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Part Manufacturer Description Datasheet BUY
8404501CA Texas Instruments Quadruple 2-Input Positive-OR Gates 14-CDIP -55 to 125 visit Texas Instruments
5962-8404501VDA Texas Instruments Quadruple 2-Input Positive-OR Gates 14-CFP -55 to 125 visit Texas Instruments
8404501DA Texas Instruments Quadruple 2-Input Positive-OR Gates 14-CFP -55 to 125 visit Texas Instruments
7604501EA Texas Instruments BCD-to-Seven-Segment Decoders/Drivers 16-CDIP -55 to 125 visit Texas Instruments
7604501FA Texas Instruments LS SERIES, SEVEN SEGMENT DECODER/DRIVER, INVERTED OUTPUT, CDFP16, DFP-16 visit Texas Instruments
84045012A Texas Instruments Quadruple 2-Input Positive-OR Gates 20-LCCC -55 to 125 visit Texas Instruments

re 04501

Catalog Datasheet MFG & Type PDF Document Tags

re 04501

Abstract: TRANSISTOR D 1902 Transistors Digital transistors (built-in resistors) DTD143EK / DTD143ES / DTD143EC ·F e a tu re s 1) B u ilt-in b ia s re s is to rs e n a b le th e configuration o f an inverter circuit w ithout con necting external input re s is to rs (s e e th e e q u iv a le n t c ir cuit). 2) T h e bias resistors con sist of thinfilm resistors with c o m p le te isola tio n to a llo w n e g a tiv e b ia s in g , DTC143EC 2.9±0.2 1.9+0.2 095 ± 0 1 0.45±0.1 1 :1 +0.1 0.15 +0.1 0.06 ROHM : SST3
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re 04501 TRANSISTOR D 1902 SC-59 H0-45--0 SC-72 96-372-D143E DTD143EC3 DTD143EK/DTD143ES/DTD143EC

re 04501

Abstract: TAPE, CARD READERS SMOKE SENSOR INFRARED RAYS APPLIED EQUIPMENT 2 - 0 0.45+0.1 â'¢ TO-18 metal , TOSHIBA is c o n tin u a lly w o rk in g t o im p ro v e th e q u a lity and th e re lia b ility o f its , due t o th e ir in h e re n t e le c tric a l s e n s itiv ity and v u ln e ra b ility t o physical stress. It is th e re s p o n s ib ility o f th e bu y e r, w h e n u tiliz in g TOSHIBA p roducts, t o , fa ilu re o f a TO SHIBA p ro d u c t c ould cause loss o f h u m an life , b o d ily in ju ry o r d
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TLN108

re 04501

Abstract: are a p h otocoupler in w hich a high e ffic ie n c y G aA s in fra re d lig h t e m ittin g d io d e , itting elem ent, and an integrated light detecting elem ent, consisting 0.45+0.1 Ã' chip, is , as to fa c e e a c h o th er, a n d o b je c ts p a s s in g b e tw e e n th e m a re detected. . , F type. * S w itc h in g tim e m e a su re m e n t c irc u it O ig N S .I 2ï"!=: - uâ
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ON1402A/B ON1403A/B 1402B

re 04501

Abstract: Diodes Ultra High-Speed Switching Diode Array BAV70/BAW56/BAV99/BAS16 % T h e s e p ro d u cts a re m a rke te d o n ly in c o u n trie s o th e r th a n Japan. ·A pplication U ltra high s p e e d s w itc h in g External dimensions (Units: mm) 2.9±0.2 ·F e a tu re s 1) C o m p a c t s iz e 2) H igh re lia b ility 3) H ig h s p e e d (trr=1.5ns Typ.) 1.»±0.2, 0.950,95 0.95+0-2 r- n 0.45+0.1 ( ifl- Us U.CfVI 4) C a n be a s s e m b le d a u to m a tica lly
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BAV70 BAW56 BAV99 BAS16 BAV70/BAW56/BAV99/BAS

"power supply circuits"

Abstract: re 04501 (1.7) (1.7) W1 0.5±0.1 0.45±0.1 W2 1.3±0.2 1.1 ±0.2 14Min. i 65Max. 7Min. S 27Max. R , hich in clu d e s high -p re cision m ounting, can be e xp a n d e d o n m other board. Examples of
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2am smd transistor

Abstract: transistor smd 4z ­1 0 tu re p e ra e te m ­1.0 ­1.5 VBE (V) s s hFE -IC Temperature , .) ) re) ­1A 0 ) atu ºC 125 ­2A tu re per ­1 IC = ­3A IB = ­5mA ­ 3 0 ºC , Characteristics (typ.) s ) te m p e ra tu re ) s e te mpe ra tu re ) ure ­0.4 ­30 ºC (C , (typ.) ( VC E = ­1 V ) 125ºC Typ ) tu re p e ra s e te m ºC (C a 25º ­30 ­1.0 , ) 300 0 ­1000 ­3000 re ) ure ­2 12 0 ra tu C (C a ­10mA ­2 rat pe
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2am smd transistor transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS SI-5155S SPB-G34S SPB-G54S SHV-05J SPB-G56S SHV-08J
Abstract: 0.25±0.1 (For reference only)Land Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 0.75 , Temperature This Hall IC s o utpu t is h eld as interna l da ta just be fo re the interna l circ uit Asahi Kasei Microdevices
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EM-0761 EM0761
Abstract: [ OA _ _ _ _ _ _ _ _ _ _ _ _ _ _RK73B fe a tu re s · R u 0 2 thick film resistor elem ent ·A nti-leaching nickel barrier terminations · 9 0 /1 0 solder plated terminations, standard ·A vailable in 100% tin terminations (no lead) · Also available with epoxy bondable palladium silver terminations in 1J, 2A and 2B sizes · M eets or exceeds EIA 575, EIAJ RC 2690A , EIA P D P -100, M IL -R -5 5 3 4 2 F · , ) (0.8±0.1) 012±.004 (0.3+0.1) (0.3 + 00p (0.45+0.1) .02±.004 .079±.008 .049±.004 -
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RK73B2E RK73B2H RK73B3A

