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sin 3545 transistor

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Abstract: (see NOTE) Rating Supply Voltage Oscillator Transistor Base, Emitter Input Voltage Input Voltage for , output Oscillator transistor base pin Oscillator transistor collector pin Oscillator transistor emitter , Dependence 9 MB551 MB551 (TEST CIRCUIT - 1, RECOMMENDED PRINTED CIRCUIT BOARD USED) Fig. 9 - C/N, SIN vs , MICROELECTRONICS, INC. Integrated Circuits Division 3545 North First Street San Jose, CA 95134-1804 USA Tel ... OCR Scan
datasheet

16 pages,
421.44 Kb

UCN103C TEL Prober sin 3545 transistor MURATA VCO Series Fujitsu 10ghz transistor colpitts oscillator construction mb551 MB551 TEXT
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Abstract: MGF431OD MGF431OD Series L1~o- o~i -oqofDESCRIPTION The MGF431OD MGF431OD series super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits , 97.7 K MSG/MAG (dB) 5.347 5.058 4.769 4.437 4.105 3.825 3.545 3.337 3.129 2.984 2.839 2,722 , .' · MAX. (da) ~ · (GHz). ·Z~ 100 ~ %" ... Mitsubishi
Original
datasheet

5 pages,
296.2 Kb

mitsubishi mgf MGF43180 MGF1902B-65 mgf431 MGF1802 MGF431OD TEXT
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Abstract: OPERATING CONDITIONS Parameter S up ply voltage Reset, reset sin k curre nt V ref o u tp u t curre nt W , examples c and d. a Using NPN transistor Vcc(5V) o -MB3773 -MB3773 1 2 3 4 8 7 6 5 circuit R2=1k ct: R i= 1 M 777 b Using PNP transistor V cc (5V) o-MB3773 1 2 3 4 8 7 6 5 Logic circuit , . Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, USA Tel: (408) 922-9000 Fax: (408 ... OCR Scan
datasheet

25 pages,
2086.41 Kb

MB3773 TEXT
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Abstract: receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor , , particularly in production technology, the field effect transistor was little known until the early 1960 , transistor. With the development of semiconductor manufacturing technology and the need for lower energy ... California Eastern Laboratories
Original
datasheet

27 pages,
415.66 Kb

shockley diode application NE8001 universal fet biasing curve graph diagram of gunn diode NE800898-7H GaAs FET amplifer NE8681 impatt diode NE800495-4 ne800495-6 NE24406 NE800196 AN82901-1 gunn diode ghz s-parameter AN82901-1 universal jfet biasing curve graph AN82901-1 SK3448 AN82901-1 ne8002 AN82901-1 NE72089 AN82901-1 diode deg avalanche zo 150 63 AN82901-1 NE800296 AN82901-1 AN82901-1 AN82901-1 TEXT
datasheet frame
Abstract: receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor , , particularly in production technology, the field effect transistor was little known until the early 1960 , transistor. With the development of semiconductor manufacturing technology and the need for lower energy ... California Eastern Laboratories
Original
datasheet

27 pages,
280.79 Kb

NE21889 GUNN DIODE gunn diode datasheet NE9004 NE868296 NE800898-6 NE800898-4 ne800495-6 NE72089 NE8001 shockley diode application NE800495-4 shockley diode NE868199 AN82901-1 SK3448 AN82901-1 ne8002 AN82901-1 diode deg avalanche zo 150 63 AN82901-1 NE24406 AN82901-1 NE800196 AN82901-1 NE800296 AN82901-1 AN82901-1 AN82901-1 TEXT
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Abstract: com parator section (PWM Com p.) Threshold voltage Input sin k current Input source current O utput , configuration, and can drive an external PNP transistor. The on current value can be set up to a m axim um of 30 , . co.jp/ North and South America FUJITSU M IC R O ELEC TR O N IC S , INC. S em iconductor Division 3545 N ... OCR Scan
datasheet

29 pages,
2299.79 Kb

S04-27216-2E TEXT
datasheet frame
Abstract: of this series w as to configure a device that can be used in as m any voltage sen sin g ap p lica , b3b7B53 01D11S7 01D11S7 flD5 3-545 MC34161 MC34161 MC33161 MC33161 Figure 21. Positive and Negative Overvoltage , transistor will eventually pump-up the output capacitor until its voltage exceeds the input threshold of ... OCR Scan
datasheet

13 pages,
292.11 Kb

MC34161 MC33161 TEXT
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Abstract: Replaced:"URXD" with "SOUT" . Replaced:"URXD" with "SIN". Fig.41 is modified. Replaced:"FFFBH" with , 3-10 Pull-up transistor standard characteristics I IL-V I . 3-11 Pull-down transistor standard characteristics IIL-VI ... Renesas Technology
Original
datasheet

238 pages,
2135.72 Kb

wiring diagrams* bosch biphase TEXT
datasheet frame
Abstract: . Replaced:"PUPDJ" with "PUP4J". Replaced:"URXD" with "SOUT" . Replaced:"URXD" with "SIN". Fig.41 is , ) . 3-10 Pull-up transistor standard characteristics I IL-V I . 3-11 Pull-down transistor standard characteristics IIL-VI ... Mitsubishi
Original
datasheet

237 pages,
2103.88 Kb

M37630T-RFS M37630M4T-XXXFP M37630M4T package drawing wiring diagrams* bosch biphase TEXT
datasheet frame
Abstract: transistor BC 337 CTBC 337 Replaced:"URXD" with "SOUT" . Replaced:"URXD" with "SIN". Fig.41 is modified. Replaced:"FFFBH" with ... Renesas Electronics
Original
datasheet

240 pages,
2154.44 Kb

SERIES MELPS 740 SOFTWARE USERS MANUAL wiring diagrams* bosch biphase ctbc 337 40 TEXT
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