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ISL36411DRZ-T7 Intersil Corporation Quad Lane Extender; QFN46; Temp Range: 0° to 70° visit Intersil Buy
QLX4300SIQSR Intersil Corporation Quad Lane Extender; QFN46; Temp Range: 0° to 70° visit Intersil Buy
QLX4270RIQT7 Intersil Corporation DisplayPort Lane Extender; QFN46; Temp Range: 0° to 70° visit Intersil Buy
QLX4270RIQSR Intersil Corporation DisplayPort Lane Extender; QFN46; Temp Range: 0° to 70° visit Intersil Buy
ISL35111DRZ-TS Intersil Corporation 11.1Gb/s Driver; QFN16; Temp Range: 0° to 70° visit Intersil Buy
ISL35411DRZ-TS Intersil Corporation Quad Driver; QFN46; Temp Range: 0° to 70° visit Intersil Buy

t1 ee16

Catalog Datasheet MFG & Type PDF Document Tags

TNY 264 equivalent

Abstract: LTV817D POWER SUPPLY C6 2.2 nF R8 100 50 V L1 1.5 mH D1 1N4007 T1 EE16 C3 1 nF 1 kV R1 10 , 1N4007 C6 1 nF 50V R7 18 C3 1 nF 1 kV R1 270 k RF1 10 2W L2 3.3 µH T1 EE16 9 D7 1N5822 3 R3 28.7 k 1% FB R8 820 C7 1000 µF 16 V D6 1N4148 R6 , VAC T1 EE25 *Optional components TinySwitch-III U1 TNY278PN PI , POWER SUPPLY C8 3.3 nF 250 VAC T1 EF25 1 C5 1.0 nF 1 kV D10 3KBP08M 800 V R4 30
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LNK603 LTV817D TNY 264 equivalent LNK626 50sq100 smd LTV-817D lnk606 LNK613 LNK623 LNK302 LNK304 LNK305

tdk ee16 pc40 bobbin

Abstract: core pc40 EE16 EN BP D3 1N4007 C5 330 µF 16 V 8 T1 EE16 Lp = 1.6 mH C2 4.7 µF 400 V N 9 V , Winding Order (pin numbers) Primary Inductance EE16 Horizontal 10 pin Core Cancellation: 26T, 2 x , 9.0 250 200 150 100 50 0 30 PI-3879-051204 Bobbin 9.5 TDK PC40 EE16, AL = 190
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DI-77 TNY263P tdk ee16 pc40 bobbin core pc40 EE16 EE16 pc40 DI-77 TinySwitch-II TDK EE16 PC40 EE16 CISPR-22

LNK632

Abstract: TNY 227 µH T1 EE16 9 1 BP S C4 1 µF 25 V L1 1 mH R4 4.42 k 1% PI , mH D1 1N4007 R1 10 k D2 1N4007 T1 EE16 C3 1 nF 1 kV R3 470 k 4 R4 300 , T1 EE12.5 4 D1 1N4007 D2 1N4007 3 C7 330 µF 16 V 5 6 R13 10 1/8 W , 265 VAC INPUT FLYBACK POWER SUPPLY +12 V, 1 A RTN 85 - 265 VAC T1 EE25 *Optional , C2 22 µF 400 V J2 12 V, 1.25 A D7 SB3100 6 D5 1N4007GP F1 3.15 A T1 R3
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LNK632 TNY 227 t1 ee16 1N4007 SMD tny 177 TOP266EG TNY375 TNY376 TNY377 TNY378 TNY379 TNY380

THX202H

Abstract: thx202 =110MIL L2 10UH 6*9/1A C3 22UF/50V 5*12 T1 EE16 EE16 C4 103/1KV C/C;DIP;+ , F1 C10 N 3 C A E K U3 1 2 4 L C8 R7 3 2 AC T1 D2 , W2 0.51*1 11 W3 0.18*1 75 W4 NOTE: WIRE GAUGE(MM) W1 EE16 WINDING
Power Rail
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CR6202 PC817B THX202H thx202 thx20 1N5822 SMD THX2 AC85V-265V 26010S 330UF/25V 330PF 222/400V

Power Transformer EE-16

Abstract: TNY266PN T1 EE-16 C7 1.0 nF 1 kV R4 200 k 1/2 W NC 1 R3 100 D5 1N4005 GP L C1 6.8 , Frequency (132 kHz) operation allows small, low cost EE16 transformer · Built-in thermal shutdown , . TRANSFORMER PARAMETERS Core 200 EE16, Nippon Ceramic NC-2H or equivalent, AL = 135 nH/T2 Bobbin
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TNY266P Power Transformer EE-16 TNY266PN EEL16 core EEL16 transformer EE16 transformer EEL16 transformer DI-34 EN55022

