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SI 5000 IFM Electronic Flow monitor Dimensions ø x L: 50 x 113 mm Dimensions, sensor ø x L: 7.7 x 45 mm Operating temperature: -25...+80 °C Design: PNP Material, sensor: V4A (1.4404) Setting range: 3...300 (liquid) / 200...3000 cm/s (gas) Connection: M18 Internal Thread Electri 6 from €249.60 (Aug 2016) Distrelec Buy
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si 4422

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description MIC4421 MIC4421 , the largest MOSFETs with an improved safe operating mar gin. The MIC4421/4422 accepts any logic input , against damage from electrostatic discharge. MIC4421/4422 drivers can replace three or more discrete , MIC4421/4422 Micrel Ordering Information Part No. MIC4421CN MIC4421CN MIC4421 MIC4421 BN MIC4421 MIC4421 CM MIC4421BM MIC4421BM , 50 mA Input Current (V,N > Vs) 1997 5-43 MIC4421/4422 Micrel < t a = 25°C with 4.5 V ... OCR Scan
datasheet

10 pages,
395.09 Kb

M1C4421 si 4422 MIC4421/4422 MIC4421 MIC4422 MIL-STD-883 TEXT
datasheet frame
Abstract: incorporating AGC functionality into their designs. Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS Package Style: Die GaAs MESFET !GaInP/HBT Features , 4-422 Rev A0 020115 NDA-410-D NDA-410-D Typical Bias Configuration Application notes related to biasing ... RF Micro Devices
Original
datasheet

6 pages,
80.7 Kb

NDA-410-D GaN Bias 25 watt Ablebond 84-1LMI 84-1LMI TEXT
datasheet frame
Abstract: AMPLIFIERS 2SWLPXP 7HFKQRORJ\ 0DWFKLQJ $SSOLHG Si BJT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS 3DFNDJH 6W\OH 'LH á Si Bi-CMOS GaInP/HBT )HDWXUHV · Reliable, Low-Cost HBT Design · 12.0dB Gain , 4-422 Rev A0 020115 NDA-410-D NDA-410-D 7\SLFDO %LDV &RQILJXUDWLRQ Application notes related to biasing ... RF Micro Devices
Original
datasheet

6 pages,
251.77 Kb

ablebond epoxy 84-1LMI NDA-410-D TEXT
datasheet frame
Abstract: MOSFET SMA RT P OWER 3-PHASE MOTO R DRI VE HYBRID 4422 (3 1 5) 7 0 1-6 7 5 1 4 7 0 7 D e y Road L , 20 19 18 17 16 15 14 13 12 11 AØ AØ V+ V+ BØ BØ CØ CØ COM COM Re v. D 2/1 0 3 PHASE SI X STEP DC , 0 Seconds) T C C ase O perat i ng T emperature MSK 4422 T J Junct i on T emperature -5 5 ° to + 1 , T est Conditions 2 M in. MSK 4422 Typ. M a x. UNITS BI AS SUPPLY CHA R ACTERISTICS Q u , MANCE CUR VES 3 Re v. D 2/1 0 A PPLI CATI ON NOTES MSK 4422 PIN DESC RIPTI ON VCC - Is the ... MS Kennedy
Original
datasheet

6 pages,
414.73 Kb

IL-PRF-38534 TEXT
datasheet frame
Abstract: 1500pF to 62,000pF MIC4421/4422 9A Peak Output 1 .Oii Output Impedance 25ns into 10,000pF 4.5V to 18V , Available 14-pin DIP 16-pm S O IC c [3 E c V ir-cul Fflul' 3 b*« H 3 S«'i» H 3 S,.ns, 1 3 3 ... OCR Scan
datasheet

