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samsung 470 uf 50v

Catalog Datasheet MFG & Type PDF Document Tags

samsung CL21

Abstract: CL21 105 j 120 = 12 pF 471 = 470 pF 102 = 1,000 pF 273 = 0.027 µF 474 = 0.47 µF 105 = 1.0 µF B = ± 0.10 , 471 = 470 pF 102 = 1,000 pF 273 = 0.027 µF 474 = 0.47 µF 105 = 1.0 µF K V A T , . R = decimal 1R0 = 1.0 pF 120 = 12 pF 471 = 470 pF 102 = 1,000 pF 273 = 0.027 µF 474 = 0.47 , = decimal 1R0 = 1.0 pF 120 = 12 pF 471 = 470 pF 102 = 1,000 pF 273 = 0.027 µF 474 = 0.47 , 12 pF 471 = 470 pF 102 = 1,000 pF 273 = 0.027 µF 474 = 0.47 µF 105 = 1.0 µF B = ± 0.10 pF
Venkel
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CL21 105 j

Abstract: samsung CL21 pF 120 = 12 pF 471 = 470 pF 102 = 1,000 pF 273 = .027 µF 474 = 0.47 µF 105 = 1.0 µF X7R K , number of zeros, R=decimal 1R0 = 1.0 pF 120 = 12 pF 471 = 470 pF 102 = 1,000 pF 273 = .027 µF 474 , , R=decimal 1R0 = 1.0 pF 120 = 12 pF 471 = 470 pF 102 = 1,000 pF 273 = .027 µF 474 = 0.47 µF 105 = , 12 pF 471 = 470 pF 102 = 1,000 pF 273 = .027 µF 474 = 0.47 µF 105 = 1.0 µF K 50 , zeros, R=decimal 1R0 = 1.0 pF 120 = 12 pF 471 = 470 pF 102 = 1,000 pF 273 = .027 µF 474 = 0.47 µF
Novacap
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capacitor 6800 uf 63v

Abstract: H63A 22000 - - 50V - 2.2~ 10 2.2~ 100 10~ 68 82~ 150 180~ 470 10~ 470 , ) (4) (5) (6) (7) (8) (1) SAMSUNG Multilayer Ceramic Chip Capacitor (2) Type(Size) (3 , S2H -330 ± 60 S T T2H -470 ± 60 T U U2J -750 ± 120 U L S2L , Rated Voltage(Vdc) Q 6.3V P 10V O 16V A 25V B 50V C 100V , ±0.2 50V C A P A C I T A N C E R A N G E p F 1.0 ±0.05 T - 0.5 ~ 240
Samsung Electro-Mechanics
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capacitor 4700 uF 50V

Abstract: capacitor 4700 uf 25v ) (2) (3) (4) (5) K (6) B (7) N E (8) (9) (1) Samsung Multilayer , RATED VOLTAGE Symble Rated Voltage(Vdc) O 16V A 25V B 50V C 100V , Voltage(DC) Capacitance(pF) CH 50V X7R 16V 25V Y5V 50V 10 15 22 33 47 68 100 150 220 330 470 680 1000 1500 3300 4700 10000 22000 47000 100000 150000 Please contact us for special capacitance and high voltage(100V) 16V 25V 50V Multilayer Chip Capacitors ­ Array
Samsung Electro-Mechanics
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1uF 50V X7R samsung 1608

Abstract: MLCC CRACK C 11 1 Samsung Multilayer Ceramic Capacitor 2 Size(mm) 3 Capacitance Temperature Characteristic 4 Nominal Capacitance 5 Capacitance Tolerance 6 Rated Voltage 1 Samsung Multilayer Ceramic , Thickness Option 8 Product & Plating Method 9 Samsung Control Code 108Reserved For Future Use , -220± 60 -330± 60 -470± 60 -750± 60 +350 ~ -1000 ±15% ±15% ±22% +22 ~ -82% -55 ~ +85 -55 ~ +125 -55 , Rated Voltage 4.0V 6.3V 10V 16V 25V 35V 50V 100V Code D E G H I J K Rated Voltage 200V 250V 500V
Samsung Electronics
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Abstract: ) (6) (7) (8) (1) SAMSUNG Multilayer Ceramic Chip Capacitor (2) Type(Size) (3) Capacitance , /- 60 S T T2H -470 +/- 60 T U U2J -750 +/- 120 U L S2L +350 , Symble Rated Voltage(Vdc) Q 6.3V P 10V O 16V A 25V B 50V C 100V , 470 0000 22 00000 33 00000 10000 000 - - - - 220 00000 - B 1 6V 2 , 22000 0 47000 0 680 000 100 0000 2 20000 0 220 0000 470 0000 - 68 00000 10000 Samsung Electronics
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date code mlcc samsung

