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TLC3545IDRG4 Texas Instruments 14-Bit 200KSPS ADC Serial Out, Auto PWRDN, Pseudo Differential Input 8-SOIC -40 to 85
TLC3545ID Texas Instruments 14-Bit 200KSPS ADC Serial Out, Auto PWRDN, Pseudo Differential Input 8-SOIC -40 to 85
TLC3545IDR Texas Instruments 14-Bit 200KSPS ADC Serial Out, Auto PWRDN, Pseudo Differential Input 8-SOIC -40 to 85
TLC3545IDGKRG4 Texas Instruments IC 1-CH 14-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO8, GREEN, PLASTIC, MSOP-8, Analog to Digital Converter
TLC3545IDGK Texas Instruments 14-Bit 200KSPS ADC Serial Out, Auto PWRDN, Pseudo Differential Input 8-VSSOP -40 to 85
TLC3545IDG4 Texas Instruments 14-Bit 200KSPS ADC Serial Out, Auto PWRDN, Pseudo Differential Input 8-SOIC -40 to 85

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sin 3545 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: (see NOTE) Rating Supply Voltage Oscillator Transistor Base, Emitter Input Voltage Input Voltage for , output Oscillator transistor base pin Oscillator transistor collector pin Oscillator transistor emitter , Dependence 9 MB551 (TEST CIRCUIT - 1, RECOMMENDED PRINTED CIRCUIT BOARD USED) Fig. 9 - C/N, SIN vs , MICROELECTRONICS, INC. Integrated Circuits Division 3545 North First Street San Jose, CA 95134-1804 USA Tel -
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colpitts oscillator construction Fujitsu 10ghz transistor MURATA VCO Series TEL Prober UCN103C D-6000
Abstract: MGF431OD Series L1~o- o~i -oqofDESCRIPTION The MGF431OD series super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits , 97.7 K MSG/MAG (dB) 5.347 5.058 4.769 4.437 4.105 3.825 3.545 3.337 3.129 2.984 2.839 2,722 , .' · MAX. (da) ~ · (GHz). ·Z~ 100 ~ %" Mitsubishi
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MGF43180 MGF1902B-65 MGF1802 mgf431 mitsubishi mgf MGF4314D MGF4316D MGF4317D MGF4318D MGR43
Abstract: OPERATING CONDITIONS Parameter S up ply voltage Reset, reset sin k curre nt V ref o u tp u t curre nt W , examples c and d. a Using NPN transistor Vcc(5V) o -MB3773 1 2 3 4 8 7 6 5 circuit R2=1k ct: R i= 1 M 777 b Using PNP transistor V cc (5V) o-MB3773 1 2 3 4 8 7 6 5 Logic circuit , . Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, USA Tel: (408) 922-9000 Fax: (408 -
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MB3773 DIP-8P-M01 FPT-8P-M01 F9803
Abstract: receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor , , particularly in production technology, the field effect transistor was little known until the early 1960 , transistor. With the development of semiconductor manufacturing technology and the need for lower energy California Eastern Laboratories
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NE800898-7H NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph AN82901-1 NE868898-6 MW77-21 MTT-22 ED-21
Abstract: receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor , , particularly in production technology, the field effect transistor was little known until the early 1960 , transistor. With the development of semiconductor manufacturing technology and the need for lower energy California Eastern Laboratories
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NE800196 NE24406 NE868199 shockley diode NE800495-4 shockley diode application
Abstract: com parator section (PWM Com p.) Threshold voltage Input sin k current Input source current O utput , configuration, and can drive an external PNP transistor. The on current value can be set up to a m axim um of 30 , . co.jp/ North and South America FUJITSU M IC R O ELEC TR O N IC S , INC. S em iconductor Division 3545 N -
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S04-27216-2E MB3817 B3817 FPT-16P-M T-16P F9812
Abstract: of this series w as to configure a device that can be used in as m any voltage sen sin g ap p lica , b3b7B53 01D11S7 flD5 3-545 MC34161 MC33161 Figure 21. Positive and Negative Overvoltage , transistor will eventually pump-up the output capacitor until its voltage exceeds the input threshold of -
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33161p C34161/M C33161
