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t 04 80

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 02 03 04 05 06 8.0 06 81 μ 6.0 5.1 0.3 5.4 0.6 5.7 0.9 μ 2.1 0 01 02 03 04 05 06 4.2 0.2 6.1 2.1 8.0 4.0 0.0 0.0 0 01 02 03 8.0 0 01 02 03 04 05 â"ƒ â³ 5.1 0.0 8.0 6.1 4.2 2.3 0.4 â"ƒ â³ 2.1 06 0.0 0 01 02 03 04 05 06 6.1 â"ƒ â³ 0.1 0.0 0 01 02 03 04 05 06 T( ) 04 8.0 0 , 2.1 0.1 8.0 6.0 4.0 2.0 0.0 0 0 01 1 02 2 03 3 04 4 05 5 06 â Sumida
Original
CDRH3D14 CDRH3D14NP-2R2NC
Abstract: ³ 5.1 2.1 0.1 8.0 6.0 4.0 2.0 0.0 0 01 02 03 04 05 06 4.2 0.2 6.1 2.1 8.0 4.0 0.0 0 01 02 03 04 05 06 â"ƒ â³ T( ) 04 8.0 0 0 μ DC (A) DC (A) 4 0.1 , 8.0 4.0 0.0 0 0 01 3 02 6 03 9 04 21 05 51 06 â"ƒ â , 04 06 6.0 μ 0 01 02 03 04 05 06 0 6.0 2.1 8.1 4.2 0.3 6.3 μ 8.0 , 6.0 04 8.0 05 0.1 06 2.1 â"ƒ Ⳡμ â"ƒ L (100 ) L (20 ) 3 Sumida
Original
CDRH4D28C/LD CDRH4D28CLDNP-4R7PC CDRH4D28CLDNP-6R8PC

ELER

Abstract: 0.1 2.0 B ± 0.20 5.65 CL W ± 0.3 16.0 F ± 0 .1 ^ 7.5 E ± 0.10 ' P, ± 0.1 1.75 t, 0.4 8.0 , Impedance Permissible Ripple Current Surge Voltage - 4 0 t o +105 °C 6.3to16V DC 2.2 to 33pF ± 2 0 % (120Hz , Dimensions O . I. . 1 At Aï Ba '//// m 0 ó r U Y/t w< J d Size code M arking V A-Cl - m [mm] C apa citor elem ent L + 0 .2 7.9 W ± 0.1 5.3 B2± 0 .1 1.9 T ± , Characteristics 1 C a p a c ita n c e : IO jìF I T a n ta lu m e le c tro ly tic ^ c a p a c ito r O rg a n ic s
-
OCR Scan
ELER
Abstract: 06 0.0 0 01 02 03 04 05 06 0.2 0 01 02 03 52 â"ƒ â³ 2.1 0.1 8.0 6.0 4.0 2.0 0.0 2.1 0.1 8.0 6.0 4.0 2.0 0.0 0 01 02 03 04 05 06 T( ) 5.1 DC (A) T , 0.0 4.0 8.0 2.1 6.1 0.2 â"ƒ â³ 6.0 04 02 8.0 1 2 3 4 5 â"ƒ â³ 0 01 02 03 04 05 06 8.0 05 â"ƒ â³ 5.1 0 2 4 6 8 01 21 μ 2.1 0 01 02 03 04 05 06 0.3 5.2 0.2 5.1 0.1 5.0 0.0 0.0 8.0 6.1 4.2 2.3 0.4 8.4 μ 0.1 06 Sumida
Original
CDRH4D15/S CDRH4D15/SNP-1R5NC CDRH4D15/SNP-2R2NC 15/SNP-330NC
Abstract: IN , X O U T 0.4 8.0 MHz fs X T IN , X T O U T 30.0 34.0 kHz Clock , 4 15 V N 128 x 4-bit T M P 4 7C 4 15 F OTP SDIP42-P-600 TM P 47C 215 N Package , P32 P33 -*â'"£ P10 ?â' c P12 P13 t P20 C P21 C 1 2 3 4 5 6 7 8 9 10 11 12 , ) 3-*-R70(T1) 2~*â'" VSS > * â'" RESET >-*-X O U T X1N 3^_K 03 (CIN3) y * â'" K02 (CIN2) â , P13 to Pow e t P23 to P33 to High breakdown I/O M3 to RS3 to R62 to / WO -
OCR Scan
TLCS-470 TMP47C215/415 TMP47C215N TMP47C415N 47C215/415 TLCS470
Abstract: 04 8.0 05 0.1 06 2.1 â"ƒ â³ L (100 ) 06 DC (A) T( ) 8. CR32NP , 02 03 04 05 06 0.1 0 01 02 03 4.0 02 0 T( ) T( ) 8.0 DC (A) T , ³ μ 0.3 5.2 0.2 5.1 0.1 5.0 0.0 0.0 μ 8.0 9.0 04 5.4 8.0 μ 5.1 0.0 , 2.0 4.0 6.0 8.0 0.1 2.1 â"ƒ â³ 2.1 05 0.6 2.1 8.0 6.1 4.2 2.3 0.4 8.4 , 8.1 5.1 2.1 9.0 6.0 3.0 0.0 0 01 02 03 04 05 06 4.2 0.2 6.1 2.1 8.0 4.0 0.0 0 01 02 03 Sumida
Original
CR32NP-2R7MC CR32NP-3R3MC CR32NP-3R9MC CR32NP-4R7MC CR32NP-5R6MC CR32NP-6R8MC

