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Part Manufacturer Description Datasheet BUY
CS2000P-DZZ Cirrus Logic Phase Locked Loop, Hybrid, PDSO10, 3 MM, LEAD FREE, MO-187, MSOP-10 visit Digikey
CS2300P-DZZR Cirrus Logic Phase Locked Loop, Hybrid, PDSO10, 3 MM, LEAD FREE, MO-187, MSOP-10 visit Digikey
CS2200CP-CZZ Cirrus Logic Phase Locked Loop, PDSO10, 3 MM, LEAD FREE, MO-187, MSOP-10 visit Digikey
CS2100CP-DZZR Cirrus Logic Phase Locked Loop, Hybrid, PDSO10, 3 MM, LEAD FREE, MO-187, MSOP-10 visit Digikey
CS2000P-CZZR Cirrus Logic Phase Locked Loop, Hybrid, PDSO10, 3 MM, LEAD FREE, MO-187, MSOP-10 visit Digikey
CS2000CP-CZZ Cirrus Logic Phase Locked Loop, Hybrid, PDSO10, 3 MM, LEAD FREE, MO-187, MSOP-10 visit Digikey

replacement+of+bel+187+transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TRANSISTOR MICA INSULATORS ke ye lco .com · RAPID HEAT DISSIPATION · HIGH DIELECTRIC , .166 .166 B .130 .140 C .187 .156 D .203 .203 B .187 .187 C .187 .187 D .187 .250 CAT. NO. 4662 CAT. NO. 4667 CAT. NO. 4674 CAT. NO. 4661 CAT. NO. 4658 CAT , TRANSISTOR CASES THREADED STUD CAT. NO. 4665 CAT. NO. 4666 PLASTIC CASE MICA INSULATORS .003 , .375 6 4680 .171 .500 8 4681 .187 .625 10 4682 .265 .750 1/4 4683 .328 .875 5/16 Keystone Electronics
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TRANSISTOR 187 transistor b 1655 transistor on 4673 D 1062 transistor on BE 187 TRANSISTOR BE 187 TRANSISTOR
Abstract: Ml\ .003 THICK MICA 4657 4659 A B C D 1.062 1.187 CAT. NO. .187 187 .187 .187 .187 .250 156 DIA (2) HOLES CAT. NO. 4665 CAT. NO. 4664 FOR TRANSISTOR , TRANSISTOR M ICA INSULATORS â'¢ RAPID HEAT DISSIPATION â'¢ HIGH DIELECTRIC STRENGTH â'¢ NON-TOXIC , D 4655 1.125 1.250 .130 .140 .187 .156 203 .203 4656 / / - .125 DIA (2 , Screw Size 4678 .120 .140 .171 .187 .265 .328 .375 .375 .500 .625 .750 .875 4 6 -
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Abstract: Preset Counters with Dual LED Display and Advanced Counter Functionality Model DPC-21 187 , Batch Counting Modes Provide Additional Functions ß Relay and Transistor Outputs Programmable for , , high >3.0 Outputs Number: One relay and one transistor per preset Relay(s): SPDT 5 A resistive @ 110 Vac Transistor: NPN open collector; 30 Vdc maximum, 100 mA maximum Physical Dimensions: 48 H , -23 Price $187 187 187 Description Single preset counter Dual preset counter Single preset counter Omega Engineering
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NEMA-4/IP65 DPC-20 DPC-22 DPC-23 DPC23 M-133
Abstract: 6-32 8-32 10-32 6-32 8-32 10-32 .187 .187 .187 .187 .187 .187 .187 .187 .187 .250 , D IA . TRANSISTOR MOUNTS, WAFERS & COVERS Female for No. 790-5005-6-3842 Single prong mounted , - czr =1 m J L -J L Transistor^ Type -.1 3 6 D IA . Concord No. 790-5020 790-5025 790-5030 , .O62" 1 1 2 -* "l L * - I -â'¢ - 1 y7Q^ Transistor Type TO-66 I ^ U - .1 8 7 , '"^ ^ p - .187 N Y L O N PRO TECTIVE COVERS SE-0 M A T E R IA L cfca -
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1032
Abstract: TRANSISTOR M ICA INSULATORS â'¢ RAPID HEAT DISSIPATION â'¢ HIGH DIELECTRIC STRENGTH â'¢ NON-TOXIC , 1.125 1.250 .130 .140 .187 .156 .203 .203 4656 râ'" CAT. NO. 4661 INSULATORS , 1.187 CAT. NO. .187 .187 .187 .187 .187 .250 1 00 66 DIA- (21HOLES 200 CAT. NO. 4665 CAT. NO. 4664 FOR TRANSISTOR CASES THREADED STUD PLASTIC CASE MICA INSULATORS , .120 .140 .171 .187 .265 .328 .375 .375 .500 .625 .750 .875 J For Screw Size 4 -
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Abstract: . Transistor is installed afterwards. Assembly and repairs are simplified since socket will stay in place without transistor mounted. Top molded boss or added bushing ensure the transistor leads will be isolated , Socket and transistor are assembled to chassis at same time, using the minimum amount of hardware. Top molded boss ensure the transistor leads will be isolated from the chassis. Various boss heights , TRANSISTOR SOCKETS & MOUNTING KITS VARIOUS MOLDED BOSS HEIGHTS MATERIAL: Base: Phenolic, Grade PBE, Type Keystone Electronics
