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smd transistor 1589

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008 PD55008's superior , , designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 1.586 - j2.087 3.082 + j2.043 500 1.589 - j1.185 1.561 - j2.639 500 1.409 - j3 ... STMicroelectronics
Original
datasheet

10 pages,
116.71 Kb

XPD55008S 480M 6 pin TRANSISTOR SMD Z8 PD55008S smd transistor 1589 SMD Transistor z6 XPD55008 transistor SMD Z2 pd55008 552 smd transistor J2087 transistor smd z3 PD55008 PD55008 PD55008S TEXT
datasheet frame
Abstract: source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high , LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008 PD55008's , package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It , 1.965 1.716 + j 1.552 520 1.586 - j 2.087 3.082 + j 2.043 500 1.589 - j 1.185 1.561 ... STMicroelectronics
Original
datasheet

11 pages,
252.41 Kb

transistor SMD 520 smd code ND e3 PD55008S PD55008 smd transistor code A4 TEXT
datasheet frame
Abstract: source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008 PD55008's superior , , designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 2.916 480 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 ... STMicroelectronics
Original
datasheet

18 pages,
332.04 Kb

smd z5 transistor PD55008S PD55008 AN1294 TEXT
datasheet frame
Abstract: , enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial , the first true SMD plastic RF power package, PowerSO-10RF. PD55008 PD55008's superior linearity performance , high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially , 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j ... STMicroelectronics
Original
datasheet

18 pages,
331.89 Kb

PD55008S PD55008 AN1294 11 0741 TEXT
datasheet frame
Abstract: CGH40006P CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P CGH40006P, operating from a 28 volt rail, offers a general purpose , circuits. The transistor is available in a solder-down, pill package. Package Type s: 440109 PN's: CGH40 CGH40 , +/-10%, CER, 100V, X7R, 1210 CAP, 33 uF, 100V, ELECT, FK, SMD CONN, SMA, STR, PANEL, JACK, RECP , -15.34 -16.02 -16.62 -17.13 -17.89 -18.30 -18.38 -18.13 -17.60 -16.82 -15.89 -14.87 -13.89 -13.04 -12.42 ... Cree
Original
datasheet

13 pages,
2204.79 Kb

RO5880 CGH40006P-TB CGH4000 1878 TRANSISTOR CGH40006P CGH40 TEXT
datasheet frame
Abstract: CGH40006P CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PN’s: CGH40 CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 ... Cree
Original
datasheet

13 pages,
1485.09 Kb

CGH40006P TEXT
datasheet frame
Abstract: N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008 PD55008's superior linearity , high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially , SC15200 SC15200 SC13140 SC13140 IMPEDANCE DATA PD55008 PD55008 FREQ. MHz 480 500 520 800 850 900 ZIN () 1.141 - j 2.054 1.589 ... STMicroelectronics
Original
datasheet

18 pages,
331.88 Kb

PD55008 PD55008S TEXT
datasheet frame
Abstract: CGH40006P CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PN’s: CGH40 CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 ... Cree
Original
datasheet

13 pages,
1484.87 Kb

CGH40006P TEXT
datasheet frame
Abstract: CGH40006P CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PN’s: CGH40 CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 ... Cree
Original
datasheet

13 pages,
1486.13 Kb

CGH40006P TEXT
datasheet frame
Abstract: CGH40006P CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in Package Type s: 440109 PN's: CGH40 CGH40 006P , , 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 , 132.15 2.94 -0.20 0.025 -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 ... Cree
Original
datasheet

