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toshiba diode "do-41"

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Abstract: noise LLD DO-35 DO-35 DO-41 LRP LLD MHD TOSHIBA 02CZ series 02DZ series 04AZ series 05AZ , Leadless 3Pin Mini Mold 3Pin Small Mini Mold ROHM GSR MSR GSD MSD TO-220 TOSHIBA DO-41 , RB401 RB401 RB400D RB400D MA10701 MA10701 MA10703 MA10703 1SS349 1SS349 DO-41 SB05-05CP SB05-05CP MA720 MA720 CMPAK CMPAK-4 URP , be discontinued in `00 PACKAGE CROSS REFERENCE HITACHI DO-41 DO-41Mod DO-35 DO-35 MHD TO-220FM , ) MATSUSHITA DO-41 DO-35 DO-35 DO-34 DO-34 TO-220F TO-220D Leadless Mini 3P Mini 5P S Mini 3P S Mini 4P Mini 2P ... Original
datasheet

3 pages,
39.75 Kb

diode cross reference 1s2076 04az MA151WK toshiba diode do-35 DA323 1S2473 equivalent hitachi zener do-35 1ss202 1SS316 1s1555 diode ISS376 1SS153 DA323K DO-35 1S1555 DO-35 abstract
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Abstract: DO-41 1SS267 1SS267 1S1555 1S1555, 1S1588 1S1588 1SS104 1SS104 1S1553 1S1553, 1S1554 1S1554 1S2092 1S2092, 1S2460 1S2460 1S2461 1S2461, 1SS240 1SS240 DO-35 DO-35 1SS2462 1SS2462, 1SS247 1SS247 , series HZK-L series HZS-L series Package Code MPAK URP MHO DO-38 DO-38 05AZ series DO-41 LRP LLD MHD , 1SS378 1SS378 1SS367/373 1SS367/373 U10FWJ2C48M U10FWJ2C48M LDPAK TO-220FM EK09 AK09 DO-41 ERA81-004 ERA81-004 EK04 AK04 DINS4 1GWJ42 1GWJ42 1GWJ43 1GWJ43 , un m Package Code DO-35 DO-35 MHD DO-35 DO-35 MHD UMD MHD, UMD DO-41 DO-41 52mm 26mm 26mm Taping dimension 52mm TA* TAX TD TDX TE* TJ TK* TN* 1000 5000 5000 2500 2500 2500 ! i Tape width DO-41 mod TQ S ... OCR Scan
datasheet

5 pages,
326.12 Kb

fujitsu siemens m series matsua ERP 11EQS04 cross reference sanken SE014 05AZ 1SS153 1SS211 1SS252 "cross reference" DA323K U1FWJ49 FC54 NEC DO-35 diode cross reference 1s1555 datasheet abstract
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Abstract: © < 0 1. P iNODE 2. CATHODE JEDEC EIAJ TOSHIBA W eight : 0.3g DO-41 - 3-3C1A ELECTRICAL , SILICON DIFFUSED TYPE FAST RECOVERY DIODE - TVR1B/G/J U n it in mm O TV APPLICATIONS. (FAST RECOVERY) · · · Average Forward Current : I f (AV) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : Vr r m = 100V~600V Reverse Recovery Time : tr r =2.0^s MAXIMUM RATING CHARACTERISTIC Repetitive Peak Reverse Voltage TVR1B TVR1G TVR1J SYMBOL VRRM I f (AV) ! f SM T] Tstü Average Forward ... OCR Scan
datasheet

2 pages,
40.36 Kb

TVR1B datasheet abstract
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Abstract: 9097250 TOSHIBA CD I SCRETE/OPTO) 90D 16494 TOSHIBA {DISCRETE/0PT0> Diodes "TO DE I^OTTSSO 001b4TM 7 D 13 T-O-b'O? Switching Diode (DO-35 DO-35) VB(V) lo(MA) 25(30) 50 70 75 150 1N4152 1N4152 1N4150 1N4150 1N4151 1N4151 1N4153 1N4153 1N914 1N914, A, B 1N916 1N916, A, B 1N4149 1N4149 1N4446 1N4446 1N4447 1N4447 1N4448 1N4448 1N4449 1N4449 200 1N4150 1N4150 1N4606 1N4606 1N4148 1N4148 Surface Mount Diode V„(V) WMA) 30 50 70 75 150 DLN4152 DLN4152 DLN4153 DLN4153 DLN914 DLN914, A, B DLN916 DLN916, A, B DLN4149 DLN4149 DLN4446 DLN4446 DLN4447 DLN4447 DLN4448 DLN4448 DLN4449 DLN4449 200 DLN4148 DLN4148 Rectifiers General Purpose Rectifier (DO-41, Glass ... OCR Scan
datasheet

