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Part Manufacturer Description Datasheet BUY
LTC6409IUDB#TRPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409IUDB#TRMPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409CUDB#PBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409IUDB#PBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409CUDB#TRMPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC5582IDD#PBF Linear Technology LTC5582 - 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

pin diode switch up to 10 GHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: certifications: 50 Ohm SMA SPDT PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm PE7116 PE7116 REV 1.0 1 50 Ohm SMA SPDT PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm , 50 Ohm SMA SPDT PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7116 50 Ohm SMA SPDT PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm , SMA SPDT PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm from Pasternack Enterprises Pasternack Enterprises
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MIL-C-39012

2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 GHz) RF up to 10 GHz · other applications Discrete Schottky Diode Temperature stability High output , GHz: HSMP-382x, HSMP-389x HPMX-3003 (includes switch) PIN Diode Attenuator 0.9 and 2.4 GHz: HSMP , Radio (SMR) · CATV · Pagers/messaging RF up to 2.5 GHz · GPS (1.5 GHz) · 2.4 GHz ISM band Wireless Data RF Tags & RF/ID Wireless modems · PCS (1.8 GHz) · MMDS (2 GHz) RF up to 6 GHz · 5.8 GHz ISM band , Reader Wireless modems · Mobile Radio (SMR) · CATV · Pagers/messaging RF up to 2.5 GHz · GPS (1.5 GHz) ·
Hewlett-Packard
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MGA-82563 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 44xx HP RF TRANSISTOR GUIDE INA-10386 BPSK transmitters DCS-1800 MGA-83563 HPMX-5001 HPMX-5002 HPLL-8001
Abstract: 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to 40 GHz Up To +20 dBm TECHNICAL DATA , , inventory and certifications: 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to 40 GHz Up To +20 dBm PE7173 PE7173 REV NC 1 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to , °C, sea level 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to 40 GHz Up To +20 dBm , Switch Operating From 500 MHz to 40 GHz Up To +20 dBm PE7173 URL: http://www.pasternack.com/50 Pasternack Enterprises
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Solid State Switches

Abstract: pin diode switch up to 10 GHz ) switch offers typically > 100 dB of isolation up to 6 GHz. 0 -2 0 0 10 20 30 40 50 , from DC to 26.5 GHz) compared to the solid state switches. The 85331B 50 GHz solid state (PIN) switch , from the drain to the source of the FET. The PIN diode consists of a high resistivity intrinsic (I , switches, which have the lowest loss (up to 26.5 GHz), are suitable for these types of applications. Refer , ­ 50 GHz solid state (PIN) Figure 4. Electro-mechanical versus solid state switch insertion loss
Agilent Technologies
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Solid State Switches pin diode switch up to 10 GHz N1810TL PIN Diode Switch for frequencies up to 10 GHz Solid State Microwave microwave fet IC 5989-5189EN

UHF Phase Shifter

Abstract: used in broadband designs up to 10 GHz for Outline 60, and 18 GHz for Outline 61. Because of good heat , characteristic to some degree, but the PIN diode is optimized in design to achieve a relatively wide resistance , resistor. The resistance of the PIN diode is related to the bias current, the geometry of the I-layer and , can be employed to minimize the PIN diode is the carrier capacitive (and other parasitic) lifetime, t , from 90% to 10% is called the applications, where the diode is transition time, tt- The sum, normally
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OCR Scan
UHF Phase Shifter
Abstract: MASW-011053 HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network 2 - 18 GHz Features , : 81.44.844.8298 MASW-011053 HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network 2 - 18 GHz Rev , to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Fully , : 81.44.844.8296 / Fax: 81.44.844.8298 J4 MASW-011053 HMIC Silicon PIN Diode SP3T Switch with Integrated , Low Loss 6. The forward diode voltage drop between: J8 to J5, J6 or J7 is 1.0 V typical. J5, J6 M/A-COM
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MASW-011053-47300W

