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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor 649A

Catalog Datasheet MFG & Type PDF Document Tags

transistor 649A

Abstract: H649A PNP SILICON TRANSISTOR 649A 4 100mm A117AJ-00 240±20µm 1170×1170µm 2 B 272×192µm 2E 226×298µm 2 2SB649AHS649AH649A Ta=25 TO-126TO-126ML Tj-. 150 PC-Tc=25. 20W PC-TA=25.1W VCBO-.-180V VCEO-.-160V V EBO -.-5V IC
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transistor 649A H649A 649a HS649A transistor 160v 1.5a pnp H649

transistor 649A

Abstract: H649A PNP SILICON TRANSISTOR 649A 4 100mm A080BJ-00 240±20µm 800×800µm 2 B 124×124µm 2E 221×110µm 2 2SB649AHS649AH649A TO-126TO-126ML Ta=25 Tj-. 150 PC-Tc=25. 20W PC-TA=25.1W VCBO-.-180V VCEO-.-160V V EBO -.-5V IC
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2SB649A

2sd649

Abstract: transistor 649A JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 123 V 2SB649A 2. COLLECTOR Units -160 , 100-200 160-320 60-120 100-200 Typical Characteristics 2SB649,649A Jiangsu Changjiang
Jiangsu Changjiang Electronics Technology
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2sd649 2SD649 2SD649A
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. BASE MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics Jiangsu Changjiang Electronics Technology
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2Sd649A

Abstract: transistor 649A JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO-126C FEATURES Power amplifier applications MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter Value VCBO VCEO Units -180 Collector-Base Voltage 1. EMITTER V 2. COLLECTOR Collector-Emitter Voltage 3. BASE 2SB649 , Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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transistor 649A

Abstract: 2SB649 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics Technology
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Abstract: TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO Collector-Base Voltage VCEO 3. BASE 123 Collector-Emitter , 2SB649,649A Bytes Bytes
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SB649A

transistor 649A

Abstract: 649A JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 V 2SB649A 2. COLLECTOR Units -160 VCBO , 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics Technology
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transistor 2sb649 JIANGSU CHANGJIANG TO-126 TO 126 FEATURES
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value -180 V 2SB649 -120 123 V 2SB649A 2. COLLECTOR Units -160 , 100-200 60-120 100-200 D 160-320 Typical Characteristics 2SB649,649A Jiangsu Jiangsu Changjiang Electronics Technology
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transistor H 649A

Abstract: Current Storage Temperature Range A Device Marking WTM649A=649A ELECTRICAL CHARACTERISTICS(TA , ) (V) VCE = -5V Ta=75˚C 300 Collector to emiter saturation voltage DC Current Transistor
Weitron
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transistor H 649A 500TYP

transistor 649A

Abstract: WTM649A Current Storage Temperature Range A Device Marking WTM649A=649A ELECTRICAL CHARACTERISTICS(TA , Collector to emiter saturation voltage DC Current Transistor Ratio hFE 350 -3 -10 -30 -100
Weitron
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101B

AD811A

Abstract: ±5 V ±15 V POWER SUPPLY Operating Range Quiescent Current TRANSISTOR COUNT ±2.9  , (%) 0.08 35 OUTPUT VOLTAGE (V p-p) 0.07 0.20 RF = 649â"¦ 0.18 FC = 3.58MHz 100 IRE , ±15V VS = ±5V 0.1 GAIN = â'"2 RFB = 649â"¦ 0.01 10k 100k 1M 10M 00866-E-015 18 , '"60 AD811 Data Sheet 100 100 80 RF = 649â"¦ AV = +2 INVERTING CURRENT VS = ±5V TO  , Packages 25 110 649â"¦ VIN 649â"¦ VS = ±15V VOUT 20 OUTPUT VOLTAGE (V p-p) 100 90
Analog Devices
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AD811A 00866-E-001 00866-E-002 RW-16 00866-E-003 AD811SQ/883B AD811SE/883B
Abstract: ' â'"0.2 700 TPC 10. â'"3 dB Bandwidth vs. RF RF = 649â' â'"0.1 600 VALUE OF , '" Hz TPC 13. Frequency Response, G = +1 â'"40 0 RF = 649â' â'"50 â'"1 DISTORTION , . Frequency 100 1 RF = 576â' 0 â'"1 10 10 NONINVERTING CURRENT VS = Ø5V RF = 649â , FREQUENCY â'" Hz 1G TPC 34. PSRR vs. Frequency 1 RF = 549â' 0 â'"1 RF = 649â' OUTPUT â , '"0.1 RIN = 1 / g M ≠50 â"¦ â'"0.2 OUTPUT â'" dB G = 1+ RF = 649â' 0 R1 G = +2 â Analog Devices
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AD8001 MS-012AA MO-178AA C01043

