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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

smd transistor equivalent table

Catalog Datasheet MFG & Type PDF Document Tags

30RF35

Abstract: VJ1206Y104KXB BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics , VJ1206Y104KXB or equivalent ATC 100B or equivalent Ferroxcube BDS 3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 C1 , . Abbreviations Table 10. Acronym CCDF CDMA CW EVM FCH FFT IBW IS-95 LDMOS LDMOST N-CDMA PAR PUSC RF SMD VSWR WCS , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base
NXP Semiconductors
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30RF35 smd transistor equivalent table ACPR885 ACPR1980 2002/95/EC

BLF6G38S-25

Abstract: transistor equivalent table -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , LDMOS transistor Table 9. L1 R1, R2 R3 List of components (see Figure 10) .continued Description ferrite SMD bead SMD resistor SMD resistor Table 10. f MHz 3400 3450 3500 3550 3600 Value 20 9.1 Remarks Ferroxcube BDS3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 Component Measured test circuit impedances ZS
NXP Semiconductors
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transistor equivalent table

smd transistor 3400

Abstract: J412 - TRANSISTOR SMD Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , Remarks L1 ferrite SMD bead - Ferroxcube BDS3/3/4.6-4S2 or equivalent R1, R2 SMD resistor 20 SMD 1206 R3 SMD resistor 9.1 SMD 1206 Table 10. Measured test circuit , power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description
NXP Semiconductors
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smd transistor 3400 J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35

smd transistor J3

Abstract: smd transistor equivalent table , Schottky, 1 A, 40 V, SOT-23 10 LED, Green, 10 mcd, 2.2 VF at 20 mA, 1206 SMD Transistor, PNP, 2 A , SMD 2 3 Diode, Schottky, 2 A, 20 V, SMB Transistor, PNP, SOT-223 Manufacturer/Part Number , www.analog.com Fax: 781.326.8703 © 2005 Analog Devices, Inc. All rights reserved. ADP2291-EVAL TABLE OF , dissipation on the pass transistor is high, Q1 can be removed and a SOT-223 package installed at Q2. Jumper , ) Figure 4. Top Layer (Top View) Rev. 0 | Page 4 of 8 ADP2291-EVAL PARTS LIST Table 1. Item 1
Analog Devices
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ADP2291 smd transistor J3 Transistor AND DIODE Equivalent list j3 smd transistor schematic diagram of led monitor EB052 3M smd transistor BAT1000 SML-LX1206GC-TR ZXT10P20DE6 FZT549 631-360-2222--U

TRANSISTOR j412

Abstract: BLF6G38S-25 BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Table 10. L1 R1 , SMD resistor Value 20 9.1 Remarks Ferroxcube BDS3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 , Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data
NXP Semiconductors
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TRANSISTOR j412

SIPMOS

Abstract: smd transistor equivalent table the RDS(On) values. Table 1 Comparison of Data Sheet Figures for MOS Transistor SMD Packages At , not be exceeded. Figure 2 shows a section through a SIPMOS transistor cell and the equivalent circuit , ­ bipolar transistor. Figure 2 Section Through SIPMOS Transistor Cell and Equivalent Circuit Diagram , SIPMOS transistors of SMD design react to pulse-shaped loads. As the SOA (safe operating area) diagram , is not exceeded. So for normal operation, a transistor no longer has to be overdesigned in terms of
Siemens
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SIPMOS smd transistors list Small Signal MOSFETs BSP 220 equivalent smd transistors Transistor comparable types

12-0-12 transformer used 24v dc supply

Abstract: smd transistor 6p , SMD, TFP, 150V, 57A,ROHS FUJI ELECTRIC MJD31CG 1 ea Q3 TRANSISTOR, NPN, 3P , power supply. It can be used in various single transistor topologies including forward and flyback , drain source of the transistor. As the main switch is turned off, a resonance is developed between the magnetizing/leakage inductance and the equivalent resonant capacitor. The high voltage across the drain of , the drain of the transistor is clamped to VIN. VIN*NS/NP V DS V RES VOUT = VIN*D*NS/NP TX
Intersil
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ISL6721EVAL3Z 12-0-12 transformer used 24v dc supply smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W sot-23 ISL6740 ISL67401 ISL6742 ISL6743 ISL6745

transistor K 1352

Abstract: C5750X7R1H106M Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , 100B or equivalent L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent R1 , Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Table 10. Measured test circuit , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data
NXP Semiconductors
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transistor K 1352 TRANSISTOR K 135 722 smd transistor

