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ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
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ISL58303DRTZ-T7A Intersil Corporation 800mA Triple Output Laser Diode Driver; TQFN24; Temp Range: 0° to 70° visit Intersil Buy
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ICM7218AIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil

smd diode MARKING F6

Catalog Datasheet MFG & Type PDF Document Tags

Diode smd f6 schottky

Abstract: smd diode MARKING F6 =0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - 1.5 1.7 I F=6 A, T j=150 °C , IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Product Summary V DC â , tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: â'¢ CCM PFC â'¢ Motor Drives Type Package Marking Pin 1 Pin 2 IDB06S60C PG-TO220-3-45 D06S60C C A , =10 ms 10 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt
Infineon Technologies
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Diode smd f6 schottky smd diode MARKING F6 d06s60 SMD F6 DIODE smd diode F6

D06S60C

Abstract: Diode smd f6 schottky DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - , IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: · CCM PFC · Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C D2PAK (PG-TO220 , V Diode ruggedness dv/dt dv/ dt VR=0.480V 50 V/ns Power dissipation P tot
Infineon Technologies
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JESD22 Diode smd f6

smd diode MARKING F6

Abstract: smd diode marking UJ IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , Optimized for high temperature operation · Lowest Figure of Merit QC/IF thinQ! 3G Diode designed for , Package Marking Pin 1 Pin 2 Pin 3 IDD06SG60C PG-TO252-3 D06G60C n.c. A C , Repetitive peak reverse voltage V RRM T j=25 °C 600 V Diode dv/dt ruggedness dv/ dt VR , Conditions Unit min. typ. max. - - 2.1 SMD version, device on PCB, minimal
Infineon Technologies
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smd diode marking UJ

Diode smd f6 schottky

Abstract: D06G60C voltage Diode forward voltage V DC VF I R=0.05 mA, T j=25 °C I F=6 A, T j=25 °C I F=6 A, T j=150 °C , IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features · Revolutionary semiconductor , < 130 °C 600 8 6 V nC A thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDD06SG60C Package PG-TO252-3 Marking , ,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode
Infineon Technologies
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d06g60 MSL3 for infineon f6 diode smd

smd diode MARKING F6

Abstract: SMD F6 DIODE IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features · Revolutionary semiconductor , °C 600 8 6 V nC A thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDD06SG60C Package PG-TO252-3 Marking , T C=150 °C, t p=10 ms Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation , Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on
Infineon Technologies
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D06S60C

Abstract: IDB06S60C Diode forward voltage VF I F=6 A, T j=25 °C - 1.5 1.7 I F=6 A, T j=150 °C - 1.7 , IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , 5mA2) thinQ! 2G Diode designed for fast switching applications like: · CCM PFC · Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C D2PAK D06S60C C A Maximum , 10 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt dv/ dt
Infineon Technologies
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smd diode MARKING F6

Abstract: D06G60C I R=0.05 mA, T j=25 °C Diode forward voltage VF I F=6 A, T j=25 °C - 2.1 2.3 I , IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , 61249-2-21 definition thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 , 600 V Diode dv/dt ruggedness dv/ dt VR= 0.480 V 50 V/ns Power dissipation P
Infineon Technologies
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smd diode Uj
Abstract: characteristics DC blocking voltage V DC I R=0.05 mA, T j=25 ° C Diode forward voltage VF I F=6 , IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary â , ! 3G Diode designed for fast switching applications like: â'¢ SMPS e.g.; CCM PFC â'¢ Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD06SG60C , T j=25 ° C 600 V Diode dv/dt ruggedness dv/ dt VR= 0â'¦.480 V 50 V/ns Infineon Technologies
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Abstract: DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - , IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , '¢ Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: â'¢ CCM PFC â'¢ Motor Drives Type Package Marking Pin 1 Pin 2 IDB06S60C D2PAK (PG-TO220 , 600 V Diode ruggedness dv/dt dv/ dt VR=0â'¦480V 50 V/ns Power dissipation P Infineon Technologies
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D06S60C