AD811

Abstract: AD811A ±5 V ±15 V POWER SUPPLY Operating Range Quiescent Current TRANSISTOR COUNT ±2.9  , (%) 0.08 35 OUTPUT VOLTAGE (V p-p) 0.07 0.20 RF = 649â"¦ 0.18 FC = 3.58MHz 100 IRE , ±15V VS = ±5V 0.1 GAIN = â'"2 RFB = 649â"¦ 0.01 10k 100k 1M 10M 00866-E-015 18 , '"60 AD811 Data Sheet 100 100 80 RF = 649â"¦ AV = +2 INVERTING CURRENT VS = ±5V TO  , Packages 25 110 649â"¦ VIN 649â"¦ VS = ±15V VOUT 20 OUTPUT VOLTAGE (V p-p) 100 90
Analog Devices
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AD811ACHIPS AD811SCHIPS E-20-1 D00866-0-2/14

transistor 307A

Abstract: LTE42012R TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency , allowing an easier design of wideband circuits â'¢ New 5 GHz technology The transistor is housed in a , Manufacturer N AMER PHILIPS/DISCRETE Microwave linear power transistor ObE D â  bLSBTBl 0014171 S , ° 4.0 0.64/142° 0.088/13.2° 0.98/ -55.8° 0.82/147.0° 4.1 0.64/142° 0.084/ 9.7° 0.95/ -64.9° 0.85 , Microwave linear power transistor OLE D â  L(353^31 DDIMIÃI â¡ â  LTÃ'42012R T-33-05- APPLICATION
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OCR Scan
LTE42012R transistor 307A 5j12 T-32-O FO-41B
Abstract: Current Short Circuit Current 67 Max VS = +3 V to +30 V 70 TRANSISTOR COUNT 80 0.3 , = 357â' 60 RF = 154â' 50 RF = 649â' 40 30 20 RF = 357â' 80 70 RF = 154â' 60 RF = 649â' 50 40 30 10 20 0 0 2 4 6 8 10 12 14 SUPPLY VOLTAGE â , ' 90 80 PEAKING Õ 0.2dB 70 60 50 RF = 357â' 70 60 RF = 154â' RF = 649â' 50 40 , . Closed-Loop Gain and Phase vs. Frequency, Circuit of Figure 53 649â' C3 30␮F â'"90 GAIN Analog Devices
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AD812 C1859

616A TRANSISTOR

Abstract: 2sD586A - 5 - FOR USE BY ELECTRICIANS OVERSEAS : HBrhSliSIXSIftlSK (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. m m m m (Ta~25'o â'¢ « / Vf  , 140 * 4.5 160 2SD668A 13 > r ') " 649A » « â'¢i â'"180 - 5 -1.5A 1 W 150 -10 -160 60-320 - 5 -150
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OCR Scan
2SD877 2SD736A 616A TRANSISTOR 2sD586A transistor 669A transistor 669A 649A 2SD674A 2SD874A 2SB502A 2SD586A 2SD738A
Abstract: Ratio Input Offset Voltage -Input Current +Input Current Vs â'"+3 V to +30 V 70 TRANSISTOR , value of 8 kQ is recommended for R2. 649!» F ig u re 54. C lo s e d -L o o p G ain a n d Phase vs. Frequency, C irc u it o f F ig u re 53 649!» -VW F R E Q U E N C Y -M H z -wv- C 0 UT 4 -
OCR Scan

transistor 649A

Abstract: : 67.6°C 4: 64.9°C 5: 65.6°C Figure 19. Top Side - Thermal Scan SNOA559B â'" October 2011 â , current is to be sourced through Q1, then the transistor will need to be sized appropriately to handle
Texas Instruments
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AN-2127 LM3448 SNOSB51 ISO/TS16949
Abstract: fSW - 600 - kHz Max Duty Duty 90 95 - % SW Transistor ON Resistor Ronn - 0.5 - SW Transistor Leak Current IqSW - 0.1 2.0 A Icoil - , current flows the current detection resistor that is connected to between internal switching transistor , ON time of switching transistor = Ton Ipeak = (VIN / L) × (1 / fsw) × (1-(VIN / VOUT) Iave=(VOUT , VOUT SW PWM RESET 140 R2 6.8kâ"¦ EN FB R1 22kâ"¦ ISET GND RFB 6.49â ROHM
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BD60A00NUX BD60A60NUX
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