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ISL61851JIBZ-T Intersil Corporation Dual USB Port Power Supply Controller - Covering the Industrial Temperature Range of -40°C to +85°C; DFN10, DFN8, SOIC8; Temp Range: -40° to 85°C
ISL78302ARNWZ-T Intersil Corporation Dual LDO with Low Noise, High Performance and Low IQ; DFN10; Temp Range: -40° to 105°C
ISL4089IBZ-T7A Intersil Corporation DC-Restored Video Amplifier; SOIC8; Temp Range: -40° to 85°C
ISL88001IE22Z-T7A Intersil Corporation Ultra Low Power 3 Ld Voltage Supervisors in SC-70 and SOT-23 Packages; SC703, SOT3; Temp Range: -40° to 85°C
ISL31493EIUZ Intersil Corporation ±60V Fault Protected, 5V, RS-485/RS-422 Transceivers with ±25V Common Mode Range; MSOP10, SOIC14; Temp Range: -40° to 85°C
TW2866-LC1-CR Intersil Corporation 4-Channel Video Decoders and Audio Codecs and Video Encoder For Security Application; LQFP128; Temp Range: -40° to 85°C

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Part : DIL32/SDIP64-1 ZIF TOSHIBA-BM1 Supplier : Dataman Programmers Manufacturer : Newark element14 Stock : - Best Price : $299.00 Price Each : $299.00
Part : MDK-TOSHIBA Supplier : ARM Manufacturer : element14 Asia-Pacific Stock : - Best Price : $987.1760 Price Each : $987.1760
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toshiba 32k*8 sram

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Refresh DRAM EDO 256Kx16 SRAM 128Kx8, low power SRAM Low Power 32Kx8 SRAM Low Power 32Kx8, 2.5~3.6Volts SRAM Low Power 32Kx8 SRAM Low power 32kx8 SRAM 128Kx8, 2.5~3.6 Volts SRAM 256KX8, 2.5~3.6 , DRAM EDO 1Mx16, 3.3V, 1K refresh SDRAM 1Mx16, 166Mhz SRAM High Speed 128Kx8 SRAM Low Power 32Kx8 SRAM 128Kx8, 2.5~3.6 Volts SRAM High Speed 32Kx8, 3.3V FLASH 128Kx8, Uniform Sector FLASH 1MX16 , ~3.6Volts SRAM 128Kx16, 1.8~3V SRAM 128Kx16, 2.5~3.6Volts SRAM 512Kx8, 2.5~3.6V SRAM Low Power 32Kx8 AMIC Technology
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AS4C256K16FO-60JC UM611024 UM62256EM-70LL UM62256EV-70LL UM62256EM KM416S1020BTG10 um62256e PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL
Abstract: power SRAM Low Power 32Kx8 SRAM 128Kx8, 2.5~3.6 Volts SRAM 256KX8, 2.5~3.6 Volts SRAM 128Kx16, 2.5 , ~3.6 Volts SRAM 256KX8, 2.5~3.6 Volts SRAM Low power 32kx8 SRAM Low Power 32Kx8 SRAM Low power 32kx8 SRAM Low power 32kx8 SRAM 512Kx8, 2.5~3.6V SRAM 128Kx8, 2.5~3.6 Volts SRAM 256KX8, 2.5~3.6 , Power 32Kx8 SRAM 128Kx8, low power SRAM 512Kx8, 2.5~3.6V SRAM 256Kx16, 2.5~3.6V SRAM 512Kx16, 55ns , SRAM High Speed 128Kx8 SRAM Low Power 32Kx8 SRAM 128Kx36 LV TTL DBA 128K x 36 FT ZeBL Sync SRAM AMIC Technology
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um61256 hynix hy57v281620 hy57v641620 cross reference 256k x8 SRAM WINBOND Serial flash cross reference Samsung EOL PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 28F160S3/B3/C3