1 pages,
36.78 Kb

1N4149 MAC525-8 1N4148 surface mount DIODE 1N4001 1N4001 general diode purpose ic203 MAC525-4 SCR TO-92 C106D scr C106B IC203A C122B scr 2n6396 IN5060 datasheet abstract
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Abstract: Rectifiers General Purpose Rectifier (DO-41, GEass) ^ _ ' ' - 1,0 3.0 50 1N4001 1N4001 100 1N4002 1N4002 , 9097250 TOSHIBA CDI S C R E T E /O P T O ) 9 0D 16494 /3 TOSHIBA -CDISCRETE/OPTOJ DE § OlkMTM 7 Diodes Switching Diode (DO-35 DO-35) VB(V) 2 5 (3 0 ) lo(MA) \ 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149 1N 4446 1 N 4447 1N 4448 1N 4449 1N 4148 150 1N4152 1N4152 1N4150 1N4150 1N 4151 1N 4153 200 1N4150 1N4150 1N 4606 Surface M ount Diode V,(V) 30 lo(MA) DLN914 DLN914, A, B DLN916 DLN916 ... OCR Scan
datasheet

1 pages,
40.88 Kb

SCR 1 c106d 1N5059 diode 1N4004 toshiba in 5062 diode 1n4007 toshiba 1N4007 toshiba datasheet abstract
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Abstract: CATHODE If (AV) I2t IFSM Tj Tstg DO-41 ELECTRICAL CHARACTERISTICS (Ta = 25°C) EIAJ TOSHIBA , SILICON DIFFUSED TYPE FAST RECOVERY DIODE TFR1N/T U n it in m m STRO BO FLASHER APPLICATIONS. (FAST RECOVERY) · · · Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time IF(AV) =0-5A V r r m = 1000, 1500V tj*j*-10//S -10//S M A X IM U M RATING CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current I2t Limit Value (t = l~10ms) Peak One Cycle Surge ... OCR Scan
datasheet

2 pages,
48.12 Kb

datasheet abstract
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Abstract: -1 2 5 UNIT V A A2s A °C °C mo.7 5 i l. ANODE 2. CATHODE JEDEC EIAJ TOSHIBA W e ig h t : 0.3g DO-41 - 3-3C1A CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery , SILICON DIFFUSED TYPE FAST RECOVERY DIODE STROBO FLASHER APPLICATIONS. (FAST RECOVERY) U n it in m m · Average Forward Current · Repetitive Peak Reverse Voltage · Reverse Recovery Time M A X IM U M RATING IF(AV) = °-5A V r r m = 1000, 1500V tj-j* - 4 / ¿ s SYMBOL CHARACTERISTIC ... OCR Scan
datasheet

2 pages,
47.78 Kb

fr2t fr2t diode datasheet abstract
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Abstract: TOSHIBA 1. ANODE 2. CATHODE DO-41 - 3-3C1A W e ig h t : 0.3g ELECTRICAL CHARACTERISTICS (Ta = , SILICON DIFFUSED TYPE FAST RECOVERY DIODE TV APPLICATIONS. (FAST RECOVERY) U nit in mm · · · Average Forward C urrent Repetitive Peak Reverse Voltage Reverse Recovery Time Ip (AV) = 0.5 A (Ta = 50°C) V r r m = 100V~600V trr = 5~20,us M A X IM U M RATING CHARACTERISTIC TVR2B Repetitive Peak Reverse Voltage TVR2G TVR2J TVR2B Reverse Voltage (DC) TVR2G TVR2J Average Forward Current ... OCR Scan
datasheet

2 pages,
38.02 Kb

TVR2B datasheet abstract
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Abstract: o in 00.75 , z H O ID oj 1. ANODE 2. CATHODE JEDEC DO-41 EIAJ TOSHIBA , TOSHIBA TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR2B, TVR2G, TVR2J , ) Cathode Mark 961001EAA2 961001EAA2 0 TOSHIBA is continually working to improve the quality and the reliability of , , when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to ... OCR Scan
datasheet

2 pages,
93.36 Kb

VR2B toshiba diode do-41 datasheet abstract
datasheet frame
Abstract: Repetitive Peak Reverse Current Reverse Recovery Time MARKING DO-41 JEDEC EIAJ TOSHIBA 3-3C1A (Ta=25°C , T O SH IB A TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2NJFR2T TFR7N STROBO , TFR2N TFR2T 961001EAA2 961001EAA2 TOSHIBA is continually w orking to improve the quality and the reliability of , , when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations In which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to ... OCR Scan
datasheet

2 pages,
54.15 Kb

datasheet abstract
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Hitachi 16/10/2000 881 Kb XLS dio200e.xls
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