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phototransistor 600 nm

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Abstract: AlGaAs 1.00 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 QSD124 5 0.5 880 AlGaAs 6.00 ­ 30 100 , VCE (V) Ee (mW/cm2) p (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max , Phototransistor QSC113 QSC113 5 0.5 880 AlGaAs 2.40 9.60 30 100 Phototransistor QSC114 QSC114 5 0.5 880 AlGaAs 4.00 ­ 30 100 Phototransistor QSC133 QSC133 5 0.25 880 AlGaAs ... Original
datasheet

2 pages,
31.54 Kb

QSC113 phototransistor application circuit phototransistor datasheet Phototransistor to-18 QSC112 phototransistor 800 nm QSC114 QSC133 QSD122 QSD123 QSD722 QSD723 QSD724 QSC112 abstract
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Abstract: (2.54) NOM Part Number QSC112 QSC112 QSC113 QSC113 QSC114 QSC114 QSC133 QSC133 VCE (V) 5 5 5 5 Test Conditions Ee p (nm , 0.155 (3.94) 0.018 (0.46) SQ. (2X) Sensor Type Phototransistor Phototransistor Phototransistor , (2.54) NOM Part Number QSD122 QSD122 QSD123 QSD123 QSD124 QSD124 Test Conditions Ee p VCE (V) (mW/cm2) (nm) 5 5 5 0.5 0.5 0.5 880 AlGaAs 880 AlGaAs 880 AlGaAs IC (ON) (mA) min max 1.00 4.00 6.00 6.00 16.00 ­ BVCEO ICEO @ 10 V VCE (V) (nA) max max 30 30 30 100 100 100 Sensor Type Phototransistor Phototransistor ... Original
datasheet

1 pages,
133.49 Kb

phototransistor 600 nm phototransistor datasheet abstract
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Abstract: ) min min 5 5 5 0.050 0.050 0.050 0.30 1.00 10 30 30 15 0.100 (2.54) Output Phototransistor Phototransistor Photodarlington Wavelength p (nm) 880 880 880 1 4 0.083 (2.11) PIN 1 COLLECTOR PIN , Reflective Opto Sensors Reflective Focusing Sensor PCB Mount E D + E 0.236 (6.00) + + , (mA) (V) VCE (V) Distance (inch) min min 10 0.160 0.16 30 0.362 (9.20) Output Phototransistor Wavelength p (nm) 940 All dimensions are in inches (millimeters) Reflective Non-focusing Sensor PCB ... Original
datasheet

1 pages,
230.34 Kb

QRD1114 phototransistor 600 nm datasheet abstract
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Abstract: Phototransistor Phototransistor typical characteristics ythhyyy^O^m^ •^^ÎI^ Power dissipation , AföSirL RL (Q) ÂsfeSJSÎi'IÉ Spectral sensitivity « 0.6 , Phototransistor Phototransistor m « « iSSii'iixE'R Absolute maximum, ratings lS6t)Si^fi?l1#1t , No. : nm Lens appearance V V mW °C mA (Lv=100 Ix) Vce ; MA V (Vce =10V) 3 SPS-135C SPS-135C 880 ... OCR Scan
datasheet

2 pages,
388.95 Kb

SPS-135C SPS-1118C 181C SPS-181C SPS-189C SPS-235C SPS-281C SPS-289C SPS135 emitter phototransistor 18-1c EMITTER phototransistor 1118C SPS135C phototransistor 600 nm datasheet abstract
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Abstract: Degrees (°) @ 1/2 Intensity Wavelength (nm) p TO-46 LED Package (Convex Lens) 1N6264 1N6264 6.00 ­ , 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 QSD124 5 0.5 880 AlGaAs 6.00 ­ 30 100 Phototransistor TO-18 Detector , GaAs 2.00 ­ 30 100 Phototransistor Part Number Test Conditions (nm) p Ee+ (mW , Wavelength (nm) p Min Max Max VF (V) @ IF = 100 mA QEC112 QEC112 6 30 1.7 10 24 940 ... Original
datasheet

13 pages,
179.99 Kb

L14G3 phototransistor qrb1114 L14f1 data sheet moc photodiode QSE773 l14f1 photodiode TO46 lens phototransistor H21A1 DATA SHEET PHOTOTRANSISTOR 3 PIN QRB1134 LED 55 with L14F1 phototransistor L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v QEC112 QEC113 QEC112 abstract
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Abstract: Silicon Phototransistor OP580 OP580 Features: · Wide acceptance angle · Fast response time · Plastic leadless chip carrier (PLCC) Description: The OP580 OP580 is an NPN silicon phototransistor mounted , Number OP580 OP580 Machine automation Optical encoders Sensor Phototransistor Viewing Angle 100° , www.optekinc.com Issue 1.2 02/07 Page 1 of 3 Silicon Phototransistor OP580 OP580 Absolute Maximum Ratings , emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire ... Original
datasheet

3 pages,
233.38 Kb

OP580 OP280 OP580 abstract
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Abstract: Silicon Phototransistor OP580 OP580 Features: · · · · Wide acceptance angle Fast response , OP580 OP580 is an NPN silicon phototransistor mounted in a miniature SMD package. The device has a flat window , Sensor Phototransistor Viewing Angle 100° Lead Length N/A 1 2 Pin # 1 RoHS , Silicon Phototransistor OP580 OP580 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage , mW/° C above 25° C. 3. EE(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm ... Original
datasheet

3 pages,
212.52 Kb

smd transistor 6m OP580 OP280 4 pin phototransistor phototransistor 600 nm OP580 abstract
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Abstract: Silicon Phototransistor OP580 OP580 Features: x Wide acceptance angle x Fast response time x Plastic leadless chip carrier (PLCC) Description: The OP580 OP580 is an NPN silicon phototransistor mounted in a , Information Sensor Phototransistor Viewing Angle 100° Lead Length N/A 1 2 1 2 Pin # 1 2 , Silicon Phototransistor OP580 OP580 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage , mW/° C above 25° C. 3. EE(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm ... Original
datasheet

3 pages,
379.04 Kb

OP580 OP580 abstract
datasheet frame
Abstract: Ic Vceo t@ Ic Vce lambda PC @ theta lambda (V) opr 10 (mA) (mA) (mA) (V) p (nm) Vec Lens (mW) deg Max (deg Vceo Min Typ Max (nm) * Typ. Max * 5V * Typ. * * C) * (nA) * Ic , - 3 900 +/50 Table Footnotes q q 600 ; 1050 [top of page] * Limits of Safe , ://download.siliconexpert.com/pdfs/ Original
datasheet

2 pages,
44.72 Kb

datasheet abstract
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Abstract: t@ Ic Vce lambda PC @ theta lambda (V) opr 10 (mA) (mA) (mA) (V) p (nm) Vec Lens (mW) deg (nm) Max (deg Vceo Min Typ Max * Typ. Max * 5V Ic * Typ. * * C) * (nA) * 1ma Max , 900 +/15 Table Footnotes q q 600 ; 1050 15/15 mS [top of page] * Limits of , / Original
datasheet

2 pages,
44.32 Kb

IC free phototransistor 600 nm datasheet abstract
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www.datasheetarchive.com/download/86199271-169526ZC/fototran.zip (fototran.xls)
Infineon 19/02/2000 62.9 Kb ZIP fototran.zip
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Infineon 19/02/2000 48.78 Kb ZIP fiboptic.zip