NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (TYP.) C 0.60 1.00 F 0.30 (TYP.) MARKING Product Marking Code Product Marking Code SMF101MH SMF101MH F1 SMF105MH SMF105MH F5 SMF102MH SMF102MH F2 SMF106MH SMF106MH F6 SMF103MH SMF103MH F3 , to optimize board space. Tiny plastic SMD package. High current capability. Fast switching for , @TA=100°C Blocking Voltage 5.0 IR Diode Junction Capacitance (Note 1) CJ Maximum Reverse ... | Original |
3 pages, |
transistor smd code marking 420 DIODE F7 SMD SMD Transistor Marking Code F3 smd transistor marking f7 SMF104 SMF106MH marking code f4 DIODE marking code f6 DIODE SMD F5 DIODE smd marking f2 SMF104MH DIODE MARKING CODE F4 SMF101MH SMF107MH SMF101MH abstract |
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| Abstract: I R=0.05 mA, T j=25 °C Diode forward voltage VF I F=6 A, T j=25 °C - 2.1 2.3 I , IDD06SG60C IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , 61249-2-21 definition thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 , 600 V Diode dv/dt ruggedness dv/ dt VR= 0.480 V 50 V/ns Power dissipation P ... | Original |
7 pages, |
SMD F6 DIODE smd diode Uj JESD22 IDD06SG60C Diode smd f6 smd diode F6 Diode smd f6 schottky D06G60C smd diode MARKING F6 PG-TO252-3 IDD06SG60C abstract |
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| Abstract: IDB06S60C IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , 5mA2) thinQ! 2G Diode designed for fast switching applications like: · CCM PFC · Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C IDB06S60C D2PAK D06S60C D06S60C C A Maximum , 10 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt dv/ dt , , reflowsoldering @ 10sec T sold SMD version, device on PCB, minimal Footprint SMD version, device on PCB ... | Original |
7 pages, |
smd diode MARKING F6 JESD22 IDB06S60C D06S60C IDB06S60C abstract |
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| Abstract: IDD06SG60C IDD06SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , Optimized for high temperature operation · Lowest Figure of Merit QC/IF thinQ! 3G Diode designed for , Package Marking Pin 1 Pin 2 Pin 3 IDD06SG60C IDD06SG60C PG-TO252-3 PG-TO252-3 D06G60C D06G60C n.c. A C , Repetitive peak reverse voltage V RRM T j=25 °C 600 V Diode dv/dt ruggedness dv/ dt VR= , Conditions Unit min. typ. max. - - 2.1 SMD version, device on PCB, minimal ... | Original |
7 pages, |
JESD22 IDD06SG60C smd diode MARKING F6 D06G60C PG-TO252-3 IDD06SG60C abstract |
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| Abstract: DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - , IDB06S60C IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features V DC V , voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: · CCM PFC · Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C IDB06S60C D2PAK (PG-TO220-3-45 PG-TO220-3-45 , V Diode ruggedness dv/dt dv/ dt VR=0.480V 50 V/ns Power dissipation P tot ... | Original |
7 pages, |
JESD22 IDB06S60C D06S60C Diode smd f6 schottky IDB06S60C abstract |
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| Abstract: Diodes SMD Type Zener Diodes BZX585 BZX585 Series Features Total Power Dissipation: Max. 300mW , ( ) 5% (C) @ IZ = 1mA @ IZ = 5mA Temp. Coeff. SZ (mV/K) @ IZ = 5mA Diode Cap. Non-repetitive peak reverse Cd (pF) current @ IZSM (A) f = 1MHz; VR = 0V @ tp = 100 s Marking Min. , 500 85 90 -1.9 370 6.0 C6 F6 4V3 4.21 4.39 4.09 4.52 410 600 , 275 6.0 C0 F0 2% 5% www.kexin.com.cn 1 Diodes SMD Type BZX585 BZX585 Series ... | Original |
2 pages, |
marking HG Zener diode smd marking e4 smd diode h9 smd transistor marking f7 DIODE e5 SMD zener diode marking E7 smd diode marking 325 DIODE H5 SMD smd marking H6 smd diode E7 smd diode ED SMD F5 DIODE BZX585 BZX585 abstract |
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| Abstract: Gate-to-Source Voltage ±8.0 V dv/dt Peak Diode Recovery dv/dt ® 1.4 I -1.6 V/ns Tj.Tstg Junction and Storage , , for comparison to the other SMD devices. Micros Data Sheets reflecting improved thermal resistance and , later. See Appendix Ç (page 331) for part marking information. 203 IRF7507 IRF7507 Electrical Characteristics @ , , VGS - 0V, Tj - 125°C P-Ch - - f6 Vds - -16V, Vgs - 0V, Tj - 125°C Iqss Gate-to-Source Forward , Diode) N-Ch - - 0.78 A P-Ch _ - -0.78 Ism Pulsed Source Current (Body Diode) (D N-Ch _ _ 14 ... | OCR Scan |
