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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , PARAGRAPH 3.11.1 CHANGED VERBIAGE. · PAGE 10, TABLE II: CHANGED VOS 50K RAD(Si), MAX FROM 2.5 mV TO 4 mV; CHANGED VOS 100K RAD (Si), MAX FROM 3 mV TO 4 mV. 05/03/10 · PAGE 12, TABLE IV: CHANGED VOS 50K RAD (Si), MAX FROM 3nA TO 4.5 nA; CHANGED VOS 100K RAD (Si), CHANGED MAX FROM 3.5 nA TO 4.5 nA; D 05/05/08 CHANGED CMRR 50K RAD (Si) MIN FROM 69dB TO 60 dB; CHANGED CMRR 100K RAD (Si) MIN FROM 66 dB TO 60 dB; CHANGED CMRR 200K RAD (Si) MIN FROM 63 dB TO 60 dB; CHANGED PSRR 50K ... | Original |
13 pages, |
TM1019 RH1814M RH1814 RH1814M abstract |
| Abstract: incorporating AGC functionality into their designs. Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS Package Style: Die GaAs MESFET !GaInP/HBT Features , equation: JC (°C/Watt)=242[TJ(°C)/144] Suggested Voltage Supply: VCC1 >4.7V, VCC2 >5.0V 4-422 Rev ... | Original |
6 pages, |
NDA-410-D GaN Bias 25 watt Ablebond 84-1LMI 84-1LMI NDA-410-D abstract |
| Abstract: PARAMETER: Raster size Area total / active Anode pad size 7.3 x 7.3 53.29 / 44.22 mm 2 6.58 , nm Al Si 1% Cathode metallisation 1400 nm Ni Ag Âsystem suitable for epoxy and soft solder die ... | Original |
4 pages, |
SIDC53D120H6 Q67050-A4100 4392S SIDC53D120H6 abstract |
| Abstract: obowizujce midzynarodowe normy. Instalacja i rozpoczcie pracy poszczegé«„nych elementé«" wymaga dostosowania si , upewni si, czy uytkowanie bd zastosowanie opisanych produkté«" spelnia wszystkie wymogi bezpieczestwa wraz , TwinSAFE sklada si z bezpiecznych wej (KL1904 KL1904), bezpiecznych wyj (KL2904 KL2904) i modulé«" logicznych (KL6904 KL6904). , TwinSAFE moe komunikowa si z bezpiecznymi zaciskami wejciowymi, bezpiecznymi zaciskami wyjciowymi oraz , zacisku logicznego TwinSAFE sklada si z modulé«" lczonych w jedn lub kilka grup TwinSAFE. Grupy TwinSAFE ... | Original |
44 pages, |
CX1000 KL6904-FB KL6904 KL6904-FB abstract |
| Abstract: at 50% Bias 45% Power-Added Efficiency SI GN S The FPD750DFN FPD750DFN is a packaged depletion mode , ® Applied GaAs HBT Applications GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT W GaAs pHEMT Si CMOS Si BJT NE GaN HEMT Drivers or Output Stages in PCS/Cellular Base Station , EUDirective2002/95/EC (at time of this document revision). 2 or more SI GN S Simultaneous Combination , 30 15 10 1.25 1 0.75 0.5 5 SI GN S 0.25 0 0.4 1.4 2.4 3.4 4.4 ... | Original |
12 pages, |
si 4422 FPD750SOT89 FPD750DFN FPD1500DFN FPD750DFN abstract |
| Abstract: Variable Capacitance Diodes MA2Z374 MA2Z374 (MA374 MA374) Silicon epitaxial planar type Unit: mm 0.30+0.10 �05 For CATV tuner 1.7�10 Features 5� (0.4) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e , 200 Ambient temperature Ta (癈) CD rank classification 10 44.22 9 44.88 9 8 7 6 ... | Original |
3 pages, |
ma374 MA2Z374 MA374 MA2Z374 abstract |
| Abstract: sólo se abandona en el reinicio si EDM2 da la señal "1". 22 Módulos de función 4.4.2.2 , si se dieran tales circunstancias. 1.2.2 Obligación de diligencia del usuario · · El usuario , capÃtulo Descripción del producto). · los productos TwinSAFE sólo se utilizan si se encuentran en , terminal TwinSAFE Logic (KL6904 KL6904) contiene módulos de funciones que se parametrizan y se enlazan entre sà , TwinSAFE Connection asignada. Si otros grupos deben acceder a las entradas y salidas, se puede utilizar el ... | Original |
