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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4353IMS#TRPBF Linear Technology LTC4353 - Dual Low Voltage Ideal Diode Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4359HMS8#TRPBF Linear Technology LTC4359 - Ideal Diode Controller with Reverse Input Protection; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4353IMS#PBF Linear Technology LTC4353 - Dual Low Voltage Ideal Diode Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4359HMS8#PBF Linear Technology LTC4359 - Ideal Diode Controller with Reverse Input Protection; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy

toshiba diode "do-41"

Catalog Datasheet MFG & Type PDF Document Tags

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 noise LLD DO-35 DO-41 LRP LLD MHD TOSHIBA 02CZ series 02DZ series 04AZ series 05AZ , -45 Leadless 3Pin Mini Mold 3Pin Small Mini Mold ROHM GSR MSR GSD MSD TO-220 TOSHIBA DO-41 DD , 2000.8 CROSS REFERENCE Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555 , Package Code URP Diodes for high frequency TOSHIBA 1SV270 MATSUSHITA NEC SONY Others , English Printing Document Name PIN Hitachi Diode Hitachi PIN Diode Publication Date
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MA151WK 1SS211 ISS376 DA323K IPS302 diode cross reference 1s1555 diode cross reference 1s2473 1S2473 DIODE equivalent 1S2473 DIODE 1S1588 1SS104 1S1553 1S1554 1S953 MA161

10C4

Abstract: E67349 Isolation Unit: mm The TOSHIBA TLP751 consists of GaAAs high-output light emitting diode and a high speed detector of one chip photo diode- transistor. This unit is 8-lead DIP. TLP751 has internal base , TLP751 TOSHIBA Photocoupler GaAAs Ired + Photo IC TLP751 Digital Logic Ground Isolation , · BSI approved: BS EN60065: 2002, tpLH = 0.5s (typ.)(RL=1.9k) TOSHIBA 11-10C4 Weight , Peak transient forward current (Note 3) Reverse voltage Detector Diode power dissipation
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TLP750 E67349 10C4 ic 8870 UL1577 EN60950-1 5000V 890VPK

10C4

Abstract: E67349 Isolation Unit in mm The TOSHIBA TLP751 consists of GaAAs high-output light emitting diode and a high speed detector of one chip photo diode- transistor. This unit is 8-lead DIP. TLP751 has internal base , TLP751 TOSHIBA Photocoupler GaAAs Ired + Photo IC TLP751 Digital Logic Ground Isolation Line , Switching speed: tpHL = 0.3µs (typ.) TOSHIBA Weight: 0.54g tpLH = 0.5µs (typ.)(RL=1.9k) · TTL , (Note 3) Reverse voltage Detector Diode power dissipation (Note 4) Base current Output
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VDE0884 EN60950 8000VPK
Abstract: The TOSHIBA TLP751 consists of GaAAs high-output light emitting diode and a high speed detector of one chip photo diode- transistor. This unit is 8-lead DIP. TLP751 has internal base connection. This base , TLP751 TOSHIBA Photocoupler GaAAs Ired + Photo IC TLP751 Digital Logic Ground Isolation Line , . 8870 TOSHIBA Weight: 0.54g 11-10C4 Pin Configuration(top view) · · Isolation voltage , current Reverse voltage Diode power dissipation Output current Peak output current Detector Output voltage Toshiba
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toshiba smd marking

Abstract: SA MARKING SMD mos Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package (1) Ultra-thin package " " Toshiba have developed a new 6-pin SMD package for power MOSFETs , , Typical package weight is 1 TOSHIBA Power Compact 6-pin series 2 Single 6 5 4 4-2 , VS-6 package are listed below. 4-1 (1) Structure of Trench MOSFE Package Planar -MOS V , 3 RDS(ON) = 15 m 2 1 0 1989 19 100 Built-in Protection Diode b ESD Breakdown
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toshiba smd marking SA MARKING SMD mos kec smd marking smd marking S3A DONG YANG MOTOR Diode marking TY 6pin

tlp550

Abstract: 10C4 TLP550 TOSHIBA Photocoupler Infrared LED + Photo IC TLP550 Digital Logic Isolation Line , TLP550 constructs a high emitting diode and a one chip photo diode- transistor. TLP550 has no base , compatible TOSHIBA 11-10C4 Weight: 0.54 g (typ.) UL recognized: UL1577, file No. E67349 Pin , (10s) Tsol 260 °C BVS 2500 Vrms LED Forward current Reverse voltage Diode , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions
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TC74HC574AP

Abstract: 74ls564 TOSHIBA TC74HC564AP/AF,574AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , [ 11 CK (TOP VIEW 1 2001-05-17 TOSHIBA TC74HC564AP/AF,574AP/AF/AFW IEC LOGIC SYMBOL OE CK , TC74HC574A DO D1 D2 D3 D4 D5 D6 D7 QO Q1 Q2 Q3 Q4 Q5 Q6 Q7 2 2001-05-17 TOSHIBA TC74HC564AP/AF,574AP/AF , Input Voltage V,N â'" 0.5~Vcc + 0.5 V DC Output Voltage VoUT â'" 0.5~Vcc + 0.5 V Input Diode Current ilk ±20 mA Output Diode Current 'ok ±20 mA DC Output Current 'out ±35 mA DC Vcc/Ground Current
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TC74HC564AP TC74HC564AF TC74HC574AP TC74HC574AF TC74HC574AFW HC574A 74ls564 qi 20pin TC74HC574AP/AF/AFW

HC574

Abstract: 01ck TOSHIBA TC74HC564AP/AF,574AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , CK (TOP VIEW 980508EBA2 0 TOSHIBA is continually working to improve the quality and the , the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within
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HC574 01ck 564a TC74HC564A 74LS564/574 20PIN DIP20-P-300-2 87TYP SOL20-P-300-1

TC7SG86AFS

Abstract: TC7SG86AFS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86AFS 2 , VCC + 0.5 V Input diode current IIK -20 mA Output diode current IOK ±20 (Note , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , 1.0 10.6 1.65 to 1.95 4.4 6.6 1.0 7.1 2.3 to 2.7 3.0 4.1 1.0 , 3.2 4.7 1.0 5.3 2.6 3.6 1.0 4.1 30.6 15.0 31.4
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HC574

Abstract: HC574A TOSHIBA TC74HC564AP/AF,574AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , Q6 D7 9 c ] 12 Q7 GND 10 c ] 11 CK (TOP VIEW] 961001EBA2 # TOSHIBA is continually working , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss , TOSHIBA products are used within specified operating ranges as set forth in the most recent products
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D4615

TC7PG34FU

Abstract: TC7PG34FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG34FU Dual , 0.5 to 7.0 V - 0.5 to 4.6 (Note 1) DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ± 25 DC VCC/GND current , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 10.2 4.1 6.2 1.0 6.6 3.0 to 3.6 Power dissipation capacitance 2.3 to 2.7
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TC7SG86FU

Abstract: TC7SG86FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86FU 2 , V -0.5 to 4.6 (Note 1) DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±25 mA DC VCC/ground current , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 1.0 7.6 2.3 to 2.7 3.4 4.1 1.0 4.7 3.0 to 3.6 2.7 3.3 1.0
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FC54M

Abstract: FC53M CROSS - f -y _ REFERENCE - K Marker S w itc h in g d io d e s TOSHIBA Factage DO-41 , e s TOSHIBA 02CZ seríes 02DZ series 04AZ series RD-ES series RD-L series RD-E series RD-F series , Package Code MPAK URP MHO DO-38 05AZ series DO-41 LRP LLD MHD DO-35 Low voltage Low noise 150 250 MHD , Diodes for high frequency TOSHIBA 1SV214/1SV254 MATSUSHITA MA360/372/369 Siemens ROHM ITT 1T364 1SV218 , -f -K TOSHIBA SANKEN SHINDENGEN MA740 MA721 MPAK I 1SS344 MA748 MA720 MA10701 MA10703
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1SS247 1SS1586 FC54M FC53M RLS135 "cross reference" 1SS153 sanken SE014 DO-41 1SS267 1S2092 1S2460 1S2461 1SS240

TC7WZ38FK

Abstract: TC7WZ38FU TC7WZ38FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ38FU,TC7WZ38FK , -0.5 to 6 (Note 1) V Input diode current IIK -20 mA Output diode current IOK DC , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling , 2.8 4.1 1.0 4.5 0.5 2.2 3.4 0.5 3.6 1.80 ± 0.15 2.0 4.6 9.2 2.0 9.6 2.5 ± 0.2 1.5 3.2 5.7 1.5 6.1 3.3 ± 0.3 1.0 2.4 4.1 1.0 4.5
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TC74LCX