3N0404

Abstract: IPB80N04S3-04 IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS®-T Power-Transistor Product Summary V DS , PG-TO262-3-1 3N0404 IPP80N04S3-04 PG-TO220-3-1 3N0404 Maximum ratings, at T j=25 °C, unless , =10V T C=100 °C, V GS=10 V2) Value 80 Unit A 80 Pulsed drain current2) I D,pulse T C , voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.95 1.3 V Reverse recovery time2) t , , IPP80N04S3-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS 6 V I D = f(T C); V GS 6 V
Infineon Technologies
Original
IPB80N04S3-04 IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE ANPS071E

3N0404

Abstract: infineon smd package Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS®-T , ) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=20 V, I F=I S, di F , 5.6 30 25 80 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=80 A, R G=3.5 V , , IPP80N04S3-04 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 160 , DS [V] t p [s] Rev. 1.1 page 4 2007-02-16 Preliminary Data Sheet IPB80N04S3-04
Infineon Technologies
Original
infineon smd package

4P03L04

Abstract: 4p03 drain current1) ID Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Value -80 Unit A -80 Pulsed drain current2) I D,pulse T C=25°C -320 Avalanche energy, single , IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS -6V I D = f(T C); V GS -6V; SMD 160 100 140 80 120 60 -I D [A] P tot [W] 100 80 40 60 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C
Infineon Technologies
Original
IPB80P03P4L-04 IPI80P03P4L-04 IPP80P03P4L-04 4P03L04 4p03 146a marking diode

2n0404

Abstract: GS P tot T j, T stg T C=25 °C T C=25 °C I D=80A Value 80 80 320 810 ±20 300 -55 . +175 55/175/56 mJ , ) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=20 V, I F=I S, di F , , I D=80 A, V GS=0 to 10 V 25 47 127 4.9 35 75 170 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD , 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 10 V 350 100 300 80 250 60 P tot [W] 200 150 I D
Infineon Technologies
Original
2n0404 IPB80N04S2-04 IPP80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19054 SP0002-19058
Abstract: 2.1 9.0 6.0 3.0 0.0 T( ) 01 0 2.3 02 01 0 0 0.0 03 2 8.0 04 , ¼ 6.1 05 0 0 1 03 1 2 0.0 8.0 6.1 4.2 2.3 0.4 8.4 â"ƒ â³ 6 0 4 , "ƒ â³ 8 01 4.0 0 0.0 μ 02 8.0 0 03 2.1 2 04 6.1 4 05 , ) DC (A) 04 Page 3 of 5 DC (A) DC (A) DC (A) T( ) 6. CD43NP-3R3MC 05 L ( H , ¼ 8.0 06 06 μ 2.1 0.1 8.0 6.0 4.0 2.0 0.0 0 0 μ 0.0 0 03 8 01 04 Sumida
Original
CD43NP-2R2MC CD43NP-2R7MC CD43NP-3R9MC CD43NP-120MC

