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LM95245CIMMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-VSSOP -40 to 125 visit Texas Instruments
LM95245CIMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC visit Texas Instruments
LM95245CIM Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC visit Texas Instruments
LM96163CISDX/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125 visit Texas Instruments
LM96163CISD/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125 visit Texas Instruments Buy
ISL28210FBZ-T7 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy

pn junction diodes

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: a resistor/diode gate protection network. Inherent p-n junction diodes provide diode protection -
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Abstract: inputs incorporate a resistor/diode gate protection network. Inherent p-n junction diodes provide diode -
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curve tracer cost

Abstract: "white led" curve . LEDs are PN junction diodes, and their dynamic resistance shifts as their forward current changes , (Figure 4). This problem is compounded by the negative temperature coefficient of LEDs (and all PN junction diodes). The LEDs that draw the most current suffer the greatest increase in die temperature. As
National Semiconductor
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STMicroelectronics schottky rectifier marking code

Abstract: Schottky melf carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state , TMBYV 10-40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , 50 Rectangular Pulse IFSM Tstg Tj TL Storage and Junction Temperature Range Maximum , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig. 1 : Forward current versus
STMicroelectronics
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Abstract: reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless , TMBYV 10-20 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in , Repetitive Peak Reverse Voltage °C °C 260 Storage and Junction Temperature Range °C BYV , the junction capacitance (see fig. 5 page 4/4). Figure 1. Forward current versus forward voltage , (typical values). 2/4 TMBYV 10-20 40 Figure 3. Reverse current versus junction temperature STMicroelectronics
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Abstract: conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to , TMBYV 10-20 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in , Junction Temperature Range Maximum Lead Temperature for Soldering during 15s Value 1 25 Sinusoïdal Pulse 50 , variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). Figure 1. Forward current , at high level (typical values). 2/4 TMBYV 10-20 40 Figure 3. Reverse current versus junction STMicroelectronics
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byv 65

Abstract: in conventional PN junction diodes. Nevertheless, when the device switches from forward biased , BYV 10- 40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 10s at 4mm , with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig.1 : Forward , voltage at high level (typical values). 2/4 BYV 10-40 Fig.3 : Reverse current versus junction
STMicroelectronics
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melf diode marking code

Abstract: TMBYV10-40 carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state , TMBYV 10-40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , 50 Rectangular Pulse IFSM Tstg Tj TL Storage and Junction Temperature Range Maximum , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig. 1 : Forward current versus
STMicroelectronics
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Abstract: in conventional PN junction diodes. Nevertheless, when the device switches from forward biased , BYV 10- 40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 10s at 4mm , with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig.1 : Forward , voltage at high level (typical values). 2/4 BYV 10-40 Fig.3 : Reverse current versus junction STMicroelectronics
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TMBYV10-40

Abstract: carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state , TMBYV 10-40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifierdiodes , 50 Rectangular Pulse IFSM Tstg Tj TL Storage and Junction Temperature Range Maximum , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig. 1 : Forward current versus
STMicroelectronics
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Abstract: in conventional PN junction diodes. Nevertheless, when the device switches from forward biased , tp = 300µs 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL , diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). , current versus junction temperature. Figure 4. Reverse current versus VRRM in per cent. 3/5 STMicroelectronics
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melf diode marking

Abstract: conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , capacitance equal to the junction capacitance (see fig. 5 page 4/4). TMBYV 10-60 Figure 1. Forward , voltage at high level (typical values). Figure 3. Reverse current versus junction temperature
STMicroelectronics
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Abstract: stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from for ward , = 2 5 C t p = 10ms T amb = 25 C tp = 300|js T stg T, T l Storage and Junction Temperature , the junction capacitance (see fig. 5 page 4/4). 28 min. 4,07 5,20 28 min. 0 2,04 0 0 , 50 1 00 Fig.3 - Reverse current versus junction temperature. Fig.4 - Reverse current versus -
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0205B

Abstract: marking 5 melf -diode glass conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , capacitance equal to the junction capacitance (see fig. 5 page 4/4). TMBYV 10-60 Figure 1. Forward , voltage at high level (typical values). Figure 3. Reverse current versus junction temperature
STMicroelectronics
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melf diode marking

Abstract: marking 5 melf -diode glass conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , capacitance equal to the junction capacitance (see fig. 5 page 4/4). TMBYV 10-60 Figure 1. Forward , voltage at high level (typical values). Figure 3. Reverse current versus junction temperature
STMicroelectronics
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Abstract: is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction , BYV 10-60 Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus STMicroelectronics
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507-4861-3337-500

Abstract: 507-4957-3335-500 DIALIGHT CORP STE » â  2ûl2h72 GDOMEj? 0T3 â  Datalamp Cartridges MEET UL and CSA SPECIFICATIONS DIA W'l LED DATA LAMPS Solid state LEDs are the light source for a series of cartridges and indicator lights used for circuit voltages of 3.6 to 28 volts D.C. Basic materials are Gallium Arsenide Phosphide and Gallium Phosphide, forming PN junction diodes which, when biased in the forward direction, give off energy in the form of light (photons). This light typically peaks at 6700 A for the red, 5600
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diode 5082-2800

Abstract: hp 5082-2800 diode construction uti lizes a unique combination of both a conventional PN junction and a Schottky barrier. This , °C. 300 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature. PN junction diodes. The low tum-on voltage and subnanosec ond switching make it extreme ly attractive in , storage capacitor. At UHF, the diodes exhibit 95% rectification efficiencies. Both their low loss 3-24 and their high PIV allow the diodes to be used in mixer and modulator applications which require wide
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SURFACE MOUNT DIODES MIL GRADE

Abstract: Schottky diode Die flip chip there is in p-n junction diodes. This characteristic allows Schottky diodes to switch from conduction , otherwise equivalent p-n junction diode. This permits Schottky diodes to detect lower amplitude signals than a p-n junction. Skyworks GreenTM products are RoHS (Restriction of Hazardous Substances , chip Schottky diodes, DMK2790-000 single junction and DMK2308-000 antiparallel pair, offer all the , environmental requirements for MIC & hybrid applications · Designed for low junction capacitance and low
Skyworks Solutions
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APN3001 BRO373-09A SURFACE MOUNT DIODES MIL GRADE Schottky diode Die flip chip IEC-61249-2-21 RF Microwave schottky Diode mixer
Abstract: charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased , Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 15s , with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). 2/5 TMBYV , junction temperature. Figure 4. Reverse current versus VRRM in per cent. 3/5 TMBYV 10-60 Figure STMicroelectronics
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