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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

smd transistor l6

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2N2222 SMD

Abstract: capacitor 2200 uF BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor +Vbias VDD L6 C7 C8 C9 C10 , BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 - 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , Semiconductors UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6
NXP Semiconductors
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ACPR400 ACPR600 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor

capacitor 2200 uF

Abstract: transistor 2N2222 SMD BLF4G10-160 UHF power LDMOS transistor Rev. 01 - 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and CDMA base , June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6 , 22 June 2007 3 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor
NXP Semiconductors
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ACPR750 ACPR1980 R10 smd ELECTROLYTIC capacitor 2200 uF 1812-X7R 2N2222 78L08 IS-95

SMD TRANSISTOR L6

Abstract: philips Trimmer 60 pf Semiconductors Product specification UHF power transistor BLT80 FEATURES · SMD encapsulation · Gold , transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , 02 2 Philips Semiconductors Product specification UHF power transistor BLT80 , characteristics" 1. Ts is the temperature at the soldering point of the collector pin. 2. Transistor mounted on
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philips Trimmer 60 pf KM10 transistor SMD l4 Transistor 131 Transistor TRANSISTOR SMD 3b c4 smd transistor zi MSA035

SMD DIODE gp 817

Abstract: smd resistor philips 1206 DESCRIPTION Semiconductors D1 BZX84, C6V2 SMD Zener Diode T1 MJD31C SMD NPN Transistor T2 BC846C SMC NPN Transistor R1 1.1 k SMD resistor Philips 1206 R2 4.3 k SMD , . The amplifier is equipped with the Philips BLV2044, a NPN silicon planar transistor in a 2-lead SOT437 , profile. When operated from a 26 V supply in class-AB mode the transistor has a minimum power gain of 8 , of the transistor are designed for an optimum gain flatness and efficiency over the PCS band. Bypass
Philips Semiconductors
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SMD DIODE gp 817 smd resistor philips 1206 smd capacitor philips transistor SMD DK SMD Transistor 6f philips smd 1206 resistor AN98022 SCA57

smd-transistor DATA BOOK

Abstract: SMD Transistor application note contains information on a 4 W class-AB amplifier based on the SMD transistor BLV2042. The , 1990 MHz. The next sections contain information on the transistor, the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV2042 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AlN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION 4 AMPLIFIER PERFORMANCE 5
Philips Semiconductors
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AN98018 smd-transistor DATA BOOK SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog Philips 2222-581 smd-transistor -1.am

AN98017

Abstract: AL SMD transistor INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The amplifier described can be used for driver stages in cellular radio base stations in the GSM band 935 - 960 MHz. The next chapters contain information on the transistor, the amplifier construction and the typical RF performance obtained. TRANSISTOR BACKGROUND The BLV904 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN
Philips Semiconductors
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AN98019 AN98017 AL SMD transistor transistor 935 SMD l14 254 AN98026

MGH80

Abstract: AN98017 application note contains information on a 9 W class-AB amplifier based on the SMD transistor BLV909. The , . The next sections contain information on the transistor, the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV909 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE 5
Philips Semiconductors
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AN98020 MGH80

rogers 5880

Abstract: UT70-25 UHF power LDMOS transistor ok, full pagewidth 2001 Nov 27 + VD L6 C8 Product , DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product , UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A · High power gain PIN , DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with , Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 THERMAL
Philips Semiconductors
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rogers 5880 UT70-25 1008CS-102XKBC transistor 2164 transistor 2001 H1 rf transistor smd pages MBK777 SCA73

TEKELEC

Abstract: transistor 2001 H1 DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic , transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to , specification UHF power LDMOS transistor BLF647 APPLICATION INFORMATION RF performance in a common
Philips Semiconductors
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TEKELEC 1800 ldmos sot540a S-16485 CH-8027

smd transistor A6

Abstract: transistor SMD A6 Semiconductors UHF power LDMOS transistor handbook, full pagewidth 2001 Nov 27 + VD L6 C8 , DISCRETE SEMICONDUCTORS DAT M3D392 BLF647 UHF power LDMOS transistor Product , UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES â'¢ High power gain PIN , Top view DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a , LDMOS transistor BLF647 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb
Philips Semiconductors
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smd transistor A6 transistor SMD A6

transistor 2001 H1

Abstract: 22 pf TEKELEC DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic , transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to , specification UHF power LDMOS transistor BLF647 APPLICATION INFORMATION RF performance in a common
Philips Semiconductors
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22 pf TEKELEC

philips 2322 734

Abstract: bvc62 DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES · Double internal , DESCRIPTION e NPN silicon planar transistor with two sections in push-pull configuration. The device is , specification UHF linear push-pull power transistor BLV859 LIMITING VALUES In accordance with the , Product specification UHF linear push-pull power transistor BLV859 CHARACTERISTICS Values apply
Philips Semiconductors
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philips 2322 734 bvc62 philips SMD resistor 805 transistor bd139 philips resistor 2322-734 2322 722 MAM031 SCA51

transistor bd139

Abstract: bvc62 DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 , planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B , power transistor BLV859 LIMITING VALUES In accordance with the Absolute Maximum Rating System , linear push-pull power transistor BLV859 CHARACTERISTICS Values apply to either transistor section
Philips Semiconductors
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DK230 smd for bd139 philips power transistor bd139 smd L17 npn PB SmD TRANSISTOR bd139 smd

smd transistor 805 239

Abstract: SMD transistor L17 P1 SMD resistor potentiometer 3.3 2 k 805 2322 734 23308 T1 T2 NPN transistor , DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B · Internal input , e NPN silicon planar transistor with two sections in push-pull configuration. The device is , Product specification UHF linear push-pull power transistor BLV857 LIMITING VALUES In accordance
Philips Semiconductors
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smd transistor 805 239 SMD transistor L17 STR 457 transistor 5- pin smd IC 358 philips resistor 2322 smd transistor bcv62 MAM217 SCA53

358 SMD transistor

Abstract: transistor FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. APPLICATIONS · , DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1
Philips Semiconductors
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358 SMD transistor SCDS48 771-BLT80-T/R
Abstract: transistor BLT80 FEATURES â'¢ SMD encapsulation â'¢ Gold metallization ensures excellent reliability , DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , Semiconductors Product specification UHF power transistor BLT80 LIMITING VALUES In accordance with Philips Semiconductors
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4894

Abstract: 4312 020 36640 transistor BLT80 FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. 4 , DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , transistor BLT80 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17
Philips Semiconductors
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4894 4312 020 36640 KM10 SMD ic catalogue
Abstract: transistor BLT81 FEATURES â'¢ SMD encapsulation â'¢ Gold metallization ensures excellent reliability , DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , . 77 2 Gp (dB) Philips Semiconductors Product specification UHF power transistor Philips Semiconductors
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2222 730

Abstract: BLT81 power transistor BLT81 FEATURES · SMD encapsulation · Gold metallization ensures excellent , DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , 2 Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING
Philips Semiconductors
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2222 730

BLT81

Abstract: Semiconductors Product specification UHF power transistor BLT81 FEATURES · SMD encapsulation · Gold , transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , power transistor BLT81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 °C unless otherwise
Philips Semiconductors
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