TC7PG04FU

Abstract: TC7PG04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04FU Dual Inverter , 4.6 (Note 1) DC output voltage VOUT Input diode current IIK -20 Output diode , ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability , 9.8 1.0 10.2 4.1 6.2 1.0 6.6 3.0 to 3.6 Power dissipation capacitance 2.3 to 2.7 CIN 1.1 to 1.3 Input capacitance 4.1 0.9 CL = 30 pF, RL = 1 M
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Abstract: TC7SG86FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86FE 2 , output voltage Input diode current Output diode current DC output current DC VCC/ground current Power , the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods , 4.2 3.4 3 9 Max 20.9 10.0 6.6 4.1 3.3 22.8 9.9 7.3 4.7 3.6 31.4 13.9 9.8 6.0 4.7 Ta 40 to 85 , 11.9 ns 7.5 5.3 4.1 59.4 16.9 10.2 6.5 5.1 pF pF Unit (Note 13) 0.9 to 3.6 Note 13: CPD is Toshiba
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Abstract: TC7WZ38FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ38FU,TC7WZ38FK , 25°C) Characteristics Power supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead , the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods , 9.2 5.7 4.1 3.4 9.2 5.7 4.1 3.4 Ta 40 to 85°C Min 2.0 1.5 1.0 0.5 2.0 1.5 1.0 0.5 Max 9.6 6.1 Toshiba
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TC7SG86FE

Abstract: TC7SG86FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86FE 2 , 3 5 VCC V DC output voltage VOUT Input diode current IIK -20 Output diode , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 1.0 7.6 2.3 to 2.7 3.4 4.1 1.0 4.7 3.0 to 3.6 2.7 3.3 1.0 , 7.5 3.4 4.7 1.0 5.3 2.7 3.6 1.0 4.1 32.1
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E67349

Abstract: TLP550 TLP551 TOSHIBA Photocoupler GaAAs IRED & Photo IC TLP551 Controllers Interfaces for , between circuits of different potential Unit: mm The TOSHIBA TLP551 consists of a GaAAs high-output light emitting diode and a high speed detector of one chip photo diode-transistor. This unit is 8 , ) TOSHIBA 11-10C4 Weight: 0.54 g (typ.) 1 8 2 7 3 6 4 5 1: N.C. 2: Anode 3 , . 60%) (Note 7) BVS 2500 Vrms LED Forward current Reverse voltage Diode power
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TLP550

Abstract: TLP550 TOSHIBA Photocoupler Infrared LED + Photo IC TLP550 Digital Logic Isolation Line , constructs a high emitting diode and a one chip photo diode- transistor. TLP550 has no base connection, and , UL recognized: UL1577, file No. E67349 TOSHIBA 11-10C4 Weight: 0.54 g (typ.) Unit in mm Pin , °C) Characteristic Forward current Pulse forward current LED Peak transient forward current Reverse voltage Diode , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
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Abstract: TOSHIBA TC74HCT374AP/AF/AFW Octal D-Type Flip-Flop with 3-State Output TC74HCT374 Non-Inverting , discharge or transient excess voltage. Features · High Speed: fU A X = 41 MHz(Typ.) at = 5V · Low Power , ): No Change TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 501 TC74HCT374AP/AF/AFW BIVIOS , 01 01 02 02 0 3 03 Q4 05 06 07 Logic Diagram 502 TOSHIBA AMERICA , Ratings Parameter Supply Voltage Range DC Input Voltage DC Output Voltage Input Diode Current Output -
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TC74HCT374A TC74HC373A 74LS374 T374A
Abstract: TC7WZ38FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ38FU, TC7WZ38FK , Input diode current IIK â'20 mA Output diode current IOK DC output current IOUT , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , 1.5 3.5 5.7 1.5 6.1 1.0 2.8 4.1 1.0 4.5 0.5 2.2 3.4 0.5 3.6 , ± 0.3 1.0 2.4 4.1 1.0 4.5 5.0 ± 0.5 CL = 50 pF, RL = 500 Ω 2.0 0.5 Toshiba
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Abstract: TLP550 TOSHIBA Photocoupler Infrared LED + Photo IC TLP550 Degital Logic Isolation Line , constructs a high emitting diode and a one chip photo diode- transistor. TLP550 has no base connection, and , z UL recognized: UL1577, file No. E67349 TOSHIBA 11-10C4 Weight: 0.54 g (typ.) Unit in mm Pin , °C) Characteristic Forward current Pulse forward current LED Peak transient forward current Reverse voltage Diode , Condition IF = 0 16 mA, VCC = 5V, RL = 4.1 k tpHL (Note 7) Rank 0: RL = 1.9 k IF = 16 0 mA, VCC = 5V, RL = Toshiba
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TC7P

Abstract: TC7PG34AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG34AFE Dual , voltage DC output voltage Input diode current Output diode current DC output current DC VCC/GND current , the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods , 3.4 2.8 40.7 17.8 9.1 6.6 4.1 3.3 3 6 Max 23.2 10.2 7.0 4.4 3.5 26.0 11.4 7.5 4.8 3.8 33.9 14.3 9.8 , 42.6 12.0 7.6 4.9 4.1 44.5 13.6 7.7 5.5 4.4 64.1 17.4 10.2 6.6 5.2 pF pF ns Unit Note 9: CPD is
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TC7P

74HC00

Abstract: TC74LVX00F TC74LVX00F/FN/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX00F , . TC74LVX00F TC74LVX00FN Features · High-speed: tpd = 4.1 ns (typ.) (VCC = 3.3 V) · Low power , DC output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK -20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground , ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
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TC74LVX00FT 74HC00 SOL14-P-150-1 TSSOP14-P-0044-0

fr2t diode

Abstract: fr2n T O SH IB A TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2NJFR2T TFR7N STROBO , Repetitive Peak Reverse Current Reverse Recovery Time MARKING DO-41 JEDEC EIAJ TOSHIBA 3-3C1A (Ta , TFR2N TFR2T 961001EAA2 TOSHIBA is continually w orking to improve the quality and the reliability of , , when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations In which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to
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fr2t diode fr2n

TC7PG34AFE

Abstract: TC7PG34AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG34AFE Dual , voltage VOUT V Input diode current IIK -20 Output diode current IOK ±20 DC , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , 9.8 1.0 10.2 4.1 6.2 1.0 6.6 3.3 4.8 1.0 5.2 3.6 3 , capacitance 2.3 to 2.7 CIN 1.1 to 1.3 Input capacitance 4.1 0.9 CL = 30 pF
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74ALS11

Abstract: TC74VHC11F TC74VHC11F/FN/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11F , speed: tpd = 4.1 ns (typ.) at VCC = 5 V · Low power dissipation: ICC = 2 A (max) at Ta = 25°C · , output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK -20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
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TC74VHC11FN TC74VHC11FT 74ALS11 TC74VHC11

74LS374 DATASHEET

Abstract: IC 74LS374 using in led interfacing TC74HCT374AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT374AP , Rating -0.5~7 V VIN -0.5~VCC + 0.5 V VOUT -0.5~VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±35 mA , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions , 38 48 5.5 22 33 41 4.5 17 30 38 5.5 14 25
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TC74HCT374AF 74LS374 DATASHEET IC 74LS374 using in led interfacing

TC7PG04AFE

Abstract: TC7PG04AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04AFE Dual , voltage VOUT Input diode current IIK -20 Output diode current IOK ±20 DC output , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , 1.0 17.4 1.65 to 1.95 6.6 9.8 1.0 10.2 4.1 6.2 1.0 6.6 , Input capacitance 4.1 0.9 CL = 30 pF, RL = 1 M 1.0 3.0 to 3.6 tpHL CL = 15
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74HC04

Abstract: TC74LVX04F TC74LVX04F/FN/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX04F , TC74LVX04FN Features · High-speed: tpd = 4.1 ns (typ.) (VCC = 3.3 V) · Low power dissipation: ICC , Input diode current IIK -20 mA Output diode current IOK ±20 mA DC output current , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 16.0 15 4.1 6.2 1.0 7.5 50 6.6 9.7 1.0 tosLH tosHL 11.0
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TC74LVX04FT 74HC04

74ALS27

Abstract: TC74VHC27F TC74VHC27F/FN/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC27F , Features · High speed: tpd = 4.1 ns (typ.) at VCC = 5 V · Low power dissipation: ICC = 2 A (max , V Input diode current IIK -20 mA Output diode current IOK ±20 mA DC , reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and , Max 15 6.2 8.8 1.0 10.5 50 8.7 12.3 1.0 14.0 15 4.1
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TC74VHC27FN TC74VHC27FT 74ALS27 TC74VHC27FK TC74VHC27 VSSOP14-P-0030-0

74LS374

Abstract: DIP20-P-300-2 TOSHIBA TC74HCT374AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , ) (18) (19) QO Q1 Q2 Q3 Q4 Q5 Q6 Q7 980508EBA2 0 TOSHIBA is continually working to improve , the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA
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TC74HCT374AFW

