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DS4422N+ Maxim Integrated Products IC SERIAL INPUT LOADING, 7-BIT DAC, DSO14, 3 X 3 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, TDFN-14, Digital to Analog Converter ri BuyFREE Buy
DS4422N+T&R Maxim Integrated Products IC SERIAL INPUT LOADING, 7-BIT DAC, DSO14, 3 X 3 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, TDFN-14, Digital to Analog Converter ri Buy
ISL74422ARHVF Intersil Corporation IC BUF OR INV BASED MOSFET DRIVER, CDFP16, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, DFP-16, MOSFET Driver ri Buy

si 4422

Catalog Datasheet Results Type PDF Document Tags
Abstract: MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description MIC4421 MIC4421 , the largest MOSFETs with an improved safe operating mar gin. The MIC4421/4422 accepts any logic input , against damage from electrostatic discharge. MIC4421/4422 drivers can replace three or more discrete , MIC4421/4422 Micrel Ordering Information Part No. MIC4421CN MIC4421CN MIC4421 MIC4421 BN MIC4421 MIC4421 CM MIC4421BM MIC4421BM , Current (V,N > Vs) 1997 5-43 MIC4421/4422 Micrel < t a = 25°C with 4.5 V < Vg < 18 V unless ... OCR Scan
datasheet

10 pages,
395.09 Kb

si 4422 MIC4421/4422 MIC4421 MIC4422 MIC4421/4422 abstract
datasheet frame
Abstract: , PARAGRAPH 3.11.1 CHANGED VERBIAGE. · PAGE 10, TABLE II: CHANGED VOS 50K RAD(Si), MAX FROM 2.5 mV TO 4 mV; CHANGED VOS 100K RAD (Si), MAX FROM 3 mV TO 4 mV. 05/03/10 · PAGE 12, TABLE IV: CHANGED VOS 50K RAD (Si), MAX FROM 3nA TO 4.5 nA; CHANGED VOS 100K RAD (Si), CHANGED MAX FROM 3.5 nA TO 4.5 nA; D 05/05/08 CHANGED CMRR 50K RAD (Si) MIN FROM 69dB TO 60 dB; CHANGED CMRR 100K RAD (Si) MIN FROM 66 dB TO 60 dB; CHANGED CMRR 200K RAD (Si) MIN FROM 63 dB TO 60 dB; CHANGED PSRR 50K ... Original
datasheet

13 pages,
359.33 Kb

TM1019 RH1814M RH1814 RH1814M abstract
datasheet frame
Abstract: /08 05/05/08 D · PAGE 10, TABLE II: CHANGED VOS 50K RAD(Si), MAX FROM 2.5 mV TO 4 mV; CHANGED VOS 100K RAD (Si), MAX FROM 3 mV TO 4 mV. PAGE 12, TABLE IV: CHANGED VOS 50K RAD (Si), MAX FROM 3nA TO 4.5 nA; CHANGED VOS 100K RAD (Si), CHANGED MAX FROM 3.5 nA TO 4.5 nA; CHANGED CMRR 50K RAD (Si) MIN FROM 69dB TO 60 dB; CHANGED CMRR 100K RAD (Si) MIN FROM 66 dB TO 60 dB; CHANGED CMRR 200K RAD (Si) MIN FROM 63 dB TO 60 dB; CHANGED PSRR 50K RAD (Si) MIN FROM 72dB TO 65 dB; CHANGED PSRR 100K RAD (Si) MIN ... Original
datasheet

13 pages,
361.96 Kb

RH1814M RH1814M abstract
datasheet frame
Abstract: AMPLIFIERS 2SWLPXP 7HFKQRORJ\ 0DWFKLQJ $SSOLHG Si BJT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS 3DFNDJH 6W\OH 'LH á Si Bi-CMOS GaInP/HBT )HDWXUHV · Reliable, Low-Cost HBT Design · 12.0dB Gain , , VCC2 >5.0V 4-422 Rev A0 020115 NDA-410-D NDA-410-D 7\SLFDO %LDV &RQILJXUDWLRQ Application notes ... Original
datasheet

