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Part Manufacturer Description Datasheet BUY
2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2906A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA visit Digikey Buy
2N2906AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey Buy
2N2906AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
JANTXV2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
JAN2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy

transistor 2n2906

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2n2906

Abstract: 2N2906 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 · Low Power · Hermetic TO-18 Metal package. · Ideally suited for High Speed Switching and General Purpose Applications · Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO , Number 8078 Issue 2 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 ELECTRICAL , PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31
Semelab
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transistor 2n2906 LE17 100MH
Abstract: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 â'¢ Low Power â'¢ Hermetic TO-18 Metal package. â'¢ Ideally suited for High Speed Switching and General Purpose Applications â'¢ Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO , Number 8078 Issue 2 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 ELECTRICAL , PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 Semelab
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2N2907

Abstract: 2n2907 TRANSISTOR PNP ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2906, A 2N2907, A PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2906, A, 2N2907, A , =150mA, lB1=lB2=15mA 100 100 ns (Continued on Reverse Side) R3 2N2906, A and 2N2907.A PNP SILICON TRANSISTOR , ©JA ©JC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 2N2906 2N2907 -65 to +200 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600
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2n2907 TRANSISTOR PNP 2N2907 TRANSISTOR 2N2907 a TRANSISTOR LG 631 IC 2N2907 PNP Transistor J 2N2906 JEDECTO-18

2N2906

Abstract: 2N2907 TRANSISTOR -sn- ti J 2N2906 2N2907 These transistors are silicon planar epitaxial pnp devices conforming to , and general purpose applications. QUICK REFERENCE DATA 2N2906 2N2907 VCBOmax- 60V VCEOmax- 40V , GENERAL PURPOSE 2N2906 SMALL SIGNAL TRANSISTORS 2N2907 I I T-3N- »V Electrical , transfer ratio Vce - 10V, lc = 0.1mA and Tamb = 255C 2N2906 20 2N2907 35 Vce = 10V, lc = 1.0mA and Tamb = 25°c 2N2906 25 2N2907 50 Vce = 10V, lc = 10mA and Tarnb = 25Â
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transistor t3n ledex 2N2907 PNP Transistor to 92 transistor 2n2907 T31N PNP 2N2907 SO-132A C7/B11 Q7G13 07D13 0GDQ12E T-31-

2N2907

Abstract: 2n2907a 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2906 2N2907 SYMBOL TEST CONDITIONS MIN MAX , V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP
Central Semiconductor
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2N2907A PNP Transistor

2n390g

Abstract: 2N390G TRANSISTOR SPRRGUE TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors , into printed wiring boards. TYPICAL RATINGS (Max.) Power Dissipation, PD (each transistor , 400 150 2N2906 TPQ2907 60 40 5 50 100 â'" 150 10 200 8.0 400 150 2N2907 TPQ3798 60 40 5 10 150 â , '" 150 10 200 8.0 400 150 2N2221/2N2906 TPQ6002 60 30 5 30 100 â'" 150 10 200 8.0 400 150 2N2222/2N2907
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TPQ3724 2N3724 TPQ3725 TPQ3725A 2N3799 TPQ6502 2n390g 2N390G TRANSISTOR 2N2907 NPN Transistor 2n2222 BVC60 TPQ2221 2N2221 TPQ2222 2N2222 TPQ2483

motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA 2N2906/2907 TO-18 (TO-206AA) CASE 26-03, STYLE 1 2N3485/3486 TO-46 (TO-206AB) GENERAL PURPOSE TRANSISTOR , '" Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907,A 2N3485.A 2N3486.A Total Device Dissipation , Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A , CHARACTERISTICS DC Current Gain h FE â'" (IC = 0.1 mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 20 â'" â , 75 â'" â'" dC = 1.0 mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 25 _ _ 2N2905, 2N2907, 2N3486 50
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motorola transistor 2N2907A 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2n2907 Motorola TRANSISTOR 2n2904 2N2904/2905 2N2906/2907 N3486