HMPP-3890

Abstract: pin diode microstrip loss was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the , applications up to 6 GHz. Pin Connections and Package Marking 4 3 AA 2 1 Package Lead Code , and attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode , PIN diode, we will now focus on the HMPP-3890 epi diode. Linear Equivalent Circuit In order to , -3895) Figure 11. Linear Equivalent Circuit of the MiniPak PIN Diode. 10 HMPP-389x Epi PIN Diode 1
Agilent Technologies
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HMPP-389T pin diode microstrip DEMO-HMPP-389T HMPP-3892 HMPP-3895 HSMP-3880 HMPP-389 5988-4071EN 5988-5733EN

High voltage diodes

Abstract: dBm input power, +13 dBm flat leakage power, up to 10 GHz Land mobile radio, military , power, up to 10 GHz Land mobile radio, military, infrastructure, and more CLA4609-086LF Course , 1.0 SMS7630-061 Detector applications up to 40 GHz Lowest barrier height, low inductance 0.15 , , +13 dBm flat leakage power, up to 2.5 GHz Land mobile radio, military, infrastructure, and more SMP1330-085LF Low loss, high power, +30 dBm input power, +13 dBm flat leakage power, up to 4 GHz
Skyworks Solutions
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High voltage diodes SMP1345-040LF SMP1320-040LF SMP1352-079LF SMS7630-040LF SMS3922-079LF SC-79

pin diodes marking AA

Abstract: DEMO-HMPP-389T 0.6 dB up to 6 GHz (Figure 23). Applying a reverse bias to the PIN diode has the effect of reducing , -389T low inductance wide band shunt switch is well suited for applications up to 6 GHz. · Better , attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode for high , 10 HMPP-389x Epi PIN Diode 1 0.01 0.1 1 10 BIAS CURRENT (mA) Figure 10. Resistance vs , -389T on the Demoboard Introduction The HMPP-389T PIN diode is a high frequency shunt switch. It has
Avago Technologies
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pin diodes marking AA HSMP-389T Forward Reference Diode HMPP-3893 RS-481 5989-3630EN AV02-0653EN

HMPP-3890

Abstract: was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the effect of , applications up to 6 GHz. · Single and dual versions · Matched diodes for consistent performance · Low , looked to the PIN diode for high performance/low cost solutions to their switching and level control , influence over a number of PIN diode parameters, among which are distortion and basic diode behavior. To , -3880 Bulk PIN Diode Linear Equivalent Circuit In order to predict the performance of the HMPP-3890 as a
Agilent Technologies
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5989-3178EN

pin diode microstrip

Abstract: 125 diode loss was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the , suited for applications up to 6 GHz. Package Lead Code Identification (Top View) Single , quantities. For over 30 years, designers have looked to the PIN diode for high performance/low cost , . 1000 HSMP-3880 Bulk PIN Diode RESISTANCE () is replaced with reverse bias, to some predetermined , (400 to 3000 nsec. for bulk diodes). Lifetime has a strong influence over a number of PIN diode
Avago Technologies
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125 diode 63 marking code diode diode led ir diode MARKING CODE 930 marking code 17 surface mount diode pn junction diode structure

pin diode

Abstract: DEMO-HMPP-389T up to 6 GHz (Figure 23). Applying a reverse bias to the PIN diode has the effect of reducing its , -389T low inductance wide band shunt switch is well suited for applications up to 6 GHz. · Better , Isolation SPDT Switch, Dual Bias. Epi Switching Diode N+ Substrate Figure 9. PIN Diode Construction , the PIN diode for high performance/low cost solutions to their switching and level control needs , long (400 to 3000 nsec. for bulk diodes). Lifetime has a strong influence over a number of PIN diode
Avago Technologies
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pin diode QFN PACKAGE thermal resistance

SK063A

Abstract: sk063 up to 6 GHz (Figure 23). Applying a reverse bias to the PIN diode has the effect of reducing its , -389T low inductance wide band shunt switch is well suited for applications up to 6 GHz. · Better , Isolation SPDT Switch, Dual Bias. Epi Switching Diode N+ Substrate Figure 9. PIN Diode Construction , the PIN diode for high performance/low cost solutions to their switching and level control needs , long (400 to 3000 nsec. for bulk diodes). Lifetime has a strong influence over a number of PIN diode
Avago Technologies
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SK063A sk063 spice hmpp-3892 aplac