13 pages,
1542.98 Kb

JESD22 Cree Microwave 1878 TRANSISTOR 006P CGH40006P-TB J427 RO5880 cgh40006p CGH40006P TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
PD55008 PD55008 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor , linearity and reliability of ST's latest LDMOS tech- nology mounted in the first true SMD plastic RF power JEDEC approved, high power SMD package. It has been specially optmized for RF needs and offers 1.965 1.716 + j 1.552 500 1.589 - j 1.185 1.561 + j 2.639 480 1.141 - j 2.054 1.649 + j 2.916 3/11
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7164-v1.htm
STMicroelectronics 19/01/2001 12.75 Kb HTM 7164-v1.htm
N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008 PD55008's su- perior , designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been ANGLES 20:1 VSWR PD55008 PD55008 Frequency MHz Zin W Zdl W 520 1.649 - j1.965 1.716 - j1.552 500 1.589 - j1.185
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7164.htm
STMicroelectronics 20/10/2000 12.13 Kb HTM 7164.htm
) BLT82 BLT82: UHF power transistor (5-2-96 ) BLT92/SL BLT92/SL: UHF power transistor (1-5-89 ) BUK107-50GL BUK107-50GL: PowerMOS transistor Logic level TOPFET (1-4-98 ) BUK111-50GL BUK111-50GL: Logic level TOPFET SMD SMD version of BUK202-50X BUK202-50X (1-7-96 ) BUK436W-1000B BUK436W-1000B: PowerMOS transistor (1-3-98 ) 1N5225B 1N5225B to 1N5267B 1N5267B: Voltage regulator diodes (26-4-96 ) 2N1613 2N1613: NPN medium power transistor (11-4-97 ) 2N1711 2N1711: NPN medium power transistor (28-5-97 ) 2N1893 2N1893: NPN medium power
/datasheets/files/philips/discontinued/prunedlist-v1.html
Philips 14/02/2002 372.71 Kb HTML prunedlist-v1.html
No abstract text available
/datasheets/files/philips/catalog_test_6-6.html
Philips 17/06/2005 3887.26 Kb HTML catalog_test_6-6.html
1 1 0 /catalog/appnotes/15106.html Applicationnotes for Bipolar power transistors Title Date AN98079 AN98079 1.pdf: GTV4000 GTV4000 2Fh TV receiver with TDA9321H TDA9321H and TDA933xH 1998-08-19 AN10280 AN10280 1.pdf: 17 inch 70 kHz CRT monitor 2 1 0 /catalog/appnotes/15107.html Applicationnotes for Lighting Title Date an buJ100.pdf: Philips BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 transistor diode / transistor mod Title Date AN10117 AN10117 1.pdf: Medium Power Transistors and Rectifiers for Power
/datasheets/files/philips/search/docindex-v1.txt
Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt
Applicationnotes for Lighting Title Date AN BUJ100 BUJ100: Philips BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp 3 1 0 /catalog/appnotes/15230.html Applicationnotes VARACTOR 141 1 0 /catalog/appnotes/30924.html Applicationnotes for Transistor wideband NPN up to 10 GHz 1890MHZ 1890MHZ: 1890MHz low power down 142 1 0 /catalog/appnotes/30925.html Applicationnotes for Transistor
/datasheets/files/philips/search/docindex.txt
Philips 25/04/2003 954.24 Kb TXT docindex.txt
BCV65 BCV65 NPN/PNP General Purpose Transistor .SUBCKT BCV65 BCV65 1 2 3 4 Q1 1 2 4 BC847B BC847B Q2 3 2 4 134 1 0 /models
/datasheets/files/philips/search/docindex-v2.txt
Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt
(pulgadas) ~ Size(inch) 11129 ~ Dimension(mm) ~ Size(mm) 11130 ~ Padstack SMD ~ SMD Padstack 11131
/datasheets/files/kaleidoscope/cad/visionics_edwinxp140/country/spanish/e2klocal.txt
Kaleidoscope 03/06/2005 548.04 Kb TXT e2klocal.txt
No abstract text available
/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip ()
NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip
~ サイズ(インチ)~ Size(inch) 11129 ~ サイズ(ミリ)~ Size(mm) 11130 ~ SMD パッド~ SMD Padstack 11131 ~ 四'~ Square
/datasheets/files/kaleidoscope/cad/visionics_edwinxp140/country/japanese/e2klocal.txt
Kaleidoscope 29/04/2003 507.34 Kb TXT e2klocal.txt