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LM3S5R31-IBA80-C3 Texas Instruments Stellaris Microcontroller 103-NFBGA visit Texas Instruments
TCM1050P Texas Instruments Dual Transient-Voltage Suppressor 8-PDIP visit Texas Instruments
AD-1377-103-CRIMP-LOCATOR (994855-000) TE Connectivity (994855-000) AD-1377-103-CRIMP-LOCATOR visit TE Connectivity

thyristor st 103

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thyristor st 103

Abstract: mcc95 16 101 4bE D 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s « Thyristor Modules Thyristor/Diode Modules MCC95 i TAV = 2 x 1 1 6 a MCD95 vR R M= 400- I 600 v 1 i > >> V , 95-14lo8 M C C 95-16Ì08 Symbol ItRM 8i IfR M S Itavmt Ifavm ItSMi IpSM Te st conditions T vj=TV jm Tc , Symbol Ir> ¡d vT, v F V-ro rT, rF Rthjc (DC) R ^ k (DC) Te st conditions Tyj- T vjm I V r- VflBMi V , , if =300A; TV J=25°C For power-loss calculations only (TV J=125aC) per thyristor(diode); DC current
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thyristor st 103 mcc95 16 101 v06v MCC90 MCR-SL-S-1/thyristor st 103 MCC95-12IO1 CD95-04 CD95-06 CD95-08 CD95-12 CD95-14 MCC95-12

thyristor st 103

Abstract: 700-HF MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR) CR3AMZ LOW POWER, STROBE USE , MITSUBISHI W^ ELECTRIC MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR) CR3AMZ LOW POWER, STROBE , ON-STATE CHARACTERISTICS 103 GATE CHARACTERISTICS 7 5 3 2 102 7 5 3 2 101 7 5 3 2 10° -Ta = 25 , SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR) CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS , '" < < o o 103 7 5 4 3 2 102 7 5 4 3 2 101 â'"I-1-1-1-1â'" TYPICAL EXAMPLE
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700-HF CR3AMZ p80n thyristor tt 170 n 70011F

thyristor TAG 103 X

Abstract: thyristor st 103 CMTH BONDING WOULD BE K H IO K D K T K X N ALL MATING SURFACES IN ST A L L A T IO N S CO O LIN G , ) 18 10.3 18 10.3 30 -230 400 -5 - Oto 160° - 30 to 160° -99 - 0 to + 70 - -20 to + 85 - 1500 for 1 min. 50 50 10.3 10.3 100 100 10.3 10.3 FUSING It is , Frequency Interference (RFI). Thus, unsuppressed Phase Angle thyristor or triac power systems inherently generate RFI, rising to maximum at mid-phase angle. High impedance Phase Angle controlled thyristor trigger
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thyristor TAG 103 X Thyristor TAG 3 phase MCB installation drawing thyristor TAG 103 triac tag f1 phase angle control using IC X10282 001TU

thyristor st 103

Abstract: MCR-SL-S-1/thyristor st 103 DU 60/14 DU - SKFT 40 SKFT60 SKFH 40 SKFH 60 f Thyristor data1* - - 60/10 DT - 60/12 DT 60/12 DU - SKFT 40 SKFH 401) Symbol Conditions SEMIPACK® 1 Fast Thyristor , . per thyristor/per module 0,43/0,215 ° c /w 2)- â'¢ â'¢ Heat transfer through ceramic , m 6 6 101 tp *>2 103 P* 10« Fig. 1 a Rated peak on-state current vs. pulse duration 3 I I I I H ill 1 SKFT 40 ~2 * S KFH 403 I I I I l Mil T s 100 °c ça s 103 A - 1 â
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thyristor st 103

Abstract: MITSUBISHI SEMICONDUCTOR (THYRISTOR) CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS , MITSUBISHI SEMICONDUCTOR (THYRISTOR) CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE , CHARACTERISTICS 103 7 5 RATED SURGE ON-STATE CURRENT "1â' " - 1 c = 2 5 cC -â'" rTT TT 3 2 , 3 2 100 1 2 3 4 ON- ST AT E V O LTA G E (V) C O N D U C TIO N TIM E (C YC LE S A T 60H z) F e b .1999 ♦ MrïSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR (THYRISTOR
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speed control of motor

