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Part Manufacturer Description Datasheet BUY
ISL74422ARHVF Intersil Corporation BUF OR INV BASED MOSFET DRIVER, CDFP16, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, DFP-16 visit Intersil
ISL74422ARHVX Intersil Corporation BUF OR INV BASED MOSFET DRIVER, UUC, ROHS COMPLIANT, HERMETIC SEALED PACKAGE visit Intersil
ISL74422ARHQF Intersil Corporation BUF OR INV BASED MOSFET DRIVER, CDFP16, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, DFP-16 visit Intersil
DLPC4422ZPC Texas Instruments DLP® Display Controller for DLP660TE (0.66 4K UHD) DMD 516-BGA visit Texas Instruments

si 4422

Catalog Datasheet MFG & Type PDF Document Tags

si 4422

Abstract: M1C4421 MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description MIC4421 , the largest MOSFETs with an improved safe operating mar gin. The MIC4421/4422 accepts any logic input , against damage from electrostatic discharge. MIC4421/4422 drivers can replace three or more discrete , MIC4421/4422 Micrel Ordering Information Part No. MIC4421CN MIC4421 BN MIC4421 CM MIC4421BM , 50 mA Input Current (V,N > Vs) 1997 5-43 MIC4421/4422 Micrel < t a = 25°C with 4.5 V
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si 4422 M1C4421 MIC4421/4422 MIC4422

84-1LMI

Abstract: Ablebond 84-1LMI incorporating AGC functionality into their designs. Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS Package Style: Die GaAs MESFET !GaInP/HBT Features , 4-422 Rev A0 020115 NDA-410-D Typical Bias Configuration Application notes related to biasing
RF Micro Devices
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84-1LMI Ablebond 84-1LMI GaN Bias 25 watt

ablebond epoxy

Abstract: 84-1LMI AMPLIFIERS 2SWLPXP 7HFKQRORJ\ 0DWFKLQJ $SSOLHG Si BJT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS 3DFNDJH 6W\OH 'LH á Si Bi-CMOS GaInP/HBT )HDWXUHV · Reliable, Low-Cost HBT Design · 12.0dB Gain , 4-422 Rev A0 020115 NDA-410-D 7\SLFDO %LDV &RQILJXUDWLRQ Application notes related to biasing
RF Micro Devices
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ablebond epoxy
Abstract: MOSFET SMA RT P OWER 3-PHASE MOTO R DRI VE HYBRID 4422 (3 1 5) 7 0 1-6 7 5 1 4 7 0 7 D e y Road L , 20 19 18 17 16 15 14 13 12 11 AØ AØ V+ V+ BØ BØ CØ CØ COM COM Re v. D 2/1 0 3 PHASE SI X STEP DC , 0 Seconds) T C C ase O perat i ng T emperature MSK 4422 T J Junct i on T emperature -5 5 ° to + 1 , T est Conditions 2 M in. MSK 4422 Typ. M a x. UNITS BI AS SUPPLY CHA R ACTERISTICS Q u , MANCE CUR VES 3 Re v. D 2/1 0 A PPLI CATI ON NOTES MSK 4422 PIN DESC RIPTI ON VCC - Is the MS Kennedy
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IL-PRF-38534

4422 mosfet

Abstract: MIC427 1500pF to 62,000pF MIC4421/4422 9A Peak Output 1 .Oii Output Impedance 25ns into 10,000pF 4.5V to 18V , Available 14-pin DIP 16-pm S O IC c [3 E c V ir-cul Fflul' 3 b*« H 3 S«'i» H 3 S,.ns, 1 3 3
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4422 mosfet MIC427 4422 dual mosfet mic4427 MIC1427 high side MOSFET driver charge pump MIC4416/4417 MIC4417 MIC4416 MIC5018 IRFZ24 MIC4451/4452

k708

Abstract: 13 12 -44.22 10 H Z ] N O T E S : HOUSING MATERIAL^ GLASS FILLED LIQUID CRYSTAL POLYMER (LCP); UL RATINGs 9 4 V -0 ; COLORs WHITE TERMINAL MATERIAL^ PHOSPHOR BRONZE VACUUM CAP MATERIAL^ STAINLESS STEEL COPLANARITY OF SMT TAILSs O.IO MAX. DIMENSIONS ARE IN MILLIMETERS. PACKAGING SPECIFICATIONS^ REFER TO CHART THIS PART, WHEN MATED WITH MOLEX U.S. PART NO. 7 174 | - 0 * * * OR MOLEX JAPAN PART NO , STACK HEIGHT QUALITY SYMBOLS LD o cn , : V ' CL o '< co m si a t: I Cd - jo I j
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k708 I742-0

RH1814M

Abstract: RH1814 , PARAGRAPH 3.11.1 CHANGED VERBIAGE. · PAGE 10, TABLE II: CHANGED VOS 50K RAD(Si), MAX FROM 2.5 mV TO 4 mV; CHANGED VOS 100K RAD (Si), MAX FROM 3 mV TO 4 mV. 05/03/10 · PAGE 12, TABLE IV: CHANGED VOS 50K RAD (Si), MAX FROM 3nA TO 4.5 nA; CHANGED VOS 100K RAD (Si), CHANGED MAX FROM 3.5 nA TO 4.5 nA; D 05/05/08 CHANGED CMRR 50K RAD (Si) MIN FROM 69dB TO 60 dB; CHANGED CMRR 100K RAD (Si) MIN FROM 66 dB TO 60 dB; CHANGED CMRR 200K RAD (Si) MIN FROM 63 dB TO 60 dB; CHANGED PSRR 50K
Linear Technology
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RH1814M RH1814 TM1019