DSA0043308

Abstract: HMPP-3890 was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the effect of , applications up to 6 GHz. · Single and dual versions · Matched diodes for consistent performance · Low , looked to the PIN diode for high performance/low cost solutions to their switching and level control , influence over a number of PIN diode parameters, among which are distortion and basic diode behavior. To , -3880 Bulk PIN Diode Linear Equivalent Circuit In order to predict the performance of the HMPP-3890 as a
Agilent Technologies
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DSA0043308
Abstract: service. An example device is a GaAs monolithic PIN diode SP4T switch that operates from DC to 20 GHz , . One limitation of a PIN diode switch is its lower frequency limit of a few kHz to about a MHz , switch to work up to the desired frequency. Shunt diode switches have limited bandwidth arising from the , . Work has been done that shows graphene flakes that can operate as a switch up to 60 GHz with , insertion loss and over 30 dB isolation at 40 GHz. Figure X shows a SP8T broadband an AlGaAs HMIC PIN diode -
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CMOS Switches Offer High Performance in Low Power, Wideband Applications

Abstract: ADG901 aviation industry that require an operating frequency up to 1 GHz and beyond. Wideband Switch Basics Wideband switches are designed to meet the demands of devices transmitting at frequencies up to 1 GHz and , the order of 0.1 ohm for 1 A up to 10 kohm for 1 µA. Accordingly, the first drawback when using PIN , than 70 dB up to about 80 MHz, 37 dB at 1 GHz, and about 20 dB at 2 GHz. This off isolation specification outperforms many GaAs switches by about 10 dB/decade. Typical GaAs switch values at 1 GHz are
Analog Devices
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ADG901 CMOS Switches Offer High Performance in Low Power, Wideband Applications ADG918 ADG919 Applications of microcontrollers in aviation CMOS switch
Abstract: MASW-011052 HMIC Silicon PIN Diode SP2T Switch with Integrated Bias Network 2 - 18 GHz Features , -011052 HMIC Silicon PIN Diode SP2T Switch with Integrated Bias Network 2 - 18 GHz Rev. V2 Typical , to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Fully , / Fax: 81.44.844.8298 MASW-011052 HMIC Silicon PIN Diode SP2T Switch with Integrated Bias Network 2 , / Fax: 81.44.844.8298 MASW-011052 HMIC Silicon PIN Diode SP2T Switch with Integrated Bias Network 2 M/A-COM
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MASW-011052-14220G MASW-011052-14220W
Abstract: Sensitivity: The MA4SW410 PIN diode switch is ESD sensitive and proper precautions should be taken to avoid , MA4SW410 HMICTM Silicon SP4T PIN Diode Switch RoHS Compliant Features Broad Bandwidth Specified , is a SP4T, series-shunt, broadband, PIN diode switch made with M/A-COM's Tech's patented HMICTM , contained herein without notice. MA4SW410 HMICTM Silicon SP4T PIN Diode Switch RoHS Compliant V6 , contained herein without notice. MA4SW410 HMICTM Silicon SP4T PIN Diode Switch RoHS Compliant V6 M/A-COM
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Abstract: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded , from 100 MHz to 4.5 GHz. â'¢ Supports up to 20 watts power â'¢ Low insertion loss 0.3 dB typical up to 4.5 GHz â'¢ High Isolation 30 dB typical up to 4.5 GHz â'¢ High Isolation 40 dB typical up , 10mA 10mA -10 20mA S22, dB 50mA -20 1 Frequency (GHz) 0 -10 0.5 Pin #2 , 2.5 3 Frequency (GHz) 3.5 4 4.5 5 Pin #2: -10 V Insertion Loss, dB Aeroflex / Metelics
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STD-J-20C 888-641-SEMI A17140
Abstract: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded , from 100 MHz to 4.5 GHz. â'¢ Supports up to 20 watts power â'¢ Low insertion loss 0.3 dB typical up to 4.5 GHz â'¢ High Isolation 30 dB typical up to 4.5 GHz â'¢ High Isolation 40 dB typical up , 10mA 10mA -10 20mA S22, dB 50mA -20 1 Frequency (GHz) 0 -10 0.5 Pin #2 , 2.5 3 3.5 Frequency (GHz) 4 4.5 5 Pin #2: -10 V Insertion Loss, dB Aeroflex Microelectronic Solutions
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