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transistor p86 transistor d 4515 TRANSISTOR C 718 TRANSISTOR d 718 TRANSISTOR 718 Transistor 4733
Abstract: as the zener Z1 voltage level (+ VbeTR1) is reached a current pulse is generated through transistor , /turn ratio immediately drops to a much lower level. Together with thyristor Q2 also transistor TR1 will start to conduct (one-shot). The one shot current pulse generated by transistor TR1 is fed to , TYPE PACKAGE 12NC Resistors R1 100K SFR16 2322 187 . R2 100K SFR16 2322 187 . R3 4K7 SFR16 2322 187 . R4 100K SFR16 2322 187 . R5 -
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TEA1504 AN98011 BZX79C12V AC to DC smps circuit diagram pages Bc547 TRANSISTOR SMPS CIRCUIT DIAGRAM USING TRANSISTORS flyback 200w TEA15 BYD33J 1N4148
Abstract: +25°C, V+ = 24V, and TIP29C external transistor, unless otherwise noted. XTR112U XTR114U PARAMETER , ) Over-Scale Current (mA) With External Transistor 28 27 V+ = 36V 26 V+ = 7.5V 25 V+ = 24V 24 , vs Temperature." R L max = (V+) ­ 7.5V ­ R WIRING 20mA EXTERNAL TRANSISTOR It is , out-ofrange input conditions. Transistor Q1 conducts the majority of the signal-dependent 4-20mA loop current. Using an external transistor isolates the majority of the power dissipation from the precision Burr-Brown
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XTR112 PT2000 PT1000 RTD PT2000 temperature sensor rtd pt2000 PT2000 reference sheet Resistance characteristic Pt1000 XTR114 SO-14 RCV420 PWS740 ISO124
Abstract: SOCKETS FOR T0-5 & TO-100 Fully molded compact construction. Speeds transistor assembly , leads or .010 (.25) × .018 (.46) rectangular transistor leads. "MINI" HALOGEN LAMP SOCKETS · Accepts , 4594 FOR PINS TO-5 3 TO-5 4 TO-5 8 TO-100 8 TO-100 10 TRANSISTOR SOCKETS & ACCESSORIES 45 , CAT. NO. 4596 POWER TRANSISTOR MOUNTS Molded barrier insulators functionally replaces up to six , transistor to socket. Can be screwed down tightly to heat sink. For TO-3 CASES 1.562 [39.7] REF. 1.188 Keystone Electronics
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Abstract: HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra , .010 (.25) × .018 (.46) rectangular transistor leads. CAT. NO. 4590 4591 4592 4593 4594 , ] DIA. THRU .021 [.53] DIA. Cat. No. 4594 POWER TRANSISTOR MOUNTS .812 [20.6] CAT. NO , board to permit proper assembly of transistor to socket. Can be screwed down tightly to heat sink , ) PLS [1.57] .187 [4.8] DIA. (2) PLS .064 [1.63] DIA. (2) PLS MATERIAL: Nylon 6/6, UL Rated Keystone Electronics
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Abstract: . 106 Transistor . 149 MV Series , · TO-92 Type Transistor . 150 Analog Master . 116 · SST Type Transistor . 151 · SP-8 Type Transistor . 152 Particular Purpose IC . 117 · MP-3 Type Transistor . 153 · MP-5 (TO-126) Type Transistor . 153 Speech Synthesis IC NEC
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X10679EJCV0SG00 MICROPROCESSOR Z80 uPD72020 UPD77529 2SJ 3305 UPD6487 uPC5102 Z80TM V20TM V20HLTM V25TM V25HSTM V30TM
Abstract: transistor b?E D Product specification BF547 FEATURES PINNING â'¢ Stable oscillator operation PIN , collector The BF547 is a low cost NPN transistor in a plastic SOT23 envelope. It is intended for VHF and , Philips Semiconductors K_ ~ "N AHER PHILIPS/DISCRETE b7E » NPN 1 GHz wideband transistor BF547 THERMAL , /DISCRETE b7E ]>- NPN 1 GHz wideband transistor BF547 MBB474 4 , ]> ' NPN 1 GHz wideband transistor BF547 Io/IB = 10. Fig.8 Collector-emitter saturation voltage as a -
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aou 746 538 NPN transistor DB64 TRANSISTOR 185 846 S3131
Abstract: specification b?E ]' > NPN 1 GHz wideband transistor BF747 PINNING FEATURES â'¢ Stable , DESCRIPTION base 2 â'¢ Good thermal stability. collector Low cost NPN transistor in a plastic , 0024bfl3 001 Philips Semiconductors i APX N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor , Q0E4bfl3 T4fl « A P X - N AMER PHILIPS/DISCRETE NPN 1 GHz wideband transistor Product , specification b?E D BF747 NPN 1 GHz wideband transistor MBB408 MBB407 40 50 g UM (dB -
