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UDT020A0X3-SRZ GE Critical Power CONV DIGITAL 5.5V 20A POL SMD visit GE Critical Power
APXS003A0X-SRDZ GE Critical Power CONVER DC/DC 0.59 5.5V @ 3A SMD visit GE Critical Power
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

smd diode byg

Catalog Datasheet MFG & Type PDF Document Tags

smd diode byg

Abstract: smd diode byg90 Per diode Vr continuous reverse voltage BYG90-20 - 20 V BYG 90-30 - 30 V BYG90-40 - 40 V Vrrm repetitive peak reverse voltage BYG90-20 - 20 V BYG 90-30 - 30 V BYG90-40 - , time â'¢ Guard ring protected â'¢ Plastic SMD package. APPLICATIONS â'¢ Low power switched-mode power supplies â'¢ Rectifying â'¢ Polarity protection. DESCRIPTION The BYG 90-40 series consists of , plastic SMD packages. cathode identifier _ I too« _ Top view Fig.1 Simplified outline
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BYG90-30 smd diode byg smd diode byg90 SCHOTTKY BARRIER RECTIFIER Diodes MLC388

smd diode byg

Abstract: smd diode byg 20 recovery time â'¢ Guard ring protected â'¢ Plastic SMD package. APPLICATIONS â'¢ Low power switched-mode power supplies â'¢ Rectifying â'¢ Polarity protection. DESCRIPTION The BYG 90-40 series , rectangular SODIO6A plastic SMD packages. cathode identifier Top view Fig.1 Simplified outline (SOD1Q6A , SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Vr continuous reverse voltage BYG90 , 20 V BYG 90-30 - 30 V BYG 90-40 - 40 V Vrwm crest working reverse voltage BYG 90-20 -
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smd diode byg 20 MARKING js smd Scans-003993 byg 100 diode BYG DIODE MARKING marking BYG 010S3T 010S40G D1D5401 D1G54G2

smd diode byg 200

Abstract: smd diode byg BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features · · · · · Glass , diodes Parts Table Part BYG 24 D BYG 24 G BYG 24 J Type differentiation VR = 200 V @ IFAV = 1.5 A VR , reverse voltage Test condition Part BYG 24 D BYG 24 G BYG 24 J Peak forward surge current Average forward , Reverse current Breakdown voltage IF = 1 A IF = 1.5 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 µA BYG 24 D BYG 24 G BYG 24 J Reverse recovery time IF = 0.5 A; IR = 1 A; iR = 0.25 A Test condition Part
Vishay Semiconductors
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smd diode byg 200 smd diode byg 20 j 24 do214ac do214ac package DO-214AC 25K/W 125K/W 150K/W

smd diode byg

Abstract: smd diode byg 200 BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features · · · · · Glass , Parts Table Part Type differentiation Package BYG 24 D VR = 200 V @ IFAV = 1.5 A DO-214AC BYG 24 G VR = 400 V @ IFAV = 1.5 A DO-214AC BYG 24 J VR = 600 V @ IFAV = 1.5 A DO , Value Unit VR = VRRM 200 V BYG 24 G VR = VRRM 400 V BYG 24 J Peak forward surge current Part BYG 24 D VR = VRRM 600 V IFSM 30 A IFAV 1.5 A Tj =
Vishay Semiconductors
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BYg 25 BYG DO-214AC JEDEC DO-214 24 DO-214AC SMA BYG 15811

smd diode byg

Abstract: smd diode byg 200 VISHAY BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features · · · · · Glass , Order Information Part Number BYG 24 D BYG 24 G BYG 24 J Part Differentiation VR = 200 V @ IFAV = 1.5 A , otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition Sub type BYG 24 D BYG 24 G BYG 24 J Peak forward surge current Average forward current Junction and storage , ; IR = 1 A; iR = 0.25 A BYG 24 D BYG 24 G BYG 24 J Sub type Symbol IR IR V(BR)R V(BR)R V(BR)R trr 200
Vishay Semiconductors
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smd diode byg 50 j um17 smd byg 155K/W 175K/W

smd diode byg 200

Abstract: smd diode byg 20 j BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features · · · · · Glass , Parts Table Part BYG 24 D BYG 24 G BYG 24 J Type differentiation VR = 200 V @ IFAV = 1.5 A VR = 400 V @ , Test condition Part BYG 24 D BYG 24 G BYG 24 J Peak forward surge current Average forward current , voltage IF = 1 A IF = 1.5 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 µA BYG 24 D BYG 24 G BYG 24 J , Document Number 86067 Rev. 1.2, 19-Oct-04 BYG24 Vishay Semiconductors 30 C D ­ Diode Capacitance
Vishay Semiconductors
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BYG24D

SOD106A

Abstract: BYG90-40 cathode identifier handbook, 4 columns · Guard ring protected · Plastic SMD package. kk aa , protection. DESCRIPTION Fig.1 Simplified outline (SOD106A), pin configuration and symbol. The BYG , encapsulated in rectangular SOD106A plastic SMD packages. 1996 May 06 2 Philips Semiconductors , . MAX. UNIT Per diode VR continuous reverse voltage BYG90-20 V - 30 V BYG90 , Per diode VF forward voltage see Fig.2; note 1 IF = 1 A diode capacitance mV - -
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SOD106A MLC389 M3D113 MAM129 MSA356