Abstract: thyristor st 103  â  hbhmbmhbm â â â â â â  â â â â ih HHH MMH hhhh THYRISTORS P4J.3P4J-Z 3 A MOLD THYRISTOR DESCRIPTION The 3P4J and 3P4J-Z are P-gate all diffused mold type THYRISTOR granted average on-state current 3 Amps (Tc = 103 °C), with rated voltages up to 400 Volts. FEATURES  , On-state Current >T(AV) 3 (Tc = 103 °C, 0 = 180° Single Phase half wave) A Fig. 11 'T(RSM) 4.0 Surge , / \| \ /PGR /| = 1V >0 Hz ySlO V \ s V < Dut % \ V /PG( AV)=< D.2 W ST
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speed control of motor rgk 20/2 3p4j automotive thyristor 1988M

thyristor st 103

Abstract: fa st thyristor/diode m odule in an e lectrically isolated package. The se m iconductors are are p re , © · · · · M ITEL MAS110S Fast Turn-off Asymmetric Thyristor/Diode Module DS4200-4.0 April , description o f p a rt num ber see 'Ordering Information'. Thyristor Current Ratings Symbol ' t (AV , 75°C Max. 110 175 Units A A ^T(RMS) 1/9 MAS110S Thyristor Surge Ratings Symbol , sine;' T case = 125°C vr Max. 2.0 20.0 x 103 Units kA A 2s I2t = o% v drm
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DS4200-3 AS110S

three phase bridge inverter in 180 degree and 120

Abstract: single phase half controlled full wave bridge rec to the maximum RMS rating of the thyristor in question. The designer quickly finds that in a great , less. This can be seen from Figure 2. Thus, the thyristor current ratings for rectangular waveform , , i.e., the reciprocal of the supply frequency). R#jc = Thermal resistance of the thyristor, junction-to-case. Zeit * = Transient thermal impedance of the thyristor for the time duration of one current pulse , ° Twelve Phase Quadruple Zig-Zas (single-way) 30° The caiculation of thyristor current rating for
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AN-305 three phase bridge inverter in 180 degree and 120 single phase half controlled full wave bridge rec transformer calculation formula three phase bridge inverter 120 degree ac to dc inverter by thyristor power semiconductor 1973

thyristor st 103

Abstract: 2N4199 characteristics â'" are given to facilitate "worst case" design. MOTOROLA THYRISTOR DEVICE DATA 3-31 MOTOROLA , . motorola thyristor device data 3-32 1 MOTOROLA SC (DIODES/OPTO) 2SE 1> â  b3b72SS GOSOTIM b â  2N4199 , k 10 It I, PULSE REPETITION RATE (Hz) MOTOROLA THYRISTOR DEVICE DATA 3-33 MOTOROLA SC (DIODES , - 7.75 â'¢ io;3) 0.27 ♦ 7.75 â  10'3 -0.27] I G « 93.S1°C ¿T(tsl - ( 1000 I0.032 + (1 - 5.25 , MOTOROLA THYRISTOR DEVICE DATA 3-34 MOTOROLA SC (DIODES/OPTO) ESE D â  2N4199 thru 2N4204 SWITCHING
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2N4200 2N4201 2N4202 2N4203 2N4201 JAN GFM 85A 2N419 1N4937 25CC 2IM4204

BT 816 triac

Abstract: ky 202 h thyristor T 508/200 K T 508/300 K T 508/400 K T 710 K T 711 K T 712 K T 713 K T 714 S T 103/1 ST 103/2 ST 103/3 S T 103/4 ST 103/5 ST 103/6 ST 108/2 ST 108/3 ST 108/4 ST 108/5 S T 108/6 TO,8 NO,6 A00 TO,8 M A00 , therstellung: Druckerei Miirkische Volkssfcimme Potsdam R cd ak tio n ssch lu tt: 20. A u g u st 1981 , Vorwort genannten Literatur zu entnehmen. 2.1.1. D er T hyristor Der Thyristor ist ein Gleichrichter , symmetrischer oder bidirektionaler Thyristor genannt, ist ein 2seitig steuerbarer Gleichrichter. Er eignet sich
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BT 816 triac ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor

str 5707

Abstract: 2SC 8050 STR Sanken transistor regulator SUM Sanken switching power supply TF Thyristor, reverse blocking (SCR) TFD Thyristor, reverse-blocking with built-in avalanche diode TM Thyristor , REGION Allegro MicroSystems, Inc. 14 Hughes St. - Suite B205 Irvine, CA 92618 TEL: (949) 460-2003 , ) 755-6757 CONNECTICUT Kitchen & Kutchin 154 State St. North Haven, CT 06473 TEL: (203) 239-0212 FAX , MARYLAND TAI Corporation 10010 Junction Drive - Suite 103 Annapolis Junction, MD 20701 TEL: (301
Allegro MicroSystems
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str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 MS-001 MS-010 MS-011 MS-018 MO-136BJ MS-012

TRANSISTOR SMD 613

Abstract: TRANSISTOR SMD DK QC Thyristor, reverse blocking (SCR) Thyristor, reverse-blocking with built-in avalanche diode Thyristor , OFFICES & MANUFACTURERS REPRESENTATIVES U.S. Sales Offices Allegro MicroSystems, Inc. 10 Hughes St , . (Distribution Office) 306-1C South Main St. #126 Ann Arbor, MI 48104 TEL: (734) 426-9390 FAX: (734) 426-9447 , Kitchen & Kutchin 154 State St. North Haven, CT 06473 TEL: (203) 239-0212 FAX: (203) 234-9108 Delaware TAI , TAI Corp. 10010 Junction Drive #103 Annapolis Junction, MD 20701 TEL: (301) 490-3660 FAX: (301
Allegro MicroSystems
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TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 diode zener smd sg 64 MS-013 A8920SLR MS-001AB AMS-127B

2SD 4206

Abstract: str 5707 SDH Sanken 16-terminal power SMD TF Thyristor, reverse blocking (SCR) SDI Sanken 16-terminal power SMD TFD Thyristor, reverse-blocking with SDK Sanken stepper-motor driver built-in avalanche diode I SE Sanken error amplifier IC TM Thyristor, bidirectional , REPRESENTATIVES U.S. Sales Offices Allegro MicroSystems, Inc. 10 Hughes St., Suite A206 Irvine, CA 92618 TEL , MicroSystems, Inc. (Distribution Office) 306-1C South Main St. #126 Ann Arbor, MI 48104 TEL: (734) 426-9390
Allegro MicroSystems
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2SD 4206 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757

thyristor st 103

Abstract: Thyristor BT 102 BT 1 5 1 -6 5 0 R ST AN DARD Glass Passivated thyristor in a plastic envelope, intended for , ST I CS Cha ra c t e rist ic Sym bol 1.T1 2.T2 3.G 125 -40-150 TA=25 T e st Condit , 102 10 n 103 f = 50 Hz. Fig 2. Non-repetitive peak on-state current as a function of , 001aaa956 103 ITSM dlT/dt limit (A) 102 IT ITSM t tp Tj initial = 25 °C max 10 , (V/µs) 2 103 (1) (2) 102 1 0 â'50 10 0 50 100 0 150 50
HSIN Semiconductor
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Thyristor BT 102 thyristor BT 200 BT 139 F applications note SC-46