74F05

Abstract: DIP14-P-300-2 TC74AC05P/F/FN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC05P , VCC + 0.5 V DC output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±50 mA DC output current IOUT +50 mA DC , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , 4.1 7.0 1.0 8.0 5.0 ± 0.5 3.5 5.3 1.0 6.0 3.3 ± 0.3 5.9 9.1
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TC74AC05F TC74AC05FN 74F05 DIP14-P-300-2 home use Inverter application note TC74AC05 TC74AC04

DIP20-P-300-2

Abstract: TC74HCT374AF TOSHIBA TC74HCT374AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , ) (18) (19) QO Q1 Q2 Q3 Q4 Q5 Q6 Q7 961001EBA2 TOSHIBA is continually working to improve the , the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA
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HCT534A TC74HCT534A

1N4007 TOSHIBA

Abstract: diode 1n4007 toshiba 9097250 TOSHIBA CD I SCRETE/OPTO) 90D 16494 TOSHIBA {DISCRETE/0PT0> Diodes "TO DE I^OTTSSO 001b4TM 7 D 13 T-O-b'O? Switching Diode (DO-35) VB(V) lo(MA) 25(30) 50 70 75 150 1N4152 1N4150 1N4151 1N4153 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 200 1N4150 1N4606 1N4148 Surface Mount Diode Vâ'ž(V) WMA) 30 50 70 75 150 DLN4152 DLN4153 DLN914, A, B DLN916, A, B DLN4149 DLN4446 DLN4447 DLN4448 DLN4449 200 DLN4148 Rectifiers General Purpose Rectifier (DO-41, Glass
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1C203D C122B MAC94A-6 MAC222A-6 MAC525-4 MAC525-6 1N4007 TOSHIBA diode 1n4007 toshiba IN5625 IN5060 diode scr C106D 1N4001 1N4002 1N4003 1N5059 1N4004 1N5060

GT30F131

Abstract: GT30F124 shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for , shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for , omitted. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales , transistors, the minus sign () indicating a negative voltage is omitted. Contact the Toshiba sales , the Toshiba sales representative for information about RoHS compliance before you purchase any
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GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 SCE0004L TTC4116 2SC4118 TTA1586 2SA1588 2SC4117
Abstract: TC74VHC11F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11F , . TC74VHC11FT Features â'¢ High speed: tpd = 4.1 ns (typ.) at VCC = 5 V â'¢ Low power dissipation , â'0.5 to 7.0 V DC output voltage VOUT â'0.5 to VCC + 0.5 V Input diode current IIK â'20 mA Output diode current IOK ±20 mA DC output current IOUT  , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Toshiba
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Abstract: TC74VHC27F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC27F , input voltages. TC74VHC27FT Features · · · · · · · High speed: tpd = 4.1 ns (typ.) at VCC = 5 V , ) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , Condition VCC (V) 3.3 ± 0.3 5.0 ± 0.5 (Note) CL (pF) 15 50 15 50 Min Ta = 25°C Typ. 6.2 8.7 4.1 5.6 Toshiba
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Abstract: TC74AC05FN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC05FN Hex Inverter , range DC input voltage DC output voltage Input diode current Output diode current DC output current DC , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , (Note) 3.3 ± 0.3 5.0 ± 0.5 3.3 ± 0.3 5.0 ± 0.5 Min Ta = 25°C Typ. 4.1 3.5 5.9 4.1 5 10 8 Max , TC74AC05FN RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates Toshiba
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Abstract: TC74VHC11F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11F,TC74VHC11FT , . TC74VHC11FT Features · · · · · · · High speed: tpd = 4.1 ns (typ.) at VCC = 5 V Low power dissipation: ICC , ) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , Condition VCC (V) 3.3 ± 0.3 5.0 ± 0.5 (Note) CL (pF) 15 50 15 50 Min Ta = 25°C Typ. 6.1 8.6 4.1 5.6 Toshiba
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Abstract: TC74VHC11FN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11FN Triple 3 , High speed: tpd = 4.1 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 2 A (max) at Ta = 25°C High , ) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , VCC (V) 3.3 ± 0.3 5.0 ± 0.5 (Note) CL (pF) 15 50 15 50 Min Ta = 25°C Typ. 6.1 8.6 4.1 5.6 4 17 Toshiba
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Abstract: TC7WH157FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH157FC 2-Channel Multiplexer Features â'¢ High-speed :tpd = 4.1 ns (typ.) at VCC = 5 V, CL = 15pF â'¢ Low , 7.0 V Product name Unit â'0.5 to VCC + 0.5 DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK ±20 DC output current IOUT ±25 mA , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Toshiba
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Abstract: TOSHIBA TC74HC564AP/AF,574AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON , Handbook. 1997 08-07 - 1/6 TOSHIBA TC74HC564AP/AF,574AP/AF/AFW IEC LOGIC SYMBOL TC74HC574A , ut notice. 1997 08-07 - 2/6 TOSHIBA TC74HC564AP/AF,574AP/AF/AFW ABSOLUTE MAXIMUM , Voltage IlK ±20 mA Output Diode Current l0K ±20 mA DC Output Current loUT , Input Diode Current Storage Temperature RECOMMENDED OPERATING CONDITIONS PARAM ETER SYMBOL -
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74LS374

Abstract: DIP20-P-300-2 TOSHIBA TC74HCT374AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , Q1 Q2 Q3 Q4 Q5 Q6 Q7 1 2001-05-17 TOSHIBA TC74HCT374AP/AF/AFW SYSTEM DIAGRAM DO D1 D2 D3 D4 D5 D6 D7 QO Q1 Q2 Q3 Q4 Q5 Q6 Q7 2 2001-05-17 TOSHIBA TC74HCT374AP/AF/AFW ABSOLUTE , '" 0.5~VCC + 0.5 V DC Output Voltage VoUT â'" 0.5~VCC + 0.5 V Input Diode Current IlK ±20 mA Output Diode Current 'OK ±20 mA DC Output Current 'out ±35 mA DC Vcc/Ground Current Ice ±75 mA Power
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TLP551

Abstract: The TOSHIBA TLP551 consists of a GaAAs high-output light emitting diode and a high speed detector of , TLP551 TOSHIBA Photocoupler GaAAs IRED & Photo IC TLP551 Digital Logic Ground Isolation Line , . UL recognized: UL1577, file No. E67349 JEDEC JEITA TOSHIBA 11-10C4 Unit: mm · · · Pin , Diode power dissipation Output current Peak output current Output voltage Detector Supply voltage , upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept
Toshiba
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tPHL 74hc00

Abstract: TC74LVX00FN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX00FN Quad 2 , -150-1.27 : 0.12 g (typ.) Features · · · · · · · High-speed: tpd = 4.1 ns (typ.) (VCC = 3.3 V) Low power , Ratings (Note) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Toshiba
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tPHL 74hc00

TOSHIBA 74HC00

Abstract: TC74LVX00F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX00F,TC74LVX00FT , supply and input voltages. TC74LVX00F TC74LVX00FT Features · · · · · · · High-speed: tpd = 4.1 , diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage , ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 0.3 2.7 CL (pF) 15 50 15 50 50 50 (Note 2) (Note 3) Min Ta = 25°C Typ. 5.4 7.9 4.1 6.6 4 19
Toshiba
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TOSHIBA 74HC00
Abstract: TC74AC05P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC05P, TC74AC05F , '0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK  , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , ± 0.3 ⯠4.1 7.0 1.0 8.0 5.0 ± 0.5 ⯠3.5 5.3 1.0 6.0 3.3 ± 0.3 ⯠5.9 9.1 1.0 10.4 5.0 ± 0.5 ⯠4.1 6.6 1.0 7.5 Unit Max Toshiba
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Abstract: TOSHIBA TC74HC564AP/AF,574AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , the TO SH IBA Semiconductor Reliability Handbook. 1997 08-07 - 1/6 TOSHIBA TC74HC564AP , TOSHIBA TC74HC564AP/AF,574AP/AF/AFW ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Range DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC Vcc , Vçc or GND V| N = Vcc or GND V in = Vcc or GND 1997 08-07 - 3/6 TOSHIBA TC74HC564AP/AF -
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Abstract: TC74LVX04FN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX04FN Hex , .) Features · · · · · · · High-speed: tpd = 4.1 ns (typ.) (VCC = 3.3 V) Low power dissipation: ICC = 2 A (max , Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , Ta = 25°C Typ. 5.4 7.9 4.1 6.6 4 18 Max 10.1 13.6 6.2 9.7 1.5 1.5 10 Ta = -40 to 85°C Min 1.0 1.0 Toshiba
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Abstract: TC74VHC27FN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC27FN Triple 3 , speed: tpd = 4.1 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 2 A (max) at Ta = 25°C High noise , Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , VCC (V) 3.3 ± 0.3 5.0 ± 0.5 (Note) CL (pF) 15 50 15 50 Min Ta = 25°C Typ. 6.2 8.7 4.1 5.6 4 20 Toshiba
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Abstract: TC74LVX04F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX04F,TC74LVX04FT , input voltages. TC74LVX04F TC74LVX04FT Features · · · · · · · High-speed: tpd = 4.1 ns (typ , (Note) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Toshiba
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Abstract: TC74VHC27F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC27F , input voltages. TC74VHC27FT Features â'¢ High speed: tpd = 4.1 ns (typ.) at VCC = 5 V â , VCC + 0.5 V Input diode current IIK â'20 mA Output diode current IOK Â , reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ , 12.3 1.0 14.0 4.1 5.9 1.0 7.0 50 5.6 7.9 1.0 9.0 10 (Note Toshiba
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VR1G