Abstract: Samsung MLCC Capacitor â'¢ Discription : Cap, 22nF, 50V, ±20%, X7R, 0603 A. Samsung Part Number CL â'  â , (1/2) SPECIFICATION â'¢ Supplier : Samsung electro-mechanics â'¢ Part Number , ±20%, X5R, 0603 A. Samsung Part Number CL â'  â'  Series â'¡ Size â'¢ Dielectric â'£ Capacitance â , '¥ 6 â'¦ N â'§ X â'¨ Samsung Multi-layer Ceramic Capacitor 0603 (inch code) L: 1.6 ±0.1mm X5R 1 uF ±20 % 10 V 0.6 ±0.1 mm N â'© C â'ª W: 0.8 ±0.1 mm Ni Cu Sn 100% â
Samsung Electro-Mechanics
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CL21 105 j

Abstract: Yageo Ceramic multilayer X7R cc1206 200v Drawing Electrical Characteristics Capacitance Range: 0.5 pF to 0.12 µF Temperature Coeffiecent , 220 270 330 390 470 560 680 Cap. pF 8.2 10 12 15 18 22 27 33 39 47 56 68 Cap , 220 270 330 390 470 560 680 A M E R I C A N 1 ATC North America 631-622-4700 · , limit for NPO is .12 µF Cap. Code 822 Cap. Code 103 123 153 183 223 273 333 393 473 Cap. pF 8200 . Cap. µF .010 .012 .015 .018 .022 .027 .033 .039 .047 Cap. Code 563
American Technical Ceramics
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Abstract: Drawing Electrical Characteristics Capacitance Range: 0.5 pF to 0.12 µF Temperature Coeffiecent , 8R2 100 120 150 180 220 270 330 390 470 560 680 Cap. pF 8.2 10 12 15 18 22 27 , . pF 82 100 120 150 180 220 270 330 390 470 560 680 A M E R I C A N 1 ATC North , 6800 Note: Upper capacitance value limit for NPO is .12 µF Cap. Code 822 Cap. Code 103 123 153 183 223 273 333 393 473 Cap. pF 8200 . Cap. µF .010 .012 .015 .018 .022 .027 American Technical Ceramics
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1uF 50V X7R samsung 1608

Abstract: 100nf Capacitor 0201 10 C 11 1 Samsung Multilayer Ceramic Capacitor 7 Thickness Option 2 Size(mm) 3 Capacitance Temperature Characteristic 8 Product & Plating Method 9 Samsung Control Code , Use 118 Packaging Type 1 Samsung Multilayer Ceramic Capacitor 2 SIZE(mm) Code EIA CODE , J 2,000V B 50V K 3,000V C 100V General Capacitors 6 RATED VOLTAGE 7 , Type A Pd Ag Sn_100% N Ni Cu Sn_100% G Cu Cu Sn_100% 9 SAMSUNG
Samsung Electro-Mechanics
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c1674

Abstract: murata filter 10.7ma C SW2 B 1SV10 0 2 SW1 3 23 T 2 0.022 µF C-F 450B 15pF 4 21 51pF 50 0.022µF 0.033 µF 0.01µF 5 20 1k 19 330pF 18 VCO 7 8 , 0.01 µF MPX IN 0.01 µF 14 C-F CSB456F1 8 12k 15 AM FM 16 0.082 µF 22k ON B 0.068 µF 17 OFF A 0.022 µF 4.7µF 6 S1A2298A01 6800pF SW7 24k 0.022 µF C-F 10.7MAS L 2.2mH * 10.7MHz 100 µF 0.082 µF 0.01µF SW6 STOP 390 SW8 100k
Samsung Electronics
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KV1236Z KV1310NT c1674 murata filter 10.7ma tuner kwang sung c1674 transistor datasheet KV1236 24-SDIP-300 S1A2298A01-A0B0 7MG65-A CFB456F

ASM1442

Abstract: bd82hm55 EXCEPT AS AUTHORIZED BY SAMSUNG. SAMSUNG PROPRIETARY 4 3 2 1 4x 470 uF : CPU VR side , THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. SAMSUNG , without Samsung's authorization - 8. Block Diagram and Schematic B Design CHECK APPROVAL , DEV. STEP 10/14/2009 SK Park MP BREMEN-15C/17C SAMSUNG Signature : 3 MAIN ELECTRONICS
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ASM1442 bd82hm55 SMSC mec1308 mec1308 Intel hm55 HM55 CRB BA41- ALC269Q-GR 88E8040 AU6336 MEC1308-NU

CC0805 yageo

Abstract: CL21 105 j Dimension Drawing Electrical Characteristics Capacitance Range: 0.5 pF to 0.12 µF Temperature , Cap. Code 8R2 100 120 150 180 220 270 330 390 470 560 680 Cap. pF 8.2 10 12 15 , 681 Cap. pF 82 100 120 150 180 220 270 330 390 470 560 680 A M E R I C A N 1 , 3900 4700 5600 6800 Note: Upper capacitance value limit for NPO is .12 µF Cap. Code 822 Cap. Code 103 123 153 183 223 273 333 393 473 Cap. pF 8200 . Cap. µF .010 .012 .015
American Technical Ceramics
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CC0805 yageo CL21 105 j yageo CC0603 x5r SAMSUNG 0805 npo CC0603 yageo Samsung CL05 Ceramic Capacitors C2225