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: TRANSISTOR SMD MARKING CODE LF B E Table 4 GaAs MMICs in SMD packages Type Package Description CGY 50 CGY 52 CGY , ratio of base (R1) to base-emitter resistance (R2), so that the equivalent digital transistor is , -323 SMD package, for example, has been designed "upside down" in comparison with the conventional SOT , SOT-323, SOT-343 and SOT-363 series listed in Table 1 can be operated with a total power dissipation , - Table 1 Spectrum of discrete semiconductors available in SOT-23 package and in miniature packages SOT
Siemens
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MOSFET TRANSISTOR SMD MARKING CODE nh TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31

smd transistor h2a

Abstract: H2A SMD transistor 10K ohm Yageo America: RC0603JR-0710KL or equivalent RES 10K OHM 1/10W 5% 0603 SMD R7 1 20.0K ohm Yageo America: RC0603JR-0720KL or equivalent RES 20K OHM 1/10W 5% 0603 SMD R9 1 330 ohm Yageo America: RC0603JR-07330RL or equivalent RES 330 OHM 1/10W 5% 0603 SMD R20 1 1.5K ohm Yageo America: RC0603JR-071K5L or equivalent RES 1.5K OHM 1/10W 5% 0603 SMD , SMD 1 9 150K ohm Yageo America: RC0603JR-07150KL or equivalent NXP: PESD5VDS1BA or
Microchip Technology
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smd transistor h2a H2A SMD transistor SMD Transistor Y8 transistor smd H2A H2A transistor SMD HSA2-040SAA/A2320ATR VER20 RS-232 RC0603JR-075K6L LTST-C190GKT 1N4148WX-TP 300MA

smd transistor 6g

Abstract: 6G smd transistor radar power transistor 2. Pinning information Table 2. Pinning Pin Description 1 , Semiconductors LDMOS S-Band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 , BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor Table 8. Typical impedance , radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description , BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 - 19 February 2009 Product data
NXP Semiconductors
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smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 radar circuit component J656

C5750X7R1H106M

Abstract: smd transistor equivalent table transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol , R3 SMD resistor 9.1 [1] TDK C4532X7R1H475M or equivalent Ferroxcube BDS 3/3/8.9-4S2 or , BLF6G20LS-140 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9 , BLF6G20LS-140 Power LDMOS transistor Rev. 01 - 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at
NXP Semiconductors
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Abstract: -150 NXP Semiconductors LDMOS S-band radar power transistor 2. Pinning information Table 2 , radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.9 2.2 â' j7.4 4.2 , BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 â'" 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar NXP Semiconductors
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BLS7G2933S-150

Abstract: radar amplifier s-band transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate , S-band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , BLS7G2933S-150 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance , 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Abbreviations Acronym , BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 - 23 February 2011 Product data
NXP Semiconductors
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radar amplifier s-band SOT922-1

BLS7G2933S-150

Abstract: a 3150 data sheet transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate , S-band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , BLS7G2933S-150 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance , .20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Abbreviations , Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD
NXP Semiconductors
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a 3150 data sheet

FAN7554 equivalent

Abstract: NPX104M275VX2M NIC Components or Equivalent NACK470M50V6.3X8TR 47µF, 50V, SMD C5 NIC Components or , controlling the current. In this evaluation board a method utilizing sense resistors and an NPN transistor is , . Table 1 describes the jumper status for particular output currents. © 2007 Fairchild Semiconductor Page 4 of 17 Rev 1.1 April 2007 www.fairchildsemi.com Table 1: Jumper JP1/JP2 Status and LED , voltage of the NPN Q2, typically about 650mV, the transistor will conduct collector current. This current
Fairchild Semiconductor
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FAN7554 FAN7554 equivalent NPX104M275VX2M FDQ2N80 EFD20 no y-cap CTX0117 FEB157-001
Abstract: -130 NXP Semiconductors LDMOS S-band radar power transistor 6. Characteristics Table 6 , power transistor Table 8. Typical impedance f ZS ZL GHz 2.9 2.2 - j7 , March 2010 ATC 700A or equivalent SMD 0603 © NXP B.V. 2010. All rights reserved. 7 of 12 , transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally , BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 - 3 March 2010 Product data sheet NXP Semiconductors
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transistor d 1302

Abstract: smd transistor 927 transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol , -130 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS , or equivalent SMD 0603 © NXP B.V. 2009. All rights reserved. Rev. 02 - 18 June 2009 7 of , Semiconductors LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym , Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD Surface
NXP Semiconductors
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transistor d 1302 smd transistor 927 sot922 Duroid 6006
Abstract: Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS ZL GHz , Semiconductors LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym , Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD Surface , BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 â'" 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar NXP Semiconductors
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smd transistor equivalent table

Abstract: amplifier TRANSISTOR 12 GHZ -130 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS , ATC 700A or equivalent SMD 0603 © NXP B.V. 2008. All rights reserved. Rev. 01 - 11 December , Semiconductors LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym , Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD Surface , BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 - 11 December 2008 Objective data
NXP Semiconductors
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amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58
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