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Part Manufacturer Description Datasheet BUY
ISL28113SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifier; Package: Eval Board visit Intersil
ISL28114SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifiers; Package: Eval Board visit Intersil
EL5144CW Intersil Corporation VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN visit Intersil
EL5192CW-T7 Intersil Corporation VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN visit Intersil
EL6204CW-T7 Intersil Corporation SPECIALTY INTERFACE CIRCUIT, PDSO6, SOT-23, 6 PIN visit Intersil
ISL88694IH5-TK Intersil Corporation SPECIALTY ANALOG CIRCUIT, PDSO5, SOT-23, 5 PIN visit Intersil

sot-23 MARKING 636

Catalog Datasheet MFG & Type PDF Document Tags

transistor BC 236

Abstract: transistor bf 425 IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC , 636, BC 638, BC 640 BC 636, BC 638, BC 640 BC 636, BC 638, BC 640 -ic = 500 mA BC 636, BC 638, BC 640 , -92 Transistors Orientation of transistor on tape1 1 Additional marking for specials5 1 *i 06 *View on flat side
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transistor BC 236 transistor bf 425 TRANSISTOR 636 transistor bc 237c D-636 transistor transistor bc 238 b 15A3DIN

672047

Abstract: Lumex 68 Surface Mount LEDs Dim. in mm Fig. 1 - SOT-23 Footprint Fig. 2 - 0603 A B 1 2 2 , . SML-LX15IGC-RP-TR SML-LX15YGC-RP-TR 1A SOT-23 Red/Green Yellow/Green Water Clear 635/565 , SOT-23 Super Red Red Super Yellow Super Ultra Green Green Ultra Pure Green Ultra Super , SOT-23 Green Ultra Pure Green Ultra Super Blue Water Clear 565 525 470 , , Re-Lampable 3.20 Ø1.60 7.0 Anode 1.01 0.6 Fig. 23 0.80 6.7 *Cathode mark 3.50
Lumex
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SML-LX3632SISUGSBC 672047 Lumex 68 SML-LX2832SUGC-TR SML-LX1206GW-TR 67-1695-1-ND SSLLXA1725GCTR 67-1366-ND 67-1355-ND 67-1655-1-ND 67-1674-1-ND 67-1655-2-ND 67-1674-2-ND

SOT-23 marking 352 MOSFET

Abstract: WTC2305 Design For Low R DS(ON) R DS(ON) , Junction-ambient 3 Operating Junction and Storage Temperature Range Unit V A °C Device Marking , Charge VDS = -15V, ID = -4A, VGS = -4.5V Qg - 6.36 - nC Gate-Source Charge VDS = -15V , ://www.weitron.com.tw 3/4 Rev.B 05-Jun-09 WTC2305 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H
Weitron
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SOT-23 marking 352 MOSFET DSS SOT23 MOSFET P-Channel sot-23

TRANSISTOR 636

Abstract: MMBT3904 for graphs ELECTRICAL CHARACTERISTICS (Ta =25°C) -r7x\- ft SOT-23 1. Base 2. Emitter 3. Collector , =1KQ f= 10Hz to 15.7KHZ * Pulse Test: Pulse Width£300ns, Duty Cycle¿2% \ Marking n z c ~B ET «8 SAMSUNG SEMICONDUCTOR 636
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MMBT4124 MMBT3904 UJ41M2 100MH

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 mW (SOT-23) General Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-2 , 1.5KE100A 4-17 1.5KE51CA 4-17 1M130ZS5 6-36 1.5KE100CA 4-17 1.5KE56A 4-17 1M150ZS5 6-36 1.5KE10A 4-17 1.5KE56CA 4-17 1M160ZS5 6-36 1.5KE10CA 4-17 1.5KE6.8A 4-17 1M180ZS5 6-36 1.5KE110A 4-17 1.5KE6.8CA 4-17 1M200ZS5 6-36 , 1M110ZS5 6-36 1N4732A 6-24 1.5KE51A 4-17 1M120ZS5 6-36 1N4733A 6-24
Motorola
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UJT-2N2646 PIN DIAGRAM DETAILS UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b
Abstract: SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage , 4 pF 5 dB * Pulse Test: Pulse W ¡dth£300(is, Duty C ycle¿2% \ Marking n zc , TO-3P Unit: mm EMBOSSED CARRIER Specification for SOT-23 É SAMSUNG SEMICONDUCTOR Unit -
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GGD7415

