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UDT020A0X3-SRZ GE Critical Power CONV DIGITAL 5.5V 20A POL SMD visit GE Critical Power
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ISL91106AIIAZ-T Intersil Corporation High Efficiency Buck-Boost Regulator with 4.2A Switches and Bypass Mode; WLCSP15; Temp Range: -40° to 85°C visit Intersil Buy
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ZL2106ALCFT Intersil Corporation 6A Digital-DC Synchronous Step-Down DC/DC Converter; QFN36; Temp Range: -40° to 85°C visit Intersil Buy
ZL2106ALCF Intersil Corporation 6A Digital-DC Synchronous Step-Down DC/DC Converter; QFN36; Temp Range: -40° to 85°C visit Intersil Buy
ZL2106ALCFTK Intersil Corporation 6A Digital-DC Synchronous Step-Down DC/DC Converter; QFN36; Temp Range: -40° to 85°C visit Intersil Buy
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments

smd diode 106a

Catalog Datasheet MFG & Type PDF Document Tags

smd diode 106a

Abstract: smd 106a The BYG 90-90 is a S chottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular S O D 106A plastic SMD package. · Guard ring protected · P lastic SM D , DISCRETE SEMICONDUCTORS GMTâ SlnlEET BYG90-90 Schottky barrier rectifier diode Product , barrier rectifier diode FEATURES · Low sw itching losses · High breakdow n voltage · C apability of , Ir s m Tstg Tj Notes 1. 2. R efer to S O D 106A standard m ounting conditions. For S chottky b
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smd diode 106a smd 106a

smd diode 106a

Abstract: smd 106a Philips Semiconductors Product specification Schottky barrier rectifier diode FEATURES · Low , time · Guard ring protected · Plastic SMD package. BYG90-90 DESCRIPTION The BYG90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier / - W - APPLICATIONS · Low power , rectifier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER
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SOD106A diode t37 philips Schottky diode very high current schottky diode schottky barrier schottky barrier rectifier diode 15 A D1G3223

smd diode 106a

Abstract: DIODE MARKING B85 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90 , · Fast recovery time · Guard ring protected · Plastic SMD package. APPLICATIONS · Low power , barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier / Fig. 1 Simplified outline (SOD1Q6A) and symbol , Philips Semiconductors Product specification Schottky barrier rectifier diode ELEC TR IC AL
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01032B3 DIODE MARKING B85 smd diode byg byg 100 diode smd diode 1S B85 diode smd diode byg 20
Abstract: Bulletin I2210 03/05 SAFEIR Series 25ETS12SPbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix , www.irf.com D2 Pak (SMD-220) 1 25ETS12SPbF SAFEIR Series Bulletin I2210 03/05 Voltage Ratings , 106° C, 180° conduction half sine wave Max. Peak One Cycle Non-Repetitive 250 Surge Current , ) Mounting surface, smooth and greased Kg-cm (Ibf-in) D2Pak (SMD-220) 25ETS12S www.irf.com , D Pak (SMD-220) Dimensions in millimeters and inches 2.54 (0.10) 2X Marking Information International Rectifier
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25ETS12SP SMD-220 25ETS

