500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

t04 transistor

Catalog Datasheet MFG & Type PDF Document Tags

T04 transistor

Abstract: transistor t04 AT80C51RA2 Lot Number Errata List All T02,T03,T04,T05,T06 TS80C51RB2 Lot Number Errata List 38584 T01, T02 ,T03, T04, T05, T06 > 38584 TS87C51RB2 TS80C51RB2 AT80C51RA2 T02 ,T03, T04, T05, T06 Errata Sheet TS87C51RB2 Lot Number Errata List 36425 T01, T02 ,T03, T04, T05, T06 > 36425 T02 ,T03, T04, T05, T06 Errata Descriptions 1. UART/Reception in Modes 1, 2 and , transistor creates a short circuit with the external RAM buffer or peripheral when the RAM or peripheral
Atmel
Original
T04 transistor transistor t04 transistor t06 t06 TRANSISTOR Atmel AT80 atmel 8051 datasheet 4154D

T04 transistor

Abstract: transistor t04 TS80C51RB2 Lot Number Errata List 38584 T01, T02 ,T03, T04, T05, T06 > 38584 T02 ,T03, T04, T05, T06 TS87C51RB2 Lot Number Errata List 36425 T01, T02 ,T03, T04, T05, T06 > 36425 TS87C51RB2 TS80C51RB2 Errata Sheet T02 ,T03, T04, T05, T06 Errata Descriptions 1. UART/Reception in , strong internal pull-down N transistor creates a short circuit with the external RAM buffer or
Atmel
Original
t06 49 movx uart false start countdown timer using 8051 t04 "transistor" 4154C

transistor t04

Abstract: T04 transistor Philips Semiconductors Product specification NPN switching transistor FEATURES · Low current , DESCRIPTION DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: PMSS3906. MARKING CODE TYPE NUMBER PMSS3904 MARKING CODE t04 Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE , 300 MHz V V mA mW UNIT Philips Semiconductors Product specification NPN switching transistor , UNIT mA mA mA mW 'C °C °C Tstg T, Tam b -6 5 -6 5 Note 1. Transistor mounted on an FR4
-
OCR Scan
SS3904 transistor marking t04 transistor 1022 t04 07 TRANSISTOR marking code t04 PMSS3904 Philips SOT323

ESM 740

Abstract: transistor SMD t04 51 in the fS6 package · Mini-MOS Family · One-gate CMOS (L-MOS) · Transistor Array series (S-Driver , Interface Drivers Bipolar Transistor Arrays/DMOS Transistor Arrays S-Driver/Multi-Chip Transistor Arrays , high-density mounting. Elimination of individual components by use of bias resistor built-in transistor , 2.5-V gate drive (Vth = 1.5 V max) Ron = 20 (typ.) PNP low-saturation transistor ­400 Suitable , low-saturation transistor ­400 Suitable for power supply switches 100 Built-in 1-M gate-source resistor
Toshiba
Original
ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 1020/TL V1022 SCE0003A

TORX1950

Abstract: TOTX1952 Emitting Wavelength Min TLRE1008A(T04)/(T05) TLSE1008A(T04)/(T05) TLOE1008A(T04)/(T05) TLYE1008A(T04)/(T05) TLPYE1008A(T04)/(T05) TLGE1008A(T04)/(T05) TLFGE1008A(T04)/(T05) TLPGE1008A(T04)/(T05) TLSU1008A(T04)/(T05) TLOU1008A(T04)/(T05) TLAU1008A(T04)/(T05) TLYU1008A(T04)/(T05) TLGU1008A(T04)/(T05) TLPGU1008A(T04)/(T05) TLRV1022(T14,F)/(T15,F) TLRMV1022(T14,F)/(T15,F) TLSV1022(T14,F)/(T15,F) TLOV1022 , Tape No.: T04 4-mm pitch 4000 pcs/reel 636 623 Red 8.5 30 613 Orange 8.5 38
Toshiba
Original
TORX1950 TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md 2010/9SCE0004K TLRMHGH48T TLRMHGH48M TLRME20CP TLSH20TP TLRMH20TP

