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rgk 20/2

Catalog Datasheet Results Type PDF Document Tags
Abstract: *200 38.5 27.5 87 150 20,8 16,8 42*3 >10J , ] einseitig geerdet erdfrei * 1 Schlie遝r, Typ RGK 20/1; E.GK 30/1; RGK 66/1 * 4 Schlie遝r, Typ UGK 66/4 4; 6 , ; 18 . 24 �25* �35* 110 220 - 0,2 0,75 10 10� 10� ^ 1 ,2 SO,3 ^ 0 ,8 150 46,5 13*/17* 13,5 RGK 66 12; 48; 60 �35* �4* �7* 110 220 - 0,2 3 20 10* 10* , Vergleichstabelle verschiedener Relaistypen und -arten Typ Schutzgaskontaktrelais 11GK 20 ... OCR Scan
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2 pages,
28.29 Kb

rgk 66 rgk 20 datasheet abstract
datasheet frame
Abstract: 2.3.2. 2.3.3. 2.3.4. RGK 20 Relais RGK 20/1 ; RGK 20/2 Relais RGK 20/1 ; RGK 20/2 R elais RGK 20/1 ; RGK 20/2 R elais RGK 20/1 ; RGK 20/2 RGK 30 R elais RGK 30/1 ; RGK 30/2 R elais RGK 30/1 ; RGK 3 0 '2 R elais RGK 30/1 ; RGK 30/2 R elais RGK 30/1 ; RGK 30'2 RGK 66 Relais RGK 66/1 ; RGK 66/2 R elais RGK 66/1 ; RGK 66/2 Relais RGK 66/1 ; RGK 66/2 Relais RGK 66/1 ; RGK 66/2 TECHNISCHE INFORMATION , 2 4 6 12 18 24 40 60 W ic k lu n g sw id e rsta n d bei 20 °C n 12+ 42 + 90 + 370 + 600 + 960 + 3600 ... OCR Scan
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18 pages,
8042.04 Kb

deutschen demokratischen Deutschen Demokratischen Republik GSW 3.0 relais gbr 35 TZE 3013 elektronik DDR gbr relais rgk 20 datasheet abstract
datasheet frame
Abstract: 2 anode 3 gate KAG Absolute maximum ratings(Ta=25) VDRM PARAMETER Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage SYMBOL 400 MIN (note:RGK=1k) UNIT V 400 (note:RGK=1k) V IT(AV) On-state current ITSM Surge non-repetitive on-state current PGM Peak gate power dissipation PG(AV) IFGM VRGM 2(Tc=77,=180 Single phase(1/2wave) A 20 A 0.1 W Peak gate reverse voltage SYMBOL Junction ... Original
datasheet

1 pages,
105.16 Kb

data sheet of 2p4m thyristor k 202 TO202 package 2P4M DATA SHEET 2P4M datasheet 2P4M 2p4m equivalent thyristor 2P4M datasheet abstract
datasheet frame
Abstract: (Ta > 25) = IT / -2.0 mA / ITP 3 A ITSM 2 A VGM 5 V , H Ta IFTTa 2.0 10 RGK = 27k LED I FT (mA) 1.0 IH(mA) 5 3 VAK = 6V RGK = 27k RL = 100 SPL B 0.5 SPL A 1 -40 -20 0 20 40 60 80 60 80 , V, RGK = 27 k, Ta = 25 (IFT7) 7 T7 10 T7, 1: : TLP148G TLP148G , ) IF 50 mA IF / -0.7 mA / IFP 1 A VR 5 V (RGK = 27 k ... Original
datasheet

6 pages,
359.16 Kb

E67349 rgk 20/2 rgk 13 TLP148G TLP148G abstract
datasheet frame
Abstract: (-) a ru CTH640 CTH640 600 4 1.2 .5 200 1.8 4 1.05 150 10 2 12 20 30 3 50 tr ru (Triac) ru nr CSH640 CSH640 (SCR) 600 4 2.5 8 10 1.2 .5 200 2.2 4 1.05 150 .015 .2 .8 7 5 6 , Otherwise Specified) LP UJ 111 DEVICE VDRU RGK= IT(RMS) IT(»V) VGRM 0 ISR IGM tOuSmax PS(AV) 20mSmax I0RM 0 RGK=1K0hms VT 1 IT VT[T0) rT IGT 0 VD VGT 0 VD VÛ IH 0 RGK=1K Ohms IL 0 RGK =1K Ohms ai/dt K3=10mA, VD=.67xVDRM, tgd « IG iq VD=67xVDRM, J] IKOhms RGK=1K VFU35V VFU35V, -e ... OCR Scan
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1 pages,
41.03 Kb