Abstract: 46 Standard SRAM n TOSHIBA LOW POWER STATIC RAM Capacity config. 55ns TC55257DPL/DFL /DFTL , Availability of each product to be confirmed through the local office. 47 Standard SRAM n TOSHIBA LOW , office. : Under Development 48 Standard SRAM n TOSHIBA LOW POWER STATIC RAM Process , TC518129(128Kx8) PSRAM TC518128(128Kx8) SRAM TC551001, TC55V1001(128Kx8) SRAM TC55257(32Kx8) A18 A16 A14 , than standard process Toshiba 4M 0.5u CMOS (4Tr + 2R cell) · same technology as Toshiba 1M SRAM `B' Toshiba
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toshiba toggle mode nand 551664 TC551001 equivalent TC518512 Toggle DDR NAND flash sgs-thomson power supply 64M128M 100MH 200MH 500/600MH 800MH 400MH
Abstract: 256Kx16 SRAM 128Kx8, low power SRAM Low Power 32Kx8 SRAM 128Kx8, 2.5~3.6 Volts SRAM 256KX8, 2.5~3.6 , Low Power 32Kx8 SRAM Low Power 32Kx8 SRAM Low Power 32Kx8 SRAM 512Kx8, 2.5~3.6V SRAM 128Kx8, 2.5 , 4Mx16 SDRAM 4Mx16 SDRAM 4Mx16 SDRAM 4Mx16 SDRAM 2Mx32 SRAM Low Power 32Kx8 SRAM 128Kx8, low power , High Speed 128Kx8 SRAM Low Power 32Kx8 SRAM 128Kx36 LV TTL DBA 128K x 36 FT ZeBL Sync SRAM SRAM , PL Sync Burst SRAM SRAM 128Kx8, low power SRAM Low Power 32Kx8 SRAM 128Kx8, 2.5~3.6 Volts SRAM AMIC Technology
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PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010
Abstract: x8 PSEUDO SRAM Density 1M Org. 12 8K X8 Samsung KM681001 IDT71024 Hitachi HM658128 Toshiba , KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 Toshiba , Samsung 4 KM424C64 KM424C256 KM424C257 KM428C128 Toshiba NEC (¿PD42264 Hitachi H M 53461 HM , M5M442256 M5M482128 X eg SA M SUNG Electronics MEMORY ICs 3.3 SRAM FUNCTION GUIDE Slow SRAM Density Org. 64K 256K 8Kx8 32Kx8 Samsung KM6264B/BUBL-L KM62256ALI KM62256A/AUAL-L HM62256/UL-L -
OCR Scan
TC51256 TC51258 TC51464 TC511000 TC531000AP M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 M5M51000 KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466
Abstract: , 1K Refresh DRAM EDO 256Kx16 SRAM 128Kx8, low power SRAM Low Power 32Kx8 SRAM 128Kx8, 2.5~3.6 , ~3.6 Volts SRAM 256KX8, 2.5~3.6 Volts SRAM Low power 32kx8 SRAM Low power 32kx8 SRAM Low power 32kx8 SRAM 512Kx8, 2.5~3.6V SRAM 128Kx8, 2.5~3.6 Volts SRAM 256KX8, 2.5~3.6 Volts SDRAM 8Mx16 SDRAM , 16Mx 16 SDRAM 4Mx16 SDRAM 4Mx16 SDRAM 4Mx16 SDRAM 2Mx32 SDRAM 4Mx16 SRAM Low Power 32Kx8 SRAM , SDRAM 2Mx32 SDRAM 2Mx32 SRAM High Speed 128Kx8 SRAM Low Power 32Kx8 SRAM 256Kx18 SRAM 128Kx36 LV AMIC Technology
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SRAM 64KX8 5V TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 IDT72V245 k4s561632 AM29DLV1XD AM29F010B AM29F040B AM29F400B AM29F800 AM29F800B