2N2906

Abstract: for industrial service. DESCRIPTION P N P switching transistor in a TO-18 metal package. N PN complements: 2N2222 and 2N2222A. PINNING PIN 1 2 3 emitter base 2N2906; 2N2906A DESCRIPTION collector , collector-emitter voltage 2N2906 2N2906A collector current (DC) total power dissipation DC current gain transition , System (IEC 134). SYMBOL V cB O V CEO 2N2906; 2N2906A PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A emitter-base voltage collector current (DC) peak collector current peak
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MG0624

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE SPRRGUE TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors , into printed wiring boards. TYPICAL RATINGS (Max.) Power Dissipation, PD (each transistor , 400 150 2N2906 TPQ2907 60 40 5 50 100 â'" 150 10 200 8.0 400 150 2N2907 TPQ3798 60 40 5 10 150 â , '" 150 10 200 8.0 400 150 2N2221/2N2906 TPQ6002 60 30 5 30 100 â'" 150 10 200 8.0 400 150 2N2222/2N2907
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itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 TPQ2484 2N2484 ICL8008CTY ULN2151D ULN2151M ITT512

2N2906

Abstract: 2N2222A 0612 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors , Jun 02 Philips Semiconductors Product specification PNP switching transistors 2N2906 , PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. 3 Fig , . MAX. -60 UNIT open base V 2N2906 - -40 V 2N2906A - -60 V - , Product specification PNP switching transistors 2N2906; 2N2906A LIMITING VALUES In accordance
Philips Semiconductors
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2N2222A 0612 transistor 2N2222 PHILIPS MAM263 SCA54

2n2222 2n5401 2n5551

Abstract: TPQ6700 SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown , boards. ABSOLUTE MAXIUMUM RATINGS 'ower Dissipation, P0 (Each Transistor). 500 mW (Total , TPQ7053 SERIES TPQ QUAD TRANSISTOR ARRAYS ELECTRICAL CHARACTERISTICS at TA = + 25°C DC Current , indicated lc, VCE = 5.0 V. SERIES TPQ QUAD TRANSISTOR ARRAYS ELECTRICAL CHARACTERISTICS at TA = + 2SÂ
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TPQ2906 TPQ2221A TPQ2906A TPQ5400 TPQ2907A TPQA05 2n2222 2n5401 2n5551 TPQ6700 TPQ7052 sprague 2N3799 TPQ4002A TPQ4354 TPQ5550

typical 2n2222 npn transistors

Abstract: VHF power TRANSISTOR PNP TO-39 to 2N2906 Designed for general purpose switching applications and d.c. to VHF amplifier circuits , transistors similar to 2N3725 Ratings and Characteristics at 25°C ambient temperature (each transistor , â'¢Power dissipation per transistor. fTypical Pin configurations overleaf. H19 NPN SWITCHING Type Vceo V , 20* 213* 150 TO-18 - 2N2221 30 800 0.4 150 15 40 120 150 250 20 25* 175* 150 TO-18 2N2906 2N2222 30 , 600 0.4 150 15 100 300 150 200 50 45 100 150 TO-39 2N2219 2N2906 40 600 0.4 150 15 40 120 150 200 50
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FF3725J FF2221E FF2221J FF2222E FF2222J FF2483E typical 2n2222 npn transistors VHF power TRANSISTOR PNP TO-39 high voltage transistor to-39 2n2907 or similar PNP 2N2483
Abstract: D S / ICS fiS13Û S 0 D 0C I3flD 7^ 93D 03807 3 SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O PRAGUE SERIES TPQ quad transistor arrays ^ are general-purpose silicon transistor arrays consisting of four independent devices. Shown are 20 N PN types, 15 PNP types , 'ž (Each Transistor). 500 mW (Total Package). 2.0 W * Operating , TRANSISTOR ARRAYS ELECTRICAL CHARACTERISTICS at T * = + 2 5 °C DC Current Gain Part Number (V) V -
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TPQ2222A TPQ3904 TPQ4001A TPQ5551 TPQ6426 TPQ6427

tpq2907

Abstract:   ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose , Power Dissipation, P0 (Each Transistor). 500 mW (Total Package).2.0 W , SERIES TPQ QUAD TRANSISTOR ARRAYS ELECTRICAL CHARACTERISTICS at T , = + 2 5 °C DC Current Gain , '" 10 MPSA06 50 8.0 2N2906 8.0 2N2906A â'" Four PNP Devices TPQ2906 â'" 60 -
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05G433 TPQ7041 TPQ7042 TPQ7043 TPQA06 TPQ3799