4392S

Abstract: Q67050-A4100 PARAMETER: Raster size Area total / active Anode pad size 7.3 x 7.3 53.29 / 44.22 mm 2 6.58 , nm Al Si 1% Cathode metallisation 1400 nm Ni Ag ­system suitable for epoxy and soft solder die
Infineon Technologies
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SIDC53D120H6 Q67050-A4100 4392S
Abstract: twisted pairs. In-line cables are convenien to use. 47.24 44.22 0.5m 1 .6 4 ft 50.25 CFD24 , â'" n E Z p jt SI 3J â¡ - CFX24 Extension Cables - w ith One -
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C1F24 IEEE-488 CFC24 CFX24-1M CFX24-2M CFX24-3M
Abstract: /08 05/05/08 D · PAGE 10, TABLE II: CHANGED VOS 50K RAD(Si), MAX FROM 2.5 mV TO 4 mV; CHANGED VOS 100K RAD (Si), MAX FROM 3 mV TO 4 mV. PAGE 12, TABLE IV: CHANGED VOS 50K RAD (Si), MAX FROM 3nA TO 4.5 nA; CHANGED VOS 100K RAD (Si), CHANGED MAX FROM 3.5 nA TO 4.5 nA; CHANGED CMRR 50K RAD (Si) MIN FROM 69dB TO 60 dB; CHANGED CMRR 100K RAD (Si) MIN FROM 66 dB TO 60 dB; CHANGED CMRR 200K RAD (Si) MIN FROM 63 dB TO 60 dB; CHANGED PSRR 50K RAD (Si) MIN FROM 72dB TO 65 dB; CHANGED PSRR 100K RAD (Si) MIN Linear Technology
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Abstract: ar d Cu r r en t Tr an sf er Rat i o h FE 200 300 200 150 Tr an si t i o n Fr eq u en cy , : (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Semiconductors
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ZXT10N15DE6 15DE6TA 15DE6TC D-81673
Abstract: 150 15 Tr an si t i o n Fr eq u en cy fT 150 Ou t p u t Cap aci t an ce Co b o Tu r , -8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 Zetex Semiconductors
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ZXT10P20DE6 T10P20DE6TA T10P20DE6TC

UC 4833

Abstract: MA2Z374 Variable Capacitance Diodes MA2Z374 (MA374) Silicon epitaxial planar type Unit: mm 0.30+0.10 ­0.05 For CATV tuner 1.7±0.10 Features 5° (0.4) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e , 120 160 200 Ambient temperature Ta (°C) CD rank classification 10 44.22 9 44.88 9
Panasonic
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UC 4833 SC-76A
Abstract: Tr an si t i o n Fr eq u en cy fT 100 Ou t p u t Cap aci t an ce Co b o 23 Tu r n , : (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Semiconductors
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ZXT10N20DE6 20DE6TA 20DE6TC
Abstract: Fo r w ar d Cu r r en t Tr an sf er Rat i o h FE 200 300 200 100 Tr an si t i o n Fr eq , : (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Semiconductors
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ZXT10N50DE6 50DE6TA 50DE6TC
Abstract: 60 12 Tr an si t i o n Fr eq u en cy fT 150 Ou t p u t Cap aci t an ce Co b o Tu r , Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 Zetex Semiconductors
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ZXT10P40DE6 T10P40DE6TA T10P40DE6TC
Abstract: Tr an si t i o n Fr eq u en cy fT 80 Ou t p u t Cap aci t an ce Co b o 21 Tu r n , , Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Zetex Semiconductors
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ZXT10P12DE6 T10P12DE6TA T10P12DE6TC

ST 7 flus 56

Abstract: 6P45S PositionI-RI2oi Folgende Bauelemente werden geändert: Widerstand in der Position I-RII? SI4-0,125-22 kOm+1o% in SI-4-0,125-I0k0nH-I0%-2o { Widerstand in der.Position I-RII8 SI-4-0,I25-22kOm+IO%B in SI-4-0,125-3 , die erste Ziffer aller Bauelementepositionen von 4 in 3, z.B. Pi 4422 in Fi 3422, ohne daß sich die
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6P45S ST 7 flus 56 KD521D 3D24N RFT Service Mitteilung service-mitteilungen MP-25B I-T17 125-I0 I25-22 I-C98

30554

Abstract: 733-106 irradiating. Dose rate is maintained between 50 - 300 Rads(Si)/sec and all samples are exposed to a total dose of 300 kRads(Si). II. RADIATION SOURCE A. Type C. Biasing (QKDQFHG 6ROXWLRQV $QDORJ (QJLQHHULQJ , 300 Rads(Si)/sec with an accuracy of +/- 10%. B. Dosimetery Thermoluminescence Dosimetery is , 84.43Rads(Si)/sec Military Data Sheet : MNCLC420A-X REV 0A0 N 12.0 8.0 4.0 CLC420AJ-QML Total , = uA 0.0 -4.0 -8.0 -12.0 0.1 1 10 100 1000 Total Dose kRads(Si) Total Dose kRads(Si
National Semiconductor
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30554 733-106 MIL-STD-883
Abstract: . Ì SI GN S Optimum Technology Matching® Applied Ì Ì Ì GaAs HBT Applications GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT , EUDirective2002/95/EC (at time of this document revision). 2 or more SI GN S Simultaneous Combination , 15 10 1.25 1 0.75 0.5 5 SI GN S 0.25 0 0.4 1.4 2.4 3.4 4.4 5.4 , 4. 5.0 0 10.0 SI GN S 0. 2 22dBm 21dBm 20dBm 10. 0 0. 2 0 0. 4 0 RF Micro Devices
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FPD750DFN 22A114 MIL-STD-1686 MIL-HDBK-263 J-STD-020C EB750DFN-BC
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