4N0605

Abstract: smd diode 106a DS 60 V R DS(on),max (SMD version) 5.4 m ID 80 A Features · N-channel - , - 1.4 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD , =80A, SMD version - 4.4 5.4 Rev. 1.0 page 2 2009-03-24 IPB80N06S4-05 IPI80N06S4 , =0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=80A, T j=25°C 0.6 0.95 1.3 V
Infineon Technologies
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IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 4N0605 107 10V smd smd diode marking DD PG-TO262-3-1 PG-TO220-3-1
Abstract: Bulletin I2210 03/05 SAFEIR Series 25ETS12SPbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix , Document Number: 94342 D2 Pak (SMD-220) www.vishay.com 1 25ETS12SPbF SAFEIR Series Bulletin , Forward Current IFSM Conditions @ TC = 106° C, 180° conduction half sine wave Max. Peak One , ) D2Pak (SMD-220) 25ETS12S www.vishay.com 2 25ETS12SPbF SAFEIR Series 150 Maximum Allowable , ) 2X 2 D Pak (SMD-220) Dimensions in millimeters and inches 2.54 (0.10) 2X Marking International Rectifier
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Abstract: Bulletin I2158 rev. A 08/02 SAFEIR Series 25ETS.S INPUT RECTIFIER DIODE Description , 25°C TJ D2 Pak (SMD-220) (*) for higher voltage up to 1600V contact factory Document , Conditions @ TC = 106° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine , surface, smooth and greased Kg-cm (Ibf-in) D2Pak (SMD-220) www.vishay.com 2 25ETS.S SAFEIR , (0.961) SMD-220 Tape & Reel When ordering, indicate the part number, part orientation, and the International Rectifier
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25ETS08S
Abstract: PD-94150A HFB25HJ20 HEXFRED Ultrafast, Soft Recovery Diode TM Features â'¢ â'¢ â'¢ â'¢ â'¢ VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of , 25 150 70 -55 to +150 Cathode to Anode Voltage Continuous Forward Current, Q TC = 106Â , CASE STYLE SMD-0.5 www.irf.com CATHODE ANODE ANODE 1 03/23/01 HFB25HJ20 , Definitions Case Outline and Dimensions â'" SMD-0.5 HEXFRED SINGLE DIE IR WORLD HEADQUARTERS: 233 International Rectifier
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Abstract: PD-94150B HFB25HJ20 Ultrafast, Soft Recovery Diode FRED Features â'¢ â'¢ â'¢ â'¢ â'¢ VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters , 70 -55 to +150 Cathode to Anode Voltage Continuous Forward Current, Q TC = 106°C Single Pulse , SMD-0.5 www.irf.com CATHODE ANODE ANODE 1 7/9/01 HFB25HJ20 Electrical , Waveform and Definitions Case Outline and Dimensions â'" SMD-0.5 IR WORLD HEADQUARTERS: 233 Kansas St International Rectifier
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Abstract: PD-94150 HFB25HJ20 HEXFRED Ultrafast, Soft Recovery Diode TM Features â'¢ â'¢ â'¢ â'¢ â'¢ VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of , 25 150 70 -55 to +150 Cathode to Anode Voltage Continuous Forward Current, Q TC = 106Â , CASE STYLE SMD-0.5 www.irf.com CATHODE ANODE ANODE 1 03/12/01 HFB25HJ20 , Waveform and Definitions Case Outline and Dimensions â'" SMD-0.5 HEXFRED SINGLE DIE IR WORLD International Rectifier
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p0603v24

Abstract: Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A) Tolerance - Edge To , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems
Protek Devices
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p0603v24 P0603V24 IEC61000-4-2
Abstract: Clean Pad Protective Finish OSP (Entek Cu Plus 106A) Tolerance - Edge To Corner Ball ±50µm , voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems from numerous Protek Devices
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DFN-0603
Abstract: ) 0.330mm Round Solder Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems Protek Devices
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P0402V
Abstract: Plus 106A) Tolerance - Edge To Corner Ball ±50µm Solder Ball Side Coplanarity ±20µm , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems Protek Devices
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pn0307

Abstract: diode d v/dt IS=50A, VDS=24V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC , resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3 , limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed , ) VDD =24V, ID =50A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr
Infineon Technologies
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pn0307 SPD50N03S2-07 PN0307 QS-0Z-2008 PD50N03S2-07 PG-TO252-3

smd diode 106a

Abstract: TRANSISTOR SMD MARKING CODE 7A ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/µs IS =12.7A, VDS =24V, di/dt=200A/µs , resistance, junction - soldering point RthJS SMD version, device on PCB: K/W RthJA Electrical , VGS =4.5V, ID =10.6A Drain-source on-state resistance VGS =10V, ID=12.7A 1Device on 40mm*40mm , 5V Output charge Qoss VDS =15V, ID =12.7A, VGS =0 Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed
Infineon Technologies
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BSO4822 TRANSISTOR SMD MARKING CODE 7A Q67042-S4095

smd diode 106a

Abstract: Q67042-S4166 =25°C Avalanche energy, single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/µs IS , RthJC SMD version, device on PCB: K/W RthJA @ min. footprint @ 6 cm 2 cooling area 1 , on-state resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer , VDD =-80V, ID =-15A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward
Infineon Technologies
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SPP15P10P Q67042-S4166 P-TO220-3-1

BSO4822

Abstract: smd diode 106a energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/µs IS =12.7A , 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device , VGS =20V, VDS=0 Drain-source on-state resistance VGS =4.5V, ID =10.6A Drain-source on-state , Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, IF=1.9A - 0.83 1.2 V
Infineon Technologies
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smd diode 106a

