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CS4349-DZZR Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, PDSO24, 4.40 MM, LEAD FREE, MO-153, TSSOP-24 visit Digikey Buy
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CS4360-DZZ Cirrus Logic D/A Converter, 1 Func, Serial Input Loading, PDSO28, 4.40 MM, LEAD FREE, MO-153, TSSOP-28 visit Digikey Buy
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to+106+bc239

Catalog Datasheet MFG & Type PDF Document Tags

BC238 NPN transistor download datasheet

Abstract: lowest noise audio NPN Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B , Circuits Of Television Receivers. DESCRIPTION SYMBOL BC237 BC238 BC239 UNITS Collector , NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic , CONDITION Collector Emitter Voltage IC=2mA,IB=0 VCEO BC237 BC238 BC239 EmitterBase Voltage VEBO IE=100uA, IC=0 BC237 BC238,BC239 CollectorCut off Current BC238, BC239 ICES MIN TYP MAX
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BC238 NPN transistor download datasheet lowest noise audio NPN transistor bc237 bc337 BC239 NPN transistor download datasheet TRANSISTOR W2 bc238 npn C-120

238b

Abstract: BC238 BC237. BC239 Characteristics (TA=25 oC unless otherwise noted) Symbol DC Current Gain at VCE , =0.5mA at IC=100mA, IB=5mA BC237A BC237B,238B BC237C,238C,239C BC237 BC239 BC237A BC237B,238B , =2mA, IB=0 BC239 Emitter Base Breakdown Voltage at IE=100uA, IC=0 BC237 BC238 BC239 Collector Cutoff Current at VCE=50V, VBE=0 BC237 at VCE=30V, VBE=0 BC238 BC239 o at VCE=50V, VBE=0, TA=125 C BC237 o at VCE=30V, VBE=0, TA=125 C BC238 BC239 Min. Typ. Max. Unit hFE hFE hFE hFE
Semtech Electronics
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BC239C 238b transistor 238B BC238 NPN transistor transistor bc237 transistor bc239C 100MH

transistor bc237 bc337

Abstract: BC238 NPN transistor download datasheet Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K For Complementary , Collector-Base Voltage BC238 VCBO 30 BC239 Collector-Emitter Voltage BC238 VCEO 20 1. COLLECTOR 3. EMITTER V TO-92 6 BC238 VEBO 5 V BC239 5 BC237 100 BC238 IC 100 BC239 mA 50 BC237 Emitter Current 3 20 BC237 Collector Current 2 45 BC239 Emitter-Base Voltage 1 2. BASE 30 BC237 V F C
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BC238 datasheet transistor bc238 bc238 equivalent BC237 equivalent transistor bc237 datasheet bc239 application BC237/8/9 BC307/308/309

BC237

Abstract: BC238B BC237,A,B,C BC238B,C BC239,C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector­Emitter Voltage VCEO 45 25 25 Vdc , BC239 V(BR)CEO 45 25 25 - - - - - - V Emitter­Base Breakdown Voltage (IE = 100 mA, IC = 0) BC237 BC238 BC239 V(BR)EBO 6.0 5.0 5.0 - - - - - - V BC238 BC239 - - 0.2 0.2 15 15 nA (VCE = 50 V, VBE = 0) BC237 -
ON Semiconductor
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BC237B/2388/2398 BC238B npn Bc238B, NPN 226AA BC237/D

BC237

Abstract: bc238 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 BC239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW , = 125°C (VCE = 50 V, VBE = 0) TA = 125°C BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 - , /239C BC237/BC238/BC239 BC237/BC239 BC238 VCE(sat) hFE - - - - 120 120 200 380 - - - - - 90 150 , BC238 BC239 BC237 BC238 BC239 Cobo Cibo NF BC239 - (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz
ON Semiconductor
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bc237v

C237B

Abstract: BC237 W /'C »C T-a?-}? BC237, A, B, C BC238, A, B, C BC239, B, C CASE 29-04, STYLE 17 TO-92 (TO , ) C ollector C u to ff C urrent (VcE = 3 0 V, V b e = 0) (V ce = 5 0 BC237 BC238 BC239 BC 237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 8C 237 V(BR)CE0 45 25 25 6 5 5 0 .2 0 0 .2 0 0 .2 0 0 .2 0 0 .2 0 0 , C 23 7 B /2 3 8 B /2 3 9 B B C 23 7 C /2 38 C /2 3 9C (IC = 2 mA, V ce = 5 V) BC237 BC238 BC239 B C , SC XSTRS/R F 12E D | fc.3t.72S4 Q0öSö3fc. 1 | BC237, A, B, C, BC238, A, B, C, BC239, B, C
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C237B bc239b

BC238B

Abstract: BC237 BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS , BC238 BC239 V(BR)CEO 45 25 25 - - - - - - V Emitter ­ Base Breakdown Voltage (IE = 100 mA, IC = 0) BC237 BC238 BC239 V(BR)EBO 6.0 5.0 5.0 - - - - - - V BC238 BC239 - - 0.2 0.2 15 15 nA (VCE = 50 V, VBE = 0) BC237 - 0.2 15 (VCE = 30 V, VBE = 0) TA = 125°C BC238 BC239 - - 0.2 0.2 4.0 4.0
Motorola
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BC238 MOTOROLA BC238B MOTOROLA bc237 motorola