6 pages,
251.77 Kb

84-1LMI NDA-410-D NDA-410-D abstract
datasheet frame
Abstract: incorporating AGC functionality into their designs. Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS Package Style: Die GaAs MESFET !GaInP/HBT Features , equation: JC (°C/Watt)=242[TJ(°C)/144] Suggested Voltage Supply: VCC1 >4.7V, VCC2 >5.0V 4-422 Rev ... Original
datasheet

6 pages,
80.7 Kb

NDA-410-D GaN Bias 25 watt Ablebond 84-1LMI 84-1LMI NDA-410-D abstract
datasheet frame
Abstract: PARAMETER: Raster size Area total / active Anode pad size 7.3 x 7.3 53.29 / 44.22 mm 2 6.58 , nm Al Si 1% Cathode metallisation 1400 nm Ni Ag ­system suitable for epoxy and soft solder die ... Original
datasheet

4 pages,
64.76 Kb

SIDC53D120H6 Q67050-A4100 4392S SIDC53D120H6 abstract
datasheet frame
Abstract: obowizujce midzynarodowe normy. Instalacja i rozpoczcie pracy poszczeg髄nych element" wymaga dostosowania si , upewni si, czy uytkowanie bd zastosowanie opisanych produkt" spelnia wszystkie wymogi bezpieczestwa wraz , TwinSAFE sklada si z bezpiecznych wej (KL1904 KL1904), bezpiecznych wyj (KL2904 KL2904) i modul" logicznych (KL6904 KL6904). , TwinSAFE moe komunikowa si z bezpiecznymi zaciskami wejciowymi, bezpiecznymi zaciskami wyjciowymi oraz , zacisku logicznego TwinSAFE sklada si z modul" lczonych w jedn lub kilka grup TwinSAFE. Grupy TwinSAFE ... Original
datasheet

44 pages,
1124.72 Kb

CX1000 KL6904-FB KL6904 KL6904-FB abstract
datasheet frame
Abstract: IV A LE N T CIRCUIT T ' A . '. T 2 EXPLA N A TIO N Pin Symbol Si to S OF T ER M , input Clock input aof R/L = H:STHR input. Si - * S tfi STHL output R/L = L:STHL input, S |?2 - * Si, STHR output Clock to clock in data Data is read into the data register at the rising edge. , is 1 2 3 4 5 Si s 2 s 3 S4 S5 s 6 s 7 s s 8 9 e 7 8 9 10 1 1 12 13 14 15 ' 1 6 , / +3462.5 / +3582.5 +3702.5 / / +3822.5 / +3942.5 / +4062.5 / +4182.5 / +4302.5 / +4422. 5 / +4542. 5 ... OCR Scan
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13 pages,
321.02 Kb

192-OUTPUT 192-OUTPUT abstract
datasheet frame
Abstract: irradiating. Dose rate is maintained between 50 - 300 Rads(Si)/sec and all samples are exposed to a total dose of 300 kRads(Si). II. RADIATION SOURCE A. Type C. Biasing (QKDQFHG 6ROXWLRQV $QDORJ (QJLQHHULQJ , 300 Rads(Si)/sec with an accuracy of +/- 10%. B. Dosimetery Thermoluminescence Dosimetery is , 84.43Rads(Si)/sec Military Data Sheet : MNCLC420A-X MNCLC420A-X REV 0A0 N 12.0 8.0 4.0 CLC420AJ-QML CLC420AJ-QML Total , = uA 0.0 -4.0 -8.0 -12.0 0.1 1 10 100 1000 Total Dose kRads(Si) Total Dose kRads(Si ... Original
datasheet