8 pages, |
smd diode MARKING F6 p-ch mosfet smd MARKING code 1 A IRF7507 Diode SMD SJ 66A p-ch mosfet smd MARKING code A 1269C 1269C abstract |
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| Abstract: Marking. 4 Suggested solder pad layout. 4 , application in order to optimize board space. · T iny plastic SMD package. · High current capability. · , resistance Junction to ambient Diode junction capacitance f=1MHz and applied 4V DC reverse voltage , anode 1 Symbol 2 1 2 Marking Type number Marking code FFM101-MH FFM101-MH FFM102-MH FFM102-MH FFM103-MH FFM103-MH FFM104-MH FFM104-MH FFM105-MH FFM105-MH FFM106-MH FFM106-MH FFM107-MH FFM107-MH F1 F2 F3 F4 F5 F6 F7 Suggested solder pad ... | Original |
7 pages, |
transistor smd code marking 420 FFM101-MH FFM102-MH FFM103-MH FFM104-MH FFM105-MH FFM106-MH FFM107-MH smd diode MARKING F6 SMD F6 DIODE diode t25 4 F7 diode t25 4 F6 Diode smd f6 FFM101-MH abstract |
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| Abstract: Marking. 4 Suggested solder pad layout. 4 , application in order to optimize board space. · Tiny plastic SMD package. · High current capability. · , resistance Junction to ambient Diode junction capacitance f=1MHz and applied 4V DC reverse voltage , anode 1 Symbol 2 1 2 Marking Type number Marking code FFM101-M FFM101-M FFM102-M FFM102-M FFM103-M FFM103-M FFM104-M FFM104-M FFM105-M FFM105-M FFM106-M FFM106-M FFM107-M FFM107-M F1 F2 F3 F4 F5 F6 F7 Suggested solder pad ... | Original |
7 pages, |
transistor smd code marking 420 diode t25 4 F6 FFM101-M FFM102-M FFM103-M FFM104-M FFM105-M FFM106-M FFM107-M smd diode F6 smd diode MARKING F6 SMD F6 DIODE smd transistor marking f7 FFM101-M abstract |
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| Abstract: plastic SMD package. The diodes are available in the normalized E24 ± 2 % (BZX585-B BZX585-B) and ± 5 % (BZX585-C BZX585-C) tolerance range. MAM387 MAM387 The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523 , MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE EA BZX585-B43 BZX585-B43 EM Marking codes for BZX585-B2V4 BZX585-B2V4 to BZX585-B75 BZX585-B75 , TYPE NUMBER MARKING CODE TYPE NUMBER BZX585 BZX585 series MARKING CODE TYPE NUMBER ... | Original |
10 pages, |
BZX585-C5V1 BZX585-C39 BZX585-B75 BZX585-B3V6 BZX585-B3V3 BZX585-B3V0 BZX585-B2V7 BZX585-B2V4 H7 marking code smd BZX585 marking code H2 SMD MARKING CODE EA marking code EA SMD Transistor marking code H1 SMD Transistor M3D319 BZX585 M3D319 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| TRANSISTORS SERIES SMD PACKAGE FEATURES AND BENEFITS High voltage diode especially designed for horizontal Tj = 1005C 1005C 1005C 1005C 1 m A V F * I F =6A Tj = 255C 1.5 V Tj = 1005C 1005C 1005C 1005C 1.4 pulse test : * tp = 5 ms CHARACTERISTICS Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A dI F /dt ST | HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) Datasheet HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) DTV32G-1500B DTV32G-1500B DTV32G-1500B DTV32G-1500B www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599.htm |
STMicroelectronics | 20/10/2000 | 7.88 Kb | HTM | 4599.htm |
| SMD PACKAGE FEATURES AND BENEFITS High voltage diode especially designed for horizontal * V R = V RWM Tj = 255C 200 m A Tj = 1005C 1005C 1005C 1005C 1 m A V F * I F =6A Tj = 255C 1 Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A dI F /dt ST | HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) Datasheet HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) DTV32G DTV32G DTV32G DTV32G www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v3.htm |
STMicroelectronics | 25/05/2000 | 7.52 Kb | HTM | 4599-v3.htm |
| * I F =6A Tj = 255C 1.5 V Tj = 1005C 1005C 1005C 1005C 1.4 pulse test : * tp = 5 ms , d < 2% * tp = 380 m s, d < 2 A 140 ns RECOVERY CHARACTERISTICS Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A ST | HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) DTV32G-1500B DTV32G-1500B DTV32G-1500B DTV32G-1500B HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) Document Number: 4599 Date Update: 12 , F = 56 kHz) SUITABLE WITH BUH TRANSISTORS SERIES SMD PACKAGE FEATURES AND BENEFITS High voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v2.htm |
