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Part Manufacturer Description PDF & SAMPLES
1589815-6 TE Connectivity Ltd STM037T2HN = SMT CONN
1589050-6 TE Connectivity Ltd PTM025SC2DC060N = PANEL MNT
1589809-3 TE Connectivity Ltd STL015W6SN = THRU-HOLE
1589461-7 TE Connectivity Ltd HEADER CONNECTOR,PCB MNT,PLUG,9 CONTACTS,SKT,0.025 PITCH,PC TAIL TERMINAL,LOCKING
1589072-1 TE Connectivity Ltd RECTANGULAR CONNECTOR, RECEPTACLE
1589688-7 TE Connectivity Ltd TCM019PC2DC120B = Circular

smd transistor 1589

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior , , designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 1.586 - j2.087 3.082 + j2.043 500 1.589 - j1.185 1.561 - j2.639 500 1.409 - j3 STMicroelectronics
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PD55008S XPD55008 XPD55008S transistor smd z3 J2087 552 smd transistor transistor SMD Z2 2000r1 SO-10RF SO-10
Abstract: source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high , LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's , package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It , 1.965 1.716 + j 1.552 520 1.586 - j 2.087 3.082 + j 2.043 500 1.589 - j 1.185 1.561 STMicroelectronics
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smd transistor code A4 L911 smd code ND e3 transistor SMD 520
Abstract: source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior , , designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 2.916 480 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 STMicroelectronics
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AN1294 smd z5 transistor
Abstract: , enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial , the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior linearity performance , high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially , 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j STMicroelectronics
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11 0741
Abstract: CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose , circuits. The transistor is available in a solder-down, pill package. Package Type s: 440109 PN's: CGH40 , +/-10%, CER, 100V, X7R, 1210 CAP, 33 uF, 100V, ELECT, FK, SMD CONN, SMA, STR, PANEL, JACK, RECP , -15.34 -16.02 -16.62 -17.13 -17.89 -18.30 -18.38 -18.13 -17.60 -16.82 -15.89 -14.87 -13.89 -13.04 -12.42 Cree
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1878 TRANSISTOR CGH4000 CGH40006P-TB RO5880
Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 Cree
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Abstract: N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad , technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior linearity , high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially , SC15200 SC13140 IMPEDANCE DATA PD55008 FREQ. MHz 480 500 520 800 850 900 ZIN () 1.141 - j 2.054 1.589 STMicroelectronics
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Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 Cree
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Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P , CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 J1 Q1 CONN, SMA, STR, PANEL, JACK, RECP 2 , -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 Cree
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Abstract: CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in Package Type s: 440109 PN's: CGH40 006P , , 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 , 132.15 2.94 -0.20 0.025 -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 Cree
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J427 006P Cree Microwave JESD22
Abstract: CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in a Package Type s: 440109 PN's: CGH40 006P , , 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 , 132.15 2.94 -0.20 0.025 -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 Cree
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CGH40006
Abstract: 5#17;#28; SCI R counter 1589 N counter TH71221 block diagram User Mode Features The , transistor 2.6ÂuA 36p RO 36p 10 39k VEE 11 FSK_SW VCC analog I/O FSK_SW 11 , . Since the open-collector output transistor can be considered as a current source, the only parameters Melexis
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930MH AAA-000 BAA-000 TH71221ELQ-AAA-000-RE ISO14001
Abstract: , enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial , the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior linearity performance , reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF , 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j STMicroelectronics
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transistor Bs 998
Abstract: PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode , transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at , and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power , package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It , j 2.054 1.649 + j 2.916 480 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 STMicroelectronics
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PD55008TR-E PD55008STR-E 500MH
Abstract: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode , transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at , , linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power , to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j STMicroelectronics
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J-STD-020B PD54003S-E
Abstract: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode , transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at , , linearity and reliability of STâ'™s latest LDMOS technology mounted in the first true SMD plastic RF power , to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been , 1.141 - j 2.054 1.649 + j 2.916 480 1.075 - j 2.727 2.046 + j 1.960 500 1.589 - j STMicroelectronics
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Abstract: . . . . . . . . Thermoelectric Modules . . . . . . . . . . . . . . . . . . . . Transistor/Diode , 15.89 145.53 10.61 17.72 25+ 6.34 8.04 6.31 8.67 7.04 10.48 8.41 12.51 114.56 9.87 13.66 100+ 5.59 ­ ­ , , tin plated SMD version has phosphor-bronze contacts, tin-lead plating Polyphenylene sulphide body, UL Element14 Catalog
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74 hc 59581 b768 transistor transistor smd 661 752 652B0082215-002 MM5231 smd transistor w16 RC6-8-01LS RC12-2 5-01LS RC12-4-01LS RC12-6-01LS
Abstract: application and design requirements. transistors A transistor is an active semiconductor device, which Maplin Catalog
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induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 db 3202 diac siemens mkl capacitor YY63T
Abstract: UAA1570HL The VCO consists of a single transistor in common collector configuration with internal , with the external resonator/inductor, this is a typical Colpitts circuit. With the transistor's base , this pin. At VCCA = 3 V and Tamb = 27 °C the oscillator transistor is initially biased with Philips Semiconductors
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TRANSISTOR SMD K23 EL 817 c321 C345 plastic transistor varactor diode V101 SMD transistor k23 varactor V104
Abstract: consists of a single transistor in common collector configuration with internal positive feedback , resonator/inductor, this is a typical Colpitts circuit. With the transistor's base connected to pin 10 , 27 °C the oscillator transistor is initially biased with approximately 1.5 mA of start-up current Philips Semiconductors
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TP218 transistor DIODE SMD v105 C219-33 MHB320 C318 transistor transistor c324
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