44 pages, |
siemens sirius ESTADO CX1000 KL6904-FB KL6904 KL6904-FB abstract |
| Abstract: 1.1.2 Condizioni di fornitura Si applicano le condizioni generali di fornitura della società Beckhoff , e alle uscite di una TwinSAFE Connection assegnata. Se si desidera che altri gruppi accedano agli , TwinSAFE Communication all'interno del TwinSAFE Group e gli errori all'interno di un blocco funzionale si , blocchi funzionali assegnati. Una volta arrestate, tutte le uscite assegnate al TwinSAFE Group si trovano , si trovano nello stato STOP e, di conseguenza, tutte le rispettive uscite sono nello stato di ... | Original |
44 pages, |
CX1000 KL6904-FB KL6904 KL6904-FB abstract |
| Abstract: § 434 paragraphe 1 phrase 1 n° 1 du Code Civil Allemand. Si la présente documentation contient des , sans avis préalable. Toute demande de modification de produits déjà livrés est exclue si elle se base , être liés aux entrées et sorties d'une connexion TwinSAFE. Si d'autres groupes doivent accéder aux , sorties sont au niveau bas. Si l'entrée n'est pas liée, elle présente l'état TRUE Les fronts montant , réaliser un ET logique. En plus, on peut également définir pour chaque entrée si le signal d'entrée est un ... | Original |
44 pages, |
porte logique CX1000 KL6904-FB KL6904 KL6904-FB abstract |
| Abstract: dehctiws si tI .roticapac cihtylortcele Fu1 a htiw ssapyb ;1ODL_Q ot dekcart 2T tuptuO rekcarT egatloV .dedeen ton fi ,nepo peeK .dnammoc IPS yb ffo dna no dehctiws si tI .roticapac cihtylortcele Fu1 a htiw , ees( LES nip yb detceles si egatlov tupuo ;tuptuo )V6.2( V3.3 ro )V1.3( V5 ;3 tuptuO rotalugeR egatloV ;)2.4.3 osla ees( LES nip yb detceles si egatlov tuptuo ;tuptuo V6.2 ro V3.3 ;2 tuptuO rotalugeR egatloV .egatlov siht morf deilppus si cigol godhctaw wodniw dna IPS ehT.srekcart egatlov eht rof ... | Original |
42 pages, |
regulator 4433 EHT list DO5022P-223 smd diode 5d smd transistor 6d sn 4447 DO5022P-473 P-DSO-36-12 output ic la 4451 TRANSISTOR BC 448 smd transistor yb od ANSI/EOS/ESD-S5.1-1993 P-DSO-36-12 abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| *SRC=SB120 SB120 SB120 SB120;DI_SB120 SB120 SB120 SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB120 SB120 SB120 SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) www.datasheetarchive.com/files/diodes-inc/spice-model/4422.mod |
Diodes, Inc. | 04/09/2012 | 0.17 Kb | MOD | 4422.mod |
| = Standard Microcircuit Drawing Description The Radiation Hardened ISL4422ARH is a non even the largest power MOSFETs in high frequency applications. The input of the ISL4422ARH can be krad(SI) Latch-Up Immune Negligible Sensitivity to Low Dose Rates I PEAK 9A(Min) TF (C L www.datasheetarchive.com/files/intersil/device_pages/device_isl74422rh.html |
Intersil | 07/09/2006 | 17.4 Kb | HTML | device_isl74422rh.html |
| # GHZ S MA R 50 !BFQ82 BFQ82 BFQ82 BFQ82, Si-NPN RF-Transistor in CEREC package !Vc = 3V, I c = 10mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .1 .664309 -71.37 22.65908 142.69 .029392 59.71 .814515 -33.66 .15 .665951 -94.86 19.19829 130.25 .037545 50.69 .694154 -44.49 .2 .666031 -112.0 16.24731 120.97 .042775 44 .713236 147.03 2.053753 44.22 .108810 43.35 .175536 -112.0 2.2 .725054 143.01 1.868120 39 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq82/a63v010m.s2p |
