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Part : SI2302DS215 Supplier : NXP Semiconductors Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : SI2302DS,215 Supplier : Nexperia Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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Part : SI2302DS215 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 110,567 Best Price : $0.16 Price Each : $0.20
Part : SI2302DS-T1 Supplier : Vishay Intertechnology Manufacturer : Bristol Electronics Stock : 1,625 Best Price : $0.1125 Price Each : $0.5625
Part : SI2302DS,215 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 5 Best Price : $0.30 Price Each : $0.30
Part : SI2302DS,215 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 5 Best Price : $0.30 Price Each : $0.30
Part : SI2302DS,215 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 12 Best Price : $0.13 Price Each : $0.6910
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Part : SI2302DS,215. Supplier : NXP Semiconductors Manufacturer : Farnell element14 Stock : - Best Price : £0.1070 Price Each : £0.1070
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si2302ds Datasheet

Part Manufacturer Description PDF Type
SI2302DS Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original
Si2302DS Toshiba Power MOSFETs Cross Reference Guide Original
SI2302DS,215 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 2.5 A; Q<sub>gd</sub> (typ): 1.6 nC; R<sub>DS(on)</sub>: 85@4.5V115@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original
SI2302DS-E3 Vishay Transistor Mosfet N-CH 20V 2.8A 3TO-236 Original
Si2302DS SPICE Device Model Vishay N-Channel 1.25-W, 2.5-V Rated MOSFET Original
Si2302DS-T1 Vishay Transistor Mosfet N-CH 20V 2.8A 3TO-236 REEL Original
SI2302DS-T1 Vishay Intertechnology N-Channel 1.25-W, 2.5-V Rated MOSFET Original
Si2302DS-T1-E3 Vishay Transistor Mosfet N-CH 20V 2.8A 3TO-236 REEL Original
SI2302DST/R Philips Semiconductors Transistor Mosfet N-CH 20V 2.5A 3 pin SOT-23 T/R Original

si2302ds

Catalog Datasheet MFG & Type PDF Document Tags

Si2302DS

Abstract: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -53600-Rev. D, 22-May-97 11-1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , -May-97 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 10 Transfer , Temperature (_C) 11-3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain
Temic Semiconductors
Original
2302DS S-53600--R

A1 marking code

Abstract: VNLR02 Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -51353-Rev. B, 11-Dec-96 1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , , VGEN = 4.5 V, RG = 6 W 36 A 45V ns VNLR02 Siliconix S-51353-Rev. B, 11-Dec-96 Si2302DS , Temperature (_C) 3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode
Temic Semiconductors
Original
A1 marking code S-51353 na4a S-51353--R

Si2302DS

Abstract: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) ID (A , 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25 , FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE , -53600-Rev. D, 22-May-97 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , 408-970-5600 2-3 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain
Vishay Siliconix
Original

Si2302DS

Abstract: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) ID (A , 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25 , FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE , -53600-Rev. D, 22-May-97 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , 408-970-5600 2-3 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain
Vishay Siliconix
Original

si2302ds

Abstract: SI2302DS N-channel enhancement mode field-effect transistor Rev. 01 - 03 September 2001 M3D088 , using TrenchMOSTM1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s s , . TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors SI2302DS N-channel , Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 03aa17 120 , 2001 3 of 14 Philips Semiconductors SI2302DS N-channel enhancement mode field-effect
Philips Semiconductors
Original
MSB003 MBB076

Si2302DS

Abstract: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -53600-Rev. D, 22-May-97 1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , , VGEN = 4.5 V, RG = 6 W 36 A 45V ns VNLR02 Siliconix S-53600-Rev. D, 22-May-97 Si2302DS , Temperature (_C) 3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode
Temic Semiconductors
Original

MSB003

Abstract: SI2302DS SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 - 20 November 2001 , package using TrenchMOSTM1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s , Electronics N.V. MBB076 s SI2302DS Philips Semiconductors N-channel enhancement mode , November 2001 2 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect , November 2001 3 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect
Philips Semiconductors
Original

mitac 6120

Abstract: PDD15 7 PDD8 7 PDD6 R169 7 PDD9 5.6K 7 PDD5 7 PDD10 0603B 7 PDD4 D S Q16 SI2302DS SOT23_FET pull , GND GND CONN_AMP11201-6_60 GND +5VS_HDD Q12 (+5VS) S D SI2302DS SOT23_FET +12V 2 1M 0603B 2 +5V RP38 , GND 1 1 S C236 0.1U 0603B D SI2302DS SOT23_FET +12V 2 C223 1U BEAD_120Z/100M 0603B 0805C Q18 (+5VS
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Original
PDD15 mitac 6120 RP66 L25D mitac RDDP15 RDDP10 DTC144WK RP33X8 16P8R