Abstract: Diode VR1B TOSHIBA TOSHIBA FAST RECOVERY DIODE TV APPLICATIONS (FAST RECOVERY) TVR1B,TVR1G,TVR1J SILICON , Voltage Repetitive Peak Reverse Current Reverse Recovery Time M ARKING DO-41 JEDEC EIAJ TOSHIBA 3-3C1A , 961001EAA2 TOSHIBA is contin u ally w o rkin g to im prove th e q u a lity and th e re lia b ility o f its , th e buyer, w hen u tilizing TOSHIBA products, to observe standards o f safety, and to avoid situations in w hich a m alfunction o r fa ilu re o f a TOSHIBA product could cause loss o f human life
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VR1G Diode VR1B

fr1n

Abstract: TOSHIBA TFR1NJFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T STROBO , 00.75 , Z H O INI + 1. ANODE 2. CATHODE JEDEC DO-41 EIAJ TOSHIBA 3-3C1A Weight : 0.3g , FR1N TFR1N FRIT TFR1T Year (Last Number of the Christian Era) Cathode Mark 961001EAA2 0 TOSHIBA is , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
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fr1n
Abstract: TC74AC05P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC05P,TC74AC05F , 0.5 V DC output voltage VOUT â'0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±50 mA DC output current IOUT +50 mA DC VCC , Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ'/Derating Concept and Methods) and , 3.3 ± 0.3 ⯠4.1 7.0 1.0 8.0 5.0 ± 0.5 ⯠3.5 5.3 1.0 6.0 3.3 Toshiba
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Abstract: TC7WH157FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH157FC 2 , 5.5-V Tolerant inputs. :tpd = 4.1 ns (Typ.) at VCC = 5 V, CL = 15pF :ICC = 2A(Max.) at Ta = 25°C :VNIH , Ratings ( Ta = 25°C ) Characteristics Supply viltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/GND current Power dissipation Storage temperature , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and Toshiba
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Abstract: TC74VHC27F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC27F , mismatched supply and input voltages. TC74VHC27FT Features â'¢ High speed: tpd = 4.1 ns (typ.) at , â'0.5 to 7.0 V DC output voltage VOUT â'0.5 to VCC + 0.5 V Input diode current IIK â'20 mA Output diode current IOK ±20 mA DC output current IOUT  , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Toshiba
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fr2t diode

Abstract: fr2N TOSHIBA TFR2NJFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T STROBO , , z H O ID oj * 1. ANODE 2. CATHODE JEDEC DO-41 EIAJ TOSHIBA 3-3C1A Weight : 0.3g , TFR2T Year (Last Number of the Christian Era) Cathode Mark 961001EAA2 0 TOSHIBA is continually , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
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fr2t
Abstract: TO SHIBA 3BH41,3GH41,3JH41 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 3BH41, 3GH41 , 3GH41 3 JH 3JH 41 961001EAA2 # TOSHIBA is continually w orking to improve the quality and the , Repetitive Peak Reverse Voltage RATING U NIT CATHODE MARK A - 100 3GH41 3JH 41 < 1.3 , the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury -
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DO-201

TPC8A03

Abstract: TPC8A03-H TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel , Applications Portable Equipment Applications · Unit: mm Built-in schottky barrier diode Low forward , .) · Low drain-source ON-resistance: RDS (ON) = 4.1 m (typ.) · High forward transfer , current Repetitive avalanche energy (Tc = 25) (Note 4) JEITA A JEDEC TOSHIBA , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions
Toshiba
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TPC8A03

toshiba diode do-41

Abstract: toshiba diode "do-41" TOSHIBA TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR2B, TVR2G , , o ID oj o in 00.75 , z H O ID oj 1. ANODE 2. CATHODE JEDEC DO-41 EIAJ TOSHIBA 3-3C1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 0.3 g CHARACTERISTIC SYMBOL , Christian Era) Cathode Mark 961001EAA2 0 TOSHIBA is continually working to improve the quality and the , the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in
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toshiba diode do-41 toshiba diode "do-41" VR2B toshiba marking code diode

74f05

Abstract: TC74AC05P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC05P,TC74AC05F Hex , Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , 0.3 5.0 ± 0.5 Min Ta = 25°C Typ. 4.1 3.5 5.9 4.1 5 10 8 Max 7.0 5.3 9.1 6.6 10 Ta = -40 to , RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA
Toshiba
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Abstract: TC74VHC11F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11F , . TC74VHC11FT Features â'¢ High speed: tpd = 4.1 ns (typ.) at VCC = 5 V â'¢ Low power dissipation , '0.5 to VCC + 0.5 V Input diode current IIK â'20 mA Output diode current IOK Â , reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ , 14.0 4.1 5.9 1.0 7.0 50 5.6 7.9 1.0 9.0 10 (Note) Min Unit Toshiba
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TPCC8A01-H

Abstract: TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel , Applications Portable Equipment Applications · Unit: mm Built-in a Schottky barrier diode Low forward voltage: VDSF = 0.6 V (max) · High-speed switching · Small gate charge: QSW = 4.1 nC (typ , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , next page. JEDEC TOSHIBA 2-3X1A Weight: 0.02 g (typ.) Circuit Configuration 8 7
Toshiba
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Abstract: TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N,TFR1T TFR1N, TFR1T STROBO FLASHER APPLICATIONS (FAST RECOVERY) Unit in mm · · · Average Forward Current : If (AV) = 0.5 A , CATHODE JEDEC EIAJ TOSHIBA W eight : 0.3 g DO-41 3-3C1A ELECTRICAL CHARACTERISTICS (Ta = 25 , 1500 0.5 2 20 -4 0 -1 2 5 -4 0 -1 2 5 UNIT V A A2s A °C °C ^41 n M AXIM UM RATINGS * ^ o , TOSHIBA TFR1N,TFR1T lF - Ta MAX. - If (AV) INSTANTANEOUS FORWARD VOLTAGE Up (V) AVERAGE -
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TPCC8A01-H

Abstract: TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel , Applications Portable Equipment Applications · Unit: mm Built-in a Schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) · High-speed switching · Small gate charge: QSW = 4.1 nC (typ , -55 to 150 °C 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE JEDEC JEITA TOSHIBA , maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Toshiba
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In5062

Abstract: 1N4007W 9097250 TOSHIBA CDI S C R E T E /O P T O ) 9 0D 16494 /3 TOSHIBA -CDISCRETE/OPTOJ DE § OlkMTM 7 Diodes Switching Diode (DO-35) VB(V) 2 5 (3 0 ) lo(MA) \ 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149 1N 4446 1 N 4447 1N 4448 1N 4449 1N 4148 150 1N4152 1N4150 1N 4151 1N 4153 200 1N4150 1N 4606 Surface M ount Diode V,(V) 30 lo(MA) DLN914, A, B DLN916 , Rectifiers General Purpose Rectifier (DO-41, GEass) ^ _ ' ' - 1,0 3.0 50 1N4001 100 1N4002
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In5062 1N4007W in 5062 SCR 1 c106d N916 1N4007 rectifier diode 1N5624 1N5625 1N4005 1N5061 1N5626 1N4006

TPC8A03

Abstract: TPC8A03-H TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel , Applications Portable Equipment Applications · Unit: mm Built-in schottky barrier diode Low forward , .) · Low drain-source ON-resistance: RDS (ON) = 4.1 m (typ.) · High forward transfer , temperature range Tstg -55 to 150 °C Drain current DC A JEDEC JEITA TOSHIBA , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions
Toshiba
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A2754

TOSHIBA 1N DIODE

Abstract: TFR1 T O SH IB A TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1NJFR1T TFR 1N STROBO , Code TOSHIBA 3-3C1A Weight : 0.3g MIN. TYP. MAX. UNIT V 1.3 10 juA 10 - - - - - - JEDEC EIA J DO-41 //S CODE Color : Yellow FR1N Month (Starting from Alphabet A) FRIT Year (Last Number of the Christian Era) Cathode Mark TYPE TFR1N TFR1T 961001EAA2 TOSHIBA is continually w , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of
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TOSHIBA 1N DIODE TFR1