2N 6565 Thyristor

Abstract: ht 30 diac (Isolated) Current Rating for TCR 22 = 1.5 A Current Rating for EC 103 = 0.8 A Current Rating for T 106 = 4 A (IGT = 200 µA) 107 = 4 A (IGT = 500 µA) Current Rating for 2N 5xxx = 0.8 A EC 103 D 1 , , Inc. Thyristor Product Catalog Description of Part Numbers SCR S Device Type S = Non-sensitive , DO-35 ST = Diac Trigger in DO-214 32 91 Lead Form Dimensions DO-35 Voltage Rating 32 = 27 V to , 32 V to 36 V 36A / 5762 = 32 V to 40 V 36B = 34 V to 38 V ©2004 Littelfuse, Inc. Thyristor Product
Littelfuse
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2N 6565 Thyristor ht 30 diac triac t 218 isolated TO220 thyristor triac diac rectifier 2N5xxx DO-15X
Abstract: 4böfc.22b 0 0 0 1 1 7 2 T 4bE D I X Y S IIXY T z S -23 CORP â¡IXYS Thyristor Modules MCC19 â TAV = 2 x 1 8 A Iâ"¢ 1 VRRM = 600-1600 V Ii > > > iI > > > 700 900 , =125°C) fW r ,â'ž k (DC) (d o per thyristor{diode); DC current per m odule per thyristor(diode , T vj=25°C; V d=1/2V(jrm Ig=0.45A; di ¡d r , 1.62 1.65 C onstants fo r Z ^ « calculation: i 10» 10* 10' 10" 10' 10» 103 -
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CC19-06 MCC19-08 MCC19-12 MCC19-14 MCC19-16 C19-06

thyristor TT 46 N

Abstract: TT 105 N 12 Phase Control Thyristor Modules Type VDRM Itrmsm ITSM Jpdt lTAVM/tc V(TO) rT (di/dt) cr tq (dv , Phase control thyristor modules continued Type Vdrm 'trmsm Itsm J izdt ITAVM^C V(TO> lT (di/dt)cr tq , tvj max ^vj max 747-6 747-6 sin VRRM+100V â'¢103 Baseplate = 25 mm TT , screw plug max. 12 / M6x15 24-1 A 2,8x0,8 Ull 3 ^ j I St I 11 AK K A ' 'KIGI K2 G2 AK K , Manufacturer Phase control thyristor modules continued Type Vdrm 'trmsm 'tsm J i2dt ITAVM/U V(TO) It (di/dt
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thyristor TT 46 N TT 105 N 12 thyristor TT 430 N 22 tt 104 n 12 TT 46 N 800 thyristor tt 162 n 12

thyristor TAG 103 X

Abstract: Dimensions In m m (1m m «0,0394â') R w c (DC) R* j k (DC) Q* per per per per thyristor(d»ode); D C current m odule thyristor(dìoóe); D C current m odule T w»125 °C; lf=60A; -di/dt , Surge overload current lFSM: C re st value, t: duration S O 10' Fig. 2 fi2dt versus tim e , ) ! 0.46 0.48 0.50 0.54 0.58 C o n sta n ts for Z,uK calculation: i 10! 103 Rtin
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MDD95 MDD95-04N1 MDD95-06N1 MDD95-08N1 MOD95-12N1 MDD95-14N1

2N1778A

Abstract: thyristor st 103 125-600 Volts Description Silicon Controlled Rectifiers (SCR) are reverse blocking triode thyristor , 100 150 200 250 300 400 500 600 V < V V V V V Semitronics, 64 Commercial St , 150°C, V gd 0.2 Volts V D = V Semitronics, 64 Commercial St. Freeport, NY 11520 , ! £ io 1 102 103 10-3 1 0 -2 MSTANTANEOUS ON-STATE CURRENT, h . (AMPERES , FLOW, t, (|tMC) Semitronics, 64 Commercial St. Freeport, NY 11520 Tel (516) 623-9400 / Fax (516
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2N1778A triode rn 1016 2N1770A-2N2619A MIL-PRF-19500/168 2N1770A 2N1771A 2N1772A 2N1773A

thyristor diode module IRK E78996

Abstract: IRK E78996 701819-303ac modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations , threshold voltage 0.89 1.03 0.97 VT(TO)2High level value of threshold voltage 1.12 1.07 , 0.020 Units 0.033 K/W MAGN-A-paks Suitable for Current Source Inverters Thyristor VDRM , : 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit
International Rectifier
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thyristor diode module IRK E78996 IRK E78996 701819-303ac IRK E78996 IRK THYRISTOR THYRISTOR MODULE E78996 scr INVERTER 94V0 I27102 E78996 I27900
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