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Part Manufacturer Description Datasheet BUY
POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

power transistor

Catalog Datasheet MFG & Type PDF Document Tags

transistor

Abstract: power transistor npn to-220 ) Product Category Lead type divices 2.0 20.0 Low-Frequency Power Transistor NPN PW-MOLD Built-in damper diode Lead type divices (Radial taping) 1.5 30.0 Low-Frequency Power Transistor NPN LSTM Darlington Lead type divices 1.5 30.0 Low-Frequency Power Transistor NPN PW-MOLD Darlington Lead type divices 1.5 30.0 Low-Frequency Power Transistor NPN TO-126(IS) Darlington Lead type divices (Radial taping) 1.5 30.0 Low-Frequency Power Transistor NPN MSTM Darlington 1.5 30.0 Low-Frequency Power
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TV power transistor datasheet

Abstract: power transistor Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor Color 2SC5404 Horizontal Deflection Output Power Transistor Color 2SC5411 Horizontal Deflection Output Power Transistor Color 2SC5421 Horizontal Deflection Output Power Transistor Color 2SC5422 Horizontal Deflection Output Power Transistor Color 2SC5445 Horizontal Deflection Output Power Transistor Color
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2SC5446 2SC5570 2SC5855 2SC5856 2SC5858 TV power transistor datasheet power transistor 2SD2599 equivalent transistor 2sd2499 2Sc5858 equivalent transistor 2SC5280 2SC5587 2SC5588 2SC5589

TRANSISTOR Z4

Abstract: transistor z3 Power Transistor RT230PD Product Features Application â'¢ 50 ~ 4000 MHz â'¢ 18dB Gain , Power Transistor RT230PD Electrical Specifications PARAMETER UNIT Typical Frequency , rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 ~ 896MHz , ⪠Version 5.2 Power Transistor RT230PD ⪠Tel : 82-31-250-5011 ⪠All specifications may change without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT230PD
RFHIC
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TRANSISTOR Z4 transistor z3 900MH SP-12 IRLML5203 LTC1261 1/16W

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 V_CEO,m Surface mount type divices -1.5 -10.0 High Frequency Switching Power Transistor PNP TSM Lead type divices (Radial taping) -2.0 -10.0 High Frequency Switching Power Transistor PNP LSTM 2 Lead type divices (Radial taping) 2.0 10.0 High Frequency Switching Power Transistor NPN LSTM 2 Lead type divices (Radial taping) -2.0 -10.0 High Frequency Switching Power Transistor PNP MSTM 2 Lead type divices (Radial taping) 2.0 10.0 High Frequency Switching Power Transistor NPN MSTM 2
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2SA2066 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 power transistor npn to-220 2SA2060 Transistor 126 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314

mj150* darlington

Abstract: BJT BD139 . . . . . . . . . . . . . . . . . . . . 35 10 Ampere Power Transistor NPN Silicon 140 VOLTS 117 , . . . . . . . . . . . . . . . . . . 65 30 Ampere Power Transistor NPN Silicon 60 Volts 200 Watts . . , . . . . . . . . . . . . . . . 142 0.5 Ampere Power Transistor NPN Silicon 350 Volts 20 Watts . . . . , . . . . . . . . . . . . . 146 3.0 Amperes Power Transistor PNP Silicon 80 Volts 30 Watts . . . . . . , , BD441 BD436, BD438, BD440, BD442 25 A, 100 V, 125 W NPN Silicon Power Transistor . . . . . . . . . . . .
ON Semiconductor
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mj150* darlington BJT BD139 npn darlington transistor 200 watts MJ11029 MJ31193 TIP102 Darlington transistor 2N3055A MJ15015 MJ15016 2N3055 MJ2955 2N3442

transistor 13003d

Abstract: 13003D ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High , VOLTAGE POWER TRANSISTOR MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu , -08 ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR MYBOL Min Nom Max A 9.0 10 11 , POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS , REV:A Jan-08 ELECTRONIC 13003A HIGH VOLTAGE POWER TRANSISTOR MICRO ELECTRONICS LTD
Micro Electronics
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13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003C

6R520E6

Abstract: TO-220 package thermal resistance MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOSTM E6 Power , 600V CoolMOSTM E6 Power Transistor 1 IPP60R520E6, IPA60R520E6 Description CoolMOSTM is a , ) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2010-04-09 600V CoolMOSTM E6 Power Transistor , . . 16 Final Data Sheet 3 Rev. 2.0, 2010-04-09 600V CoolMOSTM E6 Power Transistor , 600V CoolMOSTM E6 Power Transistor IPx60R520E6 Thermal characteristics 3 Thermal
Infineon Technologies
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6R520E6 TO-220 package thermal resistance 6r520 60R520E6

BCP68

Abstract: BCP69 Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 FEATURES QUICK , · Audio pre-amplifiers. BCP69-25 160 375 DESCRIPTION PNP medium power transistor (see , specification PNP medium power transistor; 20 V, 1 A BCP69 RELATED PRODUCTS TYPE NUMBER DESCRIPTION FEATURE BCP68 NPN medium power transistor NPN complement BC869 PNP medium power transistor SOT89, -20 V BC369 PNP medium power transistor SOT54, -20 V ORDERING INFORMATION
Philips Semiconductors
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BCP69-16 SC-73 M3D087 BCP69-16/IN BCP69/16 69-16N

light activated switch

Abstract: 2N2222 application note emitter follower power transistor, and its operation is almost identical to that of a standard power device. However , trends in power transistor technology. Safe-area, voltage and current handling capability have been , that cause power transistor failure can result in the destruction of the entire circuit. This is , to the low level circuitry. A new monolithic power transistor provides virtually absolute , reduces the peak current to further protect the power transistor. If, under prolonged overload, power
National Semiconductor
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LM195 AN-110 light activated switch 2N2222 application note emitter follower AN-110 national 2N2222 national PNP Transistor 2N2222 equivalent lamp flasher