STMicroelectronics | 14/06/1999 | 5.67 Kb | HTM | 4599-v2.htm |
| * I F =6A Tj = 255C 1.5 V Tj = 1005C 1005C 1005C 1005C 1.4 pulse test : * tp = 5 ms , d < 2% * tp = 380 m s, d < 2 A 140 ns RECOVERY CHARACTERISTICS Symbol Test Conditions Min Typ Max Unit t fr (2) Tj = 1005C 1005C 1005C 1005C I F = 6 A ST | HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) DTV32G-1500B DTV32G-1500B DTV32G-1500B DTV32G-1500B HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) Document Number: 4599 Date Update: 12 , F = 56 kHz) SUITABLE WITH BUH TRANSISTORS SERIES SMD PACKAGE FEATURES AND BENEFITS High voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v1.htm |
STMicroelectronics | 02/04/1999 | 5.71 Kb | HTM | 4599-v1.htm |
| A V F * Forward voltage drop Tj = 25 5 C I F = 3 A 0.63 V Tj = 25 5 C I F = 6 A 0.84 Tj = 125 5 C I F = 3 A 0.5 0.57 Tj = 125 5 C I F = 6 A 0.67 0.72 Pulse test : * tp = 380 m s PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE (tape and reel option: -TR s ABSOLUTE RATINGS (limiting values, per diode) A1 A1 K K A2 A2 TO-220AB STPS640CT STPS640CT STPS640CT STPS640CT -220AB/ -220AB/ -220AB/ -220AB/ DPAK Per diode Total 5.5 3 5 C/W ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Per diode Total 7.5 5.2 R th www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3628.htm |
STMicroelectronics | 20/10/2000 | 10.47 Kb | HTM | 3628.htm |
| voltage drop Tj = 25 5 C I F = 3 A 0.63 V Tj = 25 5 C I F = 6 A 0.84 Tj = 125 5 C I F = 3 A 0.5 0.57 Tj = 125 5 C I F = 6 A 0.67 0.72 Pulse test : * tp = 380 m s, d < 2% To evaluate the maximum conduction : Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE (tape and reel option: -TR) FEATURES AND V/dt Critical rate of rise of reverse voltage 10000 V/ m s ABSOLUTE RATINGS (limiting values, per diode) A1 A1 -c) Junction to case TO-220AB/ DPAK Per diode Total 5.5 3 5 C/W ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Per diode Total 7.5 5.2 R th www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3628-v2.htm |
STMicroelectronics | 14/06/1999 | 8.16 Kb | HTM | 3628-v2.htm |
| voltage drop Tj = 25 5 C I F = 3 A 0.63 V Tj = 25 5 C I F = 6 A 0.84 Tj = 125 5 C I F = 3 A 0.5 0.57 Tj = 125 5 C I F = 6 A 0.67 0.72 Pulse test : * tp = 380 m s, d < 2% To evaluate the maximum conduction : Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE (tape and reel option: -TR) FEATURES AND V/dt Critical rate of rise of reverse voltage 10000 V/ m s ABSOLUTE RATINGS (limiting values, per diode) A1 A1 -c) Junction to case TO-220AB/ DPAK Per diode Total 5.5 3 5 C/W ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Per diode Total 7.5 5.2 R th www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3628-v1.htm |
STMicroelectronics | 02/04/1999 | 8.2 Kb | HTM | 3628-v1.htm |
| F = 6 A 0.84 Tj = 125 5 C I F = 3 A 0.5 0.57 Tj = 125 5 C I F = 6 A 0.67 0 F SMD PACKAGE (tape and reel option: -TR) FEATURES AND BENEFITS Dual Schottky rectifier suited to RATINGS (limiting values, per diode) A1 A1 K K A2 A2 TO-220AB STPS640CT STPS640CT STPS640CT STPS640CT ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB AB/ DPAK Per diode Total 5.5 3 5 C/W ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Per diode Total 7.5 5.2 R th (per diode) 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tamb(5C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3628-v3.htm |
STMicroelectronics | 25/05/2000 | 9.95 Kb | HTM | 3628-v3.htm |
| Output Compare 1 30 NC Not Connected 31 19 19 14 PF6 (HS)/ICAP1_A I/O C T HS X X X X Port F6 Timer A true open drain I/O (P-Buffer and protection diode to V DD are not implemented). See Section 11 "I www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6816.htm |
STMicroelectronics | 09/02/2001 | 287.83 Kb | HTM | 6816.htm |
| Compare 1 30 NC Not Connected 31 19 19 14 PF6 (HS)/ICAP1_A I/O C T HS X X X X Port F6 Timer A true open drain I/O (P-Buffer and protection diode to V DD are not implemented). See Section 11 "I www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6816-v2.htm |
STMicroelectronics | 02/11/2000 | 275.91 Kb | HTM | 6816-v2.htm |