11 pages,
223.88 Kb

733-106 MIL-STD-883 MIL-STD-883 abstract
datasheet frame
Abstract: at 50% Bias 45% Power-Added Efficiency SI GN S The FPD750DFN FPD750DFN is a packaged depletion mode , ® Applied GaAs HBT Applications GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT W GaAs pHEMT Si CMOS Si BJT NE GaN HEMT Drivers or Output Stages in PCS/Cellular Base Station , EUDirective2002/95/EC (at time of this document revision). 2 or more SI GN S Simultaneous Combination , 30 15 10 1.25 1 0.75 0.5 5 SI GN S 0.25 0 0.4 1.4 2.4 3.4 4.4 ... Original
datasheet

12 pages,
770.46 Kb

FPD750SOT89 FPD750DFN FPD1500DFN si 4422 FPD750DFN abstract
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Datasheet Content (non pdf)

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*SRC=SB120 SB120 SB120 SB120;DI_SB120 SB120 SB120 SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB120 SB120 SB120 SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n )
www.datasheetarchive.com/files/diodes-inc/spice-model/4422.mod
Diodes, Inc. 04/09/2012 0.17 Kb MOD 4422.mod
No abstract text available
www.datasheetarchive.com/download/86945235-777291ZC/bf771w.zip (G310V15M.S2P)
Spice Models 29/07/2012 58.72 Kb ZIP bf771w.zip
No abstract text available
www.datasheetarchive.com/download/4195112-145405ZC/bfs17s.zip (SM10V5M0.S2P)
Infineon 08/09/2000 311.54 Kb ZIP bfs17s.zip
No abstract text available
www.datasheetarchive.com/download/45511550-145393ZC/bfr193w.zip (W610V15M.S2P)
Infineon 08/09/2000 59.46 Kb ZIP bfr193w.zip
! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.6254 -73.2 26.336 136.0 0.0284 59.8 0.4837 -178.4 4.422 79.0 0.0975 63.2 0.1773 -73.5 1.000 0.4901 178.2 4.014 76.3 0.1062
www.datasheetarchive.com/files/infineon/ehdata/spar/bfr193w/w610v15m.s2p
Infineon 19/02/1996 2.22 Kb S2P w610v15m.s2p
No abstract text available
www.datasheetarchive.com/download/14500678-145330ZC/bf771w.zip (G310V15M.S2P)
Infineon 08/09/2000 58.72 Kb ZIP bf771w.zip
! SIEMENS Small Signal Semiconductors ! BFS17S BFS17S BFS17S BFS17S ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 10 V IC = 5 mA ! Common Emitter S-Parameters: February 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8738 -4.6 14.460 175.9 0.0026 87.8 0.4688 -142.1 4.422 89.0 0.0615 49.3 0.6012 -22.5 0.700 0.4575 -150.1 3.847 83.9 0.0664
www.datasheetarchive.com/files/infineon/ehdata/spar/bfs17s/sm10v5m0.s2p
Infineon 06/09/1997 2.38 Kb S2P sm10v5m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP181 BFP181 BFP181 BFP181 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 10 V IC = 8 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.8184 -19.8 17.766 164.6 0.0113 79.0 74.0 0.0721 45.9 0.4982 -41.5 1.700 0.3573 -172.0 4.422 72.7 0.0736 45.8 0.4952 -42.0
www.datasheetarchive.com/files/siemens/ehdata/spar/bfp181/p310v8m0-v1.s2p
Siemens 08/08/1994 2.35 Kb S2P p310v8m0-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.6254 -73.2 26.336 136.0 0.0284 59.8 0.4837 -178.4 4.422 79.0 0.0975 63.2 0.1773 -73.5 1.000 0.4901 178.2 4.014 76.3 0.1062
www.datasheetarchive.com/files/siemens/ehdata/spar/bfr193w/w610v15m-v1.s2p
Siemens 09/08/1994 2.22 Kb S2P w610v15m-v1.s2p
No abstract text available
www.datasheetarchive.com/download/60935193-777344ZC/bfr193w.zip (W610V15M.S2P)
Spice Models 29/07/2012 59.74 Kb ZIP bfr193w.zip