5R380CE

Abstract: IPA50R380CE MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOSTM CE Power , CoolMOSTM CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOSTM is a , 2 Rev. 2.0, 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Table of Contents , CoolMOSTM CE Power Transistor IPx50R380CE Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless , , 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Thermal characteristics 3 Thermal
Infineon Technologies
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5R380CE 5R38 5r380 ID032 50R380CE PG-TO220 PG-TO262

si9955

Abstract: condition clears. Pin 9: G2 This pin drives the gate of the external low-side power transistor. Pin 10: GND , transistor. Pin 11 No connection. Pin 12: G1 This pin drives the gate of the external high side power transistor. Pin 13: S1 Connection for the source of the external high-side power transistor, the drain of the external low-side power transistor, the negative terminal of the bootstrap capacitor, and the system load , this power supply. Cross-Conduction Protection The high-side power transistor can only be turned on
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si9955 9976DY S-60752-R

POWER TRANSISTOR Cross

Abstract: 15-V clears. Pin 9: G2 This pin drives the gate of the external low-side power transistor. Pin 10: GND The ground return for V+, logic reference, and connection for source of external low-side power transistor , transistor. Pin 13: SI Connection for the source of the external high-side power transistor, the drain of the external low-side power transistor, the negative terminal of the bootstrap capacitor, and the , power transistor can only be turned on after a fixed time delay following the return to ground of the
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POWER TRANSISTOR Cross 15-V Si9976DY P-37081- E54735

nelson sensor light

Abstract: Widlar Clara California Abstract Safe-area protection can be provided for a large power transistor by limiting its peak junction temperature A pn junction that is distributed throughout the power transistor , amplifiers 1 ­ 5 However thermal coupling between the sensor and the power transistor has not been good , network that reduces the maximum output current of the power transistor with increasing collector voltage , the power transistor pulse or continuous for all operating conditions The protection is completely
National Semiconductor
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AN-446A nelson sensor light Widlar Yamatake PROXIMITY SENSORS Yamatake Corporation proximity sensor with metal detector block diagram R. J. Widlar and M. Yamatake, "A 150W op amp"

Si9955

Abstract: E-NAND clears. Pin 9: G2 This pin drives the gate of the external low-side power transistor. Pin 10: GND The ground return for V+, logic reference, and connection for source of external low-side power transistor. Pin 11 No connection. Pin 12: G1 This pin drives the gate of the external high side power transistor. Pin 13: SI Connection for the source of the external high-side power transistor, the drain of the external low-side power transistor, the negative terminal of the bootstrap capacitor, and the system load
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OCR Scan
E-NAND eNAND ESM73S

6r1k4c6

Abstract: IPD60R1K4C6 MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power , CoolMOSTM C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOSTM is a revolutionary technology , Sheet 2 Rev. 2.0, 2010-07-19 600V CoolMOSTM C6 Power Transistor IPD60R1K4C6 Table of , 4 Rev. 2.0, 2010-07-19 600V CoolMOSTM C6 Power Transistor IPD60R1K4C6 Maximum Ratings 2 , Sheet 6 Rev. 2.0, 2010-07-19 600V CoolMOSTM C6 Power Transistor IPD60R1K4C6 Electrical
Infineon Technologies
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6r1k4c6 smd diode EG - 413 Diode SMD SJ 94 MOSFET TRANSISTOR SMD MARKING CODE 11 Diode SMD SJ 98

2N2222 application note emitter follower

Abstract: PNP Transistor 2N2222 equivalent perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology , regulator - protection is doubly important. Overloads that cause power transistor failure can result in , transistor. If, under prolonged overload, power dissipation causes chip temperature to rise toward , an ordinary power transistor, and its operation is almost identical to that of a standard power , schematic of the power transistor. A power NPN Darlington is driven by an input PNP. The PNP and output NPN
National Semiconductor
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2n2222 npn transistor general purpose A0830 Pin layout for a 2N2222 transistor LM105

2N2222 die

Abstract: 2N2222 application note emitter follower recent trends in power transistor technology. Safe-area, voltage and current handling capability have , . Overloads that cause power transistor failure can result in the destruction of the entire circuit. This is , to the low level circuitry. A new monolithic power transistor provides virtually absolute , reduces the peak current to further protect the power transistor. If, under prolonged overload, power , fast switching. To the designer, the LM195 acts like an ordinary power transistor, and its operation
National Semiconductor
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2N2222 die 2N2222 transistor output curve equivalent component of transistor 2N2222 2N2222 NPN Transistor features national 2n2222 12v bulb

6R190C6

Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSâ"¢ C6 Power , 600V CoolMOSâ"¢ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 , JESD22 Final Data Sheet 2 Rev. 2.0, 2009-08-27 600V CoolMOSâ"¢ C6 Power Transistor , . . 19 Final Data Sheet 3 Rev. 2.0, 2009-08-27 600V CoolMOSâ"¢ C6 Power Transistor , Sheet 4 Rev. 2.0, 2009-08-27 600V CoolMOSâ"¢ C6 Power Transistor IPx60R190C6 Thermal
Infineon Technologies
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6R190C6 60R190C6 IPW60R190C6
Abstract: EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Page 1 EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8003 â'" Enhancement Mode Power Transistor Preliminary , EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 , Page 5 EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DIE MARKINGS Efficient Power Conversion
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j248

Abstract: EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Page 1 EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8005 â'" Enhancement Mode Power Transistor Preliminary , EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 , COPYRIGHT 2013 Page 5 EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet
Efficient Power Conversion
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j248
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