BC237

Abstract: 238B BC238/239 15 BC237A 150 BC237C/238C/239C 270 120 800 BC239 120 800 BC237A , =0.5mA 0.83 IC=100mA,IB=5mA 1.05 0.7 0.55 VCE=5V, IC=2mA 100 BC238 120 BC239 140 , 240 BC239 150 Collector output capacitance Cob 280 VCB=10V, IE=0, f , 10 BC239 2 4 f=1kHZ, Rs=2K Noise figure NF BC239 VCE=5V, Ic=0.2mA, dB
Jiangsu Changjiang Electronics Technology
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TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c bc2376 BC237/238/239 BC237B/238B BC237B/238 BC237/239

bc237v

Abstract: bc238 100 350 2.8 1.0 8.0 ­55 to +150 BC239 25 30 5.0 Unit Vdc Vdc Vdc mAdc BC237,A,B,C BC238B,C BC239C , ) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 - , (sat) BC237/BC238/BC239 BC237/BC239 BC238 VBE(sat) - - VBE(on) - 0.55 - 0.5 0.62 0.83 - 0.7 - 0.6 , CHARACTERISTICS Current­Gain - Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC237 BC238 BC239
ON Semiconductor
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238C

Abstract: BC238 Case RWC 125 °C/W BC237,A,B,C BC238,B,C BC239,C CASE 29-04, STYLE 17 TO-92 {TO-226AA) 1 Collector 2 , Collector-Emitter Breakdown Voltage (IC = 2.0 mA, is = Or BC237 BC238 BC239 V(BR)CEO 45 25 25 V Emitter-Base Breakdown Voltage Oe = 100 (iA, Ic = 0) BC237 BC238 BC239 V(BR)EBO 6 5 5 V Collector Cutoff Current _ (VCE = 30 V, VBE = 0) (VcE = 50 V, VBE = 0) BC238 BC239 BC237 ICES 0.20 0.20 0.20 15 15 15 nA (VCE = 30 V, VBE = 0)TA = 125°C " (VCE = 50 V, VBE = 0) Ta = 1 25°C BC238 BC239 BC237 0.20 0.20 0.20 4 4 4
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BC307 BC308C 238C 25CC JE125 BC309 BC309B

Transistor BC239c

Abstract: BC239 ) Dated : 07/12/2002 BC237. BC239 Characteristics (TA=25 oC unless otherwise noted) Symbol DC , Voltage at IC=10mA, IB=0.5mA at IC=100mA, IB=5mA BC237A BC237B,238B BC237C,238C,239C BC237 BC239 , BC237 BC238 at IC=2mA, IB=0 BC239 Emitter Base Breakdown Voltage at IE=100uA, IC=0 BC237 BC238 BC239 Collector Cutoff Current at VCE=50V, VBE=0 BC237 at VCE=30V, VBE=0 BC238 BC239 o at VCE=50V, VBE=0, TA=125 C BC237 o at VCE=30V, VBE=0, TA=125 C BC238 BC239 Min. Typ. Max. Unit
Semtech Electronics
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TRANSISTOR BC237a

bc237

Abstract: bc238 BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max , F F 1 2 3 Collector-Base Voltage BC238 BC239 BC237 VCBO 30 30 45 V M , Collector-Emitter Voltage BC238 BC239 BC237 VCEO 20 20 6 V TO-92 Emitter-Base Voltage BC238 BC239 BC237 VEBO 5 5 100 V Collector Current BC238 BC239 BC237 IC 100 50 -100 mA Emitter Current BC238 BC239 IE -50 -50 mA Collector Power Dissipation Junction Temperature
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BC237 complementary 120120A transistor bc239

transistor bc237

Abstract: bc238 . FEATURES · High Voltage : BC237 VCECJ=45V. · Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (Vce=6V, Ic= 0 , BC237/8/9 MAXIMUM RATING (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BC237 BC238 BC239 BC237 ^ BC238 BC239 BC237 BC238 BC239 BC237 BC238 BC239 BC237 BC238 BC239 SYMBOL VcBO Collector-Emitter , Voltage Transition Frequency Collector Output Capacitance Noise Figure B C 23^| BC238 BC239 BC237 BC238 BC239 BC237 BC238 BC239 BC237 BC238 BC239 SYMBOL TEST CONDITION Vcb=50V, lg=0 IcBO hFE Vce=5V, Ic=2mA Ic
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BC237