4 pages,
108.88 Kb

mic4427 MIC1427 high side MOSFET driver charge pump 4422 dual mosfet 30V 2A power p MOSFET MIC427 4422 mosfet MIC4416/4417 MIC4417 MIC4416 TEXT
datasheet frame
Abstract: 13 12 -44.22 10 H Z ] N O T E S : HOUSING MATERIAL^ GLASS FILLED LIQUID CRYSTAL POLYMER (LCP); UL RATINGs 9 4 V -0 ; COLORs WHITE TERMINAL MATERIAL^ PHOSPHOR BRONZE VACUUM CAP MATERIAL^ STAINLESS STEEL COPLANARITY OF SMT TAILSs O.IO MAX. DIMENSIONS ARE IN MILLIMETERS. PACKAGING SPECIFICATIONS^ REFER TO CHART THIS PART, WHEN MATED WITH MOLEX U.S. PART NO. 7 174 | - 0 * * * OR MOLEX JAPAN PART NO , STACK HEIGHT QUALITY SYMBOLS LD o cn , : V ' CL o '< co m si a t: I Cd - jo I j ... OCR Scan
datasheet

2 pages,
187.86 Kb

k708 TEXT
datasheet frame
Abstract: , PARAGRAPH 3.11.1 CHANGED VERBIAGE. · PAGE 10, TABLE II: CHANGED VOS 50K RAD(Si), MAX FROM 2.5 mV TO 4 mV; CHANGED VOS 100K RAD (Si), MAX FROM 3 mV TO 4 mV. 05/03/10 · PAGE 12, TABLE IV: CHANGED VOS 50K RAD (Si), MAX FROM 3nA TO 4.5 nA; CHANGED VOS 100K RAD (Si), CHANGED MAX FROM 3.5 nA TO 4.5 nA; D 05/05/08 CHANGED CMRR 50K RAD (Si) MIN FROM 69dB TO 60 dB; CHANGED CMRR 100K RAD (Si) MIN FROM 66 dB TO 60 dB; CHANGED CMRR 200K RAD (Si) MIN FROM 63 dB TO 60 dB; CHANGED PSRR 50K ... Linear Technology
Original
datasheet

13 pages,
359.33 Kb

TM1019 RH1814M RH1814 TEXT
datasheet frame
Abstract: PARAMETER: Raster size Area total / active Anode pad size 7.3 x 7.3 53.29 / 44.22 mm 2 6.58 , nm Al Si 1% Cathode metallisation 1400 nm Ni Ag ­system suitable for epoxy and soft solder die ... Infineon Technologies
Original
datasheet

4 pages,
64.76 Kb

SIDC53D120H6 Q67050-A4100 4392S TEXT
datasheet frame
Abstract: twisted pairs. In-line cables are convenien to use. 47.24 44.22 0.5m 1 .6 4 ft 50.25 CFD24 CFD24 , — n E Z p jt SI 3J □ - CFX24 CFX24 Extension Cables - w ith One ... OCR Scan
datasheet

1 pages,
229.88 Kb

TEXT
datasheet frame
Abstract: /08 05/05/08 D · PAGE 10, TABLE II: CHANGED VOS 50K RAD(Si), MAX FROM 2.5 mV TO 4 mV; CHANGED VOS 100K RAD (Si), MAX FROM 3 mV TO 4 mV. PAGE 12, TABLE IV: CHANGED VOS 50K RAD (Si), MAX FROM 3nA TO 4.5 nA; CHANGED VOS 100K RAD (Si), CHANGED MAX FROM 3.5 nA TO 4.5 nA; CHANGED CMRR 50K RAD (Si) MIN FROM 69dB TO 60 dB; CHANGED CMRR 100K RAD (Si) MIN FROM 66 dB TO 60 dB; CHANGED CMRR 200K RAD (Si) MIN FROM 63 dB TO 60 dB; CHANGED PSRR 50K RAD (Si) MIN FROM 72dB TO 65 dB; CHANGED PSRR 100K RAD (Si) MIN ... Linear Technology
Original
datasheet