Abstract: CROSS REFERENCE GUIDE Density 256K Toshiba NEC uPD41264 uPD42264 Hitachi HM53461 (2) Ti , 54 ELECTRONICS MEMORY ICs 3.2 Static RAM CROSS REFERENCE GUIDE Low power SRAM Den. 64K 256K 512K 1M 4M Org. 8Kx8 32Kx8 64Kx8 128Kx8 512K 8 SAMSUNG KM6264BL/BL-L KM62256CL/CL-L , -17B-LL CXK58257A-L/A-LL TOSHIBA TC6565AL/AL-L TC55257BLÆL-L MITSUBISHI M5M5165/L M5M5255B-L/B-LL p f¡ NEC , TC554002 M5M51008/L M5M54008L/LL jtPD431000AL/ALL /i P0434000/L/LL Low power SRAM Den. 1M Org -
OCR Scan
KM628512 93C46L BR93C56A 93C56L TC55B4257 UPD23C4000 atmel 93c66 Hitachi SRAM cross reference MT42C4064 PD41264 TMS4461 KM428C64 KM424C256A TC524256
Abstract: Samsung KM424C64 Micron MT42C4064 Density 256K CROSS REFERENCE GUIDE Toshiba p I* NEC uPD41264 , Full 256KX32 KM4216C256 54 ELECTRONICS MEMORY ICs 3.2 Static RAM Low power SRAM Den. Org. SAM SUNG HITACHI SONY CROSS REFERENCE GUIDE TOSHIBA MITSUBISHI NEC 64K 256K 512K 1M 4M 8Kx8 32Kx8 64Kx8 128K 8 512K 8 KM6264BL/BL-L KM62256CUCL-L KM68512AL7AL-L KM681000BL/BL-L , ¡PD434000/L/LL Low power SRAM Den. 1M Org. 128K 8 SAM SUNG KM658128A/AL/AL-L HITACHI 1 TSOHIBA j NEC OKI -
OCR Scan
KM28C64B 93c46 atmel sony Cross Reference HN62404P tc5588 oki cross reference NEC video 256KX4 TC524256A TC524256B TC524257 PD42273 HM534251
Abstract: Density 64 K BiCMOS SRAM Org. 16K X 4 16K X 4 16K X 4 8Kx8 64 K X 4 32Kx8 Samsung KM 64B65 KM , 41C 40 02 K M 44C 10 00 KM 44C1002 Toshiba Hitachi Fujitsu NEC Oki M SM 3764 1 1 , KMM5401000A KM M 5402000A Organization 256 K 256 K 1M 1M X X X X Toshiba TH M 82500A TH M 92500A TH M , Samsung KM424C64 KM 424C256 KM 424C257 KM 428C128 Toshiba NEC t í PD 42264 Hitachi HM 53461 , 42274 X T M S4 4 C 2 5 1 M 5M 44225 6 M5M 482128 X 3 .4 3.4.1 SRA M Slow SRAM Samsung -
OCR Scan
41C256 41C1000 fujitsu 814100 TC 55464 toshiba HN62304 816b 658128 41C257 41C258 41C464 41C466
Abstract: 5 1 2 K M 4 16 C 2 56 K M 4 18 C 2 56 K M 4 1C 1 6 00 0 K M 4 4C 4 0 00 Toshiba T C 51256 T C , 2 0 00 KM M 5362000 KM M 5401000 KM M 5402000 Toshiba TH M 82500 TH M 92500 TH M 81000 TH M , CROSS REFERENCE GUIDE D ensity 256K Org. 64K X 4 Sam sung K M 4 24 C 6 4 Toshiba NEC , 53 8 1 23 TM S 48C 121 M 5 M 48 2 1 28 TM S 44C 251 M 5 M 44 2 2 56 3.4 Static RAM Slow SRAM , TOSHIBA TC5565AL TC55257L MITSUBISHI M5M5165 M5M5265 i- NEC (iPD 4364U L-L (iPD43256AL . -
OCR Scan
HN62308BP TC55B8128 TC534000AF KM23C4000AG hitachi cross TC551632 TC511001 TC514101 514170B 514280B B0141O2 PD41256
Abstract: LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim , for Lighting Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro , / A 256K / 32Kx8 CS18LV02563 series BS62LV256 series IS62LV256AL K6T0808V1D HY62KT08081E CY62256VN series M5M5256D 256K / 32Kx8 CS18LV02565 series BS62LV256 series , IS62WV5128ALL / BLL 28K6T4008U1B/C HY62U8400A CY62148EV30 series R1LV0408C Low Power SRAM Den -
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MBI5024 MBI5026 TB62706 A6276 MBI5167 DM115B dm13c macroblock MBI5024 MBI6030 CS18LV4096 K4S641632H CS8816 CS8826 DM134 DM135