Abstract: DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - , IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC â , '¢ Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: â'¢ CCM PFC â'¢ Motor Drives Type Package Marking Pin 1 Pin 2 IDB06S60C D2PAK (PG-TO263 , 600 V Diode ruggedness dv/dt dv/ dt VR=0â'¦480V 50 V/ns Power dissipation P
Infineon Technologies
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PG-TO263-3-2
Abstract: Product type marking code F6 CFRMT107-HF F7 Suggested PAD Layout SOD-123H SIZE (mm) A , Low Profile SMD Fast Recovery Rectifiers SMD Diodes Specialist CFRMT101-HF Thru. CFRMT107-HF , SMD package. -High current capability. -Fast switching for high efficiency. -High surge current , Typ. Diode Junction capacitance f=1MHz and applied 4V DC reverse voltage Operating junction , Page 1 QW-JF002 Comchip Technology CO., LTD. Low Profile SMD Fast Recovery Rectifiers SMD Comchip Technology
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UL94-V0 MIL-STD-750 101-HF 102-HF 103-HF 104-HF

smd diode MARKING F6

Abstract: SMD DIODE MARKING CODE F7 F5 F6 F7 XX xx = Product type marking code Suggested PAD Layout SOD-123H SIZE (mm) A B C D E , SMD Fast Recovery Rectifiers SMD Diodes Specialist CFRMT101-HF Thru. CFRMT107-HF Reverse , application in order to optimize board space. -Tiny plastic SMD package. -High current capability. -Fast , . Diode Junction capacitance f=1MHz and applied 4V DC reverse voltage IR 100 RJA CJ TJ TSTG 42 15 -55 , Technology CO., LTD. SMD Fast Recovery Rectifiers SMD Diodes Specialist Rating and Characteristic
Comchip Technology
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CFRMT106-HF SMD DIODE MARKING CODE F7 diode SMD MARKING CODE f4 smd code F7 DIODE F7 SMD SMD MARKING CODE f7 smd diode code F3 105-HF 106-F 107-HF CFRMT102-HF CFRMT103-HF CFRMT104-HF

smd diode MARKING F6

Abstract: Diode SMA smd code f4 Marking Code F1 F2 F3 F4 F5 F6 F7 COMCHIP SMD Diodes Specialist XX Suggested PAD Layout , SMD Fast Recovery Rectifiers COMCHIP SMD Diodes Specialist CFRM101-HF Thru. CFRM107-HF , surface mounted application in order to optimize board space. -Tiny plastic SMD package. -High current , RJA CJ TJ TSTG 150 42 15 -55 to +150 -65 to +175 250 500 O A nS C/W pF O Typical Diode , =0.25A REV:A QW-JF001 Page 1 Comchip Technology CO., LTD. SMD Fast Recovery Rectifiers Rating and
Comchip Technology
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CFRM104-HF Diode SMA smd code f4 Recovery Glass Passivated sod-123 diode marking f6 sod-123 SOD-123 device code f5 Diode SMA marking code f4 MIL-STD750 106-HF CFRM102-HF CFRM103-HF
Abstract: F4 CFRMT105-HF F5 CFRMT106-HF F6 CFRMT107-HF F7 XX xx = Product type marking , Low Profile SMD Fast Recovery Rectifiers CFRMT101-HF Thru. CFRMT107-HF Reverse Voltage: 50 to , . -Low profile package is 40% thinner than standards SOD-123. -Tiny plastic SMD package. -High current , ) IFSM 5.0 VR=VRRM TJ=25°C Max. Reverse current 25 IR Typ. Diode Junction capacitance f , ., LTD. Low Profile SMD Fast Recovery Rectifiers Rating and Characteristic Curves (CFRMT101-HF Thru Comchip Technology
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Abstract: ., LTD. COMCHIP SMD Fast Recovery Rectifiers SMD Diodes Specialist Marking Code Part Number , COMCHIP SMD Fast Recovery Rectifiers SMD Diodes Specialist CFRM101-G Thru. CFRM107-G , Reverse recovery time (note 1) Thermal resistance, junction to ambient air Diode junction capacitance , =0.25A REV:C Page 1 QW-BF006 Comchip Technology CO., LTD. COMCHIP SMD Fast Recovery Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CFRM101-G Thru. CFRM107-G) Fig.1 Forward Comchip Technology
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MIL-STD19500/228 101-G 102-G 103-G 104-G 105-G

