NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AlGaAs 1.00 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 QSD124 5 0.5 880 AlGaAs 6.00 30 100 , VCE (V) Ee (mW/cm2) p (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max , Phototransistor QSC113 QSC113 5 0.5 880 AlGaAs 2.40 9.60 30 100 Phototransistor QSC114 QSC114 5 0.5 880 AlGaAs 4.00 30 100 Phototransistor QSC133 QSC133 5 0.25 880 AlGaAs ... | Original |
2 pages, |
QSC133 phototransistor datasheet QSC112 QSC113 QSC114 Phototransistor QSD122 QSD123 QSD124 QSD722 QSD723 QSD724 phototransistor application circuit QSE773 QSC112 abstract |
|
|||
| Abstract: Phototransistor Phototransistor typical characteristics ythhyyy^O^m^ •^^ÎI^ Power dissipation , AföSirL RL (Q) ÂsfeSJSÎi'IÉ Spectral sensitivity « 0.6 , Phototransistor Phototransistor m « « iSSii'iixE'R Absolute maximum, ratings lS6t)Si^fi?l1#1t , No. : nm Lens appearance V V mW °C mA (Lv=100 Ix) Vce ; MA V (Vce =10V) 3 SPS-135C SPS-135C 880 ... | OCR Scan |
2 pages, |
SPS-289C SPS-1118C SPS-135C SPS-181C SPS-189C SPS-235C SPS-281C emitter phototransistor phototransistor 600 nm phototransistor 500-600 nm datasheet abstract |
|
|||
| Abstract: Degrees (°) @ 1/2 Intensity Wavelength (nm) p TO-46 LED Package (Convex Lens) 1N6264 1N6264 6.00 , 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 QSD124 5 0.5 880 AlGaAs 6.00 30 100 Phototransistor TO-18 Detector , GaAs 2.00 30 100 Phototransistor Part Number Test Conditions (nm) p Ee+ (mW , Wavelength (nm) p Min Max Max VF (V) @ IF = 100 mA QEC112 QEC112 6 30 1.7 10 24 940 ... | Original |
13 pages, |
Phototransistor H22A1 qrb1114 L14f1 data sheet QSE773 l14f1 photodiode QRB1134 LED 55 with L14F1 phototransistor TO46 lens phototransistor H21A1 DATA SHEET PHOTOTRANSISTOR 3 PIN L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v QEC112 QEC113 QEC112 abstract |
|
|||
| Abstract: Silicon Phototransistor OP580 OP580 Features: · · · · Wide acceptance angle Fast response , OP580 OP580 is an NPN silicon phototransistor mounted in a miniature SMD package. The device has a flat window , Sensor Phototransistor Viewing Angle 100° Lead Length N/A 1 2 Pin # 1 RoHS , Silicon Phototransistor OP580 OP580 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage , mW/° C above 25° C. 3. EE(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm ... | Original |
3 pages, |
OP580 OP280 phototransistor 600 nm OP580 abstract |
|
|||
| Abstract: Silicon Phototransistor OP580 OP580 Features: · Wide acceptance angle · Fast response time · Plastic leadless chip carrier (PLCC) Description: The OP580 OP580 is an NPN silicon phototransistor mounted , Number OP580 OP580 Machine automation Optical encoders Sensor Phototransistor Viewing Angle 100° , www.optekinc.com Issue 1.2 02/07 Page 1 of 3 Silicon Phototransistor OP580 OP580 Absolute Maximum Ratings , emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire ... | Original |
3 pages, |
OP580 OP280 OP580 abstract |
|
|||
| Abstract: t@ Ic Vce lambda PC @ theta lambda (V) opr 10 (mA) (mA) (mA) (V) p (nm) Vec Lens (mW) deg (nm) Max (deg Vceo Min Typ Max * Typ. Max * 5V Ic * Typ. * * C) * (nA) * 1ma Max , 900 +/15 Table Footnotes q q 600 ; 1050 15/15 mS [top of page] * Limits of , /< (1 of 2)6/27/2005 3:32:21 PM Right Angle - 2 Leads Clear Epoxy - 30 deg Angle com , /< (2 of 2)6/27/2005 3:32:21 PM ... | Original |
2 pages, |
phototransistor 600 nm datasheet abstract |
|
|||
| Abstract: Ic Vceo t@ Ic Vce lambda PC @ theta lambda (V) opr 10 (mA) (mA) (mA) (V) p (nm) Vec Lens (mW) deg Max (deg Vceo Min Typ Max (nm) * Typ. Max * 5V * Typ. * * C) * (nA) * Ic , - 3 900 +/50 Table Footnotes q q 600 ; 1050 [top of page] * Limits of Safe , :// (1 of 2)6/27/2005 3:38:54 PM , :// (2 of 2)6/27/2005 3:38:54 PM ... | Original |
2 pages, |
datasheet abstract |
|
|||
| Abstract: Vceo t@ Ic Vce lambda PC @ theta lambda (V) opr 10 (mA) (mA) (mA) (V) p (nm) Lens (mW) Vec deg Max (deg Vceo Min Typ Max (nm) * Typ. Max * 5V Ic * * Typ. * C) * (nA) * 1ma , Table Footnotes q q 600 ; 1050 15/15 mS [top of page] * Limits of Safe Operation * @ , :// (1 of 2)6/27/2005 , ... | Original |