Abstract: BC238 : BC239 NF=0.2dB(Typ.), 3dB(Max.) (Vce=6V, Ic=0.1mA, f=lkHz). â'¢ For Complementary With PNP type BC307 , BC237 VcBO 50 V BC238 30 BC239 30 Collector-Emitter Voltage BC237 VcEO 45 V BC238 20 BC239 20 Emitter-Base Voltage BC237 Vebo 6 V BC238 5 BC239 5 Collector Current BC237 Ic 100 mA BC238 100 BC239 50 Emitter Current BC237 Ie -100 mA BC238 -100 BC239 -50 , - 800 BC239 180 - 800 Collector - Emitter Saturation Voltage BC237 VcE(sat) Ic=100mA, IB
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BC239 NPN transistor BC238-5 bc2378

transistor bc238

Abstract: BC239 NPN transistor SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package , . DESCRIPTION SYMBOL BC237 BC238 BC239 UNITS Collector -Emitter Voltage VCEO 45 25 , TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS , IC=2mA,IB=0 VCEO BC237 BC238 BC239 EmitterBase Voltage VEBO IE=100uA, IC=0 BC237 BC238,BC239 CollectorCut off Current BC238, BC239 ICES MIN TYP MAX UNITS 45 25 25 V V V 6 5
Continental Device India
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bc238a 15KHZ

amd 2904

Abstract: BC237A , Junction to Case RflJC 125 °C/W BC237,A,B,C BC238,B,C BC239,C CASE 29-04, STYLE 17 TO-92 (TO-226AA) 1 , Breakdown Voltage (IC = 2.0 mA, IB = 0) BC237 BC238 BC239 VfBRjCEO 45 25 25 V Emitter-Base Breakdown Voltage (IE = 100 nA, Ic = Oj BC237 BC238 BC239 V(BR)£BO 6 5 5 V Collector Cutoff Current (VCE = 30 V, VBE = 0| (VCE = 50 V, VBE = 0) BC238 BC239 BC237 ices 0.20 0.20 0.20 15 1 5 15 nA (VCE = 30 V, VBE = 0| Tft = 1 25 |VCE = 50 V, VBE = 0) TA = 125,>C BC238 BC239 BC237 0.20 0.20 0.20 4 4 4 liA ON
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amd 2904

BC237

Abstract: BC237 complementary BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES ·Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max , Voltage BC238 BC239 BC237 Collector-Emitter Voltage BC238 BC239 BC237 Emitter-Base Voltage BC238 BC239 BC237 Collector Current BC238 BC239 BC237 Emitter Current BC238 BC239 Collector Power Dissipation , ) BC238 BC239 BC237 Collector-Emitter Saturation Voltage IC=100mA, IB=5mA BC238 BC239 BC237 Base-Emitter , BC238 BC239 VCE=6V, IC=0.1mA NF Rg=10k, f=1kHz IC=100mA, IC=5mA BC238 BC239 VBE(ON) fT Cob VBE(sat) IC
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BC238B

Abstract: BC239 BC238B,C BC239,C CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max , mA, lB = 0) BC238 25 â'" â'" BC239 25 â'" â'" Emitter-Base Breakdown Voltage BC237 V(BR)EBO 6.0 â'" â'" V (IE = 100hA, IC = 0) BC238 5.0 â'" â'" BC239 5.0 â'" â'" Collector Cutoff Current Ices (VCE = 30 V, VBE = 0) BC238 â'" 0.2 15 nA BC239 â'" 0.2 15 (VCE = 50 V, VBE = 0) BC237 â'" 0.2 15 (VCE = 30 V, VBE = 0)TA=125°C BC238 â'" 0.2 4.0 ha BC239 â'" 0.2 4.0 (VCE = 50 V, VBE = 0
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bc237

Abstract: BC237B /239 BC237A BC237B/238B BC237C/238C/239C VCE=5V, IC=2mA DC current gain hFE(2) BC237 BC239 BC237A , VBE VCE=5V, IC=2mA VCE=5V, IC=100mA VCE=3V,IC=0.5mA,f=100MHz BC237 BC238 Transition frequency fT BC239 VCE=5V,IC=10mA,f=100MHz BC237 BC238 BC239 Collector output capacitance Emitter-base capacitance Cob , =5V, Ic=0.2mA, f=1kHZ, Rs=2K, f=200Hz BC237 BC238 BC239 2 2 2 10 10 4 BC239 2 4 dB 8 150 150 150 0.55 0.83
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BC239

Abstract: BC237 BC237,238, A,B,C BC239, B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For , 45 50 6.0 BC238 25 30 5.0 BC239 25 30 5.0 100 350 UNITS V V V mA mW 2.8 , VCEO TEST CONDITION IC=2mA, IB=0 MIN 45 25 V V VEBO BC237 BC238/BC239 IE=10uA, IC=0 BC237 BC238/BC239 6.0 5.0 V V ICES BC238/BC239 VCE=30V, VBE=0 15 nA BC237 VCE=50V, VBE=0 15 nA BC238/BC239 VCE=30V, VBE=0, Ta=125ºC 4.0 uA BC237 VCE=50V, VBE=0, Ta
Continental Device India
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TYP120 TYP150 silicon planar epitaxial transistors CDIL BC237 TYP270 BC238/BC239 201205E
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