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Part : FLK-XLENS/TELEPHOTO Supplier : Fluke Manufacturer : Newark element14 Stock : - Best Price : $8995.00 Price Each : $8995.00
Part : IR-1900-PHOTO-SENSOR Supplier : TE Connectivity Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
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Part : PHOTO CR2 Supplier : Energizer Manufacturer : TME Electronic Components Stock : 47 Best Price : $7.25 Price Each : $10.59
Part : IR-1900-PHOTO-SENSOR Supplier : TE Connectivity Manufacturer : Sager Stock : - Best Price : $435.24 Price Each : $478.76
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phototransistor 600 nm

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Degrees (°) @ 1/2 Intensity Wavelength (nm) p TO-46 LED Package (Convex Lens) 1N6264 6.00 ­ , 6.00 30 100 Phototransistor QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 5 0.5 880 AlGaAs 6.00 ­ 30 100 Phototransistor TO-18 Detector , GaAs 2.00 ­ 30 100 Phototransistor Part Number Test Conditions (nm) p Ee+ (mW , Wavelength (nm) p Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940 Fairchild Semiconductor
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QRB1134 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 QEC113 QEC121 QEC122 QEC123 QED233 QED234
Abstract: AlGaAs 1.00 6.00 30 100 Phototransistor QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 5 0.5 880 AlGaAs 6.00 ­ 30 100 , VCE (V) Ee (mW/cm2) p (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max , Phototransistor QSC113 5 0.5 880 AlGaAs 2.40 9.60 30 100 Phototransistor QSC114 5 0.5 880 AlGaAs 4.00 ­ 30 100 Phototransistor QSC133 5 0.25 880 AlGaAs Fairchild Semiconductor
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QSC112 QSD122 QSD722 QSD723 QSD724 QSE773 lens photodiode phototransistor Phototransistor to-18 Phototransistor phototransistor application circuit T-13/4
Abstract: QSD122 5 0.5 880 AlGaAs 1.00 6.00 30 100 Phototransistor QSD123 5 0.5 , 6.00 ­ 30 100 Phototransistor TO-18 Detector (Plastic) Package QSD722 5 0.5 , Max ICEO (nA) @ VCE = 10V Sensor Type 100 p (nm) BVCEO (V) Max Phototransistor T , 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength p (nm) Min Max Max VF , VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength p (nm) Min Max Max Fairchild Semiconductor
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4n35 optocoupler spice model MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice slotted optocouplers TS-16949 ISO-14001
Abstract: Wavelength (nm) p 0.040 (1.02) 1 3 Ø0.020 (0.51) 2X 0.040 (1.02) 45° 1N6265 6.00 ­ , 1.00 6.00 30 100 Phototransistor QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 5 0.5 880 AlGaAs 6.00 ­ 30 100 Phototransistor 0.020 (0.51) SQ. (2X , 0.150 0.60 PIN2 CATHODE Output Wavelength p (nm) 30 Phototransistor 940 30 , 5 0.150 0.20 30 PIN2 CATHODE Output Wavelength p (nm) Phototransistor 940 Fairchild Semiconductor
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PIN CONFIGURATION OF L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3 SE-171
Abstract: (2.54) NOM Part Number QSC112 QSC113 QSC114 QSC133 VCE (V) 5 5 5 5 Test Conditions Ee p (nm , 0.155 (3.94) 0.018 (0.46) SQ. (2X) Sensor Type Phototransistor Phototransistor Phototransistor , (2.54) NOM Part Number QSD122 QSD123 QSD124 Test Conditions Ee p VCE (V) (mW/cm2) (nm) 5 5 5 0.5 0.5 0.5 880 AlGaAs 880 AlGaAs 880 AlGaAs IC (ON) (mA) min max 1.00 4.00 6.00 6.00 16.00 ­ BVCEO ICEO @ 10 V VCE (V) (nA) max max 30 30 30 100 100 100 Sensor Type Phototransistor Phototransistor Fairchild Semiconductor
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Abstract: #27;#30; !D monolithic 13 NPN phototransistor array Optical device consisting of a monolithic 13 silicon NPN phototransistor array chip with high gain uniformity for the output signals. The active area of each phototransistor is 0.2 x 0.45 mm2. The high optical responsivity is due to the antireflective coating deposited on the phototransistor active areas , EE GE IE ME OE N.C. NE LE HE FE DE BE CC Function Not connected Phototransistor A Optoi Microelectronics
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OIT20S13 OIT21 12234556667832897A8B5C
Abstract: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES · Package type: surface , NPN epitaxial planar phototransistor in a miniature PLCC-3 package for surface mounting on printed , 0.1 (nm) 450 to 1080 Note · Test conditions see table "Basic Characteristics" ORDERING , www.vishay.com 1 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS , = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, = 950 nm, RL = 1 k VS = 5 V, IC = 1 mA, = Vishay Semiconductors
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VSML3710 J-STD-020 2002/95/EC 2002/96/EC VEMT4700-GS08 VEMT4700-GS18
Abstract: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , phototransistor in a miniature PLCC-3 package for surface mounting on printed boards. The device is sensitive to , ) 0.1 (nm) 0.5 COMPONENT ± 60 450 to 1080 VEMT4700 Note Test conditions see table , : detectortechsupport@vishay.com www.vishay.com 531 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS , VCE = 20 V, E = 0 ICEO VCE = 5 V, f = 1 MHz, E = 0 CCEO Ee = 1 mW/cm2, = 950 nm, VCE = 5 Vishay Semiconductors
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J-STD-020D
Abstract: ° 0 400 600 800 0.4 0.6 1000 - Wavelength (nm) 94 8348 0.2 0 94 8248 , BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , accordance RoHS 2002/95/EC and WEEE 2002/96/EC BPV11 is a silicon NPN phototransistor with high radiant , PRODUCT SUMMARY Ica (mA) (deg) 0.1 (nm) 10 ± 15 450 to 1080 PACKAGING REMARKS , : detectortechsupport@vishay.com Document Number: 81504 Rev. 1.6, 05-Sep-08 BPV11 Silicon NPN Phototransistor, RoHS Vishay Semiconductors
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Abstract: =5V IC=2mA Saturation Voltage nm 950 600 IE=2mA IB=203A 160 VCE=5V EE=1.0mW/cm2 1 , Optical receivers 2 AE Phototransistor A Emitter Optical encoders 3 CE Phototransistor C Emitter Controls/Drives 4 EE Phototransistor E Emitter General Purpose 5 GE Phototransistor G Emitter 6 IE Phototransistor I Emitter 7 N.C. Not connected 8 HE Phototransistor H Emitter 9 FE Phototransistor F Emitter 10 DE Phototransistor D Emitter 11 Optoi Microelectronics
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OIT26
Abstract: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · , DESCRIPTION · Flat glass window BPW76 is a silicon NPN phototransistor with high radiant sensitivity in , COMPONENT Ica (mA) (deg) 0.1 (nm) BPW76A 0.4 to 0.8 ± 40 450 to 1080 BPW76B , Rev. 1.4, 08-Sep-08 BPW76A, BPW76B Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors Ptot - Total Power Dissipation (mW) 800 600 RthJC 400 200 RthJA 0 0 25 50 Vishay Semiconductors
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VBPW76A npn phototransistor
Abstract: Phototransistor A Emitter Phototransistor C Emitter Phototransistor E Emitter Phototransistor G Emitter Not conected Phototransistor I Emitter Phototransistor K Emitter Phototransistor M Emitter Common collector Not connected Phototransistor L Emitter Phototransistor J Emitter Phototransistor H Emitter Not connected Phototransistor F Emitter Phototransistor D Emitter Phototransistor B Emitter Common collector , /27 15.09.00 12234556667832897A8B5C 13 elements monolithic phototransistor 0.60mm D OIT19C Optoi Microelectronics
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Abstract: 7226: 630 nm · Silicon phototransistor · Low saturation voltage · Emitter and detector electrically , orange amber super-red 40 20 0 400 450 500 550 600 650 nm 700 LED , 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 Dark current , 7225: 589 nm SFH 7226: 630 nm · Silizium-Fototransistor · Geringe Sättigungsspannung · Emitter und Diode galvanisch getrennt Features · Display function can be controlled by built-in phototransistor OSRAM
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fototransistor led fototransistor phototransistor 650 nm led fototransistor 7226 OHF01121 7225-Q/R 7226-P/Q OHF01527 OHF01530 IPCE/IPCE25 OHF01528
Abstract: 200 mV VCE=52V 0.1 VCC=5V IC=2mA Saturation Voltage nm 950 600 IE=2mA IB , Function Common collector Phototransistor B Emitter Phototransistor D Emitter Not connected Phototransistor F Emitter Not connected Not connected Phototransistor E Emitter Phototransistor C Emitter Phototransistor A Emitter TOP VIEW Rev. A; 09.2009 â'" OIT2C; 2009 , monolithic SMD phototransistor 5 elements monolithic SMD phototransistor 4 elements monolithic SMD Optoi Microelectronics
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Abstract: N.C. N.C. FE DE BE CC Function Phototransistor A Emitter Phototransistor C Emitter Phototransistor E Emitter Not connected Not connected Phototransistor G Emitter Phototransistor I Emitter Phototransistor K Emitter Common collector Phototransistor L Emitter Phototransistor J Emitter Phototransistor H Emitter Not connected Not connected Phototransistor F Emitter Phototransistor D Emitter Phototransistor B Emitter Common collector TOP VIEW OIT6C Rev. A Optoi Microelectronics
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Abstract: IO4 (Lux) Ev 0 20 40 60 100 120 (°c) US® Ta l^ftJMMWÉ 400 500 600 700 900 1000 HOO(nm) Ã"Ã" A , / i / \ ( \ tr,tf/Ri_* ' (¿/sec.) *Jt(deg.) 400 500 600 700 900 1000 1100 (nm , /ftflf«tt»tt tr,tf/RL Oísec.) IflWlWtt 400 500 600 700 900 1000 MOO(nm) A 10« ÃO5 (Q) fimm RL fcJt , , 'hMTggffgBT'To The ST-23G, a high-sensitivity NPN silicon phototransis-tor mounted in a clear sidelooking , Spectral sensitivity A 500â'"1,050 nm t* - 7 IS JS ift M Peak wavelength 880 nm * 11 ft Half -
OCR Scan
phototransistor ST-7L ST-7L phototransistors PFR 20100 ST-7L BTM marking ST-24F 2856K
Abstract: 200 mV VCE=52V 0.1 VCC=5V IC=2mA Saturation Voltage nm 950 600 IE=2mA IB , GE IE CC HE FE DE CE Function Phototransistor B Emitter Phototransistor A Emitter Phototransistor E Emitter Phototransistor G Emitter Phototransistor I Emitter Common Collector Phototransistor H Emitter Phototransistor F Emitter Phototransistor D Emitter Phototransistor C Emitter TOP , 12234556667832897A8B5C 9 elements monolithic SMD phototransistor D OIT8C ABSOLUTE MAXIMUM RATINGS Symbol Optoi Microelectronics
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Abstract: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES · · · · , phototransistor with daylight blocking filter in a miniature, black 0805 package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. Package type: surface mount Package form: 0805 , filter matches with 830 nm to 950 nm IR emitters Angle of half sensitivity: = ± 60° Package matched , Encoders Position sensors PRODUCT SUMMARY (deg) 0.5 (nm) ± 60 750 to 1010 PACKAGING Vishay Semiconductors
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VSMB1940X01 AEC-Q101
Abstract: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · , sealed package BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically , ) (deg) 0.1 (nm) BPW77NA 7.5 to 15 ± 10 450 to 1080 BPW77NB > 10 ± 10 450 to , -Sep-08 BPW77NA, BPW77NB Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors Ptot - Total Power Dissipation (mW) 800 600 RthJC 400 200 RthJA 0 0 25 50 75 100 125 150 Vishay Semiconductors
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VBPW77NB APPLICATION NOTE BpW77 Silicon NPN Phototransistor
Abstract: Collector Light Current (mA) 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 - Wavelength (nm) = 950 nm 1 , TEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · · · · · , epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The , 60 0.1 (nm) 450 to 1080 ORDERING INFORMATION ORDERING CODE TEMT3700-GS08 TEMT3700-GS18 Note MOQ , Silicon NPN Phototransistor, RoHS Compliant 125 PV - Power Dissipation Limit (mW) R thJA = 400 K/W Vishay Semiconductors
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