Abstract: 44C1000 KM 44C1002 KM 48C512 KM 49C512 KM 416C256 KM 418C256 KM 41C16000 KM 44C4000 Toshiba TC 51256 TC , bit Toshiba T H M 82500 TH M 92500 T H M 81000 T H M 91000 T H M 32250 0 Hitachi H B 56025608 H , m su n g KM 424C64 KM 424C256 KM 424C257 KM 428C128 Toshiba CRO SS REFERENCE GUIDE Density 256 , (xPD42275 M 5 M 44225 6 M 5M 48212 8 3.4 Static RAM Slow SRAM Cross Reference Density 64 K 256K 512K 1M 4M Org. 8Kx8 32Kx8 64Kx8 128K X 8 512K x 8 SA M SU N G KM6264BL/BL-L KM62256AL/AL-L KM 62256B U -
OCR Scan
424170 NEC CY70199 TC5116100 oki msm NM9306 MB81417 41C1002 44C256 44C258 41C4000 41C4002 TC511002
Abstract: X X X X X X X X X X X X X X X And more to come later this year.with 32Kx8 SRAM , SRAM External Chip Selects PMU EasyFLASHTM 7 Pin Compatible adding CPLD If additional , Concurrent/Boot Flash ISP ISP via JTAG Scratch PAD Loader SRAM I/O Ports Flash , Port E) I/O PORT I/O PORT SCRATCH PAD SRAM Memory, PLD, & Configuration SIMPLE PLD , 6=Triple Flash Array SRAM Size 0=No RAM 1=16Kb 2=32Kb 3=64Kb 4=128Kb 5=256Kb 6=512Kb WaferScale Integration
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Z280 MPU 28C64 EPROM programmer 82C55 NEC D935G free circuit Dvd eprom programmer 80C198 1-877-WSI-PSDS
Abstract: Low Power & Normal SRAM Cross Reference Guide Part No. Density (bits) Org. Voltage Access , *.DIP/S:SOP W24L257,S 256K 32Kx8 3.3V 70 LL, LE 28 *.DIP/S:SOP W24257AS,Q 256K 32Kx8 5V CYPRESS UTRON IDT MOSEL CYPRESS ICSI(ISSI) UTRON BSI 35 - 28 S:SOP/Q:STSOP W24257,S,Q 256K 32Kx8 5V 70 LL, LE 28 *.DIP/S:SOP/Q:STSOP W24256S 256K 32Kx8 5V 70 L, LL 28 S:SOP W24256S W24512AS W24LO1S,T 256K 512K Winbond Electronics
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CY6264 IDT7164L V62C51864 CY62256V K6T080C1D UT621024 CYPRESS SAMSUNG CROSS REFERENCE sram cross reference SRAM SAMSUNG winbond Cross Reference DIP SOP W2465 W24L11S W24100 UT6264
Abstract: . TMS4C1024 TMS44C256 Toshiba TC511000 TC514256 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu , HYB51426 Texas Instr. TMS4C1024 TMS44C256 Toshiba TC511000 TC514256 4Meg 4Mx1 1Mx4 , HYB514171 HYB514265 Texas Instr. TMS44100 TMS444000 TMS45160 TMS45169 Toshiba TC514100 , HYB5117400 HYB5117405 - - Texas Instr. TMS417400 TMS417409 - - Toshiba TC5117400 , - Texas Instr. TMS418160 - TMS418169 Page 2 New Page 1 Toshiba TC5118160 -
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HY514260 HY514264 msm-561 msm561 M5M418165 M5M418160 TC5117405 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256
Abstract: 3.3V Fast Asynchronous 32K×8 32K×8 32K×16 256K×16 128K×8 512K×16 1M×16 512K×8 , ® Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 4M 8M , . ALLIANCE SEMICONDUCTOR 1 ® SRAM (Industrial temperature range available on all SRAM products) 5V Fast Asynchronous SRAM Density Org Alliance part no. Speed (ns) Packages Status 64K 8Kx8 AS7C164 12/15/20 PDIP (28), SOJ (28) Production 256K 32Kx8 AS7C256 10/12 Alliance Semiconductor
