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shockley diode application

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shockley diode application

Abstract: shockley diode CATALOG OF 4-LAYER DIODES CLEVITEj SHOCKLEY TRANSISTOR 1 SOI RAGE MILL ROAD « PALO ALTO. CAUK. General Information and Introduction to the Shockley 4-Layer Diode _ft The Shockley 4-layer diode is a two , suitable impurities. The symbol for the Shockley 4-layer diode is a modified "4". The slant line of the "4" , damage the device. ! N P N P 1 Conventional Current Flow ¿_ Symbol for the Shockley 4-layer diode , -layer diode is turned OFF by reducing the current flowing through the device below holding current (Ih).
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shockley diode

Abstract: opto triac TRIACs. All of these devices originate from the four-layer diode (also known as the Shockley diode). The four-layer diode is represented in figure 5 symbolically, and more importantly, functionally , -May-08 18131 (a) (b) (c) (d) Fig. 4 - Four-Layer Diode (Shockley Diode) For technical questions , Application Note Vishay Semiconductors TRIAC Coupler INTRODUCTION As is the case for TRIACs , : optocoupler.answers@vishay.com Document Number: 80053 Rev. 1.4, 06-May-08 Application Note TRIAC Coupler Vishay
Vishay Semiconductors
Original

shockley diode

Abstract: diode shockley TRIACs. All of these devices originate from the four layer diode (also known as the Shockley diode) the four layer diode is represented in Figure 5 symbolically, and more importantly functionally , ) (c) (d) 18131 Figure 5. Four Layer diode (Shockley Diode) The most important portion of , critical. Thus whether or not dV/dTcrq is important depends on the user's application. In either case of , ) Figure 10. Allowable Dissipated Power If the above two methods are not sufficient for the application
Vishay Semiconductors
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shockley diode application

Abstract: shockley diode Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and , interpretation of simulation results and their application to the real world. Zetex have created SPICE models , Application Note 23 Issue 2 March 1996 Application Note 23 Issue 2 March 1996 This application note is , current IC (ideally) follows the Shockley eq uati on th at defines the c ur rent through a P-N junction , illustrations on how these parameters affect transistor curves). AN23 - 3 Application Note 23 Issue 2
Zetex Semiconductors
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Logarithmic Amplifier

Abstract: Logarithmic correction factor, m, takes into account the deviation between the diode characteristic and Shockley , inverting amplifier with a feedback diode. With the diode being virtually anode-grounded, the op amp needs to generate a negative output voltage to forward bias the diode. For a given input current, IIN, the , between the voltage and current of a forward-biased diode. Figure 2 shows the characteristic of the , ) Figure 3. Log amp with diode (1) VF where VF and IF are the forward voltage and forward current
Texas Instruments
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shockley diode application

Abstract: IP4294CZ10-TBR high-level ESD protection diode structures for ultra high-speed signal lines and is encapsulated in an ultra small and leadless XSON10 plastic package. All signal lines are protected by a special diode , , the ground diodes between each channel and ground pins 3 and 8 are implemented as Shockley diodes , Semiconductors ESD protection for ultra high-speed interfaces 7. Application information The device is , sources like for example, a battery. A basic application diagram for the ESD protection of an HDMI
NXP Semiconductors
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IP4294CZ10-TBR shockley diode application IP4294

thyristor scr oscillator circuit

Abstract: shockley diode specifications which their electromechanical counterparts cannot fulfill. This application note presents the , ) Reverse Biased Gate Junction N P Anode Equivalent Diode Relationship Forward Bias and , Reverse Biased Junction (-) Anode Equivalent Diode Relationship J2 N Figure AN1001 , Junction MT1(-) GATE(-) IGT Gate P MT2(+) N P MT1 Equivalent Diode Relationship , N Blocking Junction P N P N MT2(-) MT2(-) IT Equivalent Diode
Littelfuse
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thyristor scr oscillator circuit shockley diode DIAC EQUIVALENT circuit diac with triac ac speed control SCHEMATIC circuit scr oscillator DIAC EQUIVALENT

