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phototransistor 600 nm

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Abstract: Degrees (°) @ 1/2 Intensity Wavelength (nm) p TO-46 LED Package (Convex Lens) 1N6264 1N6264 6.00 ­ , 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 QSD124 5 0.5 880 AlGaAs 6.00 ­ 30 100 Phototransistor TO-18 Detector , GaAs 2.00 ­ 30 100 Phototransistor Part Number Test Conditions (nm) p Ee+ (mW , Wavelength (nm) p Min Max Max VF (V) @ IF = 100 mA QEC112 QEC112 6 30 1.7 10 24 940 ... Fairchild Semiconductor
Original
datasheet

13 pages,
179.99 Kb

h21A1 sensor L14f1 data sheet L14G3 phototransistor moc photodiode QSE773 TO46 lens phototransistor PHOTOTRANSISTOR 3 PIN H21A1 DATA SHEET l14f1 photodiode QRB1134 opto transistor moc 12v LED 55 with L14F1 phototransistor L14F1 PHOTOTRANSISTOR PIN Phototransistor L14G3 T1 L14F1 l14f1 ir phototransistor Phototransistor L14F1 phototransistor 3 pin L14F1 L14F1 PHOTOTRANSISTOR L14F1 phototransistor datasheet TEXT
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Abstract: AlGaAs 1.00 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 Phototransistor QSD124 QSD124 5 0.5 880 AlGaAs 6.00 ­ 30 100 , VCE (V) Ee (mW/cm2) p (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max , Phototransistor QSC113 QSC113 5 0.5 880 AlGaAs 2.40 9.60 30 100 Phototransistor QSC114 QSC114 5 0.5 880 AlGaAs 4.00 ­ 30 100 Phototransistor QSC133 QSC133 5 0.25 880 AlGaAs ... Fairchild Semiconductor
Original
datasheet

2 pages,
31.54 Kb

QSC113 phototransistor datasheet phototransistor 950 nm phototransistor 800 nm QSC114 QSC133 QSD122 QSD123 photo-transistor QSD722 QSD723 QSD724 phototransistor application circuit Phototransistor Phototransistor to-18 QSC112 QSE773 QSD124 lens photodiode phototransistor phototransistor 600 nm TEXT
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Abstract: QSD122 QSD122 5 0.5 880 AlGaAs 1.00 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 , 6.00 ­ 30 100 Phototransistor TO-18 Detector (Plastic) Package QSD722 QSD722 5 0.5 , Max ICEO (nA) @ VCE = 10V Sensor Type 100 p (nm) BVCEO (V) Max Phototransistor T , 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength p (nm) Min Max Max VF , VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength p (nm) Min Max Max ... Fairchild Semiconductor
Original
datasheet

56 pages,
1340.17 Kb

opto transistor moc SOIC Package 8-Pin Surface Mount 601 moc3020 OPTO l14f1 ir phototransistor MOC 8-PIN Phototransistor L14G3 application moc opto triac 6N138 Spice Model DARLINGTON phototransistor l14f1 spice MOC3011 slotted optocouplers L14F1 PHOTOTRANSISTOR MOC3010 spice h11D1 spice H11F1 SPICE MODEL MOC3043-M spice model L14F1 phototransistor datasheet 4n35 optocoupler spice model TEXT
datasheet frame
Abstract: Wavelength (nm) p 0.040 (1.02) 1 3 Ø0.020 (0.51) 2X 0.040 (1.02) 45° 1N6265 1N6265 6.00 ­ , 1.00 6.00 30 100 Phototransistor QSD123 QSD123 5 0.5 880 AlGaAs 4.00 16.00 30 100 5 0.5 880 AlGaAs 6.00 ­ 30 100 Phototransistor 0.020 (0.51) SQ. (2X , 0.150 0.60 PIN2 CATHODE Output Wavelength p (nm) 30 Phototransistor 940 30 , 5 0.150 0.20 30 PIN2 CATHODE Output Wavelength p (nm) Phototransistor 940 ... Fairchild Semiconductor
Original
datasheet