TC7WG74FK

Abstract: TC7WG74FU TC7WG74FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG74FU,TC7WG74FK , (Note 1) -0.5 to VCC + 0.5 (Note 2) D 2 IIK -20 Output diode current IOK -20 , DC VCC / ground current D PR CLR V Input diode current 8 VCC CK 1 °C mA , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , 4.2 40.8 1.0 25.3 1.0 38.5 12.7 0.9 5.1 1.0 5.5 3.3 4.1
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K4002

Abstract: 2SK4002 2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4002 Chopper , 2.3 ± 0.2 Characteristic 4.1 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 3 0.6 ± 0.15 , JEDEC JEITA TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under , . Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A Note
Toshiba
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K4002
Abstract: TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOSî'²-H/Schottky Barrier Diode) TPCA8A09-H 1 , . Features (1) Built-in a schottky barrier diode (2) High-speed switching (3) Small gate , maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , '¥ 82 î'¥ nC VDD ≠24 V, VGS = 5 V, ID = 51 A î'¥ 41 î'¥ VDD ≠24 V, VGS = 10 V , IDR = 51 A, VGS = 0 V Diode forward voltage (Note 5) Test Condition î'¥ î'¥ -1.2 Toshiba
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CSG3001-18A04

Abstract: thyristor BBC Main GTO in SAFUK 80F500 Old code 3AFE 0991 6431 Manufacturer Toshiba Clamp SLZF 70A , 3AFE 0991 7632 3AFE 1000 2222 3AFE 1000 1463 Manufacturer Toshiba Mitsubishi Westcode GEC , 0991 7756 3AFE 0991 7586 3AFE 0991 7748 3AFE 1000 1471 Manufacturer Toshiba Toshiba Mitsubishi , 7888 3AFE 0991 7811 3AFE 1000 1145 Manufacturer Toshiba Toshiba Mitsubishi Westcode Clamp , Toshiba Toshiba Westcode Westcode ABB Semic. Clamp SLZF 117 (11.25 kN) Code 3AFE 5741 9709
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CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 540F575 870F575 630F660 1000F660 1370F690 400F415

TC74LCX16373FT

Abstract: TC74LCX16373FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX16373FT , 7 42 VCC 1Q5 8 41 1D5 1Q6 9 40 1D6 GND 10 39 GND 1Q7 11 , 1D7 1D8 2D1 2D2 2D3 2D4 2D5 2D6 2D7 2D8 2 47 46 44 43 41 40 38 37 36 35 33 , level System Diagram 1D2 46 1D1 47 1D3 44 1D4 43 1D5 41 1D6 40 1D7 38 , ) V IIK -50 Output diode current IOK ±50 DC output current IOUT ±50 mA
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74LS165

Abstract: TC74HC165AF TC74HC165AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC165AP , output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , set-up time 4.5 6.0 ( S/L ) 95 6.0 Minimum pulse width 75 6.0 41 28
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TC74HC165AF TC74HC165AFN 74LS165 TC74HC165A

TC7WG74FC

Abstract: TC7WG74FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG74FC D-Type Flip , voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 4.1 5.1 1.0 5.5 3.0 to 3.6 3.3 4.1 1.0 4.5 0.9 54.8 1.0 , 1.95 CL = 10 pF 4.1 5.0 1.0 5.3 46.9 1.0 27.8 1.0 45.2
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TC74LCX16374AFT

Abstract: TC74LCX16374AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX16374AFT , 43 1D4 VCC 7 42 VCC 1Q5 8 41 2OE 2CK 1D5 1Q6 9 40 1D6 , 1 2D4 VCC 18 1D 2D3 2Q4 17 47 46 44 43 41 40 38 37 36 35 33 32 30 29 , change System Diagram 1D2 46 1D1 47 1D3 44 1D4 43 1D5 41 1D6 40 1D7 38 , (Note 3) Input diode current IIK -50 Output diode current IOK ±50 DC output current
Toshiba
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toshiba diode "do-41"

Abstract: tvr1 TO SH IB A TOSHIBA FAST RECOVERY DIODE w « w m TVR1 B,TVR1 G,TVR1 J SILICON DIFFUSED , VRRM = Rated Ip = 20mA, I r = 1mA 1^ = 100mA, Ir = lOQmA DO-41 JEDEC EIAJ TOSHIBA 3-3C1A Weight , TVR2G TVR2J 961001EAA2 TOSHIBA is continually w orking to improve the quality and the reliability of , , when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations In which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to
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tvr1 TVR1B

TC74LCX16374FT

Abstract: TC74LCX16374FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX16374FT , 43 1D4 VCC 7 42 VCC 1Q5 8 41 2OE 2CK 1D5 1Q6 9 40 1D6 , 1 2D4 VCC 18 1D 2D3 2Q4 17 47 46 44 43 41 40 38 37 36 35 33 32 30 29 , change System Diagram 1D2 46 1D1 47 1D3 44 1D4 43 1D5 41 1D6 40 1D7 38 , ) V Input diode current IIK -50 Output diode current IOK ±50 DC output current
Toshiba
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TPCA8A09-H

Abstract: TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A09-H 1 , ) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , , ID = 51 A VDD 24 V, VGS = 5 V, ID = 51 A VDD 24 V, VGS = 10 V, ID = 51 A Min Typ. 82 41 18 8.0 , ) Characteristics Reverse drain current (pulsed) Diode forward voltage (Note 5) Symbol IDRP VDSF IDR = 2 A, VGS = 0
Toshiba
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TC74LCX16373AFT

Abstract: TC74LCX16373AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX16373AFT , 7 42 VCC 1Q5 8 41 1D5 1Q6 9 40 1D6 GND 10 39 GND 1Q7 11 , 1D7 1D8 2D1 2D2 2D3 2D4 2D5 2D6 2D7 2D8 2 47 46 44 43 41 40 38 37 36 35 33 , level System Diagram 1D2 46 1D1 47 1D3 44 1D4 43 1D5 41 1D6 40 1D7 38 , (Note 3) Input diode current IIK -50 Output diode current IOK ±50 DC output current
Toshiba
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marking CS TOSHIBA

Abstract: TVR2B TO SH IB A TOSHIBA FAST RECOVERY DIODE TVR2B,TVR2G,TVR2J SILICON DIFFUSED TYPE g TVR3R w , 5 - 4 0 -125 °C °C A JEDEC EIAJ TOSHIBA W eight : 0.3g 3-3C1A 1. ANODE 2. CATHODE UNIT I V V DO-41 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Peak Forward Voltage Repetitive , (Last Num ber of the C hristian Era) 961001EAA2 TOSHIBA is continually w orking to improve the , the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and
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marking CS TOSHIBA TVR2B

TOLD387S-EAD

Abstract: told387s Storage temperature Operating case temperature Laser forward current Laser reverse voltage Monitor diode , current Operating current Laser diode forward voltage RF input impedance Input data amplitude Supply , ratio Extinction ratio RF Return Loss (up to 7GHz) Monitor diode current Thermoelectric cooler current , (Unit: mm) 15.24 1.27 13 4- ø2.7 1 5.6 12.7 8.9 5.25 ø 4.1 10.65 5.8 GPO compatible , human eyes. Direct viewing should be avoided. OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America
Toshiba
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TOLD387S-EAD told387s toshiba VF S11 TOLD387S-EAD1 OC-192 STM-64 3682C-0203

told387s

Abstract: TOLD387S-EAD Monitor diode bias voltage V V Vss -6.5 0.3 Cross-point reference voltage Vref Vss , mA Operating current Iop 50 - 100 mA Laser diode forward voltage Vf - , - dB (4) RF Return Loss (up to 7GHz) S11 10 - - dB Monitor diode , V ø 4.1 5.8 10.65 V GPO compatible 20.83 26.04 30 Vpp °C s 31 max Unit , SUBSIDIARIES AND AFFILIATES Toshiba America Electronic Components, Inc. 010126 (X) Toshiba Electronics
Toshiba
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VSS24 OC-192 gpo 10 gb laser diode DP 704

TC74LCX16245AFT

Abstract: TC74LCX16245AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX16245AFT , 8 43 42 41 1DIR 2OE 2DIR 9 GND 10 1B7 11 40 39 38 1A1 1A4 1A2 1A3 , 30 29 28 27 26 25 1B2 5 43 6 41 8 40 9 38 11 12 37 36 35 , + 0.5 V (Note 3) Input diode current -50 IIK mA Output diode current IOK , ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Toshiba
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TC7SG126FE