shockley diode application

Abstract: IP4294 ) interfaces against ElectroStatic Discharge (ESD). The device includes four high-level ESD protection diode , -1) plastic package. All signal lines are protected by a special diode configuration offering ultra low line , channel and ground pins 3 and 8 are implemented as Shockley diodes. XS ON 1.2 Features and , interfaces 7. Application information The device is designed to provide high-level ESD protection for , the signal lines to unlimited current sources like, for example, a battery. A basic application
NXP Semiconductors
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DFN2510 DFN2510A-10

shockley diode application

Abstract: Automotive qualified ESD protection ) interfaces against ElectroStatic Discharge (ESD). The device includes four high-level ESD protection diode , plastic package. All signal lines are protected by a special diode configuration offering ultra low line , channel and ground pins 3 and 8 are implemented as Shockley diodes. XS ON 1.2 Features and , Semiconductors IP4294CZ10-TBR ESD protection for ultra high-speed interfaces 7. Application information , unlimited current sources like for example, a battery. A basic application diagram for the ESD protection of
NXP Semiconductors
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Automotive qualified ESD protection shockley diode applications
Abstract: characteristics after a 934 hour repetitive avalanche stress test. Long-term operation of the Gate-Source diode , blocking characteristics of the SJT before and after the application of the avalanche mode pulses , same charge passing through a SiC PiN diode as a DC or pulsed current causes fundamentally different , Open-Drain operation: In this work, long-term (15.8 hour) pulsed testing of the Gate-Source diode of a SiC , . Operation of the Gate-Source diode alone did not result in any change to the output characteristics GeneSiC Semiconductor
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igbt spice model

Abstract: MOSFET IGBT THEORY AND APPLICATIONS Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual , ) and the MOSFET from parts of their application areas. The current rating of a single IGBT chip , power capabilities the IGBT enters the application range of the GTO (gate turn off thyristor), offering , the power semiconductor devices (IGBT and free wheeling diode). Therefore the device has to dissipate , electro-thermal models are mandatory which take into account self-heating correctly. Application Note AN_PSM2e
Siemens
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igbt spice model MOSFET IGBT THEORY AND APPLICATIONS GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber D-81739 D-85577
Abstract: characteristics after a 934-h repetitive avalanche stress test. Long-term operation of the baseâ'"emitter diode , the BJT before and after the application of the avalanchemode pulses. In a separate experiment , was reported in [11] that the same charge passing through a SiC PiN diode as a dc or pulsed current , current of 250 mA. In this paper, long-term (8 h) pulsed testing of the baseâ'" emitter diode of a SiC , diode shows a marked increase in the subthreshold region, indicating an increase to the recombination GeneSiC Semiconductor
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MIL-STD-806

Abstract: tc5000 ; Input protection diode KD7 -O OUT R ; Input protection resistor R HfH ÎÎD5 2ÎD6 D 3,Di,; Parasitic diode formed by P-channel MOS FET D 5,D6 ; Parasitic diode formed by N-channel MOS FET D7 ; Parasitic diode formed by P-wel1 Fig. 2-4 CMOS Inverter taking Parasitic Circuits into , basically approximated by Shockley's equation. IDS = Id s = IDS = K [2Vd s (Vg s - VT ) K (VGS - VT , VALUE THEORETICAL VALUE BY SHOCKLEY' S EQUATION 0 2 4 6 V IN (V) 6 INPUT VOLTAGE
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MIL-STD-806 tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic

NE800296

Abstract: diode deg avalanche zo 150 63 California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor , in high frequency performance. A GUNN diode made of silicon would be inconceivable, so the appearance of the contemporary GaAs FET contributed greatly to developing and commercializing the GUNN diode , electrical charge will pass through diode D1, and return quickly to the power source side, thus the FET can
California Eastern Laboratories
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NE800898-7H NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph NE868898-6 MW77-21 MTT-22 ED-21

NE800296

Abstract: NE800196 California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor , in high frequency performance. A GUNN diode made of silicon would be inconceivable, so the appearance of the contemporary GaAs FET contributed greatly to developing and commercializing the GUNN diode , OFF, the electrical charge will pass through diode D1, and return quickly to the power source side
California Eastern Laboratories
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NE800196 NE24406 NE868199 NE800495-4 NE8001 ne800495-6