2n03l04

Abstract: smd TRANSISTOR code marking 8K parameter: T j , tp = 80 µs 10 4 10 3 SPP80N03S2L-04 A Ciss pF 10 1 IF C , current Ptot = f (TC) ID = f (T C) parameter: VGS 4 V parameter: VGS 10 V SPP80N03S2L-04 , parameter : D = t p/T 10 3 SPP80N03S2L-04 10 1 SPP80N03S2L-04 K/W t = 30.0µs p 10 0 , . drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs , RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 35 160 A S
Infineon Technologies
Original
SPI80N03S2L-04 SPP80N03S2L-04 SPB80N03S2L-04 Q67042-S4112 2n03l04 smd TRANSISTOR code marking 8K 35G100 Q67042-S4113 2N03L04
Abstract: ¼ 2.1 8.0 4.0 0.0 0 0.0 01 8.0 02 6.1 03 4.2 04 2.3 05 0.4 , 2.1 04 6.1 05 0.2 â"ƒ â³ 5 0.0 2.0 4.0 6.0 8.0 0.1 â"ƒ â³ 06 0 0 , ) 0.2 9. CDH38D11SHF-4R7MC L ( H) T( ) DC (A) 04 6.1 0 0 0 01 2 01 02 4 02 03 6 03 04 8 04 05 01 05 â"ƒ â³ 06 21 06 T , 2 1 0 0 0.0 01 2.0 02 4.0 03 6.0 04 8.0 05 0.1 06 â Sumida
Original
CDH38D11/S CDH38D11SHF-1R0MC CDH38D11SHF-1R2MC CDH38D11SHF-1R8MC CDH38D11SHF-2R2MC CDH38D11SHF-120MC

4N03L04

Abstract: iPP80n03S4L-04 I D=80 A T C=25 °C Value 80 80 320 95 80 ±16 94 -55 . +175 55/175/56 mJ A V W °C Unit A Rev , =25 °C V GS=0 V, I F=80 A, T j=25 °C V R=15 V, I F=I S, di F/dt =100 A/µs 0.6 0.9 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=24 V, I D=80 A, V GS=0 to 10 V 12 8 60 3.1 15 16 75 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=80 A, R G=3.5 V GS=0 V, V DS=25 V, f =1 MHz 4000 1000 53 9 , IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I
Infineon Technologies
Original
4N03L03 4N03L04 iPP80n03S4L-04 4n03 IPI80N03S4L-04 IPP80N03S4L-04

4N03L04

Abstract: IPI80N03S4L-04 current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 Unit A 80 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse E AS I D=80 A 95 mJ Avalanche current, single pulse I AS T C=25 °C 80 A Gate source , forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C Reverse recovery time2) t rr V R=15 V , IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS
Infineon Technologies
Original
AG SMD TRANSISTOR DIODE smd marking Ag