Abstract: =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =12.7A, VDS =24V, di/dt=200A/µs, Tjmax , Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min , , VDS =0V Drain-source on-state resistance VGS =4.5V, ID=10.6A Drain-source on-state resistance , VDS =15V, ID =12.7A, VGS =0V V(plateau) VDD =15V, ID=12.7A V Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse
Infineon Technologies
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Abstract: =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C , Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm , Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery Infineon Technologies
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PG-TO220-3 15P10P

pn0307

Abstract: DS102 , V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS , , junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol , limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed , V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF
Infineon Technologies
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DS102 P-TO252-3-11 Q67040-S4430
Abstract: , single pulse mJ ID =50A, VDD =25V, RGS =25 #1; Reverse diode dv/dt kV/µs IS =50A, VDS , , leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - , is able to carry I D=106A. #1; Gate resistance 2See figure 3. 3T =150°C for V jmax GS , Charge total, Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Infineon Technologies
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IPD05N03LA Q67042-S4144 05N03LA

15P10P

Abstract: SPP15P10P , single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/µs IS =-15A, VDS , - - 75 - - 45 Characteristics Thermal resistance, junction - case RthJC SMD , =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper , plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94
Infineon Technologies
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pn0307

Abstract: ANPS071E Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate , , leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS
Infineon Technologies
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BSPD50N03S2-07 ANPS071E

smd diode 106a

Abstract: D106A /µs V W °C Avalanche energy, single pulse ID =50A, VDD =25V, RGS =25 Reverse diode dv/dt IS , Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 , 1Current limited by bondwire; with an R thJC = 1.6K/W the chip is able to carry I D=106A. jmax GS , charge Gate Charge total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery charge 1See
Infineon Technologies
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D106A 05n03l

BSO4822

Abstract: energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/µs IS , soldering point RthJS SMD version, device on PCB: K/W RthJA 10 sec. @ 6 cm 2 cooling area , Gate-source leakage current VGS =20V, VDS=0V VGS =4.5V, ID=10.6A Drain-source on-state resistance , charge Qoss VDS =15V, ID =12.7A, VGS =0V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode
Infineon Technologies
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pn0307

Abstract: smd diode 106a Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate , , leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS
Infineon Technologies
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TO252 rthjc TO252 thermal character
Abstract: Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot , - 0.7 1.1 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD , able to carry ID= 106A at 25° for detailed C, information see app.-note ANPS071E available at , plateau voltage Reverse Diode Inverse diode continuous TC=25° C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=50A - 0.9 Infineon Technologies
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pn0307

Abstract: ANPS071E resistance, junction ambient, leaded R thJA - - 100 SMD version, device on PCB R thJA , D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - , able to carry 106A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com , . capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD
Infineon Technologies
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IPD50N03S2-07 PG-TO252-3-11 D-85579

smd diode 106a

Abstract: Q67042-S4166 , single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/µs IS =-15A, VDS , - - 75 - - 45 Characteristics Thermal resistance, junction - case RthJC SMD , =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper , plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94
Infineon Technologies
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PN0307

Abstract: INFINEON PART MARKING Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate , ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , VDD =24V, ID =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward
Infineon Technologies
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INFINEON PART MARKING INFINEON PART MARKING to252

marking code INFINEON TO252

Abstract: Tjmax 2) Reverse diode dv/dt IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C EAR dv/dt 13 6 kV/µs , resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min , able to carry I D= 106A at 25°C, for detailed information see app.-note ANPS071E available at , 21.1 46.5 V V(plateau) VDD =24V, ID=50A Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery
Infineon Technologies
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marking code INFINEON TO252

smd diode 106a

Abstract: =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C , Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling , resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm , Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS
Infineon Technologies
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1614G

Abstract: =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C , Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm , Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery
Infineon Technologies
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1614G
Abstract: - 1.1 Thermal resistance, junction ambient, leaded R thJA - - 100 SMD version , Characteristics2) V DD=24 V, I D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j , /W the chip is able to carry 106A at 25°C. For detailed information see Application Note ANPS071E , j [°C] 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = Infineon Technologies
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mp2a5100