TNY266PN

Abstract: TNY266PN equivalent VR7 is required. T1 EE-16 L 85 - 265 VAC The combined voltage drops of Zener diode (VR7 , ) operation allows small, low cost EE16 transformer · Built-in thermal shutdown protection · ON/OFF digital , Artificial Hand Connected to Secondary Return. Transformer Parameters 200 Core Material EE16
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TNY266PN equivalent EE16 10 pin vertical bobbin 101408 power transformer L2 EE16 bobbin NC-2H eel16

TNY276PN

Abstract: TNY276PN equivalent 10 V T1 EE16 D5 1N4007GP L3 Ferrite Bead 3.5 × 7.6 mm D6 SB260 R2 100 90-265 , using small, low cost EE16 core size · >15 dBV margin to EN55022B conducted EMI limits · No , controller turns it off, and the energy in T1 is transferred to the output. Schottky diode D6 and capacitor , . The internal MOSFET within U1 conducts current through the primary winding of T1 during each enabled , consistent EMI performance in production, manufacturing variations in transformer T1 must be minimized from
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TNY276PN TNY275PN TNY276PN equivalent equivalent diode for sb260 TNY275PN equivalent TNY276P DI-118

LNK625PG

Abstract: diode FR107 equivalent R2 330 L2 3.3 H T1 EE16 9 C7 1000 F 16 V D6 1N4148 C5 1 F 50V 5 V, 1.2 A , . This is to ensure that shielding techniques used in T1 are repeatable and effective at reducing , -5257-101608 70 QP 60 Bobbin EE16, 10 pin, Horizontal Feedback: 19T × 2, 34 AWG, 4 layers tape Primary , H, ±10% AV 50 EE16 NC-2H or equivalent, gapped for ALG of 126 nH/t² Winding Details
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LNK625PG EN550022 diode FR107 equivalent lnk625 fr107 equivalent EE16 10 pin bobbin EE16 10 pin DI-201

LNK564PN

Abstract: MOSFET 4166 . LinkSwitch-LP U1 LNK564PN R8 100 k D 0.125 W FB D5 SB520 RTN 3 4 T1 EE16 D7 1N4007GP , rectifies the output from transformer T1. This rectifier is a low drop Schottky diode in order to maximize , EE16 NC-2H or equivalent, gapped for ALG of 197 nH/t2 Bobbin EE16, 8 pin Winding Details
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MOSFET 4166 E-Shield Transformer Techniques for Low EMI diode for clippers EE16 transformer construction topswitch StackFET core ee16 transformer schematic DI-154 CISPR-22/EN55022

equivalent diode for sb260

Abstract: TNY276P 13.7 k 1% C6 100 nF 50 V EN/UV 5.7 V, 800 mA C7 100 µF 10 V T1 EE16 TinySwitch-III , primary current reaches the MOSFET current limit, the controller turns it off, and the energy in T1 is , small, low cost EE16 core size >15 dBµV margin to EN55022B conducted EMI limits No Y-capacitor: , output The internal MOSFET within U1 conducts current through the primary winding of T1 during each , transformer T1 must be minimized from unit to unit. This is especially important in designs that do not use
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cc charger circuit TNY275P PI-44 ferrite core shield transformer pin connection TNY275P pin configuration 1N4007GP d1

TNY274PN

Abstract: voltage doubler circuit greinacher circuit R4 100 D3 1N4002GP F1 T1 EE16 EN/UV BP/M R2 220 k S C5 100nF 50 V RX1 , rectifies the output of T1. Output voltage ripple is minimized by using a low ESR capacitor for C7. A post , . No-Load Input Power Consumption Transformer Parameters Core Material EE16 NC-2H or equivalent, gapped for ALG of 193 nH/t² Bobbin EE16, 10 pin, Horizontal Winding Details Bias: 32T x 2
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DI-153 TNY274PN voltage doubler circuit greinacher circuit gP DIODE greinacher TNY274P

LNK613DG

Abstract: 2MM5230B-7 C3 820 pF 3 1 kV R2 470 k D1 1N4007 D2 1N4007 T1 EE16 R1 10 k RF1 10 2W C1 , Limit Limit 3 Core Material EE16, NC-2H or equivalent, gapped for ALG of 143 nH/t² Bobbin EE16, Horizontal, 10 pins, (5/5) Shield: 23 T, 29 AWG Primary: 128 T, 36 AWG Feedback: 6T x 4, 30
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LNK613DG 2MM5230B-7 TOPSWITCH battery charger 1N4007 operating frequency specifications of 1n4007 diode diode 1N4007 specifications DI-157

lnk616pg

Abstract: LinkSwitch-II are skipped. R8 100 L1 1.5 mH D1 1N4007 R1 10 k D2 1N4007 T1 EE16 1 C3 1 nF , EE16, Horizontal, 10 pins, (5/5) Winding Details Shield: 15T x 3, 35 AWG Primary: 105T, 35 AWG , Inductance 1.074 mH, ±10% PI-5142-051608 EE16, NC-2H or equivalent, gapped for ALG of 88.55 nH/t² 1
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DI-158 lnk616pg LinkSwitch-II LNK61 switching time 1N4007 EE16 10 pin horizontal bobbin LNK616PG IEC61000-4-2