UZP302

Abstract: transistor t04 66 ) (open-collector) (open-collector) NPN open-collector transistor PNP open-collector transistor Current sink , : Reverse polarity protection diode : Surge absorption zener diode : NPN output transistor : PNP output transistor TYPICAL DETECTION CHARACTERISTICS (These are typical ranges, and are subject to slight changes , : more than 3 .118 3.2 .126 8 .314 t0.4 t.016 3.7 .145 16 .629 (21.2) (.834) 20.8 , .118 (11.5) (.453) t0.4 t.016 11.5 .452 10.65 .419 5.95 .234 10 .394 M2
NAiS
Original
IP67G UZP302 transistor t04 66 UZP212 807 sensor UZP232 UZP821 UZP822 SUS304 UZP811 UZP812

transistor t04 66

Abstract: UZP101 ) (open-collector) (open-collector) NPN open-collector transistor PNP open-collector transistor Current sink , protection diode : Surge absorption zener diode : NPN output transistor : PNP output transistor TYPICAL , 8 .314 t0.4 t.016 3.7 .145 16 .629 (21.2) (.834) 20.8 .818 13.5 .531 2 .079 , ) (.453) t0.4 t.016 11.5 .452 10.65 .419 5.95 .234 10 .394 M2.6P0.45 Screw tap Depth
NAiS
Original
UZP322 UZP311 UZP101 UZP111 UZP301 UZP312 UZP321

transistor SMD t04

Abstract: TCD1254GFG IV (mcd) Min TLRE1008A(T04)/(T05) TLSE1008A(T04)/(T05) TLOE1008A(T04)/(T05) TLYE1008A(T04)/(T05) TLPYE1008A(T04)/(T05) TLGE1008A(T04)/(T05) TLFGE1008A(T04)/(T05) TLPGE1008A(T04)/(T05) TLSU1008A(T04)/(T05) TLOU1008A(T04)/(T05) TLAU1008A(T04)/(T05) TLYU1008A(T04)/(T05) TLGU1008A(T04)/(T05) TLPGU1008A(T04)/(T05) TLRV1022(T14,F)/(T15,F) TLRMV1022(T14,F)/(T15,F) TLSV1022(T14,F)/(T15,F) TLOV1022 , 636 Orange 100 to 140 Embossed tape Tape No.: T04 4-mm pitch 4000 pcs/reel 636 623
Toshiba
Original
TCD1254GFG TCD2964 TCD2716DG TCD2964BFG TCD2712DG transistor SMD t05 SCE0004I TLSE20TP TLRME20TP TLRE20TP TLSH38TP TLRMH38TP

transistor SMD t04

Abstract: smd transistor t04 Product No. a a a a a a a a a a a a a a a a a a a a a a a a TLRE1008A(T04)/(T05) TLSE1008A(T04)/(T05) TLOE1008A(T04)/(T05) TLYE1008A(T04)/(T05) TLPYE1008A(T04)/(T05) TLGE1008A(T04)/(T05) TLFGE1008A(T04)/(T05) TLPGE1008A(T04)/(T05) TLSU1008A(T04)/(T05) TLOU1008A(T04)/(T05) TLAU1008A(T04)/(T05) TLYU1008A(T04)/(T05) TLGU1008A(T04)/(T05) TLPGU1008A(T04)/(T05 , 140 180 105 Taping No.: T04 4-mm pitch 4000pcs/reel 70 70 40 18 100140 Taping No.: T05
Toshiba
Original
CIPS299CF600 smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 46 S308BS621 CIPS27BSA00 CIPS54CS301 CIPS109CS302 CIPS109CS600 CIPS218CF602