Abstract: TC7SG126FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG126FE Bus Buffer , output voltage Input diode current VOUT -0.5 to 4.6 (Note 1) -0.5 to VCC + 0.5 (Note 2) V Output diode current IIK -20 mA DC output current IOK -20 (Note 3) mA DC VCC , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 13.1 1.0 15.1 1.65 to 1.95 6.6 9.2 1.0 9.9 2.3 to 2.7 4.1 5.4
Toshiba
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74ls652

Abstract: TC74HCT652AP TC74HCT652AP TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT652AP Octal , 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling , 53 5.5 26 38 48 4.5 22 33 41 5.5 20 30 37 4.5 27 41 51 5.5 24 37 46 4.5 24 35 44 5.5
Toshiba
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74ls652 TC74HCT652A 74LS652
Abstract: TC7WG126FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG126FU,TC7WG126FK , °C) Characteristics Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions , 4.7 3.1 2.5 30.5 14.9 8.2 6.1 4.1 3.4 24.0 11.8 6.8 5.1 3.4 2.5 26.6 13.0 7.4 5.5 3.7 3.0 36.4 17.9 , 4.6 3.4 25.0 11.4 7.9 4.9 4.1 35.8 15.3 10.5 5.9 4.6 Ta 40 to 85°C Min 1.0 1.0 1.0 1.0 1.0 1.0 Toshiba
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TC7SG126FU

Abstract: TC7SG126FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG126FU Bus Buffer , output voltage Input diode current VOUT -0.5 to 4.6 (Note 1) -0.5 to VCC + 0.5 (Note 2) V Output diode current IIK -20 mA DC output current IOK -20 (Note 3) mA DC VCC , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 8.8 13.1 1.0 15.1 1.65 to 1.95 6.6 9.2 1.0 9.9 2.3 to 2.7 4.1
Toshiba
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Abstract: TC7SG126FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG126FU Bus Buffer , °C) Characteristic Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , 29.0 14.5 8.2 6.0 4.0 3.3 22.7 10.9 5.9 4.5 3.1 2.4 25.3 11.9 6.5 4.9 3.3 2.5 37.7 17.1 8.8 6.6 4.1 3.1 , 6.8 4.4 3.4 30.7 13.1 9.2 5.4 4.1 Ta = -40 to 85°C Min 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Toshiba
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wz 02

Abstract: TC7WZ02FK TC7WZ02FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ02FU,TC7WZ02FK , voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling , 0.8 2.5 3.8 0.8 4.1 0.5 2.0 3.0 0.5 3.3 3.3 ± 0.3 1.2 3.1 4.6 , (typ.) 6 2009-09-09 TC7WZ02FU/FK RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its
Toshiba
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wz 02

TC74HCD

Abstract: TO SH IB A TC74HC564AP/AF,574AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON , failure of a TOSHIBA product could cause loss of human life, bodily injury or your designs, please ensure th a t TOSHIBA products are used w ithin specified operating ranges as set forth in the most please keep in mind the precautions and conditions set forth in th e TOSHIBA Semiconductor Reliability , granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION
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TC74HCD 564AP/AF TC74H C564A 50P20-P-300-1 DIP2Q-P-30Q-2

TC7SZ02F

Abstract: TC7SZ02FU TC7SZ02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ02F,TC7SZ02FU 2 , 1) -0.5 to VCC +0.5 (Note 2) DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±50 mA DC VCC/ground current , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 0.8 7.0 3.3 ± 0.3 0.5 2.3 4.5 0.5 4.7 0.5 1.9 3.9 0.5 4.1 3.3 ±
Toshiba
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TC7SG00FU

Abstract: TC7SG00FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG00FU 2 Input NAND , (Note 1) V DC output voltage VOUT Input diode current IIK -20 mA Output diode , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , 4.5 7.0 1.0 7.5 2.9 4.4 1.0 4.9 2.2 3.5 1.0 4.1 0.9 , : 0.006 g (typ.) 5 2009-09-24 TC7SG00FU RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and
Toshiba
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TC7SZ04FE

Abstract: TC7SZ04FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ04FE Inverter , output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling , 4.5 0.5 4.7 0.5 1.8 3.9 0.5 4.1 1.5 2.9 5.0 1.5 5.2 0.8 2.4 , PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve
Toshiba
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TC7SZ32F

Abstract: TC7SZ32FU TC7SZ32F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ32F, TC7SZ32FU , 1) -0.5 to VCC +0.5 (Note 2) V DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±50 mA DC VCC/ground , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and , 4.7 0.5 5.0 0.5 1.9 4.1 0.5 4.4 1.5 3.0 5.2 1.5 5.5 5.0 ± 0.5
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Abstract: TC74HC165AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC165AP , (Note 1) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol , the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods , 13 75 15 13 75 15 13 75 15 13 75 15 13 0 0 0 0 0 0 0 0 0 75 15 13 7 30 41 4.5 6.0 2.0 ns Toshiba
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DIP16-P-300-2
Abstract: TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOSî'²-H/Schottky Barrier Diode) TPCA8A09-H 1 , . Features (1) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) (2 , reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating , 51 A î'¥ 41 î'¥ VDD ≠24 V, VGS = 10 V, ID = 51 A î'¥ 18 î'¥ Switching time , 2 A, VGS = 0 V î'¥ -0.4 -0.6 V IDR = 51 A, VGS = 0 V Diode forward voltage Toshiba
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TOLD387S-EADW

Abstract: 10 gb laser diode .7 V Monitor diode (PIN-PD) bias voltage V V -6.5 0.3 Vref Vss-4.8 Vss , mA Operating current Iop 50 75 100 mA Laser diode forward voltage Vf - , - - dB (4) RF return Loss (up to 7GHz) S11 10 - - dB Monitor diode , mA 13 5.6 1 4- ø2.7 V 12.7 V 8.9 V 5.25 V V ø 4.1 5.8 , Toshiba America Electronic Components, Inc. 010126 (X) Toshiba Electronics Europe GmbH Toshiba
Toshiba
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TOLD387S-EADW laser diode toshiba
Abstract: TC7SG126FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG126FE Bus Buffer , °C) Characteristic Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , 2.4 25.3 11.9 6.5 4.9 3.3 2.5 37.7 17.1 8.8 6.6 4.1 3.1 Max 18.4 8.5 6.2 3.9 3.1 21.5 9.3 6.9 4.4 3.4 29.6 13.1 9.2 5.7 4.4 18.7 8.7 6.3 4.2 3.2 20.7 9.5 6.8 4.4 3.4 30.7 13.1 9.2 5.4 4.1 Ta = -40 Toshiba
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TC7WG126FC

Abstract: TC7WG126FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG126FC Dual Bus , 2) Input diode current IIK -20 Output diode current IOK -20 DC output current , reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and , 58.1 8.2 13.2 1.0 16.6 6.1 9.2 1.0 9.9 4.1 5.7 1.0 6.1 , 5.5 3.0 to 3.6 3.0 4.1 1.0 4.6 0.9 36.4 1.1 to 1.3
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TC7WG125FC

Abstract: TC7WG125FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG125FC Dual Bus , VIN -0.5 to 7.0 G125 V -0.5 to 4.6 (Note 1) DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±25 DC VCC , reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and , 4.1 5.7 1.0 6.1 3.4 4.4 1.0 4.8 0.9 24.0 1.1 to 1.3
Toshiba
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TC7SG00FE

Abstract: TC7SG00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG00FE 2-Input NAND , V -0.5 to 4.6 (Note 1) DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±25 mA DC VCC/ground current , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , Unit 1.1 to 1.3 CL = 10 pF, RL = 1 M VCC (V) 4.1 0.9 Power dissipation capacitance
Toshiba
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TC7WG34FC

Abstract: TC7WG34FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG34FC Triple , ) -0.5 to VCC+0.5 (Note2) DC output voltage VOUT V Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±25 ICC ±50 PD 150 , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 2.4 3.5 1.0 4.1 26.9 12.7 24.2 1.0 42.1 1.4 to 1.6
Toshiba
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TC7SG08FE

Abstract: TC7SG08FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG08FE 2-Input AND , (Note 1) DC output voltage VOUT Input diode current IIK -20 Output diode current , ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability , Unit 1.1 to 1.3 CL = 10 pF, RL = 1 M VCC (V) 4.1 0.9 Power dissipation capacitance , Dimensions Weight: 0.003 g (typ.) 5 2009-09-09 TC7SG08FE RESTRICTIONS ON PRODUCT USE · Toshiba
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TC7WG125FK

Abstract: TC7WG125FU TC7WG125FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG125FU , A1 2 7 G2 -0.5 to 4.6 (Note 1) DC output voltage VOUT Input diode current IIK -20 mA Y2 3 6 Y1 Output diode current IOK -20 (Note 3) mA GND 4 5 A2 DC , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling , 4.1 5.7 1.0 6.1 3.4 4.4 1.0 4.8 0.9 24.0 1.1 to 1.3
Toshiba
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TC7WG125FK