0603WAJ0103T5E

Abstract: CL10B474K08NNNC www.rutronik.com 0603, 22pF, 50V, 5%, NPO Rutronik AG EUR KKK14323 0.0016 CL10C220VB8NNND Kond. 0603 22pF 0 1 202214 Kondensator SMD 33pF 0603,33pF, 50V, 10%, 06 C204 C212,C213,C220 NPO case: 4 .00 www.rutronik.com Rutronik AG EUR Samsung / 0.0013 KKK14350 CL10C330JB8NNNC C7867 33pF 060 0 1 202208 Kondensator SMD 47pF 06 C239 case: www. 1.00 0603,47pF, 50V, 10%, NPO Swissdis AG 0 1 202210 US 0.0018 C1608NP0470JGT Kond. SMD 0603 47pF 10% 06 C140 C142 www. 2.00 Kondensator SMD lOOpF 0603,lOOpF,50V, 5%, Swissdis AG
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OCR Scan
C1608NP0101JGT 0603WAJ0103T5E CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 SLSLLI33 SL-S-D-12 CH-4542 811060-VO 811060-V0 MSEBX800

BA41-01190A

Abstract: mec1308 AK35 AK33 AK34 AL35 AL33 AM33 AM35 AM34 0 1 2 3 4 5 6 CPU1_VID(6:0) 1.1V 6x 470 uF : CPU VR , 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D D SuZhou CPU :Intel Arrandale Chip Set :Intel Ibex Peak , (57) C B A A Owner : SEC Mobile R & D Signature : SAMSUNG ELECTRONICS 4 1
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BA41-01190A K4W1G1646E-HC12 tps51621 marvell 88E8059 samsung crt AU6336C52

samsung r580

Abstract: BA41-01174A AUTHORIZED BY SAMSUNG. SAMSUNG PROPRIETARY 4 2 3 1 4x 470 uF : CPU VR side C782 10000nF , THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. SAMSUNG , can not be used without Samsung's authorization - 8. Block Diagram and Schematic B Design , R580/R780 BREMEN-M SAMSUNG 8-1 THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION
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BA41-01174A 88E8059 SOM4013SL-G443-C1033 samsung r580 TPS51125 tps51125 SCHEMATIC smd diode code MK a8 N11P/ MT503 MT500

D105

Abstract: LA 1265 V DD 0.1 µF INH V LCD V SS From controller CE CK DI KS0035 Samsung Electronics , 51 S35 -965 565 S4 965 -595 52 S36 -965 440 S5 965 -470 53 , Conditions VDD=5.0V Min 0.25 Typ - Max - tWCKL VDD=5.0V 0.25 - - Data Set-up Time tSU VDD=5.0V 0.25 - - Data Hold Time tDH VDD=5.0V 0.25 - - t1 VDD=5.0V, at CE rising t11 VDD=5.0V, at CE rising 1.0 - - t12 VDD=5.0V, at DI
Samsung Electronics
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D105 LA 1265 S44 S46 CK610 KS003 capacitor D105
Abstract: ● N 9 ● N 10 ● C 11 ● 1 ● Samsung Multilayer Ceramic Capacitor 7 â , Plating Method 9 ● Samsung Control Code 4 ● Nominal Capacitance 5 ● Capacitance Tolerance 6 ● Rated Voltage 108 ● Reserved For Future Use 118 ● Packaging Type 1 ● Samsung , 500V O 16V H 630V A 25V I 1,000V L 35V J 2,000V B 50V K , Sn_100% N Ni Cu Sn_100% G Cu Cu Sn_100% 9 ● SAMSUNG CONTROL CODE Code Samsung Electro-Mechanics
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RTL8103

Abstract: RAS 0510 SUN HOLD EXCEPT AS AUTHORIZED BY SAMSUNG. POWER RAILS ANALYSIS Rev. 0.6 (060920) D D 220V 5.0V , 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Suzhou_L CPU : Intel Penryn Chip Set : Intel Cantiga & ICH9M Remarks , u a s i t m n a e S fid n o C SAMSUNG ELECTRONICS C B A A 4 3 2 1 4
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BA41-01170A RTL8103 RAS 0510 SUN HOLD N11M-GE1-B-A3 tps51620 88E8040-A0-NNB2C000 samsung lcd tv 42 inches power supply circuit dia BA41-01171A BA41-XXXXXA CK-505 ALC269 SW500

KS0035

Abstract: D105 µF INH V LCD V SS From controller CE CK DI KS0035 Samsung Electronics , -720 51 S35 -965 565 S4 965 -595 52 S36 -965 440 S5 965 -470 , Conditions VDD=5.0V Min 0.25 Typ - Max - tWCKL VDD=5.0V 0.25 - - Data Set-up Time tSU VDD=5.0V 0.25 - - Data Hold Time tDH VDD=5.0V 0.25 - - t1 VDD=5.0V, at CE rising t11 VDD=5.0V, at CE rising 1.0 - - t12 VDD=5.0V, at DI
Samsung Electronics
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1265 MARK T11 AD 7 segment digital clock circuit AD S35 D49 ANALOG
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