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POWEREST Texas Instruments Power Estimation Tool (PET)
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design
MSP430-3P-PCC-LIFETIMEPOWEREVALDEVKT Texas Instruments Lifetime Power? Evaluation and Development Kit
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design
TPS51604QDSGRQ1 Texas Instruments Synchronous Buck FET Driver for High-Frequency CPU Core Power in Automotive Applications 8-WSON
CSD86330Q3D Texas Instruments Synchronous Buck NexFET™ Power Block MOSFET Pair 8-LSON-CLIP -55 to 150

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power transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) Product Category Lead type divices 2.0 20.0 Low-Frequency Power Transistor NPN PW-MOLD Built-in damper diode Lead type divices (Radial taping) 1.5 30.0 Low-Frequency Power Transistor NPN LSTM Darlington Lead type divices 1.5 30.0 Low-Frequency Power Transistor NPN PW-MOLD Darlington Lead type divices 1.5 30.0 Low-Frequency Power Transistor NPN TO-126(IS) Darlington Lead type divices (Radial taping) 1.5 30.0 Low-Frequency Power Transistor NPN MSTM Darlington 1.5 30.0 Low-Frequency Power -
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2SD2206A 2SD2092 2SB905 transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784
Abstract: Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor Color 2SC5404 Horizontal Deflection Output Power Transistor Color 2SC5411 Horizontal Deflection Output Power Transistor Color 2SC5421 Horizontal Deflection Output Power Transistor Color 2SC5422 Horizontal Deflection Output Power Transistor Color 2SC5445 Horizontal Deflection Output Power Transistor Color -
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2SC5446 2SC5570 2SC5855 2SC5858 TV power transistor datasheet 2SD2599 equivalent transistor 2sd2499 2Sc5858 equivalent 32 TV power transistor 2SC5280 2SC5587 2SC5588 2SC5589
Abstract: Power Transistor RT230PD Product Features Application â'¢ 50 ~ 4000 MHz â'¢ 18dB Gain , Power Transistor RT230PD Electrical Specifications PARAMETER UNIT Typical Frequency , rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 ~ 896MHz , ⪠Version 5.2 Power Transistor RT230PD ⪠Tel : 82-31-250-5011 ⪠All specifications may change without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT230PD RFHIC
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transistor z3 TRANSISTOR Z4 900MH SP-12 IRLML5203 LTC1261 1/16W
Abstract: V_CEO,m Surface mount type divices -1.5 -10.0 High Frequency Switching Power Transistor PNP TSM Lead type divices (Radial taping) -2.0 -10.0 High Frequency Switching Power Transistor PNP LSTM 2 Lead type divices (Radial taping) 2.0 10.0 High Frequency Switching Power Transistor NPN LSTM 2 Lead type divices (Radial taping) -2.0 -10.0 High Frequency Switching Power Transistor PNP MSTM 2 Lead type divices (Radial taping) 2.0 10.0 High Frequency Switching Power Transistor NPN MSTM 2 -
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2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 2SA2060 transistor 2SC5359 2SC5171 transistor equivalent 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314
Abstract: . . . . . . . . . . . . . . . . . . . . 35 10 Ampere Power Transistor NPN Silicon 140 VOLTS 117 , . . . . . . . . . . . . . . . . . . 65 30 Ampere Power Transistor NPN Silicon 60 Volts 200 Watts . . , . . . . . . . . . . . . . . . 142 0.5 Ampere Power Transistor NPN Silicon 350 Volts 20 Watts . . . . , . . . . . . . . . . . . . 146 3.0 Amperes Power Transistor PNP Silicon 80 Volts 30 Watts . . . . . . , , BD441 BD436, BD438, BD440, BD442 25 A, 100 V, 125 W NPN Silicon Power Transistor . . . . . . . . . . . . ON Semiconductor
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TIP295 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ11029 MJ31193 npn darlington transistor 200 watts 2N3055A MJ15015 MJ15016 2N3055 MJ2955 2N3442
Abstract: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High , VOLTAGE POWER TRANSISTOR MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu , -08 ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR MYBOL Min Nom Max A 9.0 10 11 , POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS , REV:A Jan-08 ELECTRONIC 13003A HIGH VOLTAGE POWER TRANSISTOR MICRO ELECTRONICS LTD Micro Electronics
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13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003C
Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOSTM E6 Power , 600V CoolMOSTM E6 Power Transistor 1 IPP60R520E6, IPA60R520E6 Description CoolMOSTM is a , ) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2010-04-09 600V CoolMOSTM E6 Power Transistor , . . 16 Final Data Sheet 3 Rev. 2.0, 2010-04-09 600V CoolMOSTM E6 Power Transistor , 600V CoolMOSTM E6 Power Transistor IPx60R520E6 Thermal characteristics 3 Thermal Infineon Technologies
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6R520E6 TO-220 package thermal resistance 60R520E6
Abstract: Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 FEATURES QUICK , · Audio pre-amplifiers. BCP69-25 160 375 DESCRIPTION PNP medium power transistor (see , specification PNP medium power transistor; 20 V, 1 A BCP69 RELATED PRODUCTS TYPE NUMBER DESCRIPTION FEATURE BCP68 NPN medium power transistor NPN complement BC869 PNP medium power transistor SOT89, -20 V BC369 PNP medium power transistor SOT54, -20 V ORDERING INFORMATION Philips Semiconductors
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BCP69-16 SC-73 M3D087 BCP69-16/IN BCP69/16 69-16N
Abstract: power transistor, and its operation is almost identical to that of a standard power device. However , trends in power transistor technology. Safe-area, voltage and current handling capability have been , that cause power transistor failure can result in the destruction of the entire circuit. This is , to the low level circuitry. A new monolithic power transistor provides virtually absolute , reduces the peak current to further protect the power transistor. If, under prolonged overload, power National Semiconductor
