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transistor 2n3772

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2n3772

Abstract: 2N3772 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER , INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 ELECTRICAL CHARACTERISTICS TC
INCHANGE Semiconductor
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transistor 2n3772

transistor 2n3772

Abstract: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package Designed , of 4 NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL , Rate 60 cps. Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO-3 Metal Can , of 4 Notes 2N3772 TO-3 Metal Can Package Disclaimer The product information and the
Continental Device India
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C-120 2N3772R 080202E

2N3772

Abstract: Transys Electronics L I M I T E D 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage , 4.0 2.2 UNITS V V V mA mA mA mA V V NPN SILICON PLANAR POWER TRANSISTOR 2N3772 , Test: Pulse Width
Transys Electronics
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vcb 60 veb 4 ic 10a metal can

Abstract: transistor 2n3772 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear , NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC , , Repetitive Rate 60 cps. µ Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO , Data Sheet Page 3 of 4 2N3772 Notes TO-3 Metal Can Package Disclaimer The product
Continental Device India
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vcb 60 veb 4 ic 10a metal can

transistor 2n3772

Abstract: 2N3772 PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless , Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass , Rate 60 cps. µ Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO , Data Sheet Page 3 of 4 2N3772 Notes TO-3 Metal Can Package Disclaimer The product
Continental Device India
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2N3772 APPLICATIONS
Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear , NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC , , Repetitive Rate 60 cps. Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO , Data Sheet Page 3 of 4 2N3772 Notes TO-3 Metal Can Package Disclaimer The product Continental Device India
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Abstract: '" 2N3772 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS â'˜ MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit C o lle cto r-E m itte r Voltage VCEO 40 , Watts W /°C T j, TSfg - 6 5 to + 200 °C Symbol 2N3771, 2N3772 Unit 0JC 1.17 , â'˜ C o lle cto r-E m itte r Sustaining Voltage (1) (I q = 0.2 Adc, lB = 0) 2N3771 2N3772 V , 100 Ohms) 2N3771 2N3772 V cE X (su s) C ollector-E m itter Sustaining Voltage (I q = 0.2 -
OCR Scan
2N3771/D 2N37712N3772

2N3771

Abstract: 2n3772 3.75 2.5 Adc _ - 2 Motorola Bipolar Power Transistor Device Data 2N3771 2N3772 0.02 , Bipolar Power Transistor Device Data 3 2N3771 2N3772 100 50 VCC = 30 V _ IC /lB = 10 lB1 - lB2 T , -204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N3771 2N3772 M otorola , Vdc - 2N3771 = 2.5 Adc @ V q e = 60 Vdc - 2N3772 2N 3771* 2N 3772 'Motorola Preferred Device , CEO VCEX VCB V EB 2N3771 40 50 50 5.0 30 30 7.5 15 150 0.855 2N3772 60 80 100 7.0 20 30 5.0 15
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OCR Scan
LB2T 2N3771 power circuit motorola 2n3771

2N3772 motorola

Abstract: 1N5825 Bipolar Power Transistor Device Data 5 2N3771 2N3772 Motorola reserves the right to make changes , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 Preferred , . Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , _C Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Thermal Resistance, Junction to Case , 3.75 Adc @ VCE = 40 Vdc - 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772 20 and 30 AMPERE POWER
Motorola
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2N3772 motorola 1N5825 2N6257 MSD6100

2n3772

Abstract: 2N3771 power circuit , series pass regulators, and inductive switching applications. 2N3771* 2N3772 *ON Semiconductor , ÎÎÎ IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Rating Symbol VCEO , VOLTS 150 WATTS 2N3771 40 50 50 2N3772 60 80 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter , THERMAL CHARACTERISTICS Characteristics Symbol JC 2N3771, 2N3772 1.17 Unit Thermal Resistance , Sustaining Voltage (1) (IC = 0.2 Adc, IB = 0) 2N3771 2N3772 2N3771 2N3772 VCEO(sus) VCEX(sus) 40 60 50 80 45
ON Semiconductor
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3771- IC

Abstract: 2N3772 motorola - 2N3772 'MAXIM UM RATINGS Rating Collector-Emltter Voltage Collector-Emitter Voltage , 30 7.5 15 150 0.855 2N3772 60 80 100 7.0 20 30 5.0 15 Unit Vdc Vdc Vdc Vdc Adc Ib Adc , choices for future use and beat overall value. REV 7 Motorola Bipolar Power Transistor Device Data , b e * 5 -0 Vdc, lc - 0) (V B E - 7.0 Vdc, lc - 0) 2N3771 2N3772 IC B O 2N3771 2N3772 lE B O 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 VC E O (su s) 40 60 50 80 45 70 - Symbol Min Max Unit
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OCR Scan
3771- IC