TC4069 OSCILLATOR

Abstract: TC40HXXX 2 ; Input protection diode R ; Input protection resistor o 4 - wv- R D 3 ,Di,; Parasitic diode formed by P-channel MOS FET D 5 ,D6 ; Parasitic diode formed by N-channel MOS FET Ü7 3ÌD5 3ÎD6 ; Parasitic diode formed by P-well Fig. 2-4 CMOS Inverter taking Parasitic Circuits , N-channel MOS FETs can be basically approximated by Shockley's equation. Ids = K Id s [2VD S (VGS - v , voltage than this vlaue is given in the condition of Vgg -^dd» the parasitic diode D 7 shown in Fig. 2-4
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TC40HXXX tc4011bp applications cmos integrated circuits MC14500B Industrial Control Unit TC4069 equivalent

axial zener diodes marking code c3v6

Abstract: ZENER DIODES CODE ID CHART ) 419SE (SN 74198N) 4199S (SN 74199N) 1.90 H h 4- 3.22 2-44 Prices on application , PRICES FOR LARGER QUANTITIES ON APPLICATION SEMI CONDUCTOR PRICE LIST DIODES, ZENER DIODES , QUANTITIES ON APPLICATION SEMI CONDUCTOR PRICE LIST LOW POWER TRANSISTORS DEVICE TYPE 1 , APPLICATION SEMI CONDUCTOR POWER 1 DEVICE TYPE 24 25 - 1-63 1-63 99 £0,72
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axial zener diodes marking code c3v6 ZENER DIODES CODE ID CHART H 48 zener diode diode zener ph c5v6 SESCOSEM semiconductor diode zener BZX 61 C 10 BR705A BR71A BR72A BR74A BR76A BR78A

shockley diode application

Abstract: 1Q 2004 Analog Applications Journal Instruments Application Report SLAA164 presented a basic method of interfacing the ADS8361 to the , application report and to explore 2- and 4-channel operation of the ADS8361 with two multichannel buffered , , overvoltage protection, and evaluating load disconnects. Interface Estimating available application power , Power-over-Ethernet standard is gaining wide industry acceptance. The application designer is faced with a need both to simplify power delivery to the application and to limit how much power is available to the
Texas Instruments
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1Q 2004 Analog Applications Journal 1Q 2004 Issue Analog Applications Journal C6711 DSP kit An audio circuit collection, Part 2 IES2 Mancini A111103 TMS320 TMS320C6711 SLYT053

74xx76

Abstract: 74XX174 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3-5 3.2.1 Photo Diode Application . . . , ) IN ANY APPLICATION, INCLUDING THE ABOVE, RELIABILITY OF OPERATION OF THE SOFTWARE PRODUCTS CAN BE , DEVELOPMENT SOFTWARE USED TO DEVELOP AN APPLICATION, INSTALLATION ERRORS, SOFTWARE AND HARDWARE COMPATIBILITY , â'SYSTEM FAILURESâ'). ANY APPLICATION WHERE A SYSTEM FAILURE WOULD CREATE A RISK OF HARM TO PROPERTY OR , APPLICATION DESIGNER MUST TAKE REASONABLY PRUDENT STEPS TO PROTECT AGAINST SYSTEM FAILURES, INCLUDING BUT NOT
National Instruments
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74xx76 74XX174 74xx161 TDA 7247 74XX32 BA 658 Bar-Graph Display Driver

JD 1803

Abstract: philips diode PH 33D 4 Schottky Diode and Passive Components 93 Tzu-hung Chen 4.1 Introduction 93 4.2 Schottky Diode , 4.2.2 Diode Model 99 4.2.3 Diode Characterization and Modeling 102 4.2.3.1 DC I-V Measurement 102 , Current Mirrors 156 5.6 Voltage Level-Shift Networks 158 5.6.1 Schottky Barrier Diode Stacks 158 5.6.2 Diode Level-Shift Circuits 159 5.7 Output-Buffer Stages 160 5.7.1 Common-Source FET 160 xviii CONTENTS , 8.2.3.1 Principle of Operation 312 8.2.3.2 Multivibrator Oscillator 313 8.2.3.3 Application Examples 317
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JD 1803 philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC
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