42 pages,
1487.02 Kb

Phototransistor L14G2 QRD1114 L14F1 PHOTOTRANSISTOR PIN l14f1 photodiode phototransistor as sensor L14G3 216 h21A1 sensor H21A1 PINS H21A1 DATA SHEET drive circuit for L14G3 Phototransistor L14G3 CQX 89 opto transistor moc l14f1 phototransistor data MEXICO TRANSMISSIVE SENSOR Phototransistor L14F1 L14F1 PHOTOTRANSISTOR PIN CONFIGURATION OF L14F1 l14f1 ir phototransistor L14F1 phototransistor datasheet TEXT
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Abstract: (2.54) NOM Part Number QSC112 QSC112 QSC113 QSC113 QSC114 QSC114 QSC133 QSC133 VCE (V) 5 5 5 5 Test Conditions Ee p (nm , 0.155 (3.94) 0.018 (0.46) SQ. (2X) Sensor Type Phototransistor Phototransistor Phototransistor , (2.54) NOM Part Number QSD122 QSD122 QSD123 QSD123 QSD124 QSD124 Test Conditions Ee p VCE (V) (mW/cm2) (nm) 5 5 5 0.5 0.5 0.5 880 AlGaAs 880 AlGaAs 880 AlGaAs IC (ON) (mA) min max 1.00 4.00 6.00 6.00 16.00 ­ BVCEO ICEO @ 10 V VCE (V) (nA) max max 30 30 30 100 100 100 Sensor Type Phototransistor Phototransistor ... Fairchild Semiconductor
Original
datasheet

1 pages,
133.49 Kb

qsd122 phototransistor 600 nm phototransistor TEXT
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Abstract: #27;#30; !D monolithic 13 NPN phototransistor array Optical device consisting of a monolithic 13 silicon NPN phototransistor array chip with high gain uniformity for the output signals. The active area of each phototransistor is 0.2 x 0.45 mm2. The high optical responsivity is due to the antireflective coating deposited on the phototransistor active areas , EE GE IE ME OE N.C. NE LE HE FE DE BE CC Function Not connected Phototransistor A ... Optoi Microelectronics
Original
datasheet

2 pages,
206.39 Kb

TEXT
datasheet frame
Abstract: VEMT4700 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES · Package type: surface , NPN epitaxial planar phototransistor in a miniature PLCC-3 package for surface mounting on printed , 0.1 (nm) 450 to 1080 Note · Test conditions see table "Basic Characteristics" ORDERING , www.vishay.com 1 VEMT4700 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS , = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, = 950 nm, RL = 1 k VS = 5 V, IC = 1 mA, = ... Vishay Semiconductors
Original
datasheet

7 pages,
120.62 Kb

VEMT4700 TEXT
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Abstract: VEMT4700 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , phototransistor in a miniature PLCC-3 package for surface mounting on printed boards. The device is sensitive to , ) 0.1 (nm) 0.5 COMPONENT ± 60 450 to 1080 VEMT4700 VEMT4700 Note Test conditions see table , : detectortechsupport@vishay.com www.vishay.com 531 VEMT4700 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS , VCE = 20 V, E = 0 ICEO VCE = 5 V, f = 1 MHz, E = 0 CCEO Ee = 1 mW/cm2, = 950 nm, VCE = 5 ... Vishay Semiconductors
Original
datasheet

7 pages,
140.06 Kb

VSML3710 VEMT4700-GS08 J-STD-020D VEMT4700 TEXT
datasheet frame
Abstract: ° 0 400 600 800 0.4 0.6 1000 - Wavelength (nm) 94 8348 0.2 0 94 8248 , BPV11 BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , accordance RoHS 2002/95/EC 2002/95/EC and WEEE 2002/96/EC 2002/96/EC BPV11 BPV11 is a silicon NPN phototransistor with high radiant , PRODUCT SUMMARY Ica (mA) (deg) 0.1 (nm) 10 ± 15 450 to 1080 PACKAGING REMARKS , : detectortechsupport@vishay.com Document Number: 81504 Rev. 1.6, 05-Sep-08 BPV11 BPV11 Silicon NPN Phototransistor, RoHS ... Vishay Semiconductors
Original
datasheet

5 pages,
106.49 Kb

phototransistor 600 nm BPV11 TEXT
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Abstract: =5V IC=2mA Saturation Voltage nm 950 600 IE=2mA IB=203A 160 VCE=5V EE=1.0mW/cm2 1 , Optical receivers 2 AE Phototransistor A Emitter Optical encoders 3 CE Phototransistor C Emitter Controls/Drives 4 EE Phototransistor E Emitter General Purpose 5 GE Phototransistor G Emitter 6 IE Phototransistor I Emitter 7 N.C. Not connected 8 HE Phototransistor H Emitter 9 FE Phototransistor F Emitter 10 DE Phototransistor D Emitter 11 ... Optoi Microelectronics
Original
datasheet

2 pages,
133.66 Kb

OIT26 TEXT
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