SCR 25a CTH640 CSH640 CSA408 1k ohms CTH6 LP 1610 datasheet abstract
datasheet frame
Abstract: (Ta > 25) = IT / -2.0 mA / ITP 3 A ITSM 2 A VGM 5 V , IF (mA) 0.8 VFP (V) 4 2009-10-20 TLP548J TLP548J I H Ta IFTTa 2.0 RGK = 27k , mA IF / -0.7 mA / IFP 1 A VR 5 V (RGK = 27 k) VDRM 600 V (RGK = 27 k) VRRM 600 V (Ta > 53) = , -25 85 RGK 27 33 k ... Original
datasheet

6 pages,
395.86 Kb

TLP548J tlp548 E67349 rgk 20/2 rgk 13 TLP548J abstract
datasheet frame
Abstract: (RGK = 27 k) VDRM 600 V (RGK = 27 k) VRRM 600 V , ) IT (RMS) 150 mA (Ta > 25) = IT / -2.0 mA / ITP 3 A ITSM 2 A VGM 5 V (100 s 120 pps) 1 , -25 85 RGK 27 33 k CGK 0.01 0.1 F 2: 2 2009-10-20 TLP549J TLP549J (Ta = 25 ... Original
datasheet

6 pages,
341.11 Kb

E67349 rgk 20/2 TLP549J rgk 13 tlp549 TLP549J abstract
datasheet frame
Abstract: 200 1.8 4 1.05 150 10 2 12 20 30 3 50 or (Triac) 1 u ru CSH640 CSH640 600 4 2.5 8 10 1.2 .5 200 2.2 4 1.05 150 .015 .2 .8 7 5 6 50 30 ? 10 50 -r (SCR , Characteristics (Ta=25°C, Unless Otherwise Specified) LP UJ 111 DEVICE VDRM RGK= IT(RMS) IT(AV) VGBM 0 IGR IQU lOuSmax PS(AV) 20mSmax IDRM 0 RGK=1K0hms VT 0 IT VT[TO) rT IGT • VD VGT a VD VD IH • RGK=1K0tims IL « RGK =1K Ohms ai/dt K3=10mA, dv/dl VD=.67xVDRM, tgd a IG M VD=67xVDRM, IKOhms ... OCR Scan
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1 pages,
82.8 Kb

CTH640 CSH640 CSA408 datasheet abstract
datasheet frame
Abstract: Current IT(RMS) 4.0 Peak One Cycle Surge (60Hz) ITSM 20 I2t Value for Fusing (t>1.5ms) I2t 0.5 Peak Gate , CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0K IDRM, IRRM Rated VDRM, VRRM, RGK=1.0K, TC=110°C VTM IFM=4.0A IGT VAK=6.0V, RL=100, RGK=1.0K IGT VAK=6.0V, RL=100, RGK=1.0K, TC=-40°C VGT VAK=6.0V, RL=100, RGK=1.0K 0.4 0.5 VGT VAK=6.0V, RL=100, RGK=1.0K, TC=-40°C VGT VAK=Rated VDRM, RL=3.0K, RGK=1.0K, TC=110°C 0.2 IHX VD=12V, RGK=1.0K 0.3 IHX VD=12V, RGK ... Original
datasheet

2 pages,
416.65 Kb

TO202 C106M1 C106C1 c106b1 C106 C106D1 C106A1 C106B1 C106E1 C106A1 abstract
datasheet frame
Abstract: 2009-10-20 TLP748J TLP748J I H Ta IFTTa 20 2.0 1.0 IH(mA) LED I FT (mA) RGK = 27k 10 9 8 7 6 5 SPL B 0.5 SPL A VAK = 6V RGK = 27k RL = 100 4 3 -40 -20 0 20 , ) VRRM 600 V IT (RMS) 150 mA (Ta25) IT / -2.0 mA / ITP 3 A ITSM 2 A VGM 5 V ( T a 5 3 ) (100 s , Topr -25 85 RGK 10 27 k ... Original
datasheet