SMF101MH

Abstract: smd diode MARKING F6 to optimize board space. Tiny plastic SMD package. High current capability. Fast switching for , .) C 0.60 1.00 F 0.30 (TYP.) MARKING Product Marking Code Product Marking Code SMF101MH F1 SMF105MH F5 SMF102MH F2 SMF106MH F6 SMF103MH F3 SMF107MH F7 , Diode Junction Capacitance (Note 1) CJ Maximum Reverse Recovery Time Trr Thermal resistance
SeCoS
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SMF104MH smf diode marking Diode smd code f4 SMD F5 DIODE DIODE MARKING CODE F4 marking code f4 DIODE marking code f6 DIODE SMF101MH-H 101MH 102MH 103MH 104MH
Abstract: ., LTD. SMD Fast Recovery Rectifiers Marking Code Part Number Marking Code CFRM101-G F1 , SMD Fast Recovery Rectifiers CFRM101-G Thru. CFRM107-G Voltage: 50 to 1000 Volts Current: 1.0 , ambient air Diode junction capacitance Operating junction temperature f=1MHz and applied 4V DC reverse , CO., LTD. SMD Fast Recovery Rectifiers Rating and Characteristic Curves (CFRM101-G Thru , :C Page 2 QW-BF006 Comchip Technology CO., LTD. SMD Fast Recovery Rectifiers Reel Taping Comchip Technology
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106-G 107-G CFRM102-G CFRM103-G CFRM104-G
Abstract: ., LTD. SMD Fast Recovery Rectifiers Marking Code Marking Code Part Number CFRM101-HF F1 , SMD Fast Recovery Rectifiers CFRM101-HF Thru. CFRM107-HF Voltage: 50 to 1000 Volts Current , application in order to optimize board space. -Tiny plastic SMD package. -High current capability. -Fast , Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Operating junction temperature , . SMD Fast Recovery Rectifiers Rating and Characteristic Curves (CFRM101-HF Thru. CFRM107-HF) Fig Comchip Technology
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CFRM105-HF CFRM106-HF

smd diode MARKING F6

Abstract: smd diode F6 Diodes SMD Type Zener Diodes BZX585 Series Features Total Power Dissipation: Max. 300mW , ( ) 5% (C) @ IZ = 1mA @ IZ = 5mA Temp. Coeff. SZ (mV/K) @ IZ = 5mA Diode Cap. Non-repetitive peak reverse Cd (pF) current @ IZSM (A) f = 1MHz; VR = 0V @ tp = 100 s Marking Min , 500 85 90 -1.9 370 6.0 C6 F6 4V3 4.21 4.39 4.09 4.52 410 600 , 275 6.0 C0 F0 2% 5% www.kexin.com.cn 1 Diodes SMD Type BZX585 Series
Kexin
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smd marking H6 diode smd ED 68 diode smd ED 84 smd diode E7 smd diode h9 bzx585 zener

D06G60C

Abstract: Diode smd f6 schottky IDH06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features · Revolutionary semiconductor , < 130 °C 600 8 2.1 6 V nC A thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDH06SG60C Package PG-TO220-2 Marking D06G60C Pin , voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque I F,max , , wavesoldering only allowed at leads R thJC R thJA SMD version, device on PCB, minimal footprint 1.6 mm (0.063 in
Infineon Technologies
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