20-1 D00866-0-2/14

transistor 307A

Abstract: LTE42012R TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency , allowing an easier design of wideband circuits â'¢ New 5 GHz technology The transistor is housed in a , Manufacturer N AMER PHILIPS/DISCRETE Microwave linear power transistor ObE D â  bLSBTBl 0014171 S , ° 4.0 0.64/142° 0.088/13.2° 0.98/ -55.8° 0.82/147.0° 4.1 0.64/142° 0.084/ 9.7° 0.95/ -64.9° 0.85 , Microwave linear power transistor OLE D â  L(353^31 DDIMIÃI â¡ â  LTÃ'42012R T-33-05- APPLICATION
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OCR Scan
LTE42012R transistor 307A 5j12 T-32-O FO-41B
Abstract: Current Short Circuit Current 67 Max VS = +3 V to +30 V 70 TRANSISTOR COUNT 80 0.3 , = 357â' 60 RF = 154â' 50 RF = 649â' 40 30 20 RF = 357â' 80 70 RF = 154â' 60 RF = 649â' 50 40 30 10 20 0 0 2 4 6 8 10 12 14 SUPPLY VOLTAGE â , ' 90 80 PEAKING Õ 0.2dB 70 60 50 RF = 357â' 70 60 RF = 154â' RF = 649â' 50 40 , . Closed-Loop Gain and Phase vs. Frequency, Circuit of Figure 53 649â' C3 30␮F â'"90 GAIN Analog Devices
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AD812 C1859

616A TRANSISTOR

Abstract: 2sD586A - 5 - FOR USE BY ELECTRICIANS OVERSEAS : HBrhSliSIXSIftlSK (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. m m m m (Ta~25'o â'¢ « / Vf  , 140 * 4.5 160 2SD668A 13 > r ') " 649A » « â'¢i â'"180 - 5 -1.5A 1 W 150 -10 -160 60-320 - 5 -150
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OCR Scan
2SD877 2SD736A 616A TRANSISTOR 2sD586A transistor 669A transistor 669A 649A 2SD674A 2SD874A 2SB502A 2SD586A 2SD738A
Abstract: Ratio Input Offset Voltage -Input Current +Input Current Vs â'"+3 V to +30 V 70 TRANSISTOR , value of 8 kQ is recommended for R2. 649!» F ig u re 54. C lo s e d -L o o p G ain a n d Phase vs. Frequency, C irc u it o f F ig u re 53 649!» -VW F R E Q U E N C Y -M H z -wv- C 0 UT 4 -
OCR Scan

transistor 649A

Abstract: : 67.6°C 4: 64.9°C 5: 65.6°C Figure 19. Top Side - Thermal Scan SNOA559B â'" October 2011 â , current is to be sourced through Q1, then the transistor will need to be sized appropriately to handle
Texas Instruments
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AN-2127 LM3448 SNOSB51 ISO/TS16949
Abstract: fSW - 600 - kHz Max Duty Duty 90 95 - % SW Transistor ON Resistor Ronn - 0.5 - SW Transistor Leak Current IqSW - 0.1 2.0 A Icoil - , current flows the current detection resistor that is connected to between internal switching transistor , ON time of switching transistor = Ton Ipeak = (VIN / L) × (1 / fsw) × (1-(VIN / VOUT) Iave=(VOUT , VOUT SW PWM RESET 140 R2 6.8kâ"¦ EN FB R1 22kâ"¦ ISET GND RFB 6.49â ROHM
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BD60A00NUX BD60A60NUX
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