13 pages,
361.96 Kb

RH1814M TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.6254 -73.2 26.336 136.0 0.0284 0.900 0.4837 -178.4 4.422 79.0 0.0975 63.2 0.1773 -73.5 1.000 0.4901 178.2 4.014 76.3
/datasheets/files/siemens/ehdata/spar/bfr193w/w610v15m-v1.s2p
Siemens 09/08/1994 2.22 Kb S2P w610v15m-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFS17S BFS17S ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 10 V IC = 5 mA ! Common Emitter S-Parameters: February 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8738 -4.6 14.460 175.9 0.0026 0.600 0.4688 -142.1 4.422 89.0 0.0615 49.3 0.6012 -22.5 0.700 0.4575 -150.1 3.847 83.9
/datasheets/files/infineon/ehdata/spar/bfs17s/sm10v5m0.s2p
Infineon 06/09/1997 2.38 Kb S2P sm10v5m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.6254 -73.2 26.336 136.0 0.0284 0.900 0.4837 -178.4 4.422 79.0 0.0975 63.2 0.1773 -73.5 1.000 0.4901 178.2 4.014 76.3
/datasheets/files/infineon/ehdata/spar/bfr193w/w610v15m.s2p
Infineon 19/02/1996 2.22 Kb S2P w610v15m.s2p
! SIEMENS Small Signal Semiconductors ! BFP420 BFP420 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 4 V IC = 1.2 mA ! Common Emitter S-Parameters: January 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9693 -0.8 4.458 179.3 0.0010 -1.7 4.432 178.8 0.0028 83.0 0.9949 -0.9 0.050 0.9684 -2.8 4.422 177.5 0.0042 85.6
/datasheets/files/siemens/ehdata/spar/bfp420/2p4v01m2.s2p
Siemens 09/08/1994 3.01 Kb S2P 2p4v01m2.s2p
! SIEMENS Small Signal Semiconductors ! BFS481 BFS481 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 4 V IC = 6 mA ! Common Emitter S-Parameters: October 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8253 -1.9 15.253 178.2 0.0013 0.5981 -23.2 1.300 0.2571 -133.3 4.422 87.5 0.0760 63.0 0.5898 -23.6 1.400 0.2441 -140.0
/datasheets/files/infineon/ehdata/spar/bfs481/s34v06m0.s2p
Infineon 23/04/1996 3 Kb S2P s34v06m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP181 BFP181 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 10 V IC = 8 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.8184 -19.8 17.766 164.6 0.0113 4.549 74.0 0.0721 45.9 0.4982 -41.5 1.700 0.3573 -172.0 4.422 72.7 0.0736 45.8 0.4952
/datasheets/files/siemens/ehdata/spar/bfp181/p310v8m0-v1.s2p
Siemens 08/08/1994 2.35 Kb S2P p310v8m0-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.75 V IC = 6 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7393 -5.1 18.717 178.2 0.0036 0.7410 -160.5 4.422 82.8 0.0855 14.3 0.4163 -126.1 1.000 0.7450 -164.4 3.981 79.4 0.0849
/datasheets/files/infineon/ehdata/spar/bfy450/cyv756m0.s2p
Infineon 02/10/1996 2.79 Kb S2P cyv756m0.s2p
! SIEMENS Small Signal Semiconductors ! BFY193 BFY193 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 1 V IC = 40 mA ! Common Emitter S-Parameters: March 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.2998 -39.4 54.395 169.3 0.0040 0.600 0.8125 180.0 5.152 83.5 0.0335 47.0 0.2318 -150.3 0.700 0.8101 177.7 4.422 80.9
/datasheets/files/infineon/ehdata/spar/bfy193/xf1v040m.s2p
Infineon 15/09/1997 2.78 Kb S2P xf1v040m.s2p
! SIEMENS Small Signal Semiconductors ! BFT93 BFT93 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -1.5 V IC = -1.5 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9086 -3.9 5.263 176.1 0.0077 0.9225 -18.0 0.150 0.8116 -54.2 4.422 141.0 0.1048 59.4 0.8608 -25.4 0.200 0.7731 -69.2
/datasheets/files/infineon/ehdata/spar/bft93/rf1v51m5.s2p
Infineon 13/08/1996 2.78 Kb S2P rf1v51m5.s2p
! SIEMENS Small Signal Semiconductors ! BFP420 BFP420 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 1 V IC = 1.2 mA ! Common Emitter S-Parameters: January 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9620 -0.9 4.422 179.4 0.0014 87.4 0.9999 -0.5 0.020 0.9593 -1.3 4.368 178.9 0.0024 86.4 0.9976 -0.8 0.030 0.9581
/datasheets/files/siemens/ehdata/spar/bfp420/2p1v01m2.s2p
Siemens 09/08/1994 3.01 Kb S2P 2p1v01m2.s2p