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1812SMS-47NG Coilcraft Inc 1 ELEMENT, 47uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD, SMD ri Buy
1812SMS-68NG Coilcraft Inc 1 ELEMENT, 68uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD, SMD ri Buy
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smd diode MARKING F6

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: =0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - 1.5 1.7 I F=6 A, T j=150 °C , IDB06S60C IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Product Summary V DC â , tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDB06S60C IDB06S60C PG-TO220-3-45 PG-TO220-3-45 D06S60C D06S60C C A , =10 ms 10 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt ... Infineon Technologies
Original
datasheet

7 pages,
220.09 Kb

SMD F6 DIODE smd diode MARKING F6 d06s60 Diode smd f6 schottky IDB06S60C TEXT
datasheet frame
Abstract: DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - , IDB06S60C IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: · CCM PFC · Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C IDB06S60C D2PAK (PG-TO220 PG-TO220 , V Diode ruggedness dv/dt dv/ dt VR=0.480V 50 V/ns Power dissipation P tot ... Infineon Technologies
Original
datasheet

7 pages,
220.49 Kb

SMD F6 DIODE smd diode F6 JESD22 IDB06S60C Diode smd f6 Diode smd f6 schottky D06S60C TEXT
datasheet frame
Abstract: IDD06SG60C IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , Optimized for high temperature operation · Lowest Figure of Merit QC/IF thinQ! 3G Diode designed for , Package Marking Pin 1 Pin 2 Pin 3 IDD06SG60C IDD06SG60C PG-TO252-3 PG-TO252-3 D06G60C D06G60C n.c. A C , Repetitive peak reverse voltage V RRM T j=25 °C 600 V Diode dv/dt ruggedness dv/ dt VR , Conditions Unit min. typ. max. - - 2.1 SMD version, device on PCB, minimal ... Infineon Technologies
Original
datasheet

7 pages,
260.7 Kb

SMD F6 DIODE JESD22 IDD06SG60C Diode smd f6 schottky Diode smd f6 smd diode marking UJ D06G60C smd diode MARKING F6 TEXT
datasheet frame
Abstract: voltage Diode forward voltage V DC VF I R=0.05 mA, T j=25 °C I F=6 A, T j=25 °C I F=6 A, T j=150 °C , IDD06SG60C IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features · Revolutionary semiconductor , < 130 °C 600 8 6 V nC A thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDD06SG60C IDD06SG60C Package PG-TO252-3 PG-TO252-3 Marking , ,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode ... Infineon Technologies
Original
datasheet

7 pages,
284.49 Kb

smd diode F6 MSL3 for infineon f6 diode smd Diode smd f6 d06g60 smd diode MARKING F6 D06G60C SMD F6 DIODE Diode smd f6 schottky IDD06SG60C TEXT
datasheet frame
Abstract: IDD06SG60C IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features · Revolutionary semiconductor , °C 600 8 6 V nC A thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDD06SG60C IDD06SG60C Package PG-TO252-3 PG-TO252-3 Marking , T C=150 °C, t p=10 ms Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation , Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on ... Infineon Technologies
Original
datasheet

7 pages,
721.54 Kb

SMD F6 DIODE d06g60 smd diode MARKING F6 IDD06SG60C TEXT
datasheet frame
Abstract: Diode forward voltage VF I F=6 A, T j=25 °C - 1.5 1.7 I F=6 A, T j=150 °C - 1.7 , IDB06S60C IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , 5mA2) thinQ! 2G Diode designed for fast switching applications like: · CCM PFC · Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C IDB06S60C D2PAK D06S60C D06S60C C A Maximum , 10 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt dv/ dt ... Infineon Technologies
Original
datasheet

7 pages,
296.42 Kb

SMD F6 DIODE smd diode MARKING F6 JESD22 IDB06S60C Diode smd f6 D06S60C TEXT
datasheet frame
Abstract: I R=0.05 mA, T j=25 °C Diode forward voltage VF I F=6 A, T j=25 °C - 2.1 2.3 I , IDD06SG60C IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , 61249-2-21 definition thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 , 600 V Diode dv/dt ruggedness dv/ dt VR= 0.480 V 50 V/ns Power dissipation P ... Infineon Technologies
Original
datasheet

7 pages,
266.16 Kb

smd diode Uj smd diode marking UJ IDD06SG60C JESD22 SMD F6 DIODE smd diode F6 Diode smd f6 Diode smd f6 schottky D06G60C smd diode MARKING F6 TEXT
datasheet frame
Abstract: characteristics DC blocking voltage V DC I R=0.05 mA, T j=25 ° C Diode forward voltage VF I F=6 , IDD06SG60C IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary â , ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD06SG60C IDD06SG60C , T j=25 ° C 600 V Diode dv/dt ruggedness dv/ dt VR= 0….480 V 50 V/ns ... Infineon Technologies
Original
datasheet

7 pages,
317.19 Kb

IDD06SG60C TEXT
datasheet frame
Abstract: DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - , IDB06S60C IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , €¢ Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDB06S60C IDB06S60C D2PAK (PG-TO220 PG-TO220 , 600 V Diode ruggedness dv/dt dv/ dt VR=0…480V 50 V/ns Power dissipation P ... Infineon Technologies
Original
datasheet

7 pages,
220.13 Kb

IDB06S60C TEXT
datasheet frame
Abstract: DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - , IDB06S60C IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC â , €¢ Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDB06S60C IDB06S60C D2PAK (PG-TO263 PG-TO263 , 600 V Diode ruggedness dv/dt dv/ dt VR=0…480V 50 V/ns Power dissipation P ... Infineon Technologies
Original
datasheet

7 pages,
509.87 Kb

IDB06S60C TEXT
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