2 pages, |
dual Phototransistor side dual Phototransistor datasheet abstract |
|
|||
| Abstract: Vce lambda PC @ theta lambda (V) opr 10 (mA) (mA) (mA) (V) p (nm) Lens (mW) Vec deg Max (deg Vceo Min Typ Max (nm) * Typ. Max * 5V Ic * * Typ. * C) * (nA) * 1ma Max Clear , Table Footnotes q q 600 ; 1050 15/15 mS [top of page] * Limits of Safe Operation * @ , sales@lumex. , :// (2 of 2)6/27/2005 3:37:52 PM ... | Original |
2 pages, |
datasheet abstract |
|
|||
| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Si Phototransistor KPT081M31 KPT081M31 Features ·NPN phototransistor ·Transparent epoxy mold ·Low leak current Dimensions (unit: mm , Active area S mm2 Sensitive wavelength 400 880(p) 1000 nm p=Peak wavelength , nA Vce = 20V Current amplification factor hFE 600 - - Collector-emitter , ). Si Phototransistor KPT081M31 KPT081M31 Collector Disspation-Ambient Temperature Photocurrent - ... | Original |
2 pages, |
phototransistor 600 nm npn phototransistor 2002/95/EC KPT081M31 2002/95/EC abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| Transceiver Fiber Optics - 1300/1300nm Fiber Optics - 1300/1550nm - 1550/1300nm Fiber Optics Plastic Fiber Components Fiber Optics - Laser 1300nm Fiber Optics - Laser 1550nm Fiber Optics - Explanations IGBT Modules - 1200 V-Types IGBT Modules - 1700 V-Types IGBT Modules - 600 V 's Silicon MMICs Silicon Motion Sensor Silicon Photodiodes Silicon Phototransistors Silicon Phototransistors - Metal Package Silicon Phototransistors - Miniature / Arrays Silicon Phototransistors www.datasheetarchive.com/files/siemens/index/listprod.htm |
Siemens | 27/02/1998 | 31.58 Kb | HTM | listprod.htm |
| -X7400 -X7400 -X7400 -X7400 NPN-SILICON-PHOTOTRANSISTOR; ESPECIALLY SUITABLE FOR APPLICATIONS FROM 420 TO 1130nm; HIGH PHOTOTRANSISTOR; ESPECIALLY SUITABLE FOR APPLICATIONS FROM 450 TO 1120nm; HIGH LINEARITY; INDUSTRIAL ELECTRONICS PHOTOTRANSISTOR; ESPECIALLY SUITABLE FOR APPLICATIONS FROM 450 TO 1120nm; HIGH LINEARITY; INDUSTRIAL ELECTRONICS PHOTOTRANSISTOR ARRAY; 10 TRANSISTORS PER ARRAY; ESPECIALLY SUITABLE FOR APPLICATIONS FROM 440 TO 1070nm; MINIATUR PHOTOTRANSISTOR; ESPECIALLY SUITABLE FOR APPLICATIONS FROM 440 TO 1070nm; HIGH LINEARITY; FOR COMPUTER www.datasheetarchive.com/download/86199271-169526ZC/fototran.zip (fototran.xls) |
Infineon | 19/02/2000 | 62.9 Kb | ZIP | fototran.zip |
| to TO-18 BIDI TRANSSEIVER OPTICAL MODULE; 1300nm EMITTING/1550nm RECEIVING FUNCTION; HIGH POWER ; 1300nm EMITTING/1550nm RECEIVING FUNCTION; HIGH POWER; DESIGNED FOR APPLICATIONS IN PASSIVE .0 similar to TO-18 BIDI TRANSSEIVER OPTICAL MODULE; 1300/1300nm; LOW POWER; DESIGNED FOR APPLICATIONS IN OPTICAL MODULE; 1300/1300nm; LOW POWER; DESIGNED FOR APPLICATIONS IN PASSIVE-OPTICAL NETWORKS; INTEGRATED -40.0 85.0 -40.0 85.0 PROD 7.0 similar to TO-18 BIDI TRANSSEIVER OPTICAL MODULE; 1300nm EMITTING www.datasheetarchive.com/download/3377784-169522ZC/fiboptic.zip (fiboptic.xls) |
Infineon | 19/02/2000 | 48.78 Kb | ZIP | fiboptic.zip |
| " END MENUE "IGBT @3622" CALL "Explanations @36221" CALL "600V-Types @36222" CALL "1200V Instructions" "6VARBHW" END MENUE "600V-Types @36222" CALL "3-Phase-Full-Bridges @362221" CALL "Half @362243" FILE "BYM 300 A 170 DN 2" "y30a17n2" FILE "BYM 600 A 170 DN 2" "y60a17n2" END MENUE "Smart www.datasheetarchive.com/files/siemens/setup/hlmenu.def |
Siemens | 27/02/1997 | 84.6 Kb | DEF | hlmenu.def |
| DIODE; LONG TERM STABILITY; WIDE BEAM (+/-30#2;); MATCHES PHOTOTRANSISTOR LPT80A LPT80A LPT80A LPT80A; FOR A VARIETY OF ; LONG TERM STABILITY; WIDE BEAM (+/-25#2;); MATCHES PHOTOTRANSISTOR LPT80A LPT80A LPT80A LPT80A; FOR A VARIETY OF MANUFACTURING ;SMALL OUTLINE DIMENSIONS;SAME PACKAGE AS PHOTOTRANSISTOR SFH3100F SFH3100F SFH3100F SFH3100F;HIGH COUPLING FACTOR IN LIGHT BARRIERS WITH 600m T_amb 100m 25.0 22m T_amb 100m 25.0 TAG SIL 35.7m 38.5m 5.5m 5.9m 2.54m 8.2m 9m 27.5m 29.5m 4.8m .0 T_amb 25.0 1.5 1.8 T_amb 100m 25.0 100.0 25p 0.0 1M PHE 100m IRED 880n 100m 25.0 55n 25.0 60.0 Ga www.datasheetarchive.com/download/34345603-169532ZC/infraemi.zip (infraemi.xls) |
Infineon | 19/02/2000 | 63.32 Kb | ZIP | infraemi.zip |