Abstract: ya868c12 Information Diode, in figure 4, provides output protection, and dissipates the energy stored in the voice , Pads 0.325mm Round 0.125 ~ 0.150mm 0.330mm Round 50/50 By Volume No Clean OSP (Entek Cu Plus 106A) ±50m , ~ 0.150mm 0.360mm Round 50/50 By Volume No Clean OSP (Entek Cu Plus 106A) ±50m ±20m Reflow , is attached) is smaller than the solder mask opening. Solder mask defined (SMD). The solder mask , Figure21. Figure 21. Cross-Sections of NSMD and SMD Pads/Land Patterns FP5512-0.2-MAY-2012 14
Fuji Electric
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mp2a5100 ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 RH011 2007-10B120FIS

FP5512

Abstract: diode SD4 . 9 ISEN Input Current Sense Input Current Sense Non-Inverting Input: Connect to diode bridge , Schottky diode to GND, and a 0.22µF capacitor to HOLD. 10 GND Power Ground System Ground 11 , perfectly sinusoidal and the diode bridge ideal. This yields a perfect rectified sinusoid at the input to , : The output voltage reflected to the primary is defined: Switching Diode The main switching diode , VRD-MAX ­ Maximum Diode Blocking Voltage ID-MAX ­ Maximum Diode Average Current ID-PK-MAX ­ Maximum
Fitipower Integrated Technology
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FP5512 diode SD4 0X18H autofocus lens control system in camera 0.4mm pitch flip chip 256 pin WLCSP chip mount FP5512CP-6

220V 350mA LED driver

Abstract: Ac 230v to Dc 12v led driver with pwm dimming Dimensions Typical TC =30°C TPCB=36°C TC =54°C TPCB=65°C TC =80°C TPCB=106°C Notes , divider R30, R32 and R34 are used to program a threshold . An external reverse blocking diode D8 is , exceeds 82V. The threshold is determined by a Zener diode Z9. OVP protects the board from harmful , amplifier if the bus voltage between GND and -B falls below a voltage set by Zener diode Z8. www.irf.com , -ND D5, D6, D13, D14 CAP 10UF 16V ELECT FC SMD CAP .10UF 400V METAL POLYPRO CAP CERAMIC 1000PF 200V
National Semiconductor
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LM3409 220V 350mA LED driver Ac 230v to Dc 12v led driver with pwm dimming 220v 350ma led circuit transformer 230V 16V 350mA Simple Circuit Diagram of 230V to 3V Voltage Converter 2 PHASE 220V AC to 120V DC regulated switching LM3450 120VAC 230VAC 90VAC 135VAC

200w audio amplifier circuit diagram class D

Abstract: IRAUD Non-Inverting Input: Connect to diode bridge return and resistor to GND to sense input current for dynamic hold. Connect a 0.1µF capacitor and Schottky diode to GND, and a 0.22µF capacitor to HOLD. Gate Drive Output , a Zener diode as shown in Figure 7. This secondary softstart circuit has no restart mechanism , . Finally, a small Schottky diode should be placed from GND to ISEN to absorb the large current spikes associated with the triac firing edge. This diode should have a forward voltage above 200mV at the
International Rectifier
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IRS20957S 200w audio amplifier circuit diagram class D IRAUD diagram for a 12v 250w power amplifier 250w audio amplifier circuit diagram IRF6785

voltage regulator triac DIAC 220v ac

Abstract: circuit diagram of 60 LED bulbs in 230v . Input Current Sense Non-Inverting Input: Connect to diode bridge return and resistor to GND to sense input current for dynamic hold. Connect a 0.1µF capacitor and Schottky diode to GND, and a 0.22µF , and a Zener diode as shown in Figure 7. CCMP is placed from COMP to GND for high frequency noise , maximum of 0.47µF should ensure good performance. Finally, a small Schottky diode should be placed from GND to ISEN to absorb the large current spikes associated with the triac firing edge. This diode
National Semiconductor
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voltage regulator triac DIAC 220v ac circuit diagram of 60 LED bulbs in 230v 230v led bulb schematic DIAC Opto-Isolator ac single phase 220v low power factor improve circuit diagram 220v to 5v triac diac led LM3450/50A LM3450A