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LM195 AN-110 light activated switch AN-110 national 2N2222 national RF Transistor 2n2222 PNP Transistor 2N2222 equivalent lamp flasher
Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOSTM CE Power , CoolMOSTM CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOSTM is a , 2 Rev. 2.0, 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Table of Contents , CoolMOSTM CE Power Transistor IPx50R380CE Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless , , 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Thermal characteristics 3 Thermal Infineon Technologies
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5R380CE 5R38 5r380 ID032 50R380CE PG-TO220 PG-TO262
Abstract: clears. Pin 9: G2 This pin drives the gate of the external low-side power transistor. Pin 10: GND The ground return for V+, logic reference, and connection for source of external low-side power transistor , transistor. Pin 13: SI Connection for the source of the external high-side power transistor, the drain of the external low-side power transistor, the negative terminal of the bootstrap capacitor, and the , power transistor can only be turned on after a fixed time delay following the return to ground of the -
OCR Scan
POWER TRANSISTOR Cross 15-V Si9955 Si9976DY 9976DY P-37081- E54735
Abstract: condition clears. Pin 9: G2 This pin drives the gate of the external low-side power transistor. Pin 10: GND , transistor. Pin 11 No connection. Pin 12: G1 This pin drives the gate of the external high side power transistor. Pin 13: S1 Connection for the source of the external high-side power transistor, the drain of the external low-side power transistor, the negative terminal of the bootstrap capacitor, and the system load , this power supply. Cross-Conduction Protection The high-side power transistor can only be turned on -
OCR Scan
S-60752-R
Abstract: Clara California Abstract Safe-area protection can be provided for a large power transistor by limiting its peak junction temperature A pn junction that is distributed throughout the power transistor , amplifiers 1 ­ 5 However thermal coupling between the sensor and the power transistor has not been good , network that reduces the maximum output current of the power transistor with increasing collector voltage , the power transistor pulse or continuous for all operating conditions The protection is completely National Semiconductor
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AN-446A nelson sensor light Widlar Yamatake PROXIMITY SENSORS C1995 SC-15
Abstract: clears. Pin 9: G2 This pin drives the gate of the external low-side power transistor. Pin 10: GND The ground return for V+, logic reference, and connection for source of external low-side power transistor. Pin 11 No connection. Pin 12: G1 This pin drives the gate of the external high side power transistor. Pin 13: SI Connection for the source of the external high-side power transistor, the drain of the external low-side power transistor, the negative terminal of the bootstrap capacitor, and the system load -
OCR Scan
E-NAND eNAND ESM73S
Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power , CoolMOSTM C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOSTM is a revolutionary technology , Sheet 2 Rev. 2.0, 2010-07-19 600V CoolMOSTM C6 Power Transistor IPD60R1K4C6 Table of , 4 Rev. 2.0, 2010-07-19 600V CoolMOSTM C6 Power Transistor IPD60R1K4C6 Maximum Ratings 2 , Sheet 6 Rev. 2.0, 2010-07-19 600V CoolMOSTM C6 Power Transistor IPD60R1K4C6 Electrical Infineon Technologies
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6r1k4c6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology , regulator - protection is doubly important. Overloads that cause power transistor failure can result in , transistor. If, under prolonged overload, power dissipation causes chip temperature to rise toward , an ordinary power transistor, and its operation is almost identical to that of a standard power , schematic of the power transistor. A power NPN Darlington is driven by an input PNP. The PNP and output NPN National Semiconductor
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2n2222 npn transistor general purpose A0830 LM105 Pin layout for a 2N2222 transistor
Abstract: recent trends in power transistor technology. Safe-area, voltage and current handling capability have , . Overloads that cause power transistor failure can result in the destruction of the entire circuit. This is , to the low level circuitry. A new monolithic power transistor provides virtually absolute , reduces the peak current to further protect the power transistor. If, under prolonged overload, power , fast switching. To the designer, the LM195 acts like an ordinary power transistor, and its operation National Semiconductor
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2N2222 die 12v bulb 2N2222 transistor output curve 2N2222 NPN Transistor features national 2n2222
Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSâ"¢ C6 Power , 600V CoolMOSâ"¢ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 , JESD22 Final Data Sheet 2 Rev. 2.0, 2009-08-27 600V CoolMOSâ"¢ C6 Power Transistor , . . 19 Final Data Sheet 3 Rev. 2.0, 2009-08-27 600V CoolMOSâ"¢ C6 Power Transistor , Sheet 4 Rev. 2.0, 2009-08-27 600V CoolMOSâ"¢ C6 Power Transistor IPx60R190C6 Thermal Infineon Technologies
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6R190C6 60R190C6 IPW60R190C6
Abstract: EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Page 1 EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8003 â'" Enhancement Mode Power Transistor Preliminary , EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 , Page 5 EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DIE MARKINGS Efficient Power Conversion
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Abstract: EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Page 1 EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8005 â'" Enhancement Mode Power Transistor Preliminary , EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 , COPYRIGHT 2013 Page 5 EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Efficient Power Conversion
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