re 04501

Abstract: Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 0.75 0.3 0.3 1 3 1.8±0.1 2 2 , h eld as interna l da ta just be fo re the interna l circ uit t u r n s O F F ( I D D O F
Asahi Kasei Microdevices
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EM-0771 EM0771

re 04501

Abstract: 4 pin hall marking R 0.25±0.1 (For reference only)Land Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 0.75 , Temperature This Hall IC s o utpu t is h eld as interna l da ta just be fo re the interna l circ uit
Asahi Kasei Microdevices
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4 pin hall marking R

re 04501

Abstract: Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 0.75 0.3 0.3 1 3 1.8±0.1 2 2 , h eld as interna l da ta just be fo re the interna l circ uit t u r n s O F F ( I D D O F
Asahi Kasei Microdevices
Original
Abstract: 0.15±0.1 0.25±0.1 (For reference only)Land Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 , Temperature This Hall IC s o utpu t is h eld as interna l da ta just be fo re the interna l circ uit Asahi Kasei Microdevices
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EM-0781 EM0781

re 04501

Abstract: EM-0771 Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 0.75 0.3 0.3 1 3 1.8±0.1 2 2 , h eld as interna l da ta just be fo re the interna l circ uit t u r n s O F F ( I D D O F
Asahi Kasei Microdevices
Original

re 04501

Abstract: 0.15±0.1 0.25±0.1 (For reference only)Land Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 , This Hall IC s o utpu t is h eld as interna l da ta just be fo re the interna l circ uit t u r n s
Asahi Kasei Microdevices
Original

re 04501

Abstract: EM0781 0.15±0.1 0.25±0.1 (For reference only)Land Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 , Temperature This Hall IC s o utpu t is h eld as interna l da ta just be fo re the interna l circ uit
Asahi Kasei Microdevices
Original

80 L hall effect sensor

Abstract: marking H 0.25±0.1 (For reference only)Land Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 0.75 , Temperature This Hall IC s o utpu t is h eld as interna l da ta just be fo re the interna l circ uit
Asahi Kasei Microdevices
Original
80 L hall effect sensor marking H

th12e

Abstract: SEL152R .0±0.2 1.0min (1.5) 0° 0.65max Cathode 30° 30° 60° 60° 0.45±0.1 ø4.8 0.4±0.1 0 , 0.45±0.1 (2.54) 4.0±0.2 Cathode 4.4 0.8±0.2 3.5 Directivity (Typical) 60° 60 , (Typical) 23.0min 4.5±0.5 (1.6) 2.5±0.1 1.0min 0° 0.65max 0.45±0.1 4.4 ø3 , 0.45±0.1 ±0.1 0° 3.5±0.1 (2.54) 4.0±0.2 Cathode 23.0min (1.7) Resin burr 0.3max , chip) (1.3) 0.4 0.45±0.1 (GaAlAs) 60° 90° 100% Resin heap 1.5max (2.54) 60
Sanken Electric
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SEL2410E SEL2710E th12e SEL152R SEL1053M SEL1310G SEL2210S 1E10CXM/SELU1E50CM SLH30 SLH50 SLS34 SEL2215RM SEL2215R

re 04501

Abstract: 0.15±0.1 0.25±0.1 (For reference only)Land Pattern Unit:mm) 1.2±0.1 0.45±0.1 0.75 0.3 , Ambient Temperature This Hall IC s o utpu t is h eld as interna l da ta just be fo re the interna
Asahi Kasei Microdevices
Original
CA95110

re 04502

Abstract: 1005N tru ctu re R esistance is m arked by three digits on the glass coating. (T .C .R .± 1 0 0 p p m , ?: 0.05 0.3510.05 0.2 ±0.1 CRI 6 0603 1.6±0,1 H a '0 0 .1 5 U.8 0 5 0.45+0.1 0.25+0.1 0.2 * g;]5 2mg
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re 04502 1005N RS481 CRB32 CR21B103JT CR-21

yc124

Abstract: YC12 5/20 RE:P2 DOCUMENT NO. 0201010093 Confidential, Do Not Disseminate. SYNTON-TECH , YC124 8P/4R A B C D E F G 0.45±0.05 2.0±0.2 0.5±0.05 0.3±0.05 0.45±0.1
Synton-Tech
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YC12 2R20 YC124-02 1/16W 200PPM/
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