LM3450

Abstract: DIAC Opto-Isolator Drive Input Current Sense Non-Inverting Input: Connect to diode bridge return and resistor to GND to sense input current for dynamic hold. Connect a 0.1µF capacitor and Schottky diode to GND, and a , using a capacitor, two diodes and a Zener diode as shown in Figure 8. This secondary softstart circuit
National Semiconductor
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reverse phase dimmer D12/diode LP sd dimmer 230V circuit diagram ramp 100Hz dimmer PWM circuit dimmer zero crossing pwm dimmer

led 230v application

Abstract: dimming command. Input Current Sense Non-Inverting Input: Connect to diode bridge return and resistor to GND to sense input current for dynamic hold. Connect a 0.1µF capacitor and Schottky diode to GND , diode as shown in Figure 23. This secondary softstart circuit has no restart mechanism, therefore a
Texas Instruments
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led 230v application SNVS681C ISO/TS16949
Abstract: over-voltage protection and shutdown modes. Input Current Sense Non-Inverting Input: Connect to diode bridge , Schottky diode to GND, and a 0.22µF capacitor to HOLD. System Ground MosFET Current Sense Input: Connect to , amplifier, a soft-start circuit can be implemented using a capacitor, two diodes and a Zener diode as shown , line transients. A maximum of 0.47µF should ensure good performance. Finally, a small Schottky diode , edge. This diode should have a forward voltage above 200mV at the worst-case operating temperature so Texas Instruments
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SNVS681D

transistor SMD c5c

Abstract: dimming command. Input Current Sense Non-Inverting Input: Connect to diode bridge return and resistor to GND to sense input current for dynamic hold. Connect a 0.1µF capacitor and Schottky diode to GND , diode as shown in Figure 23. This secondary softstart circuit has no restart mechanism, therefore a
Texas Instruments
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transistor SMD c5c

led 230v application

Abstract: over-voltage protection and shutdown modes. Input Current Sense Non-Inverting Input: Connect to diode bridge , Schottky diode to GND, and a 0.22µF capacitor to HOLD. System Ground MosFET Current Sense Input: Connect to , amplifier, a soft-start circuit can be implemented using a capacitor, two diodes and a Zener diode as shown , line transients. A maximum of 0.47µF should ensure good performance. Finally, a small Schottky diode , edge. This diode should have a forward voltage above 200mV at the worst-case operating temperature so
Texas Instruments
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220V 350mA LED driver

Abstract: voltage regulator triac DIAC 220v ac dimming command. Input Current Sense Non-Inverting Input: Connect to diode bridge return and resistor to GND to sense input current for dynamic hold. Connect a 0.1µF capacitor and Schottky diode to GND , diode as shown in Figure 23. This secondary softstart circuit has no restart mechanism, therefore a
National Semiconductor
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220V 700mA LED driver k3568 triac 250v. 1a. to 92 50 to 60 hz 1.5v 50ma sod-123 NPN Transistor 600V NXP firing circuit of triac using diac 220v
Abstract: dimming command. Input Current Sense Non-Inverting Input: Connect to diode bridge return and resistor to GND to sense input current for dynamic hold. Connect a 0.1µF capacitor and Schottky diode to GND , diode as shown in Figure 23. This secondary softstart circuit has no restart mechanism, therefore a Texas Instruments
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Abstract: . In larger systems a zener diode circuitry might be required, when motors are operated at high , 66 50 33 20 0 1.50A 1.20A 1.00A 0.75A 0.50A 0.30A 0A 1.06A 0.85A 0.71A 0.53A , two free places for 0805 SMD resistors to be equipped directly on the module TMCM-013. To enable Texas Instruments
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DIODE SMD v105

Abstract: OPTOCOUPLER 4-PIN failure modes 5.08mm Model 9081 H = 8, W = 22.6, D = 6.98mm Coil suppresion diode option protects coil drive circuits , , 9002 10W 200V 0.5A 1.5A 125mohm 1000Gohm 0.35/0.10 1000 x 106 operations -20 to +85°C Feature Diode Form B contacts Diode Diode Diode Diode 9007, 9081 10W 200V 0.5A 1.0A 200mohm 10Gohm 0.50/0.20 100 x , Model 9091 UL Recognised Coil suppresion diode option protects coil drive circuits Model 9091 Magnet , Code 108-1687 108-1625 Feature Diode 9091 10W 200V 0.5A 1.5A 125mohm 1000Gohm 0.5/0.3 500 x 106
Trinamic Motion Control
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DIODE SMD v105 OPTOCOUPLER 4-PIN failure modes RS485-Timeout pc based dc motor control using chopper 24v linear stepper motor PD013-42 TMCM-013-LA RS485

