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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

smd transistor 1589

Catalog Datasheet MFG & Type PDF Document Tags

transistor smd z3

Abstract: J2087 source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior , , designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 1.586 - j2.087 3.082 + j2.043 500 1.589 - j1.185 1.561 - j2.639 500 1.409 - j3
STMicroelectronics
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PD55008S XPD55008 XPD55008S transistor smd z3 J2087 transistor SMD Z2 552 smd transistor 480M SO-10RF SO-10

smd transistor code A4

Abstract: smd code ND e3 source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high , LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's , package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It , 1.965 1.716 + j 1.552 520 1.586 - j 2.087 3.082 + j 2.043 500 1.589 - j 1.185 1.561
STMicroelectronics
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smd transistor code A4 smd code ND e3 transistor SMD 520 L911

smd z5 transistor

Abstract: AN1294 source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior , , designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 2.916 480 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500
STMicroelectronics
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AN1294 smd z5 transistor

11 0741

Abstract: AN1294 , enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial , the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior linearity performance , high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially , 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j
STMicroelectronics
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11 0741

CGH40006P

Abstract: 1878 TRANSISTOR CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose , circuits. The transistor is available in a solder-down, pill package. Package Type s: 440109 PN's: CGH40 , +/-10%, CER, 100V, X7R, 1210 CAP, 33 uF, 100V, ELECT, FK, SMD CONN, SMA, STR, PANEL, JACK, RECP , -15.34 -16.02 -16.62 -17.13 -17.89 -18.30 -18.38 -18.13 -17.60 -16.82 -15.89 -14.87 -13.89 -13.04 -12.42
Cree
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1878 TRANSISTOR RO5880 CGH40006P-TB CGH4000
Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 Cree
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Abstract: N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior linearity , high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially , SC15200 SC13140 IMPEDANCE DATA PD55008 FREQ. MHz 480 500 520 800 850 900 ZIN () 1.141 - j 2.054 1.589 STMicroelectronics
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Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 Cree
Original
Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 Cree
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cgh40006p

Abstract: RO5880 CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in Package Type s: 440109 PN's: CGH40 006P , , 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 , 132.15 2.94 -0.20 0.025 -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85
Cree
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J427 006P JESD22 Cree Microwave

CGH40006P-TB

Abstract: RO5880 CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PN's: CGH40 006P , , 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 , 132.15 2.94 -0.20 0.025 -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85
Cree
Original
CGH40006
Abstract: 5#17;#28; SCI R counter 1589 N counter TH71221 block diagram User Mode Features The , transistor 2.6µA 36p RO 36p 10 39k VEE 11 FSK_SW VCC analog I/O FSK_SW 11 , . Since the open-collector output transistor can be considered as a current source, the only parameters Melexis
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930MH AAA-000 BAA-000 TH71221ELQ-AAA-000-RE ISO14001

transistor Bs 998

Abstract: AN1294 , enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial , the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior linearity performance , reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF , 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j
STMicroelectronics
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transistor Bs 998

AN1294

Abstract: PD55008 PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode , transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at , and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power , package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It , j 2.054 1.649 + j 2.916 480 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185
STMicroelectronics
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PD55008TR-E PD55008STR-E 500MH

PD55008

Abstract: AN1294 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode , transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at , , linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power , to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j
STMicroelectronics
Original
J-STD-020B PD54003S-E
Abstract: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode , transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at , , linearity and reliability of STâ'™s latest LDMOS technology mounted in the first true SMD plastic RF power , to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 1.141 - j 2.054 1.649 + j 2.916 480 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j STMicroelectronics
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74 hc 59581

Abstract: b768 transistor . . . . . . . . Thermoelectric Modules . . . . . . . . . . . . . . . . . . . . Transistor/Diode , 15.89 145.53 10.61 17.72 25+ 6.34 8.04 6.31 8.67 7.04 10.48 8.41 12.51 114.56 9.87 13.66 100+ 5.59 ­ ­ , , tin plated SMD version has phosphor-bronze contacts, tin-lead plating Polyphenylene sulphide body, UL
Element14 Catalog
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74 hc 59581 b768 transistor transistor smd 661 752 652B0082215-002 8 pin ic base socket round pin type lead MM5231 RC6-8-01LS RC12-2 5-01LS RC12-4-01LS RC12-6-01LS

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table application and design requirements. transistors A transistor is an active semiconductor device, which
Maplin Catalog
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induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch siemens mkl capacitor db 3202 diac

TRANSISTOR SMD K23

Abstract: EL 817 c321 UAA1570HL The VCO consists of a single transistor in common collector configuration with internal , with the external resonator/inductor, this is a typical Colpitts circuit. With the transistor's base , this pin. At VCCA = 3 V and Tamb = 27 °C the oscillator transistor is initially biased with
Philips Semiconductors
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TRANSISTOR SMD K23 EL 817 c321 C345 plastic transistor varactor diode V101 SMD transistor k23 Solid Tantalum Surface Mount Capacitors C106 mark

TRANSISTOR SMD K23

Abstract: C345 plastic transistor consists of a single transistor in common collector configuration with internal positive feedback , resonator/inductor, this is a typical Colpitts circuit. With the transistor's base connected to pin 10 , 27 °C the oscillator transistor is initially biased with approximately 1.5 mA of start-up current
Philips Semiconductors
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TP218 transistor C219-33 DIODE SMD v105 varactor V104 MHB320 transistor c324
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