Abstract: Replaced:"URXD" with "SOUT" . Replaced:"URXD" with "SIN". Fig.41 is modified. Replaced:"FFFBH" with , 3-10 Pull-up transistor standard characteristics I IL-V I . 3-11 Pull-down transistor standard characteristics IIL-VI Renesas Technology
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wiring diagrams* bosch biphase P16/PWM P15/CNTR1 P14/CNTR0 P13/TX0 P12/INT1 P11/INT0
Abstract: . Replaced:"PUPDJ" with "PUP4J". Replaced:"URXD" with "SOUT" . Replaced:"URXD" with "SIN". Fig.41 is , ) . 3-10 Pull-up transistor standard characteristics I IL-V I . 3-11 Pull-down transistor standard characteristics IIL-VI Mitsubishi
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M37630M4T-XXXFP M37630M4T package drawing M37630T-RFS M37630E4T-XXXFP P02/AN2 P01/AN1 P00/AN0 P47/KW7
Abstract: Replaced:"URXD" with "SOUT" . Replaced:"URXD" with "SIN". Fig.41 is modified. Replaced:"FFFBH" with Renesas Electronics
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ctbc 337 40 CTBC 337 SERIES MELPS 740 SOFTWARE USERS MANUAL transistor BC 337 005E16 005F16 P07/AN7 P06/AN6 P05/AN5 P04/AN4
Abstract: P33/WRH P34/HRQ P35/HAK P36/RDY P37/CLK P40/SCK P41/SOT P42/SIN P43/SCK1 P44/SOT1 VCC P45 , P32/WRL P33/WRH P34/HRQ P35/HAK P36/RDY P37/CLK P40/SCK P41/SOT P42/SIN P43/SCK1 P44/SOT1 , port is set for input.) F (CMOS/H) 18 SIN P43 21 UART serial data input pin. Since this , CMOS I/O pins, this pin is not provided with any P-channel transistor. Therefore the pin does not , P40/SCK P41/SOT UART Port 8 P42/SIN P43/SCK1 P44/SOT1 Port 7 Extended I/O serial Fujitsu
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DS07-13706-2E F2MC-16LX MB90552B MB90553B 458 TIMER CIRCUIT COLLECTION A18 sot LQFP-100 MB90550A/550B MB90552A/552B/553A/553B/T552A/T553A MB90F553A/P553A
Abstract: P35/HAK P36/RDY P37/CLK P40/SCK P41/SOT P42/SIN P43/SCK1 P44/SOT1 VCC P45/SIN1 P46/ADTG P47 , /WRL P33/WRH P34/HRQ P35/HAK P36/RDY P37/CLK P40/SCK P41/SOT P42/SIN P43/SCK1 P44/SOT1 VCC , port is set for input.) F (CMOS/H) 18 SIN P43 21 UART serial data input pin. Since this , CMOS I/O pins, this pin is not provided with any P-channel transistor. Therefore the pin does not , Port 8 P42/SIN P43/SCK1 P44/SOT1 Port 7 Extended I/O serial interface 1 External interrupt Fujitsu
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QFP-100 DS07-13706-4E FPT-100P-M06 FPT-100P-M05
Abstract: P42/SIN P43/SCK1 P44/SOT1 VCC P45/SIN1 P46/ADTG P47/SCK0 C P50/SDA0/SOT0 P51/SCL0/SIN0 P52/SDA1 1 2 , /RDY P37/CLK P40/SCK P41/SOT P42/SIN P43/SCK1 P44/SOT1 VCC P45/SIN1 P46/ADTG P47/SCK0 C 1 2 3 4 5 6 , ) P40 18 16 SCK F (CMOS/H) P41 19 17 SOT F (CMOS/H) P42 20 18 SIN F (CMOS/H) P43 21 19 , transistor. Therefore the pin does not allow a current to flow to the Vcc side even when applied with a , TOT0, TOT1/ P82, P83 TIN0, TIN1/ P80, P81 P40/SCK P41/SOT P42/SIN P43/SCK1 P44/SOT1 P45/SIN1 P46 Fujitsu
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DS07-13706-3E F0110
Abstract: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AMPLIFICATION PACKAGE DIMENSION (in mm) FEATURES â'¢ H ig h fT 2 . 1± 0.1 14 G H z T Y P . â'¢ H ig h gain | S 2i e | 2 = 1 4 d B T Y P . o o @ f = 2 GHz, V ce +l = 3 V , , P u l s e d M e a s u r e by u sin g 3 - t e r m i n a l b rid g e w ith e m i t t e r pin c o n , 6.629 6.17 5.773 5.405 5.085 4.789 4.553 4.320 4.106 3.954 3.801 3.661 3.545 3.42 3.290 -
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Ic fr 9888
Abstract: transistor N-channel type transistor P-ch B Diffused resistor · CMOS level hysteresis input Fujitsu
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MB90670 MB90675 Self-Oscillating mb90p ROM80 MBM27C1000 MB90675 Series DS07-13602-5E F2MC-16L MB90670/675 MB90671/672/673/T673/P673 MB90676/677/678/T678/P678
Abstract: standby) Unlike the CMOS I/O pin, there is no Pch transistor. Therefore, when the device power is shut off Fujitsu
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MB91F109 DS07-16304-2E
Abstract: drain configuration. If they are used as input ports, the output transistor is turned off, so that the Fujitsu
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7-segment digital clock circuit DS07-13718-1E MB90M405 MB90MF408/M408/M407/MF408A/ MB90M408A/M407A F0203
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