6 pages,
329.6 Kb

tlp748 rgk 13 EN60747-5-2 EN60065 E67349 rgk 20/2 TLP748J TLP748J abstract
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1E+1 1E+0 1E-1 1E-2 1E-1 1E+0 1E+1 Rgk(k ) W dV/dt[Cgk]/dV/dt[Rgk=1k ] W Cgk(nF) 20 5 C ITSM I 2 t tp(ms) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1E-2 1E-1 1E+0 1E+1 ITM(A fusing tp = 10ms Tj = 255C 0.25 A 2 S dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr 3 100 ns F = 60 Hz Tj = 1255C 1255C 1255C 1255C 50 A/ms I GM Peak gate current tp = 20 ms Tj = 1255C 1255C 1255C 1255C 1 A P G(AV) Average gate power dissipation Tj = 1255C 1255C 1255C 1255C 0.1 W T stg Tj
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6630-v1.htm
STMicroelectronics 11/12/2000 8.39 Kb HTM 6630-v1.htm
1 2 3 4 5 6 IGT , IH, IL[Tj] / IGT , IH, IL[Tj = 25 5 C] IH & IL (Rgk = 1k W ) IGT Tj( 5 C) IH[Rgk] / IH[Rgk = 1k ] W Rgk(k W) 20 18 16 14 12 10 8 6 4 2 0 t I t Value for fusing tp = 10 ms Tj = 255C 0.18 A 2 S dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr 3 100ns F = 60 Hz Tj = 1255C 1255C 1255C 1255C 50 A/ms I GM Peak gate current tp = 20 ms Tj = 1255C 1255C 1255C 1255C 0.5 A P G(AV) Average gate power dissipation Tj = 1255C 1255C 1255C 1255C
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7481.htm
STMicroelectronics 11/12/2000 8.6 Kb HTM 7481.htm
values). 1 2 5 10 1 2 5 10 20 Tj=1255C 1255C 1255C 1255C Rgk=1k W dV/dt[Cgk] / dV/dt [ Rgk=1k W] VD=0.67xVDRM 1E+2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IH[Rgk] / IH[Rgk=1k W] Tj=255C Rgk(k W) Fig. 6 value of I 2 t. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1E-2 1E-1 1E+0 1E+1 ITM(A) Tj max.: Vto=0.83V C ) tp = 8.3 ms 10 A tp = 10 ms 9 I 2 t I 2 t Value for fusing tp = 10 ms 0.5 A 2 s dI/dt /5 P G (AV) = 0.1W P GM = 2W (tp = 20 m s) I GM = 1A (tp = 20 m s) GATE
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6630.htm
STMicroelectronics 20/10/2000 9.3 Kb HTM 6630.htm
(typical values). 1 2 5 10 1 2 5 10 20 Tj=1255C 1255C 1255C 1255C Rgk=1k W dV/dt[Cgk] / dV/dt [ Rgk=1k W] VD=0.67xVDRM temperature. X00602MA X00602MA X00602MA X00602MA 3/5 1E-2 1E-1 1E+0 1E+1 1E+2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IH[Rgk] / IH[Rgk=1k W for a sinusoidal pulse with width : tp 3 10ms, and corresponding value of I 2 t. 0.5 1.0 1.5 2.0 2.5 ) tp = 8.3 ms 10 A tp = 10 ms 9 I 2 t I 2 t Value for fusing tp = 10 ms 0.5 A 2 s dI/dt Critical rate (Plastic) K A G A K G 1/5 P G (AV) = 0.1W P GM = 2W (tp = 20 m s) I GM = 1A (tp = 20 m s
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6630-v2.htm
STMicroelectronics 14/06/1999 6.9 Kb HTM 6630-v2.htm
) 1E-2 1E-1 1E+0 1E+1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IH[Rgk] / IH[Rgk = 1 k W ] Tj = 25 5 C Rgk(k W ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 Tj = 125 5 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 Cgk(nF 1E+0 1E-1 2.0 2.5 3.0 3.5 4.0 4.5 1.5 1.0 0.5 Rth(j-a) (5C/W) S(cm ) 2 4.0 4.5 5.0 3.5 3.0 ms Tj = 255C 2.5 A 2 S dI/dt Critical rate of rise of on-state current I G = 2 x I