2N2222

Abstract: 2N2477 to 2N2906 Designed for general purpose switching applications and d.c. to VHF amplifier circuits , transistors similar to 2N3725 Ratings and Characteristics at 25°C ambient temperature (each transistor , â'¢Power dissipation per transistor. fTypical Pin configurations overleaf. H19 NPN SWITCHING Type Vceo V , 20* 213* 150 TO-18 - 2N2221 30 800 0.4 150 15 40 120 150 250 20 25* 175* 150 TO-18 2N2906 2N2222 30 , 600 0.4 150 15 100 300 150 200 50 45 100 150 TO-39 2N2219 2N2906 40 600 0.4 150 15 40 120 150 200 50
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FF2483J FF2484E 2N2477 FERRANTI MEMORY ferranti Transistor 2N2222A Transistor 2N2222A FF2484J FF2906E FF2906J FF2907E

TZ554

Abstract: 2n2907 pnp bipolar transistor devices provide complements to Series TPQ quad transistor consisting of 1, 2, 3, or 4 discrete Darlington , % FIGURE 1 3WG.N0 A-10.780A FIGURE 2 nw6.N0. .4-10,/81A FIGURE 3 SERIES TPQ QUAD TRANSISTOR ARRAYS â'¢ The Sprague Series TPQ quad transistor arrays are general- cllQâ'"| ~ râ'"CU purpose silicon transistor arrays consisting of four independent 'â¡U-tT' 8 transistors. Shown are eight NPN types, five PNP , '", ~ ¡â'"011 = Power Dissipation, PD " (each transistor). 500 mW 1 m-â'"' lâ'"nn
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TZ552 TZ554 2n2907 pnp bipolar transistor 2N4258 TZ554 transistor TZ-81 TPP1000 TPP2000 TPP3000 TPP4000 TZ551

2N3053 NPN transistor

Abstract: 2N2917 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM , Ou 5/1 Ou 5/1 Ou 5/1 Ou 5/1 Ou 5/1 Ou Dual Transistor Dual Transistor Dual device in CSM 25-75
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2N3053 NPN transistor 2N2917 2N2907AQF 2N2906AQF 2n2917 dual transistor

2n3725

Abstract: 2n2222 similar to 2N2906 Designed for general purpose switching applications and d.c. to VHF amplifier circuits , transistors similar to 2N3725 Ratings and Characteristics at 25°C ambient temperature (each transistor , â'¢Power dissipation per transistor. fTypical Pin configurations overleaf. H19
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2n2222 similar FF2907J FF3467J 2N3467 FF3725E

2n2907 pnp

Abstract: 2n2222 transistor pin b c e && nm a â'¢â'¢ - -. -Central Semiconductor corp. Central Semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦I MPQ6501 MPQ6502 COMPLEMENTARY QUAD TRANSISTOR JEDEC TO-116 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPQ6501, MPQ6502, types are comprised of four independent silicon , and two 2N2906 (PNP) 2N2907 (PNP) chips, both acting as dual complementary pairs. MAXIMUM , "c 500 mA Power Dissipation (Each Transistor) P[> 65O mW Power Dissipation (To tal Package
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2n2907 pnp 2n2222 transistor pin b c e 2n2222 npn 2N2906 NPN Transistor 30TYP 225TYP

TO-18 amps pnp transistor

Abstract: BC107 NEW ENGLAND SEMICONDUCTOR PNP TRANSISTOR TO-18 PACKAGE TO-18 T0206AA SMALL SIGNAL V ceo (sus) VOLTS 40 60 40 60 60 60 80 120 60 60 60 80 45 60 60 80 60 80 200 300 45 25 25 18 Ic 1>FE @ V V c e V cE (M t) DEVICE TYPE 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029 2N6432 2N6433 BC107 BC108 BC109 2N869A (max) AMPS 0.6 0.6 0.6 0.6 0.2 0.2 0.1 0.1 0.05 0.05 0.2 0.2 0.2 0.2 1.0 1.0 1.0 1.0 0.5 0.5 0.2 0.2 0.2 0.2
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TO-18 amps pnp transistor
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