transistor SMD t04

Abstract: transistor SMD t04 95 TLRE1008A(T04)/(T05) TLSE1008A(T04)/(T05) TLOE1008A(T04)/(T05) TLYE1008A(T04)/(T05) TLPYE1008A(T04)/(T05) TLGE1008A(T04)/(T05) TLFGE1008A(T04)/(T05) TLPGE1008A(T04)/(T05) TLSU1008A(T04)/(T05) TLOU1008A(T04)/(T05) TLAU1008A(T04)/(T05) TLYU1008A(T04)/(T05) TLGU1008A(T04)/(T05) TLPGU1008A(T04)/(T05 , 636 Orange 100 to 140 Embossed tape Tape No.: T04 4-mm pitch 4000 pcs/reel 636 Red , purchase any components. 157 Photocouplers and Photorelays Transistor Output CTR Part Number
-
Original
transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2959 TODX271A TLSH17TP TLRMH17TP TLRH17TP TLSE17TP TLRME17TP TLRE17TP

2N5942

Abstract: transistor t04 66 2N5942 SILICON NPN VHF POWER TRANSISTOR 80 W P.E.P. SINGLE SIDEBOARD TRANSISTOR mechanical , TRANSISTOR electrical characteristics at 25 °C case temperature (unless otherwise noted) parameter test , figure 2 2-402 Texas Instruments 2N5942 SILICON NPN VHF POWER TRANSISTOR INTERMODULATION DISTORTION , 6 Texas Instruments 2-403 2N5942 SILICON NPN VHF POWER TRANSISTOR COLLECTOR CURRENT v , 05 I 5 10 50 WO Vce, Collector-Emitter Voltage Texas Instruments 2-403 2-'t04 TEXAS INSTRUMENTS
-
OCR Scan
S-40W T04 transistor SOT 3p transistor transistor 2N 3055 power transistor 3055 2N5941 40PEP 80PEP
Abstract: typically 1 jiA Output switch transistor current to 300mA Output current limit protection The CA426 is , saturation voltage output transistor switch and a dual comparator. One comparator can monitor battery , V^ - 0.4V 5 (iA V ENABLE Inputs 0.4 V VBA T-0.4 -50 < F 1« ;O < 1 *. , inductor to the load. During the on time of the output switch transistor, the current in the inductor in , 25KHz) where Choose Ton (max) - 20|isec V s ij = saturation voltage of output switch transistor -
OCR Scan

ON1122

Abstract: T04 transistor Output (Photo Collector to emitter voltage ^CEO 30 V transistor) Emitter to collector voltage ^ECO 5 V , 4-10.45+0.2 2 3 ' 1 1 -Å' 2 Oâ'"L _jâ'"O 3 1 Oâ'"r T^-04 Pin connection (Note) * is dimension at the
-
OCR Scan
ON1122 ON1128 Photosensor Photosensors ir photo diode phototransistor visible light

TOLD2000fDA

Abstract: TCD2703ADG Number TLRE1008A(T04)/(T05) TLSE1008A(T04)/(T05) TLOE1008A(T04)/(T05) TLYE1008A(T04)/(T05) TLPYE1008A(T04)/(T05) TLGE1008A(T04)/(T05) TLFGE1008A(T04)/(T05) TLPGE1008A(T04)/(T05) TLSU1008A(T04)/(T05) TLOU1008A(T04)/(T05) TLAU1008A(T04)/(T05) TLYU1008A(T04)/(T05) TLGU1008A(T04)/(T05) TLPGU1008A(T04)/(T05) TLRV1020(T14,F)/(T15,F) TLRMV1020(T14,F)/(T15,F) TLSV1020(T14,F)/(T15,F) TLOV1020 , Embossed taping Taping No.: T04 4-mm pitch 4000 pcs/reel Taping No.: T05 2-mm pitch 8000 pcs/reel
-
Original
TOLD2000fDA TCD2703ADG TCM8230 tyco igbt module 25A TOLD2000MDA TLP250 MOSFET DRIVER application note 22PIN 68PIN 05/2Q 32PIN 12PIN 40PIN