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Transistor AC 187 187 transistor npn AC 187 npn transistor TO 1 53T31
Abstract: specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING â'¢ Stable , transistor in a plastic SOT23 envelope. It is intended for VHF and UHF TV-tuner applications and can be , N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor Product specification b7E D BF547 , 130 N AUER PHILIPS/DISCRETE Product specification NPN 1 GHz wideband transistor T ( | f , transistor BF547 MBB409 e F (dB) 6 4 2 10_1 1 1c (mA) 1° 2 (mil l VC = 10 -
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y1 npn S3R31
Abstract: SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . . . designed for use in 5 to 10 Watt , (Min) â'¢ BD 185, 187. 189 are complementary with BD 186, 188. 190 lc = 0.5 Ade MAXIMUM RANGS Rating Symbol Type Value Unit Collector-Emitter Voltage VCEO BD 185 BD 187 BD 189 30 45 60 Vdc Collector-Base Voltage VCBO BD 185 BD 187 BD 189 40 55 70 Vdc Emitter-Base Voltage v EBO 5 Vdc Collector Current 'c 4.0 , Collector-Emitter Sustaining Voltage* (lc = 0.1 Adc, lB = 0) bvceo' BD 185 BD 187 BD 189 30 45 60 - Vdc Collector -
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TRANSISTOR BD 187 transistor tl 187 transistor bd 320 c BD189 BD185 BD187
Abstract: /DISCRETE b?E NPN 1 GHz wideband transistor £ BF747 FEATURES â'¢ Stable oscillator operation â'¢ High current gain â'¢ Good thermal stability. DESCRIPTION Low cost NPN transistor in a plastic SOT23 , NPN 1 GHz wideband transistor BF747 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL , Semiconductors nux, Product specification -N AMER PHILIPS/DISCRETE b7E J>- NPN 1 GHz wideband transistor , «apx n amer philips/discrete h?e NPN 1 GHz wideband transistor BF747 40 GUM (dB) 30 20 10 MBB407 -
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MBB400 transistor HJ 388 53-J31
Abstract: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . . . designed for , Current Gainâ'"hpE = 40 (Min) lc = 0.5 Ade BD 185, 187, 189 are complementary with BD 186, 188, 190 MAXIMUM RANGS Rating Symbol Type Value Uni« Collector-Emitter Voltage VCEO BD 185 BD 187 BD 189 30 45 60 Vdc Collector-Base Voltage VCBO BD 185 BD 187 BD 189 40 55 70 Vdc Emitter-Base Voltage v EBO 5 , 185 BD 187 BD 189 30 45 60 - Vdc Collector Cutoff Current (V =40 Vdc. Ip = 0) (V«p = 55 Vdc, lp = 0 -
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TL 187 TRANSISTOR NPN TL 187 TRANSISTOR BD transistor 80187 10 watt power transistor bd
Abstract: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128Âus Pulse , mode HEMT microwave transistor Internally matched Common source configuration Broadband Class AB , -000912-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized , ) Eff (%) Avg-Eff (%) RL (dB) Droop (dB) 960 3.4 18.7 - 8.5 58.8 - -8.8 0.4 1030 4.2 17.8 - 8.3 60.1 - -12.7 0.4 1090 3.4 18.7 - M/A-COM
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Abstract: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128us Pulse , transistor Internally matched Common source configuration Broadband Class AB operation RoHS Compliant , matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military , ) Droop (dB) 960 3.4 18.7 - 8.5 58.8 - -8.8 0.4 1030 4.2 17.8 - 8.3 60.1 - -12.7 0.4 1090 3.4 18.7 - 8.2 61.1 - -9.3 0.4 M/A-COM
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960-1215MHz amplifier 250W Gan on silicon jtids MAGX-000 250L00
Abstract: = +25°C, V+ = 24V, and TIP29C external transistor, unless otherwise noted. XTR112U XTR114U PARAMETER , Temperature." EXTERNAL TRANSISTOR range from 7.5V to 36V. The loop supply voltage, VPS, will differ from , limited to 3V. ADJUSTING INITIAL ERRORS Transistor Q, conducts the majority of the signal-dependent 4-20mA loop current. Using an external transistor isolates the majority of the power dissipation from the , external transistor is inside a feedback loop its characteristics are not critical. Requirements are: VCE0 -
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pt100 4 wire pt100 burr brown
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