Si2302DS

Abstract: SPICE Device Model Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -Apr-01 www.vishay.com 1 SPICE Device Model Si2302DS Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , : 70983 17-Apr-01 SPICE Device Model Si2302DS Vishay Siliconix COMPARISON OF MODEL WITH MEASURED
Vishay Siliconix
Original

Si2302DS

Abstract: SPICE Device Model Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Characteristics · N-channel Vertical DMOS · Macro-Model (Sub-circuit) · Level 3 MOS · Applicable for Both Linear and Switch Mode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode , : 70983 1 SPICE Device Model Si2302DS Model Evaluation N-Channel Device (TJ=25°C Unless Otherwise , , Duty Cycle 2% Siliconix 4/17/01 Document: 70983 2 SPICE Device Model Si2302DS
Vishay Intertechnology
Original

SI2302DS

Abstract: Tem ic S e m i c o n d u c t o r s 2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product , -236 (SOT-23) G S T Ï Ï /' Top View SÎ2302DS (A2)* Marking Code Absolute Maximum Ratings (Ta = , W SÌ2302DS Specifications3 Tem ic S e m i c o n d u c t o r s Limits Parameter Static , s SÎ2302DS Typical Characteristics (25 °C Unless Otherwise Noted) I D - Drain Current (A , -53600- Rev. D, 22-May-97 U-15 SÍ2302DS Typical Characteristics (25 °C Unless Otherwise Noted
-
OCR Scan
S-53600--

Si2302DS

Abstract: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -51353-Rev. B, 11-Dec-96 4-1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , -Dec-96 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 10 Transfer , Temperature (_C) 4-3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain
Temic Semiconductors
Original

SI2302DS-T1

Abstract: Si2302ADS-T1-E3 Specification Comparison Vishay Siliconix Si2302ADS vs. Si2302DS Description: N-Channel, 2.5 V (G-S) MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2302ADS-T1 Replaces Si2302DS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free version) Replaces Si2302DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si2302ADS Si2302DS Drain-Source Voltage , °C/W Si2302ADS Si2302DS PD W SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Vishay Siliconix
Original
2302ADS 2302ADS-T1 2302DS-T1 2302ADS-T1-E3

Si2302DS

Abstract: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) ID (A , 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25 , FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE , -53600-Rev. D, 22-May-97 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , 408-970-5600 2-3 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain
Vishay Siliconix
Original

2N2222 NPN Transistor features

Abstract: transistor 4F si2302ds (V) 4.8 NPN 2N2222 Figure 6 shows the output characteristics of an N- 4.6 , figures tell us the general purpose of transistors 90% MOS si2302ds (e.g. 2N2222, 2N3904 , :(8863)577-2510 5 AN00-SR05EN July 2000 Characteristics of N-type MOSFET Si2302DS Transistor IDmax VGS(TH) Si2302DS 10A 0.65Vmin RDS 0.085 @ VGS=4.5V 0.115 @ VGS=2.5V remark
Analog Integrations
Original
AIC1639 AIC1638 2N2222 NPN Transistor features transistor 4F mosfet driver with npn transistor NPN 2n3904 transistor model list 2n2222 npn transistor general purpose 100KH

B470K

Abstract: n244 #3 14 SI2302DS C202 4.7U 1206 SOT23_FET GND 7 CD_RSTDRV 2 T_DATA C199 10U 1210 R177 1K 0603B , 3 FDD CONNECTOR VCC5 C152 4.7U Q15 1206 SI2302DS SOT23_FET L32 BEAD 0805C GND JP501 1 JP_SMT1 , LED_1102W GND D2 CONN_G462-01_N2447 CONN_G462-01_N2447 Q5 GND VCC5 D S SI2302DS G C135 10U
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Original
B470K n244 SDD13 RP23 2N7002-SOT23 PDD11 PDD13 PDD12 PDD14 RDDP11 RDDP13

mosfet driver with npn transistor

Abstract: 2N2222 NPN Transistor features ; (2) 4.8 (V) MOS si2302ds NPN 2N2222 pinch-off or saturation region , whereVDSVGS-VT , si2302ds 80% 70% transistors (e.g. 2N2222, 2N3904.etc) are not recommended due to its low current , N-type MOSFET Si2302DS Transistor IDmax VGS(TH) Si2302DS 10A 0.65Vmin RDS 0.085 @ VGS
Analog Integrations
Original
npn 2n2222 2N2222 2n3904 type of transistor 2n2222 npn bipolar junction fet 2n2222 022vmax AN00-006