relay finder 45.61

Abstract: reed 3500 2301 151 the pass transistors. Finally, the 12V Zener diode protects against power surges on the ­12V rail , shown above, the 3.3V current limit will be 10.6A, and the 5V limit will be 7.6A. Upon removal, the , ELECTRO HFS CON_MICTOR_38PI 2-767004-2 N_2-7 67004-2-BAA TSE REFERENCE DESIGN CAP ELECTRO VA SMD 50V 20% 220UF 38 PIN SIGNAL CONNECTOR, MATCHED IMPEDANCE, 0.025, SMD COMPACT PCI ESD STRIP
Element14 Catalog
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relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay A331-1-C2A7M A331-1-C2-A73 A331-1-C2-A7D

XC9572XL-TQ100

Abstract: plx vhdl code . 9802-05-20 9814-05-00 Reed Relays - Coto Reed - SIL Coil suppresion diode option protects coil drive , suppresion diode option protects coil drive circuits Magnet shield reduces interaction Model 9091 H = , /release ms (max) Life (Typical) Temperature, operating Feature Mftrs. List No. 9091-12-01 Diode 0.5/0.3 500 x 106 operations -20 to +85°C Order Code Feature 108-1626 Diode 418401 Ω  , Feature Mftrs. List No. Order Code Feature 9007-12-01 108-1623 Diode Diode 9001-12-00 108-1679
PMC-Sierra
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XC9572XL-TQ100 plx vhdl code transistor smd bc rn 100LVEL14 PCI9054-AA50PI xc9572xl pin configuration PM5372 PMC-1991247 PMC-991247 PMC-990713

48V 30A SPDT RELAY

Abstract: schematic diagram 230VAC to 24VDC POWER SUPPLY conditions. In larger systems a zener diode circuitry might be required, when motors are operated at high , 66 50 33 20 0 1.50A 1.20A 1.00A 0.75A 0.50A 0.30A 0A 1.06A 0.85A 0.71A 0.53A
Farnell Electronics
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48V 30A SPDT RELAY schematic diagram 230VAC to 24VDC POWER SUPPLY PCH-124 N mosfet 250v 600A marking code W16 SMD Transistor PA66 - GF 25 relay

p 621 Opto coupler data

Abstract: NEMA-17 oscillations in the pass transistors. Finally, the 12V Zener diode protects against power surges on the ­12V , / R sense In the circuit of Figure 4 above, the 3.3V current limit will be 10.6A, and the 5V
Trinamic Motion Control
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p 621 Opto coupler data NEMA-17 SPI 115 usb 6224 USB-2-485 62110

smd TRANSISTOR 2F6

Abstract: sot223 transistor p38 BSR33TA 211409 Hybrid Transistors Arrays Bipolar + Diode Packages SMD Packages containing a bipolar , Leads: g2 SOT-103 d b TO-3 e e TO-5 b c Low Power Bipolar Transistors - SMD (Ptot to 1.0W , www.farnell.co.uk Over 500,000 products with real-time stock availability Low Power Bipolar Transistors - SMD , 270 220 250 270 270 300 300 300 300 220 220 82 150 200 200 PNP & NPN version Ultra small SMD package , products with real-time stock availability Low Power Bipolar Transistors - SMD (Ptot to 1.0W) - continued
PMC-Sierra
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smd TRANSISTOR 2F6 sot223 transistor p38 transistor smd ad p28 yb4 bridge diode TRANSISTOR SMD K27 w31 smd transistor PM5316/PM5310 PMC-1991245 SPECTRA-4X155

irfb4115

Abstract: BTY79 equivalent L Q R RP U Y = = = = = = = = = = Capacitor Connector Diode Fuse Inductor Transistor Resistor , 16V 0805 Y5V(NU) D6 DIODE STKY EC20QS03L 30V 2A SMT NI 1 2 3 VCORE_PGround >40mil >40mil , DIODE STKY CH751H-40 40V 0.03A SOD-323 CHENMKO 0.1uF 50V 10% 0805 X7R D9 N 1M 5% 1/16W 0603 C479 R515 2K 5% 1/16W 0603 C81 R171 N D8 DIODE STKY CH751H-40 40V 0.03A SOD-323 CHENMKO U22 12 22 23 24 30 29 , S L12 R162 RES 1m 5% 2W MF SMT7520 RL7520WT-R003-J CYNTEC D27 DIODE ZENER RLZ2.4B 2.53V 0.02A 4
Element14 Catalog
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irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g SSC-25 F155-6A F155-10A F165-15A F175-25A