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NEC 2581 CSP-48 AS7C33256PFS18A KM6865 TR-81090 la 4620 Q4--2000 8/256K 8/512K B-2800 SE-597
Abstract: ('25« AS7CI02S AS7C1024 AS7C164 AS7C2 5c AS7C 5 32 32f \S/C256 AS7C5 12 Description 8K*8 32K.X8 32K , u4Kx8 3;.Kx8 Ì V 128Kx8 156Kx4 128Kx8 32Kx8 U K x % 3V Toshiba CXK59288 CXK77V321 1 C X K 5 8 1i 20 , Industry (mss rei ti t n l r A h u lu s in Fast SRAM Vendor Code CY7CIÛ06 CY7C18S CY7CI88 , burst 8Kx8 32Kx32 flow-thru 8Kx 8 W in bond 32Kx8 32Kx9 256KX4 32Kx9 3 iK x8 12Kx8 3V 128Kx 8 256KX4 , AS7C1024 AS7C2S6 AS7C32S6 Description 25bK*4 8Kx8 3:.Kx9 32Kx8 NEC I2 8 X x 8 32Kx8 3V 128KX8 C PG Ï 8Kx8 3 -
OCR Scan
MB82005 MTSC2568 AS7CI64 7405M IC SRAM 8K X 8 TC55328 CY7C199 CY7CI009 CY7C10I9 MB8298 MB8299
Abstract: FLASH TIMER/CNTRS INTERRUPT MCU OR SRAM DECODE FLASH CONTROL Risky to Commit No CPLDs , Storage Scratch Pad Battery Backed SRAM Multi-Function I/O Ports Programmable Peripherals · , GENERAL PURPOSE SRAM CPLD ' PLD ' DECODE Peripheral Functions SECURITY FEATURE , : · EEPROM, FLASH, or Scratch Pad SRAM Return to Main Menu wsi98web2a.ppt 9 , SRAM GENERAL PURPOSE ISP CPLD Peripheral Functions SECURITY FEATURE PMU ' PLD ' WaferScale Integration
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datasheet 80C31-1 intel microprocessor 80C196 assembly language intel 80c196 microcontroller motor flashlink D813 80c31 rs232
Abstract: DECODE PLD E2PROM ISP JTAG SCRATCH PAD ZPLD INPUT BUS LOADER SRAM , (EPROM, EEPROM, Flash) SRAM Programmable Logic MCU Interface and more. MCU FLASH EEPROM PSD CPLD SRAM .Greater than 25 Million PSDs Shipped JTAG ISP Power Management , TIMER/CNTRS INTERRUPT ROMed E2PROM OR MCU SRAM DECODE FLASH CONTROL Risky to Commit , , 9902Awebflashdetail 6 Flash 80C51 EEPROM 80C251 EPROM 80C51XA SRAM 68HC11 WaferScale Integration
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814F4 EEPROM COPIER circuit INTEL END OF LIFE 80C196 32 pin eprom to eprom copier circuit mitsubishi serial flash loader memory mapping of motorola 68HC11 mc 68000 microprocessor 9902A DK800 814F6 813F4 813F5
Abstract: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V 2.4 ~5.5V , ) EC / EI = TSOP-2 DI / DC = DIE 256K Configuration BSI BS62XV256-25 32Kx8 BS62UV256 , CYPRESS CY62256V18-20 CY62256V25-10 CY62256V-70 Operating Voltage TOSHIBA 1.6~2.0V 2.3~2.7V Brilliance Semiconductor
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BS62UV1024-15 BS62LV1024-70 BS62UV256-15 TC55257DI-L-70 BS62LV4005-70 TC55V400-70 tbb1458b K6F8008S2M K6Y0808C1D BS62XV1024-25 BS62XV2000-25 BS62UV2000-15
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