2N3904

Abstract: NPN 2n3904 ) MOS si2302ds NPN 2N2222 pinch-off or saturation region , whereVDSVGS-VT ; 4.6 (3) linear , The figures tell us the general purpose of 90% MOS si2302ds 80% 70% transistors (e.g , Si2302DS Transistor IDmax VGS(TH) Si2302DS 10A 0.65Vmin RDS 0.085 @ VGS=4.5V 0.115 @
Analog Integrations
Original
2N2222A 2SD1803 Transistor 2SD1803

rp36

Abstract: SDD12 PDD10 PDD4 PDD7 R103 5.6K 2 0603B D S Q26 SI2302DS SOT23_FET pull hi to +5vs_hdd HDD_RST , CONN_AMP11201-6_60 GND +5VS_HDD Q24 S D SI2302DS SOT23_FET +12V 2 (+5VS) +5V RP510 HDD_RST# PIOCS16# SIOCS16 , C565 0.1U 0603B Q502 D SI2302DS SOT23_FET +12V 2 (+5VS) +5V D S GND 2 G 1 3 GND Q503
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Original
SDD12 SDD11 rp36 C557 RDDP12 RDDP14 RIRQ14 CL-190G CL190 RDDS10

2N2222 NPN Transistor features

Abstract: 2N2222 2n3904 regions of 5 operation: (1) cutoff region, where VGS VT; (2) 4.8 (V) MOS si2302ds NPN , The figures tell us the general purpose of 90% MOS si2302ds transistors (e.g. 2N2222, 2N3904 , N-type MOSFET Si2302DS Transistor IDmax VGS(TH) RDS Remark Si2302DS 10A 0.65Vmin
Analog Integrations
Original
AN013 NPN SWITCHING transistor 2N2222 2n3904 for oscillator 2N2222 transistor TL+2N2222A+npn+transistor 2n2222 npn

CDRH104R

Abstract: D1FH3 Si2302DS, and Fairchild Semiconductor FDN335N is attached in this document. Refer to " Reference Data". In , 4 No. CDRH104R/22 µH CPH6401 (1) S-8460B00AFT (2) FTS2001 (3) CPH3403 (4) (5) Si2302DS (6 , CPH6401 (16) CDRH104R/47 µH 3.3 V*1 CDRH104R/22 µH (17) (18) FTS2001 (19) CPH3403 (20) (21) Si2302DS (22 , ., Vth = 0.65 V min., Si2302DS Vishay Siliconix RDS(ON) = 0.115 max. (VGS = 2.5 V), SOT-23 package VGS = , ) 100 1000 (5) S-8460B00AFT (VOUT = 3.3 V) 100 Si2302DS,D1FH3,CDRH104R/22 H µH Si2302DS, D1FH3
Seiko Instruments
Original
S-8460 CDRH104R D1FH3

nichicon super through capacitor 4700 uf 50 v

Abstract: S-8460B00AFT-TBG reference, efficiency data using Sanyo CPH6401, CPH3403, and FTS2001, Vishay Siliconix Si2302DS, and , ) CPH3403 (4) (5) Si2302DS (6) FDN335N (7) CDRH104R/10 µH CPH6401 (8) CDRH104R/47 µH 2.5 V*2 , µH (17) (18) FTS2001 (19) CPH3403 (20) (21) Si2302DS (22) FDN335N (23) CDRH104R/10 µH , ., Si2302DS Vishay Siliconix RDS(ON) = 0.115 max. (VGS = 2.5 V), SOT-23 package VGS = 8 V max., ID = 1.7 A , -8460B00AFT (VOUT = 3.3 V) 10 100 IOUT(mA) 1000 (6) S-8460B00AFT (VOUT = 3.3 V) Si2302DS,D1FH3
Seiko Instruments
Original
nichicon super through capacitor 4700 uf 50 v S-8460B00AFT-TBG FDN337N MA2Q737 RB411D shindengen regulator
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