Siemens | 30/08/1990 | 2.05 Kb | S2P | a63v010m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFP181W BFP181W BFP181W BFP181W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 10 V IC = 4 mA ! Common Emitter S-Parameters: August 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .8 3.400 0.4315 153.1 2.226 46.4 0.1260 34.4 0.4422 -65.6 3.600 0.4434 148.6 2.108 43 .7 0.4422 -108.9 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfp181w/x310v4m0.s2p |
Siemens | 08/08/1994 | 3 Kb | S2P | x310v4m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFP181W BFP181W BFP181W BFP181W ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .399 101.0 0.0454 49.3 0.5181 -35.9 0.800 0.4422 -138.4 8.362 96.7 0.0486 48.5 0.4925 -36 .2 1.500 0.4119 -177.1 4.727 75.9 0.0687 50.5 0.4226 -41.1 1.600 0.4145 178.9 4.422 www.datasheetarchive.com/files/infineon/ehdata/spar/bfp181w/x310v15m.s2p |
Infineon | 14/08/1996 | 2.78 Kb | S2P | x310v15m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFP81 BFP81 BFP81 BFP81 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 12 V IC = 12 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .3 1.500 0.5644 158.1 3.701 62.8 0.0566 44.7 0.4422 -37.6 1.600 0.5722 154.1 3 .765 -28.9 0.1742 23.4 0.4422 -136.6 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/infineon/ehdata/spar/bfp81/pa12v12m.s2p |
Infineon | 14/08/1996 | 2.78 Kb | S2P | pa12v12m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFP81 BFP81 BFP81 BFP81 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 12 V IC = 12 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .3 1.500 0.5644 158.1 3.701 62.8 0.0566 44.7 0.4422 -37.6 1.600 0.5722 154.1 3 .765 -28.9 0.1742 23.4 0.4422 -136.6 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/download/6583727-145374ZC/bfp81.zip (PA12V12M.S2P) |
Infineon | 08/09/2000 | 473.99 Kb | ZIP | bfp81.zip |
| ! SIEMENS Small Signal Semiconductors ! BFP181W BFP181W BFP181W BFP181W ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .399 101.0 0.0454 49.3 0.5181 -35.9 0.800 0.4422 -138.4 8.362 96.7 0.0486 48.5 0.4925 -36 .2 1.500 0.4119 -177.1 4.727 75.9 0.0687 50.5 0.4226 -41.1 1.600 0.4145 178.9 4.422 www.datasheetarchive.com/download/66932934-145353ZC/bfp181w.zip (X310V15M.S2P) |
Infineon | 08/09/2000 | 457.68 Kb | ZIP | bfp181w.zip |
| ! SIEMENS Small Signal Semiconductors ! BFP181W BFP181W BFP181W BFP181W ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .399 101.0 0.0454 49.3 0.5181 -35.9 0.800 0.4422 -138.4 8.362 96.7 0.0486 48.5 0.4925 -36 .2 1.500 0.4119 -177.1 4.727 75.9 0.0687 50.5 0.4226 -41.1 1.600 0.4145 178.9 4.422 www.datasheetarchive.com/download/14524675-777305ZC/bfp181w.zip (X310V15M.S2P) |
Spice Models | 29/07/2012 | 457.96 Kb | ZIP | bfp181w.zip |
| 01803 CHICAGO, IL TEL: (708) 773-4422 FAX: (708) 773-2290 500 Park Blvd, Suite Beijing Hong Kong Macau Centre DongSi ShiTiaoLiJiaoQiao Beijing 100027, PR China HONG KONG www.datasheetarchive.com/files/vantis/docs/wcd00000/wcd000f5.htm |
Vantis | 11/12/1997 | 9.82 Kb | HTM | wcd000f5.htm |