TPA2020

Abstract: ISS355 MOUNTING PROCESSES AND OCCURRING IN ACTUAL USE 5.5.1 RELIABILITY OF SURFACE MOUNTED DEVICES (SMD , ) Diode (Au electrode) 1.5eV[9] Au electromigration Transistor (Microwave) 0.6eV[10
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TPA2020 ISS355 fairchild diode aa14 max1987 diode BUG C332 Maxim MAX1987 NO266 1617A ITP700FLEX CY28346ZC SKQGADE010/ALPS FCM1608K-601T02

ed28 smd diode

Abstract: diagram of high frequency pvc welding machine input (5V) - Programmable current limit - Internal 180m ideal diode with external ideal diode , Voltage limited to rating of external FET and diode ̇ Linear regulators - 3x at 150mA, 0.75V to 3.7V , Diode from VBAT to VSYS . 68  Charger â'" Charger / Discharger , â'" Electrical Specifications .106  Boost5 â'" Typical Performance Characteristics.106  Boost5 â'" Register Settings .107  Boost5 â
Mitsubishi
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ed28 smd diode diagram of high frequency pvc welding machine hv 102 mos fet transistor Ultrasonic Cleaner schematic engel injection machines schematic diagram of electric cookers SSD82-39 MIL-STD-883D ED-4701-1 C-113
Abstract: (SMD) sind in Kapitel 5 aufgelistet -jeweils nach ihrem Kennzeichen zwecks Identifizierungi und , DIODE TRANSISTOR INC. DIT DIODES INC. Dll DIOTEC ELECTRONICS CORP. DIO DIOTEC ELEKTRONISCHE , GEC PLESSEY SEMICONDUCTORS Power Division AEI GENERAL DIODE CORP. GED GE / GENERAL ELECTRIC (USA , INTERFET INF INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL , OPTO DIODE CORP. OPD OSHINO LAMPS LTD. OSH OXLEY DEVELOPMENTS Co.Ltd. OXL o Have BS9000/CECC Integrated Device Technology
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IDTP95020

IGBT M16 100-44

Abstract: Kt606 IN ACTUAL USE 5.5.1 RELIABILITY OF SURFACE MOUNTED DEVICES (SMD) 3.5.5.1.1 CHANGES IN THE FORM OF
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OCR Scan
IGBT M16 100-44 Kt606 transistor 8BB smd ASEA HAFO AB SEMICON INDEXES GM378 VV276

ecg semiconductors master replacement guide

Abstract: transistor SMD marked RNW -35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 Germanium Diode Germanium Diode 100mA 100V Rectifier SMD Signal Diode Si Signal Diode Si Signal Diode SMD Signal Diode , Diode Signal Diode 12 Amp 800V 12 Amp 1000V 12 Amp 1000V 35 Amp 800V SMD 1Amp 200 PRV SMD 1Amp 400 PRV Si Signal Diode SMD Signal Diode SMD Signal Diode Si Signal Diode SMD Signal Diode Si Signal Diode Si Signal Diode SMD Signal Diode Si Signal Diode SMD Signal Diode SMD Signal Diode Si
Mitsubishi
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ecg semiconductors master replacement guide transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam IX-14 IX-16 IX-15

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
Mouser Catalog
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220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide diac 3202 bta16 6008 csr1000

induction cooker fault finding diagrams

Abstract: compressor catalogue .290-291,298 SMD
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OCR Scan
induction cooker fault finding diagrams compressor catalogue Vernitron TRANSDUCER b2 SPICE model NTC Inrush Current Limiters Thermistor str 1265 smps power supply circuit of tv XR558CP

22B4 diode ZENER

Abstract: smk 1350 transistor , , (SMD). , , , . , , . . . , , , , PHILIPS SOD80. SOD15 SGS-Thomson 7043 SMC, (. 2 « (SMD)». SOD80 7343 SMC SOD15 , « (SMD)» 103, 10 , ­ 10 10 . 2R2, 2.2 , 2.2 . 107 0.1 , ), , . 11. (IEC) ­ . , SMD-, 8 . 1:23 182 , :0R6 ­ 80.6 . 12. SOT (SOD) ­ Small Outline Transistor (Diode) - « () ». SOT , , . , .
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MAX4172 22B4 diode ZENER smk 1350 transistor 88E1111 BCC package C3333 SIL1162 LS650 MPC7447A 400PIN PD720101 PCI1510 LMC7211 NC7S32