TC7SG125FU

Abstract: TC7SG125FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG125FU Bus Buffer , voltage Input diode current VOUT -0.5 to 4.6 (Note 1) -0.5 to VCC + 0.5 (Note 2) V Output diode current IIK -20 mA DC output current IOK -20 (Note 3) mA DC VCC/ground , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 4.1 5.4 1.0 5.8 3.0 to 3.6 4 4.5 1.65 to 1.95 CL = 30 pF, RL = 5 k 6.8
Toshiba
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Abstract: TC74HC165AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC165AFN 8 , Input diode current Output diode current DC output current DC VCC/ground current Power dissipation , the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods , 13 0 0 0 0 0 0 0 0 0 75 15 13 7 30 41 4.5 6.0 2.0 ns Minimum pulse width ( S/L ) tW (L , Min Max 95 19 16 190 38 33 205 41 35 170 34 29 Output transition time 4.5 Toshiba
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SOL16-P-150-1
Abstract: TC7SG86AFS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86AFS 2 , DC output voltage VOUT â'0.5 to VCC + 0.5 V Input diode current IIK â'20 mA Output diode current IOK ±20 (Note 1) mA DC output current IOUT ±25 mA DC VCC , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , ¯ 3.2 4.7 1.0 5.3 ⯠2.6 3.6 1.0 4.1 ⯠30.6 ⯠⯠⯠â Toshiba
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TC7SZ04FU

Abstract: TC7SZ04F TC7SZ04F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ04F,TC7SZ04FU , (Note 1) -0.5 to VCC+0.5 (Note 2) DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT 50 ICC ±50 PD , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , 4.1 1.5 2.9 5.0 1.5 5.2 5.0 ± 0.5 0.8 2.4 4.3 0.8 4.5 0 to 5.5
Toshiba
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Abstract: TC7PG34FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG34FU Dual , °C) Characteristic Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , 2.8 40.7 17.8 9.1 6.6 4.1 3.3 3 9 Max 23.2 10.2 7.0 4.4 3.5 26.0 11.4 7.5 4.8 3.8 33.9 14.3 9.8 6.2 , 12.0 7.6 4.9 4.1 44.5 13.6 7.7 5.5 4.4 64.1 17.4 10.2 6.6 5.2 pF pF ns Unit Note 13: CPD is Toshiba
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TC7SG125

Abstract: TC7SG125FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG125FU Bus Buffer , Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , 29.0 14.5 8.2 6.0 4.0 3.3 22.7 10.9 5.9 4.5 3.1 2.4 25.3 11.9 6.5 4.9 3.3 2.5 37.7 17.1 8.8 6.6 4.1 3.1 , 6.8 4.4 3.4 30.7 13.1 9.2 5.4 4.1 Ta = -40 to 85°C Min 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
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TC7SG125

TC74LCX16245FT

Abstract: TC74LCX16245FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX16245FT , 1OE 1B4 VCC 1B5 6 7 8 43 42 41 1DIR 2OE 2DIR 9 GND 10 1B7 11 40 39 , GND 2B3 16 33 32 31 30 29 28 27 26 25 1B2 5 43 6 41 8 40 9 38 , Input diode current -0.5 to 7.0 (Note 2) -0.5 to VCC + 0.5 (Note 3) IIK -50 V mA Output diode current IOK ±50 DC output current IOUT ±50 mA Power dissipation DC VCC
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TC7WG04FC

Abstract: tc7wg04 TC7WG04FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG04FC Triple , diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±25 , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and , 2.4 3.5 1.0 4.1 26.9 12.7 24.2 1.0 42.1 1.4 to 1.6 , PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve
Toshiba
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tc7wg04

TC7SZ00FU

Abstract: TC7SZ00F TC7SZ00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ00F, TC7SZ00FU , 3 V DC output voltage VOUT Input diode current IIK -20 Output diode current , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , 4.1 CL = 50 pF, 3.3 ± 0.3 1.5 2.9 5.0 1.5 5.2 RL = 500 Propagation delay , Weight: 0.006 g (typ.) 6 2009-09-09 TC7SZ00F/FU RESTRICTIONS ON PRODUCT USE · Toshiba
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VDE Certificate 40009302

Abstract: TLP751F The TOSHIBA TLP751F consists of a high-output GaAAs light emitting diode optically coupled to a , TLP751F TOSHIBA Photocoupler GaAAs Ired + Photo IC TLP751F Digital Logic Ground Isolation Line , listed in its datasheet. TOSHIBA 11-10C402 Weight: 0.54g (typ.) Unit: mm · · · · Switching speed: tpHL = 0.2 s (typ.) tpLH = 1.0 s (typ.) (RL = 4.1 k) TTL compatible UL recognized: UL1577, file no , contained herein is subject to change without notice. 20070701-EN GENERAL · TOSHIBA is continually
Toshiba
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VDE Certificate 40009302 TLP750F
Abstract: TC74HC165AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC165AP , voltage VOUT â'0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , ¯ 2.0 ⯠41 28 Test Condition Min Typ. Max Unit ⯠⯠4 8 ns , ¯ 60 165 ⯠205 4.5 ⯠19 33 ⯠41 6.0 ⯠16 28 ⯠35 Toshiba
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DIP16
Abstract: TC7SZ04F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ04F,TC7SZ04FU , Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , 2.0 0.8 0.5 0.5 1.5 0.8 Max 10.0 7.0 4.7 4.1 5.2 4.5 pF pF ns Unit Propagation delay time , .) 6 2011-02-24 TC7SZ04F/FU RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its Toshiba
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TC7SZ32FE

Abstract: TC7SZ32FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ32FE 2-Input OR Gate , VIN -0.5 to 6 V DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±50 mA DC VCC /ground current ICC , reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating , 4.7 0.5 1.9 3.9 0.5 4.1 1.5 3.0 5.0 1.5 5.2 0.8 2.4 4.3 0.8
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Abstract: TC7SZ32FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ32FE 2-Input OR Gate , V DC Input voltage VIN â'0.5 to 6 V DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±50 mA DC , ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability , 4.5 0.5 4.7 0.5 1.9 3.9 0.5 4.1 1.5 3.0 5.0 1.5 5.2 0.8 2.4 Toshiba
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Abstract: TC7SZ02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ02F, TC7SZ02FU , '0.5 to 6 (Note 1) â'0.5 to VCC +0.5 (Note 2) DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±50 mA , reviewing the Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ'/â'Derating Concept , 0.8 7.0 3.3 ± 0.3 0.5 2.3 4.5 0.5 4.7 0.5 1.9 3.9 0.5 4.1 3.3 Toshiba
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Abstract: TC7SZ34FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ34FE Non-Inverter , 6 V DC Input voltage VIN â'0.5 to 6 V DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±50 mA , ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability , 0.8 7.0 0.5 2.1 4.5 0.5 4.7 0.5 1.8 3.9 0.5 4.1 1.5 2.9 5.0 Toshiba
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AC151

Abstract: AC251 TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC74AC151P TC74AC251P TC74AC151P 8 , assumed by TOSHIBA for any infringements of patents or other rights of the third panics which may result , TOSHIBA or others. _ ® The products described in this document are strategic products subject to COCOM , authorities l»s of 1 TC74AC151P-1 TOSHIBA CORPORATION 1988.) This Material Copyrighted By Its Respective Manufacturer TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC74AC151P TC74AC251P ABSOLUTE MAXIMUM RATINGS
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AC151 AC251 TC74AC2S1P TC74AC151 TC74AC251 TC74AC153
Abstract: TC7SZ02FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ02FE 2-Input NOR , VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 4.1 3.3 ± 0.3 1.5 2.9 5.0 1.5 5.2 5.0 ± 0.5 0.8 2.4 4.3 0.8 4.5 , : 0.003 g (typ.) 5 2014-03-01 TC7SZ02FE RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation Toshiba
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TC7WG126FK

