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smd transistor 3400

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Semiconductors Power LDMOS transistor 7.5 Graphical data 7.5.1 CW VDS = 28 V; IDq = 3400 mA. VDS = , Semiconductors Power LDMOS transistor 7.5.2 Pulsed CW VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = , Power LDMOS transistor 7.5.3 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1 , BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 â'" 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved NXP Semiconductors
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2002/95/EC LS-400PGV
Abstract: Semiconductors Power LDMOS transistor 7.5 Graphical data 7.5.1 CW VDS = 28 V; IDq = 3400 mA. VDS = , Semiconductors Power LDMOS transistor 7.5.2 Pulsed CW VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = , Power LDMOS transistor 7.5.3 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 NXP Semiconductors
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transistor SMD g 28

Abstract: NXP Semiconductors Power LDMOS transistor 7.5.2 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 , NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 , transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz (1) f = 1805 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. (1) f = , BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 â'" 3 June 2014 Product data
NXP Semiconductors
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transistor SMD g 28

BLF6G38S-25

Abstract: transistor equivalent table ferrite SMD bead SMD resistor SMD resistor Table 10. f MHz 3400 3450 3500 3550 3600 Value 20 9.1 Remarks , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc
NXP Semiconductors
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transistor equivalent table ACPR885 ACPR1980

TRANSISTOR j412

Abstract: BLF6G38S-25 BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a
NXP Semiconductors
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TRANSISTOR j412 J412 - TRANSISTOR SMD

smd transistor 3400

Abstract: J412 - TRANSISTOR SMD BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , ) (dBc) 3400 to 3600 28 4.5 15 24 -45[2] -61[2] [1] Single carrier IS-95 with , MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA
NXP Semiconductors
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smd transistor 3400 smd transistor equivalent table C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35

C5750X7R1H106M

Abstract: 30RF35 BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF , ) PL(p) Gp D (MHz) 1-carrier N-CDMA[1] (V) (W) (W) (dB) (%) 3400 to 3600 28 , % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and
NXP Semiconductors
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30RF35 6G38LS-100

transistor BV-1 501

Abstract: smd 501 transistor BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , (M)[1] Gp (MHz) Mode of operation (V) (W) (W) (dB) (%) (dBc) (dBc) 3400 to , frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of
NXP Semiconductors
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transistor BV-1 501 smd 501 transistor VJ1206Y104KXB
Abstract: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 â'" 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF , ) PL(M) [1] Gp (MHz) Mode of operation (V) 3400 to 3600 28 D (W) (W) (dB) (% , is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq NXP Semiconductors
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Abstract: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 - 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at , [3] (dB) (%) 3400 to 3600 28 21.5 47.5[3] PL(M) stands for peak output power. Single , probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a NXP Semiconductors
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Abstract: Semiconductor Transistor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface , BLF8G38LS-75V Power LDMOS transistor Rev. 3 â'" 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF , ) (mA) (V) (W) 1-carrier W-CDMA 3400 to 3800 600 30 20 [1] IDq VDS PL NXP Semiconductors
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TRANSISTOR J601

Abstract: gp816 BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 - 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase , ) (MHz) 1-carrier N-CDMA[1] f (V) 3400 to 3600 28 [1] Single carrier N-CDMA with pilot , Substances (RoHS) BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3
NXP Semiconductors
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TRANSISTOR J601 gp816 J2396 J249
Abstract: BLF8G38LS-75V Power LDMOS transistor Rev. 2 â'" 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance , signal f (MHz) (mA) (V) (W) 1-carrier W-CDMA 3400 to 3800 600 30 20 [1 , video bandwidth Designed for broadband operation (3400 MHz to 3800 MHz) Lower output capacitance for NXP Semiconductors
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30RF35

Abstract: BLF6G38-50 BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 - 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , ) ACPR885k (dBc) ACPR1980k (dBc) Mode of operation f (MHz) 1-carrier N-CDMA[2] 3400 to 3600 28 9 , 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a
NXP Semiconductors
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Abstract: LDMOS transistor 7.3 Graphical data 7.3.1 Pulsed CW VDS = 30 V; IDq = 600 mA. (1) f = 3400 MHz , LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average Ratio SMD , BLF8G38LS-75V Power LDMOS transistor Rev. 1 â'" 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance NXP Semiconductors
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Abstract: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 â'" 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , (%) ACPR885k (dBc) ACPR1980k (dBc) Mode of operation f (MHz) 1-carrier N-CDMA[2] 3400 to 3600 , frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of NXP Semiconductors
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ntc 10K B 3950

Abstract: ntc 100K B 3950 NTC CHIP THERMISTOR The content of this specification may change without notification 10/25/07 Custom solutions are available. FEATURES HOW TO ORDER NTC 05- 103- J 3950 SMD type NTC , 10.0K ohm Size 05 = 0402 Temperature compensation for transistor, IC Crystal Oscillator of mobile , -104 4000M 100 K B value (K) 3100 3100 3400 3400 3400 3435 3435 3435 3435 3950 3950 3950 , K NTC16-224 4000M 220 K B value (K) 3100 3100 3400 3400 3400 3435 3435 3435 3435
American Accurate Components
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3435M ntc 10K B 3950 ntc 100K B 3950 100k rt 3950 NTC 503 3950 NTC 103 3950 NTC thermistor 10k ohm b 3950 NTC05-102 3100M NTC05-152 NTC05-202 3400M NTC05-222

smd 8550 transistor

Abstract: smd transistor 3400 output Schottky transistor. Forward DC Current (mA) 40 40 40 50 Reverse DC DC Current , /4 5/4 5/4 5/4 2/3 2/3 2/3 2/3 0.3/0.3 0.4/0.3 7/2 10/5 45/45 SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP DIP DIP , -ND .47 34.00 78.63 365-1437-ND .47 34.00 78.63 365-1417-1-ND .78 50.40 108.00 365-1417-2
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OPI1264 OPIA405CTU OPIA401BTU OPIA412DTU OPIA410ATR OPIA410ATU smd 8550 transistor 365-1447 8550 smd transistor OPIA400ATR nd250 OPI155 365-1031-ND 365-1032-ND 365-1033-ND 365-1034-ND

smd led 7020

Abstract: RZ4855HDPO Switching cDirect Copper Bonding and SMD Technology cZero Switching for Resistive/Motor Loads cNo Internal , RM1A23D25 42-265 25 A 30.00 28.50 27.00 251-2010 251-0091 RM1A23D50 42-265 50 A 34.00 32.30 30.60 , RS1A48D40 42-530 40 A 34.00 32.30 30.60 20-265 VAC/DC Control DC Switching Relay 251-1057 RZ4825HAPO 12-530 V 25 A 185.00 175.75 166.50 251-1059 RZ4855HAPO 12-530 V 55 A 207.00 196.65 186.30 Transistor
Allied Electronics Catalog
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4825-AA12 smd led 7020 RZ4855HDPO RZ4825HDPO Triac 4050 4850AA12 RHS45A RHS45B RHS90 RHS112 RHS100 2425-AA06

BLS6G2735L-30

Abstract: ROGERS DUROID BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 - 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar , -30; BLS6G2735LS-30 S-band LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , 2 of 17 NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5 , BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 7. Application information 7.1 Circuit information
NXP Semiconductors
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ROGERS DUROID 6G2735LS-30
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