NIKKO NR 9600

Abstract: Triac bt 808 600cw , 520, 524-525, 528 Lanterns, Flashlights. . . . . . . . . . . . . . . . . . . . . . 451 Laser Diode , , 499-500 Photo Transistor Output . . . . . . . . . . . . 493-499 Pin Photo Diode . . . . . . . . . . . .
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NIKKO NR 9600 Triac bt 808 600cw GDS C25/0 BT135 2U12 sony KSM 213 DCP

TRIAC 97A6

Abstract: S0805BH Thermal Diode Connectors FUNC_TEST I433 I568 I567 I443 I442 I520 I521 Other Func Test Points
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TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C BT 808 600C 100/V

Nokia E7 block diagram

Abstract: bbu 3900 Thermal Diode Connectors FUNC_TEST I553 I554 Other Func Test Points FUNC_TEST 51 87 51 51 87 51 51
Active-Semi
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Nokia E7 block diagram bbu 3900 ACT5880 OUT10 OUT11 OUT12 OUT13

c6073

Abstract: C6074 24 44 82 24 44 82 7 8 44 46 49 53 57 78 24 44 82 24 44 82 Thermal Diode Connectors FUNC_TEST
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c6073 C6074 C6091 C6089 ar9103 1CA033 PMU05 R9103 R9200 R9220 R9221 R9250

C6073

Abstract: SIL1178 Thermal Diode Connectors FUNC_TEST TRUE TRUE TRUE TRUE Other Func Test Points TRUE TRUE FUNC_TEST
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SIL1178 C9013 NEC C3568 15B1 zener diode C6090 c5885 Y9345 ZT0200 ZT0201 ZT0202 ZT0203 ZT0210

ATI-RS480M

Abstract: u114d 57 78 24 44 82 24 44 82 7 8 44 46 49 53 57 78 24 44 82 24 44 82 Thermal Diode Connectors
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ATI-RS480M u114d ATI-SB400 74LVC1G66DBV EZ422 SiI 1162 CV137 4C501 200-PIN TSP2220A RS480M M26/M24

smd transistor 6c5

Abstract: lm3240 USB_CAMERA_N USB_CAMERA_P =PP5V_S3_WWAN 8 44 24 44 83 24 44 83 8 Thermal Diode Connectors FUNC_TEST
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smd transistor 6c5 lm3240 RSQ035P03 2SC4691 PIC16F676 inverter hex code aktive elektronische bauelemente ddr AT-DEC71 LN11CP23 P393-ND LN11WP24 P395-ND LN11WP34

transistor SMD s72

Abstract: nec mys 501 designed. A. B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. DIODE; signal, low power DIODE; variable capacitance TRANSISTOR; low power, audio frequency (Rth j-mb ^ ^ K/W) TRANSISTOR; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR; low power, high frequency (Rth j-mb > 15 K/W) M ULTIPLE OF DISSIM ILAR DEVICES - MISCELLANEOUS; e.g. oscillator DIODE; magnetic , ; e.g. high sensitivity phototransistor R A D IA T IO N GENERATOR; e.g. light-emitting diode (LED
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transistor SMD s72 nec mys 501 MYS 99 st MYS 99 102 kvp 81A kvp 81A DIODE BC818W MUN5131T1 BC846A SMBT3904 MVN5131T1 DO215

PXA30x PXA31x PXA32x Processor

Abstract: PXA3xx Processor Family Manual . 142, 143 INTERNATIONAL RECTIFIER Diode Bridges , . 123 SPC TECHNOLOGY Kits: Diode, LED, and R e ctifier , DEVICES INTEGRATED CIRCUITS Diode. Improved format. Over 50,700 diodes from 153 manufacturers
MARVELL
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PXA30x PXA31x PXA32x Processor PXA3xx Processor Family Manual MV-S301368-00

EPSON C691 MAIN

Abstract: YUHINA accurate substitution when used with the diode D.A.T.A. Book. 81F3803.43.00
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EPSON C691 MAIN YUHINA G1202 MAX1999EEI T G791SFX ATI M26P 100/133M MAX1909ETI TPS2224AP HY5DS573222F 128MB 256MB