Abstract: TC7WG126FU TC7WG126FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG126FU , Input diode current IIK -20 mA Output diode current IOK -20 (Note 3) mA DC , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , 4.1 5.7 1.0 6.1 3.4 4.4 1.0 4.8 0.9 24.0 1.1 to 1.3 , 4.9 1.0 5.5 3.0 to 3.6 3.0 4.1 1.0 4.6 0.9 36.4 1.1
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Abstract: TC7WG125FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG125FU,TC7WG125FK , voltage DC output voltage Input diode current Output diode current DC output current DC VCC / GND current , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions , Ta 40 to 85°C Max Typ. 18.3 9.4 5.5 4.2 2.8 2.3 21.2 10.7 6.1 4.7 3.1 2.5 30.5 14.9 8.2 6.1 4.1 , 12.0 8.1 5.3 3.9 25.0 11.4 7.9 4.9 4.1 1.0 1.0 1.0 1.0 1.0 41.9 13.4 8.5 5.5 4.6 ns Toshiba
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Abstract: TC7SG126FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG126FU Bus Buffer , 4.6 (Note 1) V DC output voltage VOUT Input diode current IIK â'20 Output diode , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 2.3 to 2.7 ⯠4.1 5.4 1.0 5.8 3.0 to 3.6 4 1.0 3.0 to 3.6 CL = 30 pF , 10 pF, RL = 1 MΩ Unit ⯠3.1 4.1 1.0 4.5 ns ns 2014-03-01 TC7SG126FU Toshiba
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Abstract: TC7SZ34FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ34FE Non-Inverter , Input diode current Output diode current DC output current DC VCC/ground current Power dissipation , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions , 6.5 4.5 3.9 5.0 4.3 Ta = -40 to 85°C Min 1.0 0.8 0.5 0.5 1.5 0.8 Max 10.0 7.0 4.7 4.1 5.2 4.5 , PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve Toshiba
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ic 74ls245 pdf datasheet

Abstract: ic 74ls245 TC74HCT245AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT245AP , VIN -0.5 to VCC + 0.5 V DC output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT , reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and , capacitance CI/O An, Bn 13 pF Power dissipation capacitance CPD 41
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TC74HCT245AF 74LS245 ic 74ls245 pdf datasheet ic 74ls245 TC74HCT245A

TC7SZ05F

Abstract: TC7SZ05FU TC7SZ05F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ05F,TC7SZ05FU , (Note 1) DC output voltage VOUT Input diode current IIK -20 Output diode current , reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating , 2.4 5.0 0.8 5.2 0.5 1.9 4.3 0.5 4.5 1.5 4.1 10.5 1.5 11.0 , 2009-09-17 TC7SZ05F/FU RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and
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TC7SZ08FU

Abstract: TC7SZ08F TC7SZ08F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ08F, TC7SZ08FU , (Note 1) V DC output voltage VOUT Input diode current IIK -20 Output diode current , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 7.5 3.3 ± 0.3 0.5 2.6 4.7 0.5 5.0 5.0 ± 0.5 tpHL 0.5 2.2 4.1 0.5 , TC7SZ08F/FU RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
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Abstract: TC7SZ02FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ02FE 2-Input NOR , -0.5 to 6 V DC Input voltage VIN -0.5 to 6 V DC output voltage VOUT Input diode current IIK -20 Output diode current IOK -20 DC output current IOUT ±50 mA , the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling , 0.3 0.5 2.3 4.5 0.5 4.7 5.0 ± 0.5 0.5 1.9 3.9 0.5 4.1 3.3 ± 0.3 Toshiba
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Abstract: TC7WZ02FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ02FU, TC7WZ02FK , +0.5 (Note 2) V DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±50 ICC ±50 PD 300 (SM8)200 , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 5.8 0.8 2.5 3.8 0.8 4.1 0.5 2.0 3.0 0.5 3.3 3.3 ± 0.3 1.2 3.1 Toshiba
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Abstract: TC7SZ32MX TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ32MX 2-Input OR , (Note 1) â'0.5 to VCC +0.5 (Note 2) DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±50 mA DC VCC , reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ , 0.8 3.0 6.5 0.8 7.0 0.5 2.4 4.5 0.5 4.7 0.5 1.9 3.9 0.5 4.1 Toshiba
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DIODE 39c

Abstract: 1S2777 9097250 TOSHIBA , ¿2.65±0,2- ¿0.75- î 2 S a JEDEC DO-41 EIAJ TOSHIBA 3-3C1A lF(AV)"~Ta MAX , ,4 (J T3 ¡3 0.3 s o IK 0.2 u w V 0.1 TOSHIBA 3-3B1A 'F(AV)~Ta max HI Resistive
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1S2777 1S2775 1S2776 125X3 DIODE 39c TVR1D 251C DO-15
Abstract: TC7SZ34F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ34F, TC7SZ34FU , V DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 0.5 1.8 3.9 0.5 4.1 1.5 2.9 5.0 1.5 5.2 0.8 2.4 4.3 0.8 4.5 , (typ.) 6 2014-03-01 TC7SZ34F/FU RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its Toshiba
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TC74LCX374F

Abstract: TC74LCX374FT TOSHIBA TC74LCX374F/FW/FT PIN ASSIGNMENT w OE 1 QO 21 DO 31 D1 41 Q1 51 Q2 61 D2 71 D3 Q3 91 GND 10I , TOSHIBA TC74LCX374F/FW/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC , .) 0.08g (Typ.) 961001EBA2 0 TOSHIBA is continually working to improve the quality and the reliability of , , when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to
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TC74LCX374F TC74LCX374FW TC74LCX374FT TC74LCX374 74AC/VHC/HC/F/ALS/LS TSSOP20-P-0044-0
Abstract: TC7SZ04FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ04FE Inverter , output voltage VOUT Input diode current IIK â'20 Output diode current IOK â , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , 4.5 0.5 4.7 0.5 1.8 3.9 0.5 4.1 1.5 2.9 5.0 1.5 5.2 0.8 2.4 , g (typ.) 5 2014-03-01 TC7SZ04FE RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and Toshiba
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2SK2846

Abstract: 2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2846 , TOSHIBA Single pulse avalanche energy (Note 2) EAS 93 mJ Weight: 0.54 g (typ , reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating , not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A Note 3 , voltage (diode) VDSF IDR = 2 A, VGS = 0 V - - -1.5 V Reverse recovery time trr
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Abstract: TC7SG125FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG125FU Bus Buffer , 4.6 (Note 1) DC output voltage VOUT Input diode current IIK â'20 Output diode , operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor , 2.3 to 2.7 ⯠4.1 5.4 1.0 5.8 3.0 to 3.6 ⯠3.1 4.1 1.0 4.5 CL = , '¢ Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to Toshiba
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Abstract: TC7SG86FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG86FU 2 , '0.5 to 7.0 V â'0.5 to 4.6 (Note 1) DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±25 mA DC VCC/ground current , Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ'/â'Derating Concept and Methodsâ , ¯ ⯠⯠1.1 to 1.3 ⯠11.7 20.9 1.0 39.1 3.4 4.1 1.0 4.7 â Toshiba
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Abstract: TC7SZ00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ00F, TC7SZ00FU , voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC , reviewing the Toshiba Semiconductor Reliability Handbook (â'Handling Precautionsâ'/Derating Concept and , ± 0.3 0.5 2.4 4.5 0.5 4.7 5.0 ± 0.5 0.5 2.0 3.9 0.5 4.1 CL = 50 pF , USE â'¢ Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve Toshiba
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Abstract: TC7SZ34FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ34FE Non-Inverter , Input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground , ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability , 1.5 0.8 Max 10.0 7.0 4.7 4.1 5.2 4.5 pF pF ns Unit Propagation delay time tpLH tpHL , .) 5 2011-02-24 TC7SZ34FE RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its Toshiba
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Abstract: TC7SZ34F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ34F, TC7SZ34FU , V â'0.5 to 6 (Note1) DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±50 DC VCC/ground current ICC , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 0.5 4.1 1.5 2.9 5.0 1.5 5.2 0.8 2.4 4.3 0.8 4.5 0 to 5.5 Power Toshiba
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k2865

Abstract: Toshiba 2SK2865 2SK2865 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV) 2SK2865 Chopper , . GATE DRAIN HEAT SINK 3. SOURSE 1 3 JEDEC JEITA SC-64 TOSHIBA 2-7B1B , 0.6 MAX. 1.05 MAX. 1 2 3 reliability upon reviewing the Toshiba Semiconductor Reliability , 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 1 3 JEDEC JEITA TOSHIBA 2-7J1B Weight: 0.36 g
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k2865 Toshiba 2SK2865 2SK2865 Equivalent k2865 Parameters
Abstract: TC7SG126FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG126FE Bus Buffer , â'0.5 to 4.6 (Note 1) V DC output voltage VOUT Input diode current IIK â'20 Output diode current IOK â'20 DC output current IOUT ±25 DC VCC/ground current ICC , the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba , 1.65 to 1.95 ⯠6.6 9.2 1.0 9.9 2.3 to 2.7 ⯠4.1 5.4 1.0 5.8 3.0 Toshiba
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fr2t diode

Abstract: VRRM1000 TOSHIBA TFR2NJFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T STROBO , . CATHODE JEDEC DO-41 EIAJ TOSHIBA 3-3C1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 0.3g , Year (Last Number of the Christian Era) Cathode Mark 000707EAA2 0 TOSHIBA is continually working to , the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of , failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In
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VRRM1000

k2865

Abstract: 2SK2865 2SK2865 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV) 2SK2865 Chopper , TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the , appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions , : VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse , - - IDRP t = 100 s - - 8 A Forward voltage (diode) VDSF IDR = 2 A
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K28*5 k286
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