SOD106A

Abstract: diode smd marking AA 25 columns · Guard ring protected · Plastic SMD package. kk aa APPLICATIONS · Low power , Fig.1 Simplified outline (SOD106A), pin configuration and symbol. The BYG 90-40 series consists of , SOD106A plastic SMD packages. 1996 May 06 2 Philips Semiconductors Product specification , Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode , CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage see Fig.2; note 1 IF = 1 A
Philips Semiconductors
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diode smd marking AA 25

SOD106A

Abstract: BYG90-40 cathode identifier handbook, 4 columns · Guard ring protected · Plastic SMD package. kk aa , protection. DESCRIPTION Fig.1 Simplified outline (SOD106A), pin configuration and symbol. The BYG , encapsulated in rectangular SOD106A plastic SMD packages. 1996 May 06 2 Philips Semiconductors , . MAX. UNIT Per diode VR continuous reverse voltage BYG90-20 V - 30 V BYG90 , Per diode VF forward voltage see Fig.2; note 1 IF = 1 A diode capacitance mV - -
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MSA35 marking BYG90

smd diode byg

Abstract: SOD106A diode BYG90-90 FEATURES DESCRIPTION · Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. · High breakdown voltage · Capability of absorbing very high surge current · Fast recovery time cathode identifier handbook, 4 columns · Guard ring protected · Plastic SMD , rectifier diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors
Philips Semiconductors
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smd diode 106a

Abstract: smd 106a The BYG 90-90 is a S chottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular S O D 106A plastic SMD package. · Guard ring protected · P lastic SM D , DISCRETE SEMICONDUCTORS GMTâ SlnlEET BYG90-90 Schottky barrier rectifier diode Product , barrier rectifier diode FEATURES · Low sw itching losses · High breakdow n voltage · C apability of , S em iconductors Product specification Schottky barrier rectifier diode ELECTRICAL
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smd diode 106a smd 106a

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram diode - damper / modulator · GA high-speed switching diodes · GA low leakage current diodes · GA , Radio varicap diodes FM radio tuning · ZenblockTM - zener with integrated blocking diode (one for two , TIME (us) 25 DIODE CAPACITANCE * at VR = 2V 5.4 www.semiconductors.philips.com (pF) 5* 100 kHz DIODE SERIES RESISTANCE (MOhm) 12* 1 MHz DIODE SERIES RESISTANCE (kOhm) 250* PACKAGE SMD SOD106 BAQ806 TYPICAL APPLICATION LEADED SOD81 BAQ800 (Car) Radio R Discrete
Philips Semiconductors
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BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03

BU4508DX equivalent

Abstract: BUT11APX equivalent diode option (indicated by "D" in type number). Full range of isolated and industry standard packages , integrated damper diode All All BU * * * * D * with integrated damper diode MSD517 BUX87 - , ) (isolated TO220AB) SMD TO92 (SOT54) IPAK DPAK D2PAK (SOT533) (SOT428) TYPICAL , damper Diodes - 2 (factsheet) Order code 9397 750 07536 9398 510 64011 9398 510 65011 DUAL DIODE , BYM36G BYW97G BYD47-20 BYD43-20 BYV98 PFC Diode 1/2 1/2 1 1/2 1/2 1 1 110/220 V AC
Philips Semiconductors
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BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note BU2508Dx equivalent FIN-02630 BP317 D-20097 H-1119 254-D BT148-600R

BU4508DX equivalent

Abstract: BUT11APX equivalent RESISTANCE (pF) 5* 1 MHz DIODE SERIES RESISTANCE (M) 12* PACKAGE SMD LEADED SOD106 SOD81 , diode option (indicated by "D" in type number). Full range of isolated and industry standard packages , 0.5 26 - 125 BU * * * * A * no integrated damper diode All All BU * * * * D * with integrated damper diode MSD517 BUX87 - 1100 Monitor MSD518 www.semiconductors.philips.com , ) (isolated TO220AB) SMD TO92 (SOT54) IPAK DPAK D2PAK (SOT533) (SOT428) TYPICAL
Philips Semiconductors
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2SD1876 2Sd1651 equivalent BYS21-45 2SD1878 data sheet smd zener diode color band 2SC5296 equivalent BT148-400R BSH203 BSH201 BT132-600D BT134W-600D BT134W-600E

transistor SMD s72

Abstract: nec mys 501 , , (SMD). , , , . , , . . . , , , , PHILIPS SOD80. SOD15 SGS-Thomson 7043 SMC, (. 2 « (SMD)». SOD80 7343 SMC SOD15 , « (SMD)» 103, 10 , ­ 10 10 . 2R2, 2.2 , 2.2 . 107 0.1 , ), , . 11. (IEC) ­ . , SMD-, 8 . 1:23 182 , :0R6 ­ 80.6 . 12. SOT (SOD) ­ Small Outline Transistor (Diode) - « () ». SOT , , . , .
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transistor SMD s72 nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A BC818W MUN5131T1 BC846A SMBT3904 MVN5131T1 DO215

CHQ 1838

Abstract: CK 77- 94V-0 cam pinout  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
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CHQ 1838 CK 77- 94V-0 cam pinout tda 12011 MYS 99 726 TDA 7786 crouzet 88 810.1 761-M0289-SS 761-M0290-SS 761-M0291-SS M0274-SS M0275-SS