B351 transistor

Abstract: 1DI300ZN-120 1DI300ZN-120Ã300A) POWER TRANSISTOR MODULE â fêfi : Features â'¢ hFE^*®^ High DC Current , 3ÃE DC le 16 A 1ms , IBP 32 A 1 â¡ * * m & one Transistor Pc 2000 . W 1*1 My X. KÃ"fc Pd 100 W , Items Symbols Test Conditions Min Typ Max Units n* Ì& i/L Rth(j-c) Transistor 0.063 °C/W m ja ÃA , 50 100 500 1000 5000 â¡ ic (a) DC Current Gain 5 to' 5 10z 5 103 5 t04 WW® VCE (V) Safe , Voltage of Zener Diode 3.0 B-350 1DI300ZN-1 2O(300A) Transient Thermal Resistance (Transistor) W t
-
OCR Scan
B351 transistor E82988

T04 transistor

Abstract: transistor t04 N AMER PHILIPS/DISCRETE 2SE D SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope with the collector connected to the case. They are primarily intended for high speed switching. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. 75 V , kfi max. 5 X t0"4 â  max. 2.5 x 10"4 30 to 150 â'¢ 50 to 300 3 to 15 íiíT1 10 to 100 tiST1 max , epitaxial transistor 1-00-13 Switching times (continued) Turn off time IC= 150 mA; Ib = -IBM ~ 15 mA
-
OCR Scan
2N2221A 1N916 QQ17405 T-35-19 00174Q7
Abstract: M atched Monolithic Q Transistor uad MT4 A0 ANALOG DEVICES â¡ PIN CONNECTIONS , '" MAT04FP M A T04 FS " OPERATING TEMPERATURE RANGE MIL IND MIL XIND XIND For devices processed , sales office. GENERAL DESCRIPTION The MAT-04 is a quad monolithic NPN transistor that offers , features a low offset voltage of 200pV and tight current gain matching, to within 2%. Each transistor of , voltage, input offset current, and gain match), each of the dual transistor combinations are verified to -
OCR Scan
14-PIN MAT04AY MAT04EY MAT04BY MAT04FY MIL-STD-883

transistor T04

Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor (TAHB09) process of Tachyonics Co., which has 30GHz fT(Normal). THM2004J uses a multi feedback cascade amplifier topology with resistive feedback for broad band , Configuration Top View 5 4 1 1 6 2 2 5 3 T04 6 Bottom View 3 4 Pin
Tachyonics
Original
SiGe HBT GAIN BLOCK MMIC AMPLIFIER Tachyonics TRANSISTOR 30GHZ TRANSISTOR C 608 Germanium Amplifier Circuit diagram 1000MH 2000MH 100MH

TT 2222

Abstract: bTE bb S B 'lB l 002TQ4fl T04 D B L V 4 5 /1 2 V.H.F. power transistor J 0 Fig. 8 , TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio , '¢ internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6 , 3 ^ 3 1 Q O S TD M M A V.H.F. power transistor 3bT APX B L V 4 5 /1 2 RATINGS , transistor B L V 4 0 / Yd APPLICATION INFORMATION R.F. performance in c.w. operation (common-emitter
-
OCR Scan
TT 2222 S3T31 BLV45/12 7Z773B5 002TQ4

transistor t04 76

Abstract: GV 475 diode ^M National , , , Qf Semiconductor~ March 1996 NDP6060/NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field â  48A, 60V. RDS(0N> = 0.025ft @ VGS= 10V. effect transistors are produced using National's _ ~. . . â'ž. , , , proprietary, high cell density, DMOS technology. ' Critical DC electrical parameters specified at This very , > Figure 15. Transient Thermal Response Curve 8-72 bS01130 004027S T04 â  This Material Copyrighted By
-
OCR Scan
NDB6060 transistor t04 76 GV 475 diode T0-220 S01130 50113G 0DMQ27H
Showing first 20 results.