2N3772

Abstract: 1N5825 .1 1165892 Maximum Ratings (Note 1) Rating Symbol 2N3772 Collector-Emitter Voltage VCEO , Collector-Emitter Sustaining Voltage (Note 2 and 3) (lC = 0.2 A dc, lB = 0) 2N3772 VEO (sus) 60 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, VEB (off) = 1.5 V dc, RBE = 100) 2N3772 VCEX (sus) 80 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, RBE = 100) 2N3772 VCER (sus) 70 - Collector Cut off Current (Note 2) (VCE = 50V dc, IB = 0 ) (VCE = 25V dc, IB = 0 ) 2N3772
Multicomp
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2N3772

Abstract: 2N3771 ~ 2N3772 MAXIMUM RATINGS FIGURE -1 POWER DERATING 150 Ã' £ 125 I 1 100 I 75 to !2 S 50 5 o 0 , , TEMPERATI!RE(°C) NPN 2N3771 2N3772 Characteristic Symbol 2N3771 2N3772 Unit Collector-Emitter Voltage VCEO , G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3771, 2N3772 NPN , CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N3771 2N3772 ^ceo(sus) 40 , 2N3772 ^cex(sus) 50 80 V Collector Cutoff Current (VCE = 30V, lB = 0) (VCE = 50V, lB = 0) 2N3771 2N3772
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OCR Scan
2N3771 power transistor S200 203-CA

2N3772

Abstract: 2N3771 . "b = 4 0 A - 2n3772 MAXIMUM RATINGS Corp. FIGURE -1 POWER DERATING 150 125 100 75 50 25 0 , 2N3772 Characteristic Symbol 2N3771 2N3772 Unit Collector-Emitter Voltage VCEO 40 60 V , 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 http://www.bocasemi.com 2N3771, 2N3772 , ) 2N3771 2N3772 ^ceo(sus) 40 60 V Collector - Emitter Sustaining Voltage (lc = 0.2 A, VBE(off) = 1.5 V, Rbe = 100 Ohms) 2N3771 2N3772 ^cex(sus) 50 80 V Collector Cutoff Current (VCE = 30V, lB = 0) (VCE =
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OCR Scan

high power transistor

Abstract: transistor 7333 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear , A 31/05/05 V1.0 2N3772 High Power Transistor Thermal Characteristics Characteristic , .0 2N3772 High Power Transistor Specifications IC(av) maximum (A) VCEO maximum (v) hFE minimum , -3 NPN 2N3772 Page 4 31/05/05 V1.0 2N3772 High Power Transistor Notes: International , Maximum NPN 2N3772 A 38.75 39.96 20 Ampere B 19.28 22.23 NPN Silicon Power
Multicomp
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high power transistor transistor 7333 Transistor 358 to3 358 transistor transistor 358 to-3 transistor 928

2N3772

Abstract: 2N3771 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 , 2N3772 Unit Collector-Emitter Voltage Rating VCEO 40 60 Vdc Collector-Emitter , Country of Origin ORDERING INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping , ) 2N3772 IS/b Adc SECOND BREAKDOWN *DYNAMIC CHARACTERISTICS (Note 2) Collector-Emitter
ON Semiconductor
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2N3771

Abstract: 2N3771 power circuit ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , = 2.5 Adc @ VCE = 60 Vdc - 2N3772 These devices are available in Pb-free package(s). , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit , , 2N3772 Unit Thermal Resistance, Junction to Case JC 1.17 _C/W Operating and Storage , Publication Order Number: 2N3771/D 2N3771 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125
ON Semiconductor
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Power Transistor 2N3771 transistor 2N3771

1N5825

Abstract: 2N3771 ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , = 2.5 Adc @ VCE = 60 Vdc - 2N3772 ÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Operating and Storage Junction Temperature , 2N3772 (VCE = 60 Vdc) IS/b Adc SECOND BREAKDOWN *DYNAMIC CHARACTERISTICS Base­Emitter On
ON Semiconductor
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Abstract: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , Adc @ VCE = 40 Vdc â' 2N3771 = 2.5 Adc @ VCE = 60 Vdc â' 2N3772 Pbâ'Free Packages are Available , MAXIMUM RATINGS (Note 1) Symbol 2N3771 2N3772 Unit Collectorâ'Emitter Voltage Rating , INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping TOâ'204 100 Units / Tray , 40 Vdc) 2N3771 (VCE = 60 Vdc) 2N3772 IS/b Adc SECOND BREAKDOWN *DYNAMIC ON Semiconductor
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2N3772

Abstract: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 518 Devices Qualified Level 2N3771 JANTX JANTXV 2N3772 MAXIMUM RATINGS Ratings Symbol @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 2N3771 2N3772 Unit , ) Characteristics Symbol Min. Max. Unit 2N3771 2N3772 V(BR)CEO 40 60 Vdc 2N3771 2N3772 V(BR)CER 45 70 Vdc 2N3771 2N3772 V(BR)CEX 50 90 Vdc 2N3771 2N3772 ICEO
Microsemi
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