c639

Abstract: c33840 SOT-23 SOT-363 SOT-23 SOT-23 SOT-23 SOT-89 SOT-23 Semiconductor Group 10 Marking , SOT-23 SOT-23 SOT-23 SOT-323 SOT-23 SOT-23 Semiconductor Group 15 Marking Sorted by , Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 , BAS 19 BAS 20 BAS 21 BAS 28 BAS 40 SOD-123 SOD-123 SOD-323 SOD-323 SOD-323 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-143 SOT-143 SOT-23 SOD-323 SOT-23 SOT-23 SOT-23 SOT-23
Siemens
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c639 c33840 transistor C639 c33725 c877 C63716 14-099R 15-099R OD-323

transistor BC 236

Abstract: transistors marking HK available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , -92 Transistors Orientation of transistor on tape1 1 Additional marking for specials5 1 *i 06 *View on flat side , ) Additional marking " 0 * : Taping without paper film Additional marking "Z*: Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example , devices per reel 20 00 devices per folded tape in special box. 7.2 Taped transistors in SOT 23 and SOT 143
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transistors marking HK bc 106 transistor transistor C 639 W transistors BC 23 bc 569 A27 637 BC635

lp2305

Abstract: LP2305LT1G 130m 3 1 2 SOT­ 23 (TO­236AB) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance D ORDERING INFORMATION Device Marking LP2305LT1G , Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time 6.36 VDS = -15V, ID = -4A VGS , COMPANY, LTD. LP2305LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2
Leshan Radio Company
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lp2305 3000/T LP2305LT3G 10000/T

102c marking

Abstract: SIEMENS NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=22kQ, R2=22kiî) BCR 141 Type BCR 141 Marking Ordering Code WDs Q62702-C2258 Pin Configuration CO Package it O SOT-23 1=B 2= E Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC , < 300ns; D < 2% Semiconductor Group 636 11.96 SIEMENS DC Current Gain /iFE = f (lc ) 1 /qe =
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102c marking
Abstract: Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOTâ'" 23 (TOâ'"236AB) 3 ORDERING INFORMATION Device Marking LP2305LT1G S-LP2305LT1G LP2305LT3G S-LP2305LT3G , Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time 6.36 VDS = -15V , CHARACTERISTICS Rev .O 3/4 LESHAN RADIO COMPANY, LTD. LP2305LT1G , S-LP2305LT1G SOT-23 NOTES: 1 Leshan Radio Company
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ic str wg 252

Abstract: HV9961 .22 Enhancement Mode MOSFET Arrays .23 Insulated Gate Bipolar Transistors (IGBT) .23 III Application & Design Notes , Position Statement on Green/Lead-Free Products .28 Package Marking Instructions on , 2.0 Device Package 3-Lead SOT-89 (N8) 8-Lead SOIC (TG) 3-Lead SOT-23 (K1) 3-Lead TO-92 (N3 , ) TP5322 -220 12 75 -2.4 3-Lead SOT-23 (K1) 3-Lead SOT-89 (N8) Ultrasound MOSFET Arrays
Supertex
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ic str wg 252 HV9961 hv9931 HV9910 HV9910B str 6655

HV9961

Abstract: 2N7002 MARKING 1702 .22 Enhancement Mode MOSFET Arrays .23 Insulated Gate Bipolar Transistors (IGBT) .23 III Application & Design Notes , Position Statement on Green/Lead-Free Products .28 Package Marking Instructions on , -Lead SOIC (TG) 3-Lead SOT-23 (K1) TN5325 250 7.0 70 2.0 3-Lead TO-92 (N3) 3-Lead SOT , -220 12 75 -2.4 3-Lead SOT-23 (K1) 3-Lead SOT-89 (N8) Supertex inc. 2011 Short Form
Supertex
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2N7002 MARKING 1702 HV9963 SR087 DN2450 HV509 HV9967