4N03L04

Abstract: IPB80N03S4L-03 Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 Unit A 80 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse E AS I D=80 A 95 mJ Avalanche current, single pulse I AS T C=25 °C 80 A Gate source voltage V GS , current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C Reverse , , IPP80N03S4L-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS 6 V I D = f(T C); V GS 6 V
Infineon Technologies
Original
Abstract: ) T( ) 0 1 2 3 4 5 â"ƒ Ⳡμ 2.1 9.0 6.0 3.0 6 8.0 6.0 4.0 2.0 0.0 0 0 0.0 01 2 2.0 02 4 4.0 4.0 03 6 8.0 6.0 04 , 3.0 0.0 0 0.0 01 8.0 02 6.1 03 4.2 04 2.3 05 0.4 06 8.4 , ³ 8.0 05 0 1 2 3 4 5 6.1 0 01 02 03 04 05 06 0.1 06 21 0 01 02 03 04 05 06 â"ƒ â³ 0.0 0.0 8.0 6.1 4.2 2.3 0.4 8.4 μ μ 2.1 0.1 8.0 6.0 4.0 Sumida
Original
CDRH2D14B/LD CDRH2D14B/LDNP-4R7NC CDRH2D14B/LDNP-5R6NC CDRH2D14B/LDNP-6R8NC CDRH2D14B/LDNP-8R2NC CDRH2D14B/LDNP-100MC

UX-F5B

Abstract: shv-30j 20.0 5.0 600 10.0 20.0 I FSM t rr 1 t rr 2 (µs) (µs) (A) 40 0.4 0.18 30 0.4 0.18 40 0.4 0.18 80 0.4 0.18 30 0.4 0.18 40 0.4 0.18 80 0.4 0.18 30 0.4 0.18 30 0.4 0.18 40 0.4 0.18 80 0.4 0.18 Part Number , 90% Recovery Point t rr 2 : IR = 2·IF 75% Recovery Point t rr 1 t rr 2 (µs) 0.2 0.2 0.2 0.4 0.4 , 35 30 20 20 50 15 35 20 20 50 20 20 20 t rr 1 t rr 2 (µs) 0.4 0.4 4.0 1.5 0.4 0.4 0.4 0.4 4.0 0.4 , 50 30 60 50 80 50 t rr 1 : IR = I F 90% Recovery Point t rr 2 : IR = 2 · IF 75% Recovery Point
Sanken Electric
Original
UX-F5B shv-30j UX-F5B diode FMQ2FU axial package RG-2A Diode SFPM-52 SFPM-62 AM01Z EM01Z SFPM-54 SFPM-64
Abstract: 8.0 6.1 4.2 2.3 0.4 â"ƒ â³ 3 06 0.0 0 01 02 03 04 05 06 4 01 â"ƒ â³ 4.2 0.2 6.1 2.1 8.0 4.0 0.0 4.2 0.2 6.1 2.1 8.0 4.0 0.0 0 01 02 03 04 05 06 T( ) 2.3 , 03 9 03 04 21 04 05 51 05 â"ƒ â³ 06 81 06 T( ) DC (A) T , 0 01 02 03 04 05 â"ƒ Ⳡμ 2.1 0 01 02 03 04 05 06 8.0 04 0 0 , 01 03 01 T( ) 04 06 04 02 06 02 2.0 3.0 06 03 09 03 Sumida
Original
CDRH4D28 CDRH4D28NP-2R7NC CDRH4D28NP-3R3NC CDRH4D28NP-151NC

SG320-12

Abstract: mV mV mV 0.4 0.4 0.4 0.4 1.5 0.5 Units 80 SG120-5.2/SG320-5.2 (Unless , V T - Pkg: I,«5mAto500mA, PS 2W T olerance -7.65 -8.00 -«.35 -7.6 -8.0 -8.4 , Pkgs: V â'ž - -35V, T, - 25°C T - P k g : V1 = -3 5 V ,T J = 25°C N mA 0.4 mA 0.4 1.1 mA 0.4 0.4 P ow er Pkgs: l0 = 1.0A, T - Pkg: l0 = 500m A 2 0.4 0.4 mA 2.3 , mV Load Regulation (Note 1) Power Pkgs: lQ* 5mA to 1.0A, T j « 25°C 30 80 30 80
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OCR Scan
SG320-12 SG120/SG320 SG120/320 SG7800A/ SG120 120-X 320-X
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