E-Shield Transformer Techniques for Low EMI

Abstract: LNK362 conducted EMI noise filter. Resistor R1 dampens L1 1 mH C4* 100 pF 250 VAC T1 EE16 9 4 5 3 , of the parameters required to specify and build transformer T1. The power transformer must have a
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DI-89 LNK362P LNK362 33 uF 400 V PI-4205-110805 1N4934

LNK606PG

Abstract: pin configuration diode 1N4007 have an open-circuit failure. R8 5.1 L1 2200 H D1 1N4007 R1 10 k D2 1N4007 T1 EE16 1 C3 1 nF 1 kV 7.6 V, 700 mA 9 R3 470 k D7 SB260 C7 680 F 16 V R9 1k , primary winding of T1. The other side of the transformer's primary winding is driven by U1's integrated , pin, EE16 Winding Details Shield: 16T × 2, 32 AWG Primary: 96T, 32 AWG Feedback: 9T × 2, 27
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LNK606PG EN55015 pin configuration diode 1N4007 EN55015 driver DIODE 1N4007 Functions LC PI FILTER DESIGN DI-184

lnk603dg

Abstract: LinkSwitch-II D2 1N4007 T1 EE16 5 C3 820 pF 1 kV 8 V, 0.3 A FL1 R1 470 k D7 SS15 C7 100 , 85 VAC 115 VAC 175 VAC 230 VAC 265 VAC Min Limit Max Limit 4.5 3.5 Bobbin EE16 , Output Current (mA DC) Figure 2. EE16, NC-2H or equivalent, gapped for ALG of 143 nH/t² Winding
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DI-159 lnk603dg components needed for pi controller surge current DIODE 1N4007 POWER INTEGRATIONS diode D1 1N4007 LNK603DG

LNK605DG

Abstract: DI-185 LinkSwitch-II product R8 5.1 L1 1000 H T1 EE16 1 C3 1 nF 1 kV D1 1N4007 D2 1N4007 R1 , PC44, gapped for ALG of 139 nH/t² Bobbin Horizontal, 10 pins, EE16 Winding Details 65
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DI-185 LNK605DG PI CONTROLLER circuit lnk605 EN55015-B led driver using the diode 1N4007

LNK564

Abstract: lnk564 charger 1N4937 L J-1 2.5 W 90-265 VAC 2 T1 EE16 7 D4 UF4002 C5 220 µF 25 V VR1* R3 , (T1), conducted EMI is adequately attenuated by the LC filter formed by L1 and C1. Inductor L1 serves , techniques used on T1, the primary winding can be left Clampless, since the peak drain voltage does not , Xls spreadsheet calculates all of the parameters required to specify and build transformer T1. ·
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DI-85 LNK564P LNK564 lnk564 charger line frequency transformer Pi transformer design lnk564 flyback ac charger

lnk564pn

Abstract: line frequency transformer transformer T1 EE16 7 C5 220 F 25 V VR1* R3 1N5240B 6 V, 2 k 10 V 0.33 A J3-2 C1 10 F , constructing the transformer (T1), conducted EMI is adequately attenuated by the LC filter formed by L1 and C1 , construction techniques used on T1, the primary winding can be left Clampless, since the peak drain voltage , transformer T1. · This design uses one of two "standard" transformers (see AN-39). With this transformer
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PI-4106-010208 PI-4160-092905 J32 MOSFET D0208 similar LNK564

SG6849-65DZ

Abstract: SG6849-65D Diode FRI07 T1 EE-16 D2 Diode FR102 U4 IC SG6849 (Green PWM IC) C7 (Option , ) T1 EE-16 D5 (Option) BD1 (Reference only) U1 SG6849 (Green PWM IC) U2 , High-Line Low-Line Sense Sense Voltage VTH,VA Voltage 0V T1 T2 Oscillator Section Symbol , BD1 2 - + 4 + C1 C3 R1 C2 R3 R5 CX1 R4 D4 T1 10 2 L2 , D1 R10 8 5 22 R7 T1 10 R1 C7 1 F1 L + C8 + C9 D5 Q1 3
System General
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SG6849-65DZ SG6849-65D ee-16 transformer EE-16 hysteresis fri07 diode System General IRO33
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