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7480.htm
STMicroelectronics 11/12/2000 10.02 Kb HTM 7480.htm
corresponding value of I t. IGT, IH, IL[Tj] / IGT,IH, IL[T] = 255C 6 5 4 3 2 1 0 0 -20 -40 20 40 60 80 100 120 140 Tj(5C) IH[Rgk]/IH[Rgk=1k ] W Rgk(k W) 0 . 4 0 . 6 0 . 8 1 . 0 0 . 2 1 . 6 1 . 8 2 . 0 1 . 2 1 . 4 dV/dt[Rgk] / dV/dt[Rgk=1k ] W Rgk(k W) 0 0.1 1.0 10.0 dV/dt[Cgk] / dV/dt[Rgk=1k ] W 2 1 0 3 4 5 6 7 0 2 4 6 8 10 Cgk(nF) 1 10 100 1000 2.0 2.5 3.0 3.5 4.0 4.5 1E+1 1E+0 1E-1 1E-2 VTM(V) Rth(j-a) (5C/W) S (cm ) 2 0.0 0.5
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7482.htm
STMicroelectronics 11/12/2000 10.01 Kb HTM 7482.htm
Rgk(k W) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.10 1.00 10.00 Tj=1255C 1255C 1255C 1255C VD=0.67xVDRM dV/dt[Rgk] / dV/dt [Rgk = 220 ] W Rgk( W ) 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 5 C VTM(V) 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 Rth(j-a) ( 5 C/W) S(cm 4.5 A 2 S dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr 3 100 ns F = 60 Hz Tj = 1255C 1255C 1255C 1255C 50 A/ms I GM Peak gate current tp = 20 ms Tj = 1255C 1255C 1255C 1255C 1.2 A P G
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5203-v3.htm
STMicroelectronics 07/12/2000 10.56 Kb HTM 5203-v3.htm
OFF RF 6 4 600K RR 1 4 400K RGK 6 5 112 RG 2 6 4.61 RK 3 5 8.13M DF 6 4 RR 1 4 4MEG RGK 6 5 240 RG 2 6 4.05 RK 3 5 0.15 DF 6 4 ZF DR 1 4 ZR DGK 8MEG RGK 6 5 240 RG 2 6 4.05 RK 3 5 0.15 DF 6 4 ZF DR 1 4 ZR DGK 6 5 ZGK 6 4 1 POUT OFF QN 4 6 5 NOUT OFF RF 6 4 40MEG 40MEG 40MEG 40MEG RR 1 4 26.7MEG RGK 6 5 240 RG 2 6 POUT OFF QN 4 6 5 NOUT OFF RF 6 4 10MEG 10MEG 10MEG 10MEG RR 1 4 6.67MEG 67MEG 67MEG 67MEG RGK 6 5 300 RG 2 6 25 RK
www.datasheetarchive.com/files/spicemodels/misc/models/mcetriac.lib
Spice Models 17/09/2010 12.49 Kb LIB mcetriac.lib
MODE: Blank:Tube -TR: D PAK & DPAK Tape & Reel 2 TS 12 20 - 600 B (-TR 1.8 2.0 IGT ,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 5 C] IGT IH & IL Rgk = 1k W Tj( 5 C) -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IH[Rgk] / IH[Rgk = 1k W ] Tj = 25 2.0 2.5 3.0 3.5 4.0 VD = 0.67 x VDRM Tj = 125 5 C Rgk = 220 W dV/dt[Cgk] / dV/dt [Rgk 1.2 Rgk(k ) W 0.01 0.10 1.00 10.00 10 100 1000 2000 ITSM(A),I 2 t(A 2 s
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7475.htm
STMicroelectronics 07/12/2000 13.91 Kb HTM 7475.htm
where low gate sensitivity is required. DESCRIPTION P01xxxA P G (AV) = 0.1 W P GM = 2 W (tp = 20 m s) I GM = 1 A (tp = 20 m s) GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit 8.3 ms 8 A tp = 10 ms 7 I 2 t I 2 t Value for fusing tp = 10 ms 0.24 A 2 s dI/dt Critical K W Tj= 125 5 C MAX 200 m s ELECTRICAL CHARACTERISTICS 2 /3 P01xxxA 3 /5 0 0.1 0.2 0.3 0.4 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 P (W) Ttab ( C) o Rth(j-a) Tamb ( C) o
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3407-v1.htm
STMicroelectronics 20/10/2000 8.74 Kb HTM 3407-v1.htm