STR 6656

Abstract: HV509 .22 Enhancement Mode MOSFET Arrays .23 Insulated Gate Bipolar Transistors (IGBT) .23 III Application & Design Notes , Position Statement on Green/Lead-Free Products .28 Package Marking Instructions on , (TG) 3-Lead SOT-23 (K1) 3-Lead TO-92 (N3) 3-Lead SOT-89 (N8) TP2424 -240 8.0 200 , -220 12 75 -2.4 3-Lead SOT-89 (N8) TP5322 -220 12 75 -2.4 3-Lead SOT-23
Supertex
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STR 6656 pj 899 diode K 3264 fet transistor diode PJ 966 tray qfn 7x7 cell phone detector

transistor C639

Abstract: c639 Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 , -323 SOD-323 SOT-23 SCD-80 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-143 SOT-143 SOT-23 SCD-80 SOD-323 SOT-23 SOT-323 SOT-23 SOT-323 SOT-23 SOT-323 SOT-23 SCD-80 SOD-323 SOT-23 SOT-323 SOT-23 SOT-323 SOT-23 SOT-323 SOT-143 SCD-80 SOD-323 SOT-143 SOT-23 SOT-23 MW-4 MW-4 SOT , SOT-23 SOT-23 SOT-23 SOT-23 SOT-323 SOT-23 SOT-323 SOT-23 SOT-323 SOT-143 SOT-343 SOT
Siemens
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transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 70-04S

c639

Abstract: C63716 SOT-323 SOT-23 SOT-23 SOT-23 SOT-143 SOT-23 Marking Blue S White R Blue S White R Yellow R PA JC JF , -143 SOT-143 SOT-23 SOT-363 Marking S5 S6 53 53 54 54 55 55 56 56 57 A2 AU AS AT 62 L 63 63 64 65 66 67 , -323 SOT-23 SOD-123 SOD-123 SOT-23 SOD-323 SOD-323 SOT-23 Marking A4 JA A7 A7 JX JY A1 A1 GA GB GC GD GE , 635-10 BC 635-16 BC 636 BC 636-6 BC 636-10 BC 636-16 BC 637-6 BC 637 Package SOT-23 SOD-323 SOT , SOT-23 SOT-23 SOT-323 SOT-23 Marking C637 10 C637-16 C638 C638 6 C638 10 C638 16 C639 C639 6 C639
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MARKING 68W SOT-23 sot-23 MARKING 636 C337 40 C-639 F959 sot143 Marking code 5B BCR169S BB619C

c639

Abstract: c637 diode Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed , current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings Parameter lD @Ta = , %. ® Surface mounted on FR-4 board, t < 5sec. C -636 www.irf.com International K S I Rectifier 100 , , Appendix A Part marking information, Appendix B Test Circuit diagrams, Appendix C www.irf.com C-639
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c637 diode diode C639 Micro6 Package for c639 C639 10 C637 IRLMS1902 C-637 0Q001

BFQ67W

Abstract: SOT-23 marking 717 . Mechanical Data Typ: BFQ67 Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: V2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFQ67R Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking , BFQ67 / BFQ67R / BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 , SOT-23 3 Applications 2 1 Low noise small signal amplifiers up to 2 GHz. This transistor , : approx. 6.0 mg Marking: WV2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings
Vishay Semiconductors
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SOT-23 marking 717 682 MARKING SOT-23 358 MARKING SOT23-3 2002/95/EC 2002/96/EC D-74025

transistor marking WV2

Abstract: j-05 -323 Mechanical Data Typ: BFQ67 Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: V2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFQ67R Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: R67 , Features · Small feedback capacitance · Low noise figure · High transition frequency SOT-23 2 1 3 SOT-23 Applications Low noise small signal amplifiers up to 2 GHz. This transistor has , mg Marking: WV2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter 2 3 19150 Electrostatic sensitive
Vishay Semiconductors
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transistor marking WV2 j-05 BFQ6 88/540/EEC 91/690/EEC

transistor marking WV2

Abstract: 682 SOT23 MARKING Mechanical Data Typ: BFQ67 Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: V2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFQ67R Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: R67 , component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC SOT-23 2 1 3 SOT-23 , mg Marking: WV2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Electrostatic sensitive device , 58.5 57.0 60.0 62.1 63.6 64.7 65.5 65.2 64.8 63.5 61.5 59.8 69.8 63.5 66.0 69.0 69.7 69.6 68.6 67.6
Vishay Semiconductors
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682 SOT23 MARKING
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