500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TLP626(TP1,F) Toshiba America Electronic Components PHOTOTRANSISTOR SGL 60MA 4SMD visit Digikey
VEMT2020X01 Vishay Semiconductors PHOTOTRANSISTOR NPN GULLWING visit Digikey
SFH 3605-3/4-Z OSRAM Opto Semiconductors PHOTOTRANSISTOR visit Digikey
SFH 3605-2/3-Z OSRAM Opto Semiconductors PHOTOTRANSISTOR visit Digikey
SFH 9206 OSRAM Opto Semiconductors PHOTOTRANSISTOR visit Digikey
VEMT4700F-GS08 Vishay Semiconductors VEMT4700 Silicon NPN Phototransistor visit Digikey

phototransistor+600+nm

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Degrees (°) @ 1/2 Intensity Wavelength (nm) p TO-46 LED Package (Convex Lens) 1N6264 6.00 ­ , Wavelength (nm) p Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940 , VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) p Min Max Max , Wavelength (nm) p Part Number T-3/4 (2 mm) LED Package Part Number Ie (mW/sr) CIF = 100 mA , 880 1N6265 6.00 ­ 1.7 10 80 940 CQX15 5.40 ­ 1.7 10 80 940 Fairchild Semiconductor
Original
QRB1134 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 QEC113 QEC121 QEC122 QEC123 QED233 QED234
Abstract: VCE (V) Ee (mW/cm2) p (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max , AlGaAs 1.00 6.00 30 100 Phototransistor QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 5 0.5 880 AlGaAs 6.00 ­ 30 100 , /cm2) p (nm) min max BVCEO (V) max Thin Sidelooker Detector Package QSE213 5 0.5 , /cm2) p (nm) min max 940 GaAs 30.0 ­ Sidelooker Detector Package (No Lens) QSE773 Fairchild Semiconductor
Original
QSC112 QSC113 QSC114 QSC133 QSD122 QSD722 phototransistor 600 nm lens photodiode phototransistor Phototransistor to-18 Phototransistor phototransistor application circuit T-13/4
Abstract: 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength p (nm) Min Max Max VF , VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength p (nm) Min Max Max , Wavelength p (nm) Products T-3/4 (2 mm) LED Package Products Ie (mW/sr) @ IF = 100 mA Max VF , ) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength p (nm) Products Min TO-46 LED Package (Convex Lens) 1N6264 6.00 ­ 1.7 10 16 940 LED55B 3.50 ­ Fairchild Semiconductor
Original
4n35 optocoupler spice model MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice slotted optocouplers TS-16949 ISO-14001
Abstract: Wavelength (nm) p 0.040 (1.02) 1 3 Ø0.020 (0.51) 2X 0.040 (1.02) 45° 1N6265 6.00 ­ , Wavelength (nm) p 0.155 (3.94) QEC112 6 30 1.7 10 24 940 QEC113 14 ­ , Power Wavelength (nm) p QED233 50 1.6 10 40 27 ­ 1.6 10 40 940 , Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) p 10 40 1.9 10 30 880 , Wavelength (nm) p QEE113 3 12 1.7 10 50 4 16 1.9 10 50 880 QEE123 Fairchild Semiconductor
Original
PIN CONFIGURATION OF L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3 SE-171
Abstract: Plastic Silicon Photosensors T-1 (3 mm) Detector Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM Part Number QSC112 QSC113 QSC114 QSC133 VCE (V) 5 5 5 5 Test Conditions Ee p (nm , (2.54) NOM Part Number QSD122 QSD123 QSD124 Test Conditions Ee p VCE (V) (mW/cm2) (nm) 5 5 5 0.5 0.5 0.5 880 AlGaAs 880 AlGaAs 880 AlGaAs IC (ON) (mA) min max 1.00 4.00 6.00 6.00 16.00 ­ BVCEO Fairchild Semiconductor
Original
Abstract: Unit 10 VCE=5V 1=880nm 1p Min VR=10V 100 nA 0.5 A/W 750 nm On-state Collector Current 950 nm 0.1 100 3A VCE=52V 0.1 100 3A VCC=5V IC=2mA Saturation Voltage 500 600 200 mV VCE=7.7V IE=2mA IB=203A 160 2 VCE=5V EE=1.0mW/cm Optoi Microelectronics
Original
OIT20S13 OIT21 12234556667832897A8B5C
Abstract: 0.1 (nm) 450 to 1080 Note · Test conditions see table "Basic Characteristics" ORDERING , = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, = 950 nm, RL = 1 k VS = 5 V, IC = 1 mA, = 950 nm, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO CCEO Ica p 0.1 VCEsat tr , deg nm nm V s s kHz Rise time, fall time Cut-off frequency www.vishay.com 2 For technical Vishay Semiconductors
Original
VEMT4700 VSML3710 J-STD-020 2002/95/EC 2002/96/EC VEMT4700-GS08
Abstract: ) 0.1 (nm) 0.5 COMPONENT ± 60 450 to 1080 VEMT4700 Note Test conditions see table , VCE = 20 V, E = 0 ICEO VCE = 5 V, f = 1 MHz, E = 0 CCEO Ee = 1 mW/cm2, = 950 nm, VCE = 5 , 0.25 Angle of half sensitivity MAX. deg p 850 nm 0.1 450 to 1080 nm Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VCEsat 0.15 VS = 5 V, IC = 1 mA, = 950 nm, RL = 1 k tr/tf 6 us VS = 5 V, IC = 1 mA, = 950 nm, RL = 100 tr/tf 2 us VS = 5 V, IC = Vishay Semiconductors
Original
J-STD-020D VEMT4700-GS18
Abstract: ° 0 400 600 800 0.4 0.6 1000 - Wavelength (nm) 94 8348 0.2 0 94 8248 , PRODUCT SUMMARY Ica (mA) (deg) 0.1 (nm) 10 ± 15 450 to 1080 PACKAGING REMARKS , , = 950 nm, VCE = 5 V Ica 10 mA ± 15 deg Collector light current 3 Angle of half sensitivity 50 nA p 850 nm 0.1 450 to 1080 nm Ee = 1 mW/cm2, = 950 nm, IC = 1 mA VCEsat 130 Wavelength of peak sensitivity Range of spectral bandwidth Vishay Semiconductors
Original
BPV11
Abstract: =7.7V nm 100 3A 100 3A On-state Collector Current 200 mV VCE=52V 0.1 VCC=5V IC=2mA Saturation Voltage nm 950 600 IE=2mA IB=203A 160 VCE=5V EE=1.0mW/cm2 1 Optoi Microelectronics
Original
OIT26
Abstract: COMPONENT Ica (mA) (deg) 0.1 (nm) BPW76A 0.4 to 0.8 ± 40 450 to 1080 BPW76B , Semiconductors Ptot - Total Power Dissipation (mW) 800 600 RthJC 400 200 RthJA 0 0 25 50 , Wavelength of peak sensitivity p 850 nm 0.1 450 to 1080 nm Ee = 1 mW/cm2, = 950 nm, IC , PARAMETER TEST CONDITION Collector light current PART SYMBOL MIN. Ee = 1 mW/cm2, = 950 nm , 950 nm 2.25 50 100 150 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Vishay Semiconductors
Original
BPW76 VBPW76A npn phototransistor
Abstract: =7.7V Ice0 Collector-Emitter Current VCE=52V HFE Gain VCC=5V IC=2mA 600 Saturation Voltage IE=2mA IB=203A 160 VCE(sat) IC(on) On-state Collector Current 750 500 nm 100 3A 0.1 2 nm 0.1 VCE=5V EE=1.0mW/cm 950 100 3A 200 mV 1 mA AC Optoi Microelectronics
Original
OIT19C
Abstract: orange amber super-red 40 20 0 400 450 500 550 600 650 nm 700 LED , 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 Dark current , 7225: 589 nm SFH 7226: 630 nm · Silizium-Fototransistor · Geringe Sättigungsspannung · Emitter und , · SFH 7225: yellow LED · SFH 7226: super-red LED · Dominant wavelength: SFH 7225: 589 nm SFH 7226: 630 nm · Silicon phototransistor · Low saturation voltage · Emitter and detector electrically OSRAM
Original
fototransistor led fototransistor phototransistor 650 nm led fototransistor 7226 OHF01121 7225-Q/R 7226-P/Q OHF01527 OHF01530 IPCE/IPCE25 OHF01528
Abstract: 0.5 A/W 750 500 0.1 VCE=7.7V nm 100 3A 100 3A On-state Collector Current 200 mV VCE=52V 0.1 VCC=5V IC=2mA Saturation Voltage nm 950 600 IE=2mA IB Optoi Microelectronics
Original
Abstract: Unit 5 VCE=5V 1=880nm 1p Min VR=10V 100 nA 0.5 A/W 750 nm On-state Collector Current 950 nm 0.1 100 3A VCE=52V 0.1 100 3A VCC=5V IC=2mA Saturation Voltage 500 600 200 mV VCE=7.7V IE=2mA IB=203A 150 2 VCE=5V EE=1.0mW/cm Optoi Microelectronics
Original
Abstract: IO4 (Lux) Ev 0 20 40 60 100 120 (°c) US® Ta l^ftJMMWÉ 400 500 600 700 900 1000 HOO(nm) Ã"Ã" A , / i / \ ( \ tr,tf/Ri_* ' (¿/sec.) *Jt(deg.) 400 500 600 700 900 1000 1100 (nm , /ftflf«tt»tt tr,tf/RL Oísec.) IflWlWtt 400 500 600 700 900 1000 MOO(nm) A 10« ÃO5 (Q) fimm RL fcJt , Spectral sensitivity A 500â'"1,050 nm t* - 7 IS JS ift M Peak wavelength 880 nm * 11 ft Half , Spectral sensitivity A 500-1,050 nm f - 9 i S $ S Peak wavelength 880 nm Â¥ fi A Half angle A0 -
OCR Scan
ST-23G phototransistor ST-7L ST-7L phototransistors PFR 20100 ST-7L BTM marking 2856K
Abstract: 0.5 A/W 750 500 0.1 VCE=7.7V nm 100 3A 100 3A On-state Collector Current 200 mV VCE=52V 0.1 VCC=5V IC=2mA Saturation Voltage nm 950 600 IE=2mA IB Optoi Microelectronics
Original
Abstract: bandwidth is matched with 830 nm to 950 nm IR emitters. Package type: surface mount Package form: 0805 , filter matches with 830 nm to 950 nm IR emitters Angle of half sensitivity: = ± 60° Package matched , Encoders Position sensors PRODUCT SUMMARY (deg) 0.5 (nm) ± 60 750 to 1010 PACKAGING , capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Collector , p 870 nm 0.5 750 to 1010 Range of spectral bandwidth Collector emitter saturation Vishay Semiconductors
Original
TEMT7100X01 VSMB1940X01 AEC-Q101
Abstract: ) (deg) 0.1 (nm) BPW77NA 7.5 to 15 ± 10 450 to 1080 BPW77NB > 10 ± 10 450 to , Dissipation (mW) 800 600 RthJC 400 200 RthJA 0 0 25 50 75 100 125 150 , of half sensitivity TYP. MAX. UNIT 1 100 nA V p 850 nm 0.1 450 to 1080 nm VCEsat 0.15 Wavelength of peak sensitivity Range of spectral bandwidth Ee = 1 Collector emitter saturation voltage = 950 nm, IC = 1 mA mW/cm2, 0.3 V Turn-on time VS = Vishay Semiconductors
Original
BPW77 VBPW77NB APPLICATION NOTE BpW77 Silicon NPN Phototransistor
Abstract: Collector Light Current (mA) 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 - Wavelength (nm) = 950 nm 1 , 60 0.1 (nm) 450 to 1080 ORDERING INFORMATION ORDERING CODE TEMT3700-GS08 TEMT3700-GS18 Note MOQ , emitter saturation voltage Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, = 950 nm, RL = 1 k VS = 5 V, IC = 1 mA, = 950 nm, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